625MW Search Results

bc327 pnp

Contextual Info: BC327 PNP EPITAXIAL PLANAR TRANSISTOR POWER SEMICONDUCTOR Features • • • Suitable for AF Driver and Low Power Output Stage Applications Available in Sub-Groups Graded by DC Current Gain 625mW Power Dissipation E A B C Mechanical Data • • • •

TO-92 VCEO400V

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MPSA94 PNP SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR 1 FEATURES * Collector-Emitter voltage: VCEO=-400V * Collector Dissipation: PD MAX =625mW * Low collector-Emitter saturation voltage SOT-89 1 TO-92 *Pb-free plating product number: MPSA94L

2n3904 npn

Abstract: 2N3904 2N3906 transistor NPN 2N3904 UTC2N3904
Contextual Info: UTC 2N3904 NPN EPITAXIAL SILICON TRANSISTOR GENERAL PURPOSE APPLIATION FEATURES *Collector-Emitter Voltage: VCEO=40V *Collector Dissipation: Pc max =625mW *Complementary to 2N3906 1 TO-92 1:EMITTER 2:BASE 3:COLLECTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)

mmbt9013

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION „ FEATURES *High total Power Dissipation. 625mW *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to UTC MMBT9012

2N3906L

Abstract: 2N3906-G 2N3906L-T92-K
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N3906 PNP EPITAXIAL PLANAR TRANSISTOR GENERAL PURPOSE APPLIATION „ FEATURES * Collector-Emitter Voltage: VCEO=40V * Collector Dissipation: Pc MAX =625mW * Complementary to UTC 2N3904 1 TO-92 „ ORDERING INFORMATION Ordering Number

Contextual Info: UTC 2N5401 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE SWITCHING TRANSISTOR FEATURES *Collector-Emitter Voltage: VCEO=-150V *Collector Dissipation: Pc max =625mW *High current gain 1 APPLICATIONS *Telephone Switching Circuit *Amplifier TO-92 1:EMITTER 2:BASE

Contextual Info: UTC MPSA94 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR FEATURES *Collector-Emitter voltage: VCEO=-400V *Collector Dissipation: Pc max =625mW *Low collector-Emitter saturation voltage 1 APPLICATIONS *Telephone switching *High voltage switch TO-92

FMMT734

Abstract: smd transistor 5k
Contextual Info: Transistors SMD Type Power Darlington Transistor FMMT734 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Extremely low VCE sat at high current (1A) 0.55 Very high hFE at high current (5A) +0.1 1.3-0.1 +0.1 2.4-0.1 625mW Power Dissipation 0.4 3 2 +0.1

Contextual Info: Transistors IC ransistor SMD Type Product specification FMMT723 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 625mW power dissipation 0.4 3 Features 1 IC Up To 10A peak pulse current 0.55 IC CONT 2.5A 2 +0.1 0.95-0.1 +0.1 1.9-0.1 Excellent hfe Characteristics Up To 10A pulsed

Contextual Info: MCC TM Micro Commercial Components 2N3904 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • Lead Free Finish/RoHS Compliant "P" Suffix designates RoHS Compliant. See ordering information Capable of 625mW of Power Disspation and 200mA Ic

Contextual Info: Transistors SMD Type Product specification FMMT734 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 Features 1 Extremely low VCE sat at high current (1A) 0.55 Very high hFE at high current (5A) +0.1 1.3-0.1 +0.1 2.4-0.1 625mW Power Dissipation 0.4 3 2 +0.1 0.95-0.1

Contextual Info: ransistors SMD Type Product specification FMMT624 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 • Features 0.4 3 1 0.55 ● Power dissipation :PC=625mW +0.1 1.3-0.1 +0.1 2.4-0.1 ● Collector current:IC=1A 2 +0.1 0.95-0.1 +0.1 1.9-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

G2N4401

Abstract: G2N4403
Contextual Info: CORPORATION G2N4401 ISSUED DATE :2004/04/23 REVISED DATE :2004/11/29B NP N E PITAX I AL PLANAR T RANSI STOR Description The G2N4401 is designed for general purpose switching and amplifier applications. Features *Complementary to G2N4403 *High Power Dissipation: 625mW at 25

Contextual Info: 2N6516 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO=300V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: KSP8097 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: VCEO=25V • Collector Dissipation: PC max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

Contextual Info: KSP5172 NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO=25V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

KSP62

Abstract: KSP63 KSP64
Contextual Info: KSP62/63/64 KSP62/63/64 Darlington Transistor • Collector-Emitter Voltage: VCES=KSP62: 20V KSP63/64: 30V • Collector Power Dissipation: PC max =625mW TO-92 1 1. Emitter 2. Base 3. Collector PNP Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

2N6515

Abstract: 2N6516 2N6517 2N6518
Contextual Info: 2N6515 2N6515 High Voltage Transistor • Collector-Emitter Voltage: VCEO= 250V • Collector Dissipation: PC max =625mW • Complement to 2N6518 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

2n3904 npn fairchild

Abstract: 2N3904 KSP6520 KSP6521
Contextual Info: KSP6520/6521 KSP6520/6521 Amplifier Transistor • Collector-Emitter Voltage: VCEO=25V • Collector Power Dissipation: PC max =625mW • Refer to 2N3904 for graphs TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

c 458 c transistor

Abstract: KSP12 transistor c 458
Contextual Info: KSP12 KSP12 Darlington Transistor • Collector-Emitter Voltage: VCES=20V • Collector Power Dissipation: PC max =625mW TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

SS9012

Abstract: SS9013
Contextual Info: SS9012 SS9012 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipation. PT=625mW High Collector Current. (IC= -500mA) Complementary to SS9013 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector

KSP05

Abstract: KSP06
Contextual Info: KSP05/06 KSP05/06 Amplifier Transistor • Collector-Emitter Voltage: VCEO = KSP05: 60V KSP06: 80V • Collector Dissipation: PC max =625mW • Complement to KSP55/56 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

transistor cs 9012

Contextual Info: NPN EPITAXIAL SILICON TRANSISTOR SS9013 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION. • • • • T O -92 High total pow er dissipation. PT=625mW High C ollector Current. (lc=500m A) C om plem entary to S S 9012 Excellent hpE linearity.

Contextual Info: SS9013 SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipation. PT=625mW High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector