BF493 Search Results

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor BF493S PNP Silicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector- Emitter Voltage VCEO -350 Vdc Collector-Base Voltage v CBO -350 Vdc Emitter-Base Voltage Ve b o -6.0

BF493S

Abstract: MPSA92 MPSA93
Contextual Info: ON Semiconductort BF493S High Voltage Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –350 Vdc Collector–Base Voltage VCBO –350 Vdc Emitter–Base Voltage VEBO –6.0 Vdc Collector Current — Continuous

CBF493S

Contextual Info: ON Semiconductort BF493S High Voltage Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −350 Vdc Collector −Base Voltage VCBO −350 Vdc Emitter −Base Voltage VEBO −6.0 Vdc Collector Current — Continuous

BF493S

Abstract: BF493SG MPSA92 MPSA93
Contextual Info: BF493S High Voltage Transistor PNP Silicon Features • This is a Pb−Free Device* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −350 Vdc Collector −Base Voltage VCBO −350 Vdc Emitter −Base Voltage

BF493

Abstract: BF491 BF492 motorola bf493 motorola
Contextual Info: BF491 thru BF493 MAXIMUM RATINGS Rating Symbol BF491 BF492 BF493 Unit C o llector-E m itter Voltage VCEO -2 0 0 - 250 -3 0 0 Collector-Base Voltage v CBO -200 -2 5 0 -3 0 0 Em itter-Base Voltage v EB0 - 6 .0 Vdc Vdc Vdc C ollector C urrent — Continuous 'c

Contextual Info: BF4935P Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)350è V(BR)CBO (V)350 I(C) Max. (A)500m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)200õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

bf493

Abstract: BF492 BF491 ferranti
Contextual Info: BF491 BF492 BF493 FERRANTI semkxmdüctots PNP Silicon Planar High V oltage Transistors DESCRIPTION These plastic encapsulated general purpose transistors are designed for applications requiring high breakdown voltage and low capacitance. The E-llne package is formed by injection moulding a SILICONE

BF493

Abstract: LB2T BF491 BF492 bp492
Contextual Info: BF491 2j3 PNP SILICON HIGH VOLTAGE TRANSISTORS BF491, BF492, BF493 are PNP silicon planar transistors designed for high voltage video amplifiers in television receivers requiring high breakdown voltage and low capacitance. EBC ABSOLUTE MAXIMUM RATINGS BF491

BF493S

Abstract: BF493SG MPSA92 MPSA93
Contextual Info: BF493S High Voltage Transistor PNP Silicon Features • Pb−Free Package is Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCEO −350 Vdc Collector −Base Voltage VCBO −350 Vdc Emitter −Base Voltage

BF493

Abstract: bf493 motorola
Contextual Info: M A XIM U M RATINGS Symbol BF492 BF493 Unit C o lle cto r-E m itte r Voltage Rating VCEO -2 5 0 -3 0 0 Vdc C ollector-Base Voltage VCBO -2 5 0 -3 0 0 Em itter-Base V o ltage v EBO -6 .0 Vdc Vdc C o lle ctor C u rrent — C o ntinuous •c -5 0 0 m A dc T o ta l Device D issipa tion Cg T a = 25°C

BF493

Abstract: BF492 BF491
Contextual Info: PNP SILICON HIGH VOLTAGE TRANSISTORS B F 4 9 1 , BF492, BF493 are PNP silicon planar transistors designed for high voltage video amplifiers in television receivers requiring high breakdown voltage and low capacitance. EBC ; ABSOLUTE MAXIMUM RATINGS BF491 BF492

Contextual Info: PLESSEY S E N I CO ND /D IS CR ET E 7220533 PLESSEY "t S dT | 7 5 H Q S 3 B G005GÛ5 1 95D 05085 SEM ICO ND/DI SCRETE 7 PNP silicon planar high voltage transistor ~ D 31-21 BF493SP FEATURES • 3 5 0 V V CE0 • Low leakage currents DESCRIPTION This transistor is designed specifically for use

