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    2N5306 Search Results

    2N5306 Datasheets (41)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N5306
    Fairchild Semiconductor NPN Darlington Transistor Original PDF 55.82KB 4
    2N5306
    Fairchild Semiconductor NPN Darlington Transistor Original PDF 23.59KB 2
    2N5306
    Allegro MicroSystems General Purpose Bipolar Transistor, NPN, 25 MinV, TO-92, 3-Pin Scan PDF 379.81KB 5
    2N5306
    Central Semiconductor Darlington Bipolar Transistor, NPN, 25V, TO-92, 3-Pin Scan PDF 98.01KB 2
    2N5306
    Central Semiconductor SMALL SIGNAL DARLINGTON TRANSISTORS (EPOXY) Scan PDF 383.03KB 4
    2N5306
    Fairchild Semiconductor NPN Darlington Transistor Scan PDF 44.19KB 2
    2N5306
    General Electric Semiconductor Data Handbook 1977 Scan PDF 797.84KB 6
    2N5306
    General Electric Semiconductor Data Book 1971 Scan PDF 1.15MB 3
    2N5306
    General Electric Planar epitaxial passivated NPN silicon Darlington transistor. 25V, 300mA. Scan PDF 129.81KB 4
    2N5306
    Micro Electronics Semiconductor Device Data Book Scan PDF 53.98KB 1
    2N5306
    Micro Electronics Semiconductor Devices Scan PDF 50.38KB 1
    2N5306
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 34.79KB 1
    2N5306
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 115.58KB 1
    2N5306
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 91.75KB 1
    2N5306
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 99.79KB 1
    2N5306
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 56.44KB 1
    2N5306
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 86.67KB 1
    2N5306
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 49.56KB 1
    2N5306
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 161.64KB 1
    2N5306
    National Semiconductor NPN Transistors / DARLINGTON Scan PDF 146.06KB 4
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    2N5306 Price and Stock

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    Central Semiconductor Corp 2N5306

    - Boxed Product (Development Kits) (Alt: 2N5306)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2N5306 Box 6 Weeks 2,500
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    onsemi 2N5306

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    Avnet Americas 2N5306 Bulk 6,000
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    Central Semiconductor Corp 2N5306 APM PBFREE

    - Ammo Pack (Alt: 2N5306 APM PBFREE)
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    Avnet Americas 2N5306 APM PBFREE Ammo Pack 4,000
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    Central Semiconductor Corp 2N5306 APM TIN/LEAD

    - Ammo Pack (Alt: 2N5306 APM TIN/LEAD)
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    Avnet Americas 2N5306 APM TIN/LEAD Ammo Pack 4,000
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    Central Semiconductor Corp 2N5306 PBFREE

    - Boxed Product (Development Kits) (Alt: 2N5306 PBFREE)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 2N5306 PBFREE Box 5,000
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    2N5306 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N5306

    Abstract: F63TNR MPSA14 PN2222N CBVK741B019
    Contextual Info: 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original
    2n5306mpsa14f63tnrpn2222n+1cbvk741b019 PDF

    D38S1-4

    Abstract: 2N3901 D38S7 GES93 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A
    Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,


    OCR Scan
    2n3391a2n38442n3844a2n3845+82n3845a2n3900a25g-b00100ma2n3901d38s1-4d38s7ges93 PDF

    D40C2

    Contextual Info: CENTRAL SEMICONDUCTOR fc,l D | nfl'HbB 4 1~3 T"29“29 SMALL SIGNAL DARLINGTON TRANSISTORS EPOXY lc ^ ^ O O m A TYPE NO. OPERATING AND STORAGE TEMPERATURE -6 5 °to + 1 5 0 °C Jc VCEO Amps Volts 2N5305 0.3 25 2N5306 0.3 2N 5306A Pd (Max) hFE @ 1C TA=25°C


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    2n53052n53062n53072n5308+7ges5305s5306ges5306ages5307ges5308ges5308ad40c2 PDF

    2N5306 NATIONAL SEMICONDUCTOR

    Abstract: NSDU45 darlington transistor MPSw45 D40C2 D40K1 NSDU45A
    Contextual Info: This NPN Transistors v EBO V Min Ic e s ' 'CBO a (jiA) Max Its Case Style 2N5305 TO-92 (94) 0.1 2N5306 TO-92 (94) 2N5307 *c @ VCE (mA) (V) VCE(SAT) VBE(SAT) . (V) & (V) 0 C Max Min Max ( ) fT (MHz) C0b (pF) Max Min @ lc (mA) Process No. 25 2000 20,000 2


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    d0370b02n5306 national semiconductornsdu45darlington transistor mpsw45+3d40c2d40k1nsdu45a PDF

    2N5306

    Abstract: MPSA14
    Contextual Info: S S E f v l l G O f s l O L J C î T Q R ;:m 2N5306 NPN Darlington Transistor This device is designed for applications requiring extrem ely high cu rre n t gain at currents to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. Absolute Màximum RStinQS


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    2n5306mpsa14 PDF

    Contextual Info: Small Signal Darlington Transistors Part No. 2N5306 2N5307 2N5308 MPSA12 MPSA13 MPSA14 2N6427 MPSA62 MPSA63 MPSA64 MPSA65 20070515 Polarity NPN PNP VCEO hFE @ VCE & IC IC V (A) 20 30 30 40 20 30 30 30 0.5 0.5 0.5 0.5 0.5 0.5 0.5 Min. Max. 7K 2K 7K 20K 20K


    Original
    2n53062n53072n5308mpsa12+6mpsa13mpsa142n6427mpsa62mpsa63mpsa64 PDF

    2N5306 equivalent

    Abstract: 2N5306 MPSA14
    Contextual Info: 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original
    2n5306mpsa142n5306 equivalent PDF

    Contextual Info: 2N5306 2N5306 NPN Darlington Transistor • This device is designed for applications requiring extremely high current gain at currents to 1.0A. • Sourced from process 05. • See MPSA14 for characteristics. TO-92 1 1. Emitter 2. Collector 3. Base Absolute Maximum Ratings * TA=25°C unless otherwise noted


    Original
    2n5306mpsa14 PDF

    quan-tech

    Abstract: D39C4 2N3901 GES6220 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A
    Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,


    OCR Scan
    2n3391a2n38442n3844a2n3845+92n3845a2n3900a25g-b00100ma2n39012n5307quan-techd39c4ges6220 PDF

    2N5306

    Abstract: 2N5306 FAIRCHILD SEMICONDUCTOR
    Contextual Info: SEMICONDUCTOR ¡m 2N5306 NPN Darlington Transistor T his device is designed for applications requiring extrem ely high cu rre n t gain at cu rre n ts to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted


    OCR Scan
    2n5306psa142n5306 fairchild semiconductor PDF

    2n5306

    Contextual Info: SEMICONDUCTOR • 2N5306 . TO-92 NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum RatinQS TA = 25°C unless otherwise noted


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    2n5306mpsa14 PDF

    2n5306

    Contextual Info: 2N5306 Spec Sheets Details Diodes, Transistors, Thyristors, Triacs, Dio. 1 of 2 HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| Home 2N5306 Availability Online Store


    Original
    2n5306stv3208lm3909n PDF

    D38S5

    Abstract: hitachi 16 X 2 lcd 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A 2N3901 2N5232A
    Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 P A C K A G E Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA,


    OCR Scan
    2n3391a2n38442n3844a2n3845+92n3845a2n3900a25g-b00100ma2n3901d38s3d38s5hitachi 16 x 2 lcd2n5232a PDF

    MPSA14 MPSA64

    Abstract: GES5307 MPS-A13 pnp Central D40C1 2N5306 D40C2 2N53 2N5305 2N5306A 2N5307
    Contextual Info: CENTRAL SEMICONDUCTOR fc,l D | nfl'HbB 4 1~3 T"29“29 SMALL SIGNAL DARLINGTON TRANSISTORS EPOXY lc ^ ^ O O m A TYPE NO. OPERATING AND STORAGE TEMPERATURE - 6 5 ° t o + 1 5 0 ° C Jc VCEO Amps Volts 2N5305 0.3 25 2N5306 0.3 2N 5306A Pd (Max) hFE @ 1C TA=25°C


    OCR Scan
    2n53052n53062n5306a2n5307+122n5308ages5305s5306ges5306ato-1260000s23mpsa14 mpsa64ges5307mps-a13 pnpcentral d40c1d40c22n53 PDF

    D39C4

    Abstract: ei50 2n5306 GES6220 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A
    Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,


    OCR Scan
    2n3391a2n38442n3844a2n3845+102n3845a2n3900a25g-b00100ma2n3901100hzd39c4ei502n5306ges6220 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b PDF

    2N5309

    Abstract: 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306
    Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (S A T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN


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    2n42562n44242n4425130-b40+92im51722n51742n52322n5232a2n5249a012ysc2n53092n53052n5306 PDF

    2N4256

    Abstract: 2N4424 2N4425 2N5174 2N5232 2N5232A 2N5249A 2N5305 2N5306 "to-98" package
    Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10m A V h FE M in.-M ax. @ IC, V C E (V> (V) Max. T ypical (MHz) Cc b @ 10V 1 MHz T ypical (Pf) @ 25° C (mW) fT V C E (S A T) l c . *B PT 2N 4256 2N 4424 2N4425 NPN


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    2n42562n44242n4425130-b40+92im51722n51742n52322n5232a2n5249a2n53652n53052n5306to-98" package PDF

    NPN Transistor TO92 5V 200mA

    Abstract: 2N3877A GES5307 GES6220 D38L1-3 GES5305 GES5306 GES5306A GES5308 GES5308A
    Contextual Info: SILICON SIGNAL DARLINGTON TRANSISTORS TO-92 PACKAGE Device Type bv ceo V Min.-Max. GES5305 GES5306 GES5306A GES5307 GES5308 GES5308A D38L1-3 D39C1-3 D39C4-6 NPN NPN NPN NPN NPN NPN NPN PNP PNP 25 25 25 40 40 40 40 40 25 2K-20K /K-70K 7K-70K. 2K-20K 7K-70K


    OCR Scan
    ges53052k-20k200mages5306+10/k-70kges5306a7k-70knpn transistor to92 5v 200ma2n3877ages5307ges6220d38l1-3ges5308ges5308a PDF

    D39C4

    Abstract: 2N5174-2N5176 2N5175 GES6220 D38L1-3 GES5305 GES5306 GES5306A GES5307 GES5308
    Contextual Info: SILICON SIG N A L D AR L I N G T O N TR ANS IS TO RS TO-92 PACKAGE Device Type bv ceo V Min.-Max. GES5305 GES5306 GES5306A GES5307 GES5308 GES5308A D38L1-3 D39C1-3 D39C4-6 NPN NPN NPN NPN NPN NPN NPN PNP PNP 25 25 25 40 40 40 40 40 25 2K-20K /K-70K 7K-70K.


    OCR Scan
    ges53052k-20k200mages5306+10/k-70kges5306a7k-70kd39c42n5174-2n51762n5175ges6220d38l1-3ges5307ges5308 PDF

    mhb 7001

    Abstract: PJ 1269 D39C4 GES6220 GES5822 GES5823 GES5824 GES5825 GES5826 GES5827
    Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 PACKAGE Device 'F E bvceo Type @10mA V Min. 1 I I • m Max. @ lc(mA) GES5822 NPhl 60 GES5823 a a 60 GES5824 40 GES5825 I 40 GES5826 40 00 00 60 00 «0 200 200 120 200 300 GES5827 GES5828 GES6000


    OCR Scan
    ges5822ges5823ges5824ges5825+8ges5826ges5827ges5828ges6000mhb 7001pj 1269d39c4ges6220 PDF

    2N3901

    Abstract: GES5822 GES5823 GES5824 GES5825 GES5826 GES5827 GES5828 GES6000 GES6001
    Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-92 P A C K A G E Device b v ceo Type @ 10mA V Min. 1 60 II 60 40 • m 40 GES5822 NPhl GES5823 a a GES5824 GES5825 I GES5826 GES5827 GES5828 GES6000 GES6001 GES6002 GES6003 GES6004 GES6005 GES6006


    OCR Scan
    ges5822ges5823ges5824ges5825+8ges5826ges5827ges5828ges6000ges60iges60142n3901ges6001 PDF

    2N5306 equivalent

    Abstract: ATI 200M D39C4 GES6220 2N4256 2N4424 2N4425 2N5174 2N5232 2N5232A
    Contextual Info: SILICON SIGNAL TRANSISTORS GENERAL PURPOSE AMPLIFIERS TO-98 PACKAGE Device Type BVCeo @ 10mA V hFE Min.-Max. @ IC, V C E (V> (V) Max. Typical (MHz) C cb @10V 1 MHz Typical (Pf) @ 25° C (mW) fT V C E (SA T ) l c . *B PT 2N4256 2N4424 2N4425 NPN NPN NPN


    OCR Scan
    2n42562n44242n4425130-b40+102im51722n51742n52322n5232a2n5249a100hz2n5306 equivalentati 200md39c4ges6220 PDF