2N6518 Search Results

2N6515

Abstract: 2N6516 2N6517 2N6518
Contextual Info: 2N6515 2N6515 High Voltage Transistor • Collector-Emitter Voltage: VCEO= 250V • Collector Dissipation: PC max =625mW • Complement to 2N6518 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: 2N6515 2N6515 High Voltage Transistor • Collector-Emitter Voltage: VCEO= 250V • Collector Dissipation: PC max =625mW • Complement to 2N6518 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: 2N6518 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 2 5 “ C

2N65T

Abstract: 2N6515 CEB npn 10PA 20MHZ 2N6516 2N6517 2N6518 2N6519 2N6520
Contextual Info: 2N6515 2N6516 2N6517 NPN 2N6518 2N6519 2N6520 PNP ♦I COMPLEMENTARY S IL IC O N HIGH VOLTAGE TRANSISTORS JED EC TO-92 CASE D ESC RIPTIO N The CENTRAL SEMICONDUCTOR 2N6515 N P N , p le m e n ta ry s i l i c o n t r a n s i s t o r s d e s ig n e d MAXIMUM RATINGS

2N6518

Abstract: 2N6520 2N65
Contextual Info: Transistors 2N6518 USHA INDIA LTD HIGH VOLTAGE TRANSISTOR ABSOLUTE MAXIMUM RATINGS (Ta=25°C ) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 2 5 °C

CEB npn

Abstract: 2n6518
Contextual Info: 2N6515 2N6516 2N6517 2N6518 2N6519 2N6520 NPN PNP COMPLEMENTARY SILICON HIGH VOLTAGE TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6515, 2N6518 series types are complementary silicon transistors designed for high voltage driver and amplifier

2N6515

Abstract: 2N6518 2N6520
Contextual Info: 2N6518 2N6518 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -250V • Collector Dissipation: PC max =625mW • Complement to 2N6515 TO-92 1 PNP Epitaxial Silicon Transistor 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted

2N6518

Abstract: 2N6520
Contextual Info: SAMSUNG SEMI C ONDUCTOR INC 2N6518 14E D | 7^4142 00071^3 S | PNP EPITAXIAL SILICON TRANSISTOR T-29-21 HIGH VOLTAGE TRANSISTOR T O -9 2 ABSOLUTE MAXIMUM RATINGS Ta=25°C f ; Characteristic Symbol Rating Unit -2 5 0 -2 5 0 -5 -5 0 0 -2 5 0 0 .6 25 5 150 —5 5 ~ 1 50

Contextual Info: 2N6518 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS TA=25°°C Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation Derate above 25°C

Contextual Info: 2N6518 PNP EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 ABSOLUTE MAXIMUM RATINGS TA=25t: C haracteristic Collector-Base Voltage Collector-Em ttter Voltage Emitter-Base Voltage Collector Currant Base Current Collector Dissipation Derate above 251

Contextual Info: Small Signal High Voltage Transistors Part No. 2N5550 2N5551 MPSA43 2N6515 2N6516 MPSA42 2N6517 MPSA45 MPSA44 2N5400 2N5401 MPSA93 2N6518 2N6519 MPSA92 2N6520 2N3440 20070515 Polarity NPN PNP NPN VCEO hFE @ VCE & IC IC Min. Max. V (A) 140 160 200 250 300

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR 2N6518 HIGH VOLTAG E TRANSISTOR TO -92 A BSO LU TE M AXIMUM RATINGS TA=25°C C haracteristic Col lector-Base Voltage C ollector-E m ltter Voltage Em itter-Base Voltage C ollector C urrent Base C urrent C ollector Dissipation

Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR 2N6518 HIGH VOLTAGE TRANSISTOR T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic C ollector-B ase Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollecto r C urrent Base C urrent C ollecto r D issipation

Contextual Info: 2N6515 2N6515 High Voltage Transistor • Collector-Emitter Voltage: VCEO= 250V • Collector Dissipation: PC max =625mW • Complement to 2N6518 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

transistor c 458

Abstract: 2n6518
Contextual Info: 2N6518 2N6518 High Voltage Transistor • Collector-Emitter Voltage: VCEO= -250V • Collector Dissipation: PC max =625mW • Complement to 2N6515 TO-92 1 PNP Epitaxial Silicon Transistor 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings Ta=25°C unless otherwise noted

2N6518

Abstract: 2N6520
Contextual Info: PNP EPITAXIAL SILICON TRANSISTOR 2N6518 HIGH VOLTAGE TRANSISTOR T O -92 ABSOLUTE MAXIMUM RATINGS TA=25°C C haracteristic Sym bol C ollector-Base Voltage C ollector-E m itter Voltage Em itter-Base Voltage C ollector Current Base C urrent C ollector D issipation

2N6515

Abstract: 2N6516 2N6517 2N6518
Contextual Info: 2N6515 2N6515 High Voltage Transistor • Collector-Emitter Voltage: VCEO= 250V • Collector Dissipation: PC max =625mW • Complement to 2N6518 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

2N5963

Abstract: 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830
Contextual Info: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. DESCRIPTION LEAD VCBO VCEO CODE (V) (V) *VCES VEBO ICBO @ VCB (nA) (V) *ICES (V) *ICEV hFE *hFE (1kHZ) TO-92-18R @ VCE @ IC VCE (SAT) @ IC Cob (V) (mA) (V) (mA) fT NF toff (pF) (MHz) (dB) *Crb *TYP

BF963

Abstract: 1N4004 SOD-123 BC547 smd BB409 2n2907 smd BAT16-046 1N4148 2N2907 SOT-23 1N4148 SOD-123 2n2222 smd
Contextual Info: Cross Reference Leaded Devices SMD-Packages SOD-123 1N4001 1N4002 1N4003 1N4004 1N4001 2x 1N4002 (2x) 1N4003 (2x) 1N4004 (2x) 1N4148 1N4148 (2x) SOD-323 SCD-80 SOT-23 SOT-323 SOT-343 SOT-363 SCT-595 BAW 78 M BAS 16-02W BAS 16-03W BAS16 BAL/BAR74 BAL/BAR99

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

IC cbe

Abstract: 2N6426 MPS3708
Contextual Info: Sm all Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LEAD CODE h FE v CBO v CEO v EBO •CBO 8 v CBO (V) (V) (V) m •TO-92-18R MIN *VCES MIN MIN v CE (V) (V) TO-92-18R O lC VCE(S;W )® 'c <mA) (V) (mA) *hfe(1kHZ) *r c ob NF ‘ oft (PF)

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

transistor 13003 AD

Abstract: ksd-180 HF 13003 KSD180 13003 HF KSD168 KSD966 ksd-168 PNP NPN Transistor VCEO 120V 100V Ic 7A KSC 1.5k 250v
Contextual Info: TRANSISTORS FUNCTION GUIDE 1. SMALL SIGNAL TRANSISTORS 1.1 General Purpose Transistors 1.1.1 SOT-23 Type Transistors Device and Polarity Marking Condition V ceo lc Vce h FE Condition (c le Vce(sat},VBE(sat)(v) Condition fiÌMHz) (V) (A) (V) !c (mA) (mA)

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™