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor BF493S PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 3 CASE 29–04, STYLE 1 TO–92 TO–226AA MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –350 Vdc Collector – Base Voltage

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA High V oltage Transistor BF493S P N P S ilicon COLLECTOR 3 1 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector-Emitter Voltage v CEO -350 Vdc Collector-Base Voltage v CBO -350 Vdc Emitter-Base Voltage v EBO -6.0

SE32

Contextual Info: PNP Silicon Planar High Voltage Transistor BF493SP FEATURES • • 3 5 0 V V CE0 Lo w leakage cu rre n ts DESCRIPTION T his tra n sisto r is designed s p e cifica lly fo r use in co lo u r te le visio n receiver and m o n ito r ap p lica tio n s requiring high bre a kd o w n voltage

BF492

Contextual Info: bGE ZETEX D • TÎ7GS7Û 0007504 ÖOS « Z E T B SEMI CONDUCTORS PIMP Silicon Planar High Voltage Transistors BF491 BF492 BF493 DESCRIPTION These plastic encapsulated, general purpose transistors are designed for applications requiring high breakdown voltage, low

BF493S

Abstract: MPSA92 MPSA93
Contextual Info: MOTOROLA Order this document by BF493S/D SEMICONDUCTOR TECHNICAL DATA High Voltage Transistor BF493S PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 1 2 MAXIMUM RATINGS Rating Symbol Value Unit Collector – Emitter Voltage VCEO –350 Vdc Collector – Base Voltage

BF493

Abstract: Ferranti Semiconductors BF492 BF491 ferranti
Contextual Info: BF491 BF492 BF493 FERRANTI semkxmdüctots PNP Silicon Planar High V oltage Transistors DESCRIPTION These plastic encapsulated general purpose transistors are designed for applications requiring high breakdown voltage and low capacitance. The E-llne package is formed by injection moulding a SILICONE

Contextual Info: bOE D • ^ ^ 7 0 57 6 DDD 7 2Q Û 450 « Z E T B ZETEX S E M I C O N D U C T O R S PNP Silicon Planar High Voltage Transistor BF493SP FEATURES • • 3 5 0 V V CE0 Low leakage currents DESCRIPTION This transistor is designed specifically for use in colour

Contextual Info: BF493S High Voltage Transistor PNP Silicon Features • This is a Pb−Free Device* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Symbol Value Unit Collector −Emitter Voltage VCEO −350 Vdc Collector −Base Voltage VCBO −350 Vdc Emitter −Base Voltage

Contextual Info: BF491j2 j3 PNP SILICON HIGH VOLTAGE TRANSISTORS B F 4 9 1 , BF492, BF493 are PNP silicon planar transistors designed for high voltage video amplifiers in television receivers requiring high breakdown voltage and low capacitance. EBC ABSOLUTE MAXIMUM RATINGS

TRANSISTOR bf493

Abstract: bf493 BF491 BF492
Contextual Info: BF491 THRU BF493 PNP SILICON PLANAR EPITAXIAL HIGH VOLTAGE VIDEO TRANSISTORS High Voltage Video Amplifier Darlington Transistor * Power Dissipation: PD=625mW TO-92 .210 5.33 .170(4.32) .205(5.20) .175(4.45) 3 2 1 .082(2.082) .50(12.7MIN.) .078(1.982) .022(0.55)

BF493S

Abstract: MPSA92 MPSA93
Contextual Info: ON Semiconductort BF493S High Voltage Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –350 Vdc Collector–Base Voltage VCBO –350 Vdc Emitter–Base Voltage VEBO –6.0 Vdc Collector Current — Continuous

Contextual Info: ON Semiconductort BF493S High Voltage Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector–Emitter Voltage VCEO –350 Vdc Collector–Base Voltage VCBO –350 Vdc Emitter–Base Voltage VEBO –6.0 Vdc Collector Current — Continuous