MPS3706 Search Results

ZTX3705

Abstract: 945 MOTHERBOARD CIRCUIT diagram MPS3693 ZTX108 BCY59P MPS3704 MPS3705 MPS6532 VC30 ZTX238
Contextual Info: NPN GENERAL PURPOSE TABLE 1 - continued Type MPS3704\ ZTX3704 J MPS3705 \ ZTX3705 / MPS6532 ZTX303 BCY59P MPS3693 ZTX238 ZTX383 ZTX384 BC183P ZTX108 2N4123 MPS3706\ ZTX3706 / ZTX302 ZTX301 BCY58P BC548P MPS3709\ ZTX3709 / MPS3710\ ZTX3710 / MPS3711 \ ZTX3711 f

Contextual Info: MPS3706 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)40 I(C) Max. (A)600m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

MPS3704

Abstract: MPS3706 MPS3705
Contextual Info: MPS3704 MPS3705 MPS3706 philips international 5bE D 711065b 0042406 4Ô4 • SILICON PLANAR EPITAXIAL TRANSISTORS PHIN T -Z 7 -Z / NPN silicon planar epitaxial transistors, each in a plastic TO-92 envelope. They are intended for use in amplifier applications.

Contextual Info: S AM SU N G SEMICONDUCTOR INC MPS3706 IME D | 7^4142 00G7317 1 | NPN EPITAXIAL SILICON TRANSISTOR T -2 9 -2 1 GENERAL PURPOSE TRANSISTOR • Collector-Em ltter Voltage: Veto= 20V • C ollector Dissipation:'Pc max =625mW TO-92 ABSOLUTE MAXIMUM R ATING S (Ta=25°C)

MPS3704

Abstract: MPS3706 MPS3705
Contextual Info: • MPS3704 MPS3705 MPS3706 1^53^31 □ Ü 2 7 clc l 53T « A P X N ANER PHILIPS/DISCRETE bTE ]> SILICON PLANAR EPITAXIAL TRANSISTORS NPN silicon planar epitaxial transistors, each in a plastic TO-92 envelope. They are intended fo r use in am plifier applications.

MPS44

Abstract: MPS4058 MPS3901
Contextual Info: DEVICE TYPE PACKAGE BVCEO BVCBO BVE80 ICBO @ VCB IV M IN VJ M IN ( V I M IN Im A I .M A X (V | HFE @ VC & 1C M IN -M A X (V I COB 1 - iA I MPS3702 MPS3703 MPS3704 MPS3705 MPS3706 PNP PNP NPN NPN NPN TO-92 TO -92 TO -92 TO -92 TO -92 (72) (72) (72) (72)

MPS3704

Abstract: transistor mps3704 2N3706 MPS3705 MPS3706 0482 transistor 2N3705 2N3704 transistors mps3704 2N3704 circuit
Contextual Info: MPS3704 Silicon MPS3705 MPS3706 NPN SILICON ANNULAR TRANSISTORS NPN SILICON AMPLIFIER TRANSISTOR . designed f o r use in lo w -c u rre n t, large-signal a m p lifie r a p p lic a tio n s . • Devices S im ila r E le c tric a lly to 2 N 3 7 0 4 , 2 N 3 7 0 5 , 2 N 3 7 0 6

mps 06

Abstract: GES6220 MPS3702 MPS3703 MPS3704 MPS3705 MPS3706 MPS6512 MPS6514 MPS6516
Contextual Info: SILICON SIGNAL TRANSISTORS COMPLEMENTARY PAIRS TO-92 PACKAGE DEVICE NPN V Ml N.-MAX. MPSA55 MPS A 56 MPS3702 MPS3703 60 80 60 80 25 30 30 30 20 30 30 25 25 40 40 40 25 40 40 30 40 40 30 25 25 60 60 80 80 40 40 25 25 MPS A05 MPSA06 MPS3704 MPS3705 MPS3706

MPS3704

Contextual Info: • bb53T31 QD27T11 53^ MPS3704 MPS3705 MPS3706 APX bTE D N ANER PHILIPS/DISCRETE J V SILICON PLANAR EPITAXIAL TRANSISTORS NPN silicon planar epitaxial transistors, each in a plastic TO-92 envelope. They are intended fo r use in amplifier applications. QUICK REFERENCE DATA

945 MOTHERBOARD CIRCUIT diagram

Abstract: ZTX108 ZTX3708 BCY59P MPS3693 MPS3704 MPS3705 MPS6532 VC30 ZTX238
Contextual Info: NPN GENERAL PURPOSE TA B L E 1 - continued Type MPS3704\ ZTX3704 J MPS3705 \ ZTX3705 / MPS6532 ZTX303 BCY59P MPS3693 ZTX238 ZTX383 ZTX384 BC183P ZTX108 2N4123 MPS3706\ ZTX3706 / ZTX302 ZTX301 BCY58P BC548P MPS3709\ ZTX3709 / MPS3710\ ZTX3710 / MPS3711 \ ZTX3711 f

transistor D 587

Abstract: 2N4400 MPS3706
Contextual Info: SAMS UN G SEMICONDUCTOR INC MPS3706 14E D 1 7 ^ 4 1 4 0 0007317 | NPN EPITAXIAL SILICON TRANSISTOR T -2 9 -2 1 GENERAL PURPOSE TRANSISTOR • Collector-Emltter Voltage: Veto= 20V • Collector Dissipation:'Pc max =625mW TO-92 ABSOLUTE MAXIMUM RATINGS (Ta-25°C )

2N1370

Abstract: 2N3702 mps702 MPS3704 PNP 2n series 702 pnp 2N13706 IC10F mps3702
Contextual Info: 2 N 3702 \¡/rough 2 N 3706 MPS 3702 through MPS3706 PNP . NPN SILICON GENERAL PURPOSE AP TRANSISTORS I CASE T0-92B THE ABOVE TYPES ARE SILICON PLANAR EPITAXIAL TRANSISTORS FOR GENERAL PURPOSE AP MEDIUM POWER APPLICATIONS. THE 2N3702 SERIES ARE SUPPLIED IN

transistor mps3704

Abstract: MPS3704 MPS3706 IC600 MPS3705
Contextual Info: nataSheet MPS3704 MPS3705 MPS3706 Central Sem iconductor Corp. SILICON NPN TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 JEDEC T0-92 CASE (EBC) Manufacturers of World Class Discrete Semiconductors DESCRIPTION

n3906

Abstract: transistor ZTX302 MPS3693 945 MOTHERBOARD CIRCUIT diagram MPS3710 ZTX108 BCY59P MPS3704 MPS3705 MPS6532
Contextual Info: NPN GENERAL PURPOSE TABLE 1 - continued Type MPS3704\ ZTX3704 J MPS3705 \ ZTX3705 / MPS6532 ZTX303 BCY59P MPS3693 ZTX238 ZTX383 ZTX384 BC183P ZTX108 2N4123 MPS3706\ ZTX3706 / ZTX302 ZTX301 BCY58P BC548P MPS3709\ ZTX3709 / MPS3710\ ZTX3710 / MPS3711 \ ZTX3711 f

MPS3709

Abstract: MPS3563 MPS3646 MPS3693 MPS3704 MPS3705 MPS3706 MPS3707 MPS3708 MPS3710
Contextual Info: TO-92 Plastic Package Transistors NPN Maximum Ratings Type No. ^CBO (V) Min V CEO V ESO (V) Min (V) Min Electrical Characteristics (Ta=25°C, U nless Otherwise Specified) PD *c (W) (A) @Tc=25°c 'cBO ^CB (mA) 0 (V ) Max MPS3563 30 12 2 0.625 0.05 0.05 MPS3646

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3

2N4123 pnp silicon

Abstract: 2N4401 520 GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50

2N5963

Abstract: 2N5812 2N5813 2N5816 2N5817 2N5818 2N5819 2N5822 2N5823 2N5830
Contextual Info: Small Signal Transistors TO-92 Case Continued TO-92 TYPE NO. DESCRIPTION LEAD VCBO VCEO CODE (V) (V) *VCES VEBO ICBO @ VCB (nA) (V) *ICES (V) *ICEV hFE *hFE (1kHZ) TO-92-18R @ VCE @ IC VCE (SAT) @ IC Cob (V) (mA) (V) (mA) fT NF toff (pF) (MHz) (dB) *Crb *TYP

TO92A

Abstract: TO-92a MPS4355 MPS6591 MPSD05 MPS9647 MPS9468 MPS3702 MPS3703 MPS3705
Contextual Info: T Y PE NO. P O L A R IT Y Medium Power Amplifiers and Switches M A X IM U M R A T IN G S CASE P d ImtVI •c A H FE V C E (S A T ) V CEO (V ) min m ax 'c (m A) V CE (V) max f T min Cob COM PLE­ max M ENTARY (MHz) (pF) TYPE 0.05 0.05 0.1 0.1 0.1 100 100

Contextual Info: N AMER P H I L I P S / D I S C R E T E D BSE • T~-2’7~0I bl3S3T31 D O l b n a S ■ Small Signal Devices GENERAL PURPOSE AND SWITCHING TRANSISTORS - NPN TYPES TYPE PKG . bvc eo - te . • ^ /- : *T r >c - i _-iiiln : 2N1613 2N1711 2N1893 2N2218 2N2219

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

IC cbe

Abstract: 2N6426 MPS3708
Contextual Info: Sm all Signal Transistors TO-92 Case Continued TO-92 TYPE NO. FAMILY LEAD CODE h FE v CBO v CEO v EBO •CBO 8 v CBO (V) (V) (V) m •TO-92-18R MIN *VCES MIN MIN v CE (V) (V) TO-92-18R O lC VCE(S;W )® 'c <mA) (V) (mA) *hfe(1kHZ) *r c ob NF ‘ oft (PF)

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

100ria

Abstract: 25V6K RN5305 2N4494
Contextual Info: H T ransisto rs •Transistors • NPN Transistors TO-92 General Purpose Small Signal Amplifiers Type 2N3707 MPS3707 2N3708 MPS3708 2N3709 MPS3709 2N3701 MPS3710 2N3711 MPS3711 2N3900A 2N4409 2N4494 2N4495 2N5088 Package BV. „ (Fig. 1) Mm TO-92 (ECB) 30V