MPSA12 Search Results

Darlington transistor to 92

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MPSA12 Features • This device is designed for applications requiring extremely high current gain at current to 1.0A

2N4123 pnp silicon

Abstract: 2N4401 520 GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50

b20100

Abstract: MPSA12
Contextual Info: S E M IC O N D U C T O R MPSA12 NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol

Contextual Info: ¿¿F” MPSA12 1 The M PSA12 i s d e s ig n e d r e q u ir in g fo r NPN s i l i c o n p r e a m p lifie r in p u t im p e d an ce d a r lin g t o n in p u t of NPN S IL IC O N DARLINGTON TRAN SISTO R TO-92 tr a n s is to r a p p lic a tio n s s e v e r a l megohms.

MPSA13

Abstract: MPSA12 MPSA14 mpsa13 central
Contextual Info: Datasheet J • TM P a h 1 W C EITFO 1 Semiconductor Corp. MPSA12 MPSA13 MPSA14 NPN SILICON DARLINGTON TRANSISTOR JEDEC T0-92 CASE EBC 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 Manufacturers of World Class Discrete Semiconductors

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MPSA12 Features • This device is designed for applications requiring extremely high current gain at current to 1.0A Pin Configuration Bottom View

Contextual Info: Not Recommended for New Design Please Use FMMTA14 NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR MPSA12 ISSUE 2 – SEPT 93 FEATURES * 1 Watt power dissipation * 1 Amp continuous current * Minimum gain =8K at 250mA C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS.

MPSA12

Contextual Info: MPSA12 MPSA12 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * TA=25°C unless otherwise noted

FPQ3725

Abstract: 2n999 FPQ3724 FPQ-3724
Contextual Info: TRANSISTORS— MULTIPLE TRANSISTORS NPN DARLINGTON AMPLIFIER TRANSISTORS NUMERIC LISTING METAL AND PLASTIC PACKAGE V CEO VOLTS TYPE MHz ^ob pF MIN MAX h FE hFE MIN - MAX MIN @ •c mA PD V 2 5 "c mW Package 310 TO-92 MPSA12 20 20000 @ 10 MPSA13 30 5000 @

mpsa65

Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P AC KAG E VCE sat 1F E b v ceo Device Type @ 10mA-(V) Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30

n3904

Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
Contextual Info: SILICON SIGNAL TRANSISTORS G EN ERAL PURPOSE A M PLIFIERS TO-92 PACKAGE Device bvceo Type @ 10mA- V Min. Max. @ lc (mA) G ES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50

GES5819

Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device bv ceo Type @ 10mA- V Min. VCE(sat) 1F E Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30

GES5819

Abstract: GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20 MPSA55
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE b v ceo Device Type @ 10mA- V Min. Max. @ lc (mA) G ES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50

Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR MPSA12 ISSUE 2 - SEPT 93_ FEATU RES * 1 Watt power dissipation * 1 Am p continuous current * Minimum gain =8K at 250mA ABSOLUTE MAXIMUM RATINGS. PARAMETER SYM BOL VALUE UNIT

Contextual Info: Discrete POWER & Signal Technologies F = A l R O H I L .D SEM ICONDUCTOR MPSA12 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics.

Contextual Info: Small Signal Darlington Transistors Part No. 2N5306 2N5307 2N5308 MPSA12 MPSA13 MPSA14 2N6427 MPSA62 MPSA63 MPSA64 MPSA65 20070515 Polarity NPN PNP VCEO hFE @ VCE & IC IC V (A) 20 30 30 40 20 30 30 30 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Min. Max. 7K 2K 7K 20K 20K

NPN Transistor TO92

Abstract: npn darlington TO92 MPSA12P CTO-92
Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR MPSA12P ISSUE 2 – NOV 93 E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Emitter Voltage V CES VALUE UNIT 20 V Emitter-Base Voltage V EBO 10 V Continuous Collector Current IC 500 mA Power Dissipation at T amb=25°C

MPSA12

Abstract: equivalent mpsa14 MPSA14
Contextual Info: MPSA12 MPSA12 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * TA=25°C unless otherwise noted

Contextual Info: MPSA12 Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 20 Vdc Emitter Base Voltage VEBO 10 Vdc PD 625 5.0 mW mW/°C TJ, Tstg

MPS6531

Abstract: GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 MPSA20
Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Type @ 10mA- V Min. Max. @ lc (mA) GES5819 GES5820 GES5821 MPSA05 MPSA06 MPSA12 MPSA13 MPSA14 PNP NPN PNP NPN NPN NPN NPN NPN 40 60 60 60 80 20 30 30 150 60 60 50 50 20,000 10,000

MPSA12

Abstract: MPSA14
Contextual Info: MPSA12 MPSA12 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Base 3. Collector Absolute Maximum Ratings * TA=25°C unless otherwise noted

MP5A12

Abstract: MPSA12
Contextual Info: S; t r .; • v"; '" ÿ-!:"; Ü ' v " i'” S' -vá-'.'." MPSA12 » ~ í ,.* f , . 4 i f i 0j% lE C NPN S IL IC O N V The M PSA12 i s d e s ig n e d r e q u ir in g fo r NPN s i l i c o n p r e a m p lif ie r in p u t im p e d a n ce l i d a r lin g t o n

mps a12

Abstract: mpsa12
Contextual Info: MPSA12 Darlington Transistors NPN Silicon MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 20 Vdc Emitter Base Voltage VEBO 10 Vdc PD 625 5.0 mW mW/°C TJ, Tstg −55 to +150 °C Characteristic Symbol Max Unit Thermal Resistance, Junction−to−Ambient

MPSA12

Abstract: MPSA12RLRA MPSA12RLRP MPSA12RLRPG mps a12 Marking code mps
Contextual Info: MPSA12 Darlington Transistors NPN Silicon Features • Pb−Free Packages are Available* http://onsemi.com COLLECTOR 3 MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage VCES 20 Vdc Emitter Base Voltage VEBO 10 Vdc PD 625 5.0 mW mW/°C TJ, Tstg