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2N530 Datasheets (319)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2N530	Motorola	Motorola Semiconductor Datasheet Library	Scan	PDF	75.06KB	1
2N530	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	81.92KB	1
2N530	Unknown	GE Transistor Specifications	Scan	PDF	38.01KB	1
2N530	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	150.75KB	1
2N530	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	92.1KB	1
2N530	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	95.71KB	1
2N5301	Central Semiconductor	Transistors (BJT) - Single, Discrete Semiconductor Products, TRANS NPN 40V 30A TO-3	Original	PDF		1
2N5301	On Semiconductor	POWER TRANSISTORS NPN SILICON - Pol=NPN / Pkg=TO3 / Vceo=40 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200	Original	PDF	256.71KB	6
2N5301	On Semiconductor	High-Power NPN Silicon Transistor	Original	PDF	121.36KB	8
2N5301	Semelab	Bipolar NPN Device in a Hermetically Sealed TO3 Metal Package - Pol=NPN / Pkg=TO3 / Vceo=40 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200	Original	PDF	10.97KB	1
2N5301	Advanced Semiconductor	Silicon Transistor Selection Guide	Scan	PDF	404.58KB	5
2N5301	API Electronics	25 AMPS / 30 AMPS NPN Transistors	Scan	PDF	209.36KB	2
2N5301	Diode Transistor	Transistor Short Form Data	Scan	PDF	75.59KB	1
2N5301	Fairchild Semiconductor	Misc. Data Book Scans 1975/76	Scan	PDF	36.55KB	1

2N5301	Fairchild Semiconductor	Full Line Condensed Catalogue 1977	Scan	PDF	76.34KB	2
2N5301	General Diode	Transistor Selection Guide	Scan	PDF	608.68KB	10
2N5301	General Electric	High current, high power, high speed N-P-N power transistor. 40V, 200W. - Pol=NPN / Pkg=TO3 / Vceo=40 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200	Scan	PDF	189.6KB	4
2N5301	General Transistor	Power Transistor Selection Guide	Scan	PDF	401.54KB	5
2N5301	Mospec	POWER TRANSISTORS(200W) - Pol=NPN / Pkg=TO3 / Vceo=40 / Ic=30 / Hfe=15-60 / fT(Hz)=2M / Pwr(W)=200	Scan	PDF	182.71KB	4
2N5301	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF	298.83KB	7

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2N530 Price and Stock

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Central Semiconductor Corp 2N5308 TRA TIN/LEAD - Tape and Reel (Alt: 2N5308 TRA TIN/LEAD)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2N5308 TRA TIN/LEAD	Tape & Reel			2,000	1 - 10 - 100 - 1000 - 10000 $0.70	Buy Now
Central Semiconductor Corp 2N5308 PBFREE - Boxed Product (Development Kits) (Alt: 2N5308 PBFREE)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	2N5308 PBFREE	Box			2,500	1 - 10 - 100 - 1000 - 10000 $0.51	Buy Now
VPT Components JAN2N5303 - Bulk (Alt: JAN2N5303)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	JAN2N5303	Bulk			11	1 - 10 - 100 $147.18 1000 $146.43 10000 $146.43	Buy Now
TTI	JAN2N5303	EDWF			5	1 - 10 $149.42 100 $149.42 1000 $149.42 10000 $149.42	Buy Now
Microchip Technology Inc JAN2N5303 Trans GP BJT NPN 80V 20A 2-Pin TO-3 Tray - Bulk (Alt: JAN2N5303)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	JAN2N5303	Bulk		50 Weeks	100	1 - 10 - 100 $148.19 1000 $136.79 10000 $135.06	Buy Now
Newark	JAN2N5303	Bulk			500	1 - 10 - 100 - 1000 $149.38 10000 $149.38	Buy Now
Microchip Technology Inc	JAN2N5303			50 Weeks		1 $149.38 10 $149.38 100 $149.38 1000 $149.38 10000 $149.38	Buy Now
Master Electronics	JAN2N5303					1 - 10 - 100 $135.24 1000 $135.24 10000 $135.24	Buy Now
NXP Semiconductors S32N530APCN0VUDT R102 COPPER - Trays (Alt: S32N530APCN0VUDT)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	S32N530APCN0VUDT	Tray		39 Weeks	420	1 - 10 - 100 - 1000 $112.04 10000 $110.34	Buy Now

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2N530 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
b1375 Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1 Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39	OCR Scan	2n3713 2n3714 2n3715 2n3716 +162n3789 2n3790 2n3791 2n3792 2n4340 2n4340s b1375 2sk270a 2sk150a mg15g1al2 2sa1051b mg50g2cl1 mg100g1al2 2sa1015 a1265n mg100g1al1	PDF
2N5306 Abstract: F63TNR MPSA14 PN2222N CBVK741B019 Contextual Info: 2N5306 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	2n5306 mpsa14 f63tnr pn2222n +1cbvk741b019	PDF
2N5301 Abstract: 2N5302 108 motorola transistor 2N4398 2N4399 2N5303 2N5745 Contextual Info: MOTOROLA Order this document by 2N5301/D SEMICONDUCTOR TECHNICAL DATA 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40 – 60 – 80 VOLTS	Original	2n5301/d 2n5301 2n5302 108 motorola transistor +42n4398 2n4399 2n5303 2n5745	PDF
D38S1-4 Abstract: 2N3901 D38S7 GES93 2N3391A 2N3844 2N3844A 2N3845 2N3845A 2N3900A Contextual Info: SILICON SIGNAL LOW NOISE AMPLIFIERS TO-98 PACKAGE Type b v CEO 2N3391A 2N3844 2N3844A 2N3845 2N3845A NPN NPN NPN NPN NPN 25 30 30 30 30 2N3900A 2N3901 2N5232A 2N5249A 2N5306A NPN NPN NPN NPN NPN 18 18 50 50 25 250-&00 350-700 250-500 400-800 7K-70K 2mA, 2mA,	OCR Scan	2n3391a 2n3844 2n3844a 2n3845 +82n3845a 2n3900a 25g-b00 100ma 2n3901 d38s1-4 d38s7 ges93	PDF
TIP 110 transistor Abstract: TIP 22 transistor 2N5302 TIP 41 transistor 2N5301 TIP 122 transistor APPLICATION circuit PIT 3055 TIP 122 transistor TRANSISTOR tip 127 transistor tip 3055 Contextual Info: TYPES 2N5301, 2N5302, 2N5303 N-P-N SINGLE-DIFFUSED SILICON POWER TRANSISTORS FO R P O W E R -A M P U F IE R AN D H IG H -SPEED -SW ITC H IN G A P P L IC A T IO N S 2N5301, 2N5302 D E S IG N E D F O R C O M P L E M E N T A R Y U SE W ITH 2N 4398, 2N4399 200 W at 2 5 °C Case Temperature	OCR Scan	2n5301 2n5302 2n5303 2n4398 +92n4399 tip 110 transistor tip 22 transistor tip 41 transistor tip 122 transistor application circuit pit 3055 tip 122 transistor transistor tip 127 transistor tip 3055	PDF
2N5302 Abstract: 2N5302 JANTXV Contextual Info: 2N5302 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2n5302 o204aa 31-jul-02 2n5302 jantxv	PDF
2N3713 Abstract: 2n3055 complement 2N5068 2N3055 2N3714 2N3789 2N3790 Contextual Info: TRANSISTORS—POWER NPN TO—3 PACKAGE VOLTS *c AMPS MIN MAX 2N5067 40 5 20- 80 @ 1.0 1.5 @ 5 87.5 4.0 2N4901 2N4913 40 5 25 - 100 @ 2.5 1.5 @ 5 87.5 4.0 2N4904 2N5301 40 30 15- 60 @ 2.0 @ 20 2.0 2N4398 2N5068 60 5 20- 80 @ 15 1.0 1.5 @ 5 87.5 4.0 2N4902 2N4914	OCR Scan	2n5067 2n4901 2n4904 2n4398 +122n4902 2n4905 2n3789 2n3791 2n4399 2n4903 2n3713 2n3055 complement 2n5068 2n3055 2n3714 2n3790	PDF
D40C2 Contextual Info: CENTRAL SEMICONDUCTOR fc,l D \| nfl'HbB 4 1~3 T"29“29 SMALL SIGNAL DARLINGTON TRANSISTORS EPOXY lc ^ ^ O O m A TYPE NO. OPERATING AND STORAGE TEMPERATURE -6 5 °to + 1 5 0 °C Jc VCEO Amps Volts 2N5305 0.3 25 2N5306 0.3 2N 5306A Pd (Max) hFE @ 1C TA=25°C	OCR Scan	2n5305 2n5306 2n5307 2n5308 +7ges5305 s5306 ges5306a ges5307 ges5308 ges5308a d40c2	PDF
2N5303 Abstract: SPT5303 75 watt npn switching transistor Contextual Info: 2N5303, SPT5303 200 WATT NPN SILICON POWER TRANSISTOR S o lid State Devices Incorporated 14830 Valley View Avenue La Mirada, California 90638 Telephone 213 921-9660 T W X -910-583-4807 _ • H F E .15-60 @10 Amps	OCR Scan	2n5303 spt5303 twx-910-583-4807 300/js +175 watt npn switching transistor	PDF
2N5302 Abstract: 2N5303 2n5302 transistor TRANSISTOR 2n5302 1000C 2N5302 JANTXV Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/456 Devices Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C C Collector-Emitter Voltage	Original	mil-prf-19500/456 2n5302 2n5303 1000c +4o-204aa 2n5302 transistor transistor 2n5302 2n5302 jantxv	PDF
Contextual Info: 2N5301 N-CHANNEL JFET Linear Systems replaces discontinued LF5301 and PF5301 The 2N5301 is a very High Input Impedance N-Channel JFET amplifier The 2N5301 N-channel JFET is designed to provide performance amplification at low frequencies and with low noise.	Original	2n5301 lf5301 pf5301	PDF
Contextual Info: 2N5302 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2n5302 o204aa 18-jun-02	PDF
Contextual Info: ÏÏÏ 3875081 G E SOLID D!T“\| 3 f l 7 5 D f l l STATE 01E 0G173fii 17384 t^ \| ~ J~- 2 3 - / S ' D General-Purpose Power 2N5301, 2N5302, 2N5303 High-Current High-Power High-Speed N-P-N Power	OCR Scan	0g173fii 2n5301 2n5302 2n5303 +4tq-204aa rca-2n5301 2n53q2 2ns303	PDF
Contextual Info: 2N5302 High−Power NPN Silicon Transistor • . . . for use in power amplifier and switching circuits applications. Low Collector−Emitter Saturation Voltage − VCE sat = 0.75 Vdc (Max) @ IC = 10 Adc ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ	Original	2n5302 2n5302/d	PDF

Contextual Info: TECHNICAL DATA NPN HIGH POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/ 456 Devices Qualified Level 2N5302 JANTX JANTXV 2N5303 MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C C Collector-Emitter Voltage	Original	mil-prf-19500/2n5302 2n5303 1000c +1o-204aa	PDF
2N5308 Abstract: PN2222N TO5 package D9842 F63TNR MPSA14 CBVK741B019 PN222N D74z transistor k 0247 Contextual Info: 2N5308 C TO-92 BE NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 1.0 A. Sourced from Process 05. See MPSA14 for characteristics. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted	Original	2n5308 mpsa14 pn2222n to5 package +6d9842 f63tnr cbvk741b019 pn222n d74z transistor k 0247	PDF
2N5301 Abstract: 2N5302 2n5302 transistor 2N4398 2N4399 2N5303 2N5745 Contextual Info: ON Semiconductort 2N5301 2N5302 2N5303 High-Power NPN Silicon