PSA14 Search Results

b20100

Abstract: MPSA12
Contextual Info: S E M IC O N D U C T O R MPSA12 NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol

2N6427

Abstract: MMBT6427 MPSA14
Contextual Info: N 2N6427 MMBT6427 Mark: 1V NPN Darlington Transistor T his device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum Ratings* ta = 2 5 ° C unless o th e rw ise noted

ADF4156

Abstract: AN-202
Contextual Info: PSA1450F-LF Rev A1 Fractional-N Phase-Locked Loop Surface Mount Module Applications Application Notes • Fixed Wireless • Test Equipments • • AN-107: Manual Soldering Technique • AN-202: Programming Z-COMM PLLs Performance Specifications Min Frequency

Contextual Info: PSA1450F-LF PHASE LOCKED LOOP 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 Rev A1 PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 1050 - 1850 MHz • Step Size: 1000 KHz • Package Style: PLL-24S APPLICATIONS • Fixed Wireless

Contextual Info: 2N6427 MMBT6427 SOT-23 M ark: 1V NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum RâtinÇjS

2N5306

Abstract: MPSA14
Contextual Info: S S E f v l l G O f s l O L J C î T Q R ;:m 2N5306 NPN Darlington Transistor This device is designed for applications requiring extrem ely high cu rre n t gain at currents to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. Absolute Màximum RStinQS

2N6427

Abstract: MMBT6427 MPSA14
Contextual Info: N MMBT6427 2N6427 c TO-92 BE SOT-23 B M ark: 1V NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at collector currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Maximum Rstinys

ADF4156

Abstract: AN-202
Contextual Info: PSA1450F-LF PHASE LOCKED LOOP 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 Rev A1 PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 1050 - 1850 MHz • Step Size: 1000 KHz • Package Style: PLL-24S1 APPLICATIONS

mpsa14

Abstract: transistor k 2628 Technical transistor k 2628 MPS-A14 Small-Signal Transistors, FETs and Diodes Device transistor D 2624
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Darlington Transistors MPSA13 M PSA14* NPN Silicon COLLECTOR 3 'M o to ro la Preferred Device BA SE \ fy EMITTER 1 MAXIMUM RATINGS Rating Symbol Value Unit Vdc Vdc Collector-Emitter Voltage VCES 30 Collector-Base Voltage

Contextual Info: PSA1450F-LF Rev A1 Fractional-N Phase-Locked Loop Surface Mount Module Applications Application Notes • Fixed Wireless • Test Equipments • • AN-107: Manual Soldering Technique • AN-202: Programming Z-COMM PLLs Performance Specifications Min Frequency

ADF4156

Abstract: AN-200 AN-201 AN-202
Contextual Info: PSA1450F-LF PHASE LOCKED LOOP 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 Rev A1 PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 1050 - 1850 MHz • Step Size: 8 KHz • Package Style: PLL-24S APPLICATIONS • Fixed Wireless

2N5306

Abstract: 2N5306 FAIRCHILD SEMICONDUCTOR
Contextual Info: SEMICONDUCTOR ¡m 2N5306 NPN Darlington Transistor T his device is designed for applications requiring extrem ely high cu rre n t gain at cu rre n ts to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted

2N5308

Contextual Info: SEMICONDUCTOR ¡m 2N5308 NPN Darlington Transistor T his device is designed for applications requiring extrem ely high cu rre n t gain at cu rre n ts to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted

Contextual Info: SEMICONDUCTOR ¡m 2N5307 NPN Darlington Transistor T his device is designed for applications requiring extrem ely high cu rre n t gain at cu rre n ts to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. AbSOlUtG Maximum RâtinÇjS Symbol T A = 2 5°C unless o th e rw ise noted

Contextual Info: PSA1450F-LF PHASE LOCKED LOOP 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 Rev A1 PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 1050 - 1850 MHz • Step Size: 8 KHz • Package Style: PLL-24 APPLICATIONS • Fixed Wireless

MPSa13 equivalent

Abstract: mpsa13
Contextual Info: TO SHIBA MPSA13,14 Darlington Transistor Silicon NPN Epitaxial Type For Printer Drive, Core Drive, and LED Drive Applications Features • High DC Current Gain @ lc = 100mA - M PSA13hFE= 10,000 Min. - M PSA14hFE = 20,000 Min. Absolute Maximum Ratings Ta = 25 C

2N5307

Abstract: MPSA14
Contextual Info: S S E f v l l G O f s l O L J C î T Q R ;:m 2N5307 NPN Darlington Transistor This device is designed for applications requiring extrem ely high cu rre n t gain at currents to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. Absolute Màximum RStinQS

2N6426

Abstract: MPSA14
Contextual Info: SEMICONDUCTOR 2N6426 NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Màximum RStinQS TA = 2 5 ° C unless o th e rw ise noted

2N530

Abstract: 2N5308 MPSA14 to-92 NPN Darlington
Contextual Info: S S E f v l l G O f s l O L J C î T Q R ;:m 2N530Ô NPN Darlington Transistor This device is designed for applications requiring extrem ely high cu rre n t gain at currents to 1.0 A. S ourced from Process 05. See M PSA14 for characteristics. Absolute Màximum RStinQS

MPSA12

Abstract: MPSA14 to-92 NPN Darlington
Contextual Info: S E M IC O N D U C T O R MPSA12 NPN Darlington Transistor This device is designed for applications requiring extrem ely high current gain at currents to 1.0 A. Sourced from Process 05. See M PSA14 for characteristics. Absolute Màximum RStinQS TA = 2 5 ° C unless o th e rw ise noted

Contextual Info: PSA1450F-LF PHASE LOCKED LOOP 9939 Via Pasar • San Diego, CA 92126 TEL 858 621-2700 FAX (858) 621-2722 Rev A1 PHASE NOISE (1 Hz BW, typical) FEATURES • Frequency Range: 1050 - 1850 MHz • Step Size: 1000 KHz • Package Style: PLL-24S APPLICATIONS • Fixed Wireless

DDA 003A

Abstract: CON12 M68HC11 MC68HC11C0 MC68HC11C0CFN2 MC68HC11C0CFU2 MC68HC11C0CFU3 MC68HC11C0FU3 MC68HC11C0MFU2 MC68HC11C0VFN2
Contextual Info: MOTOROLA Order this document by MC68HC11C0TS/D SEMICONDUCTOR TECHNICAL DATA MC68HC11C0 Technical Summary 8-Bit Microcontroller 1 Introduction The MC68HC11C0 high-performance microcontroller unit MCU is an enhanced member of the M68HC11 family of microcontrollers. Excluding its new features, the MC68HC11C0 is very similar to

transistor E 13009

Abstract: transistor d 13009 E 13009 13007 m 13007 2 transistor 13009 PNP Transistor jE 13007 transistor E 13007 p 13009 transistor j 13009
Contextual Info: TOSHIBA {D IS CR ETE/O P TO } ' ÌO d | ^ 7550 0 0 1 b 4 ì3 T~ * 1 - Z 3 £ | «Transistors Small Signal Transistor T ype No. V e» SOT-23MOD V le (mA) hn V ce (V) Ic(mÀ) 2N3903 YTS3903 40 200 5 0 -1 5 0 1.0 10 2N3904 YTS3904 40 200 1 0 0 -3 0 0 1.0 10

c 337 25

Abstract: SC160D tic 2160 triac V130HE150 General electric SCR C220 ES5449 4533 gem 2n4401 2n3904 2222a 1N21 es5451
Contextual Info: GENERAL ^ E L E C T R I C SEMICONDUCTORS SEMICONDUCTEURS * HALBLEITER CONTENTS SOMMAIRE INHALT I N D E X . 3 I N D E X . 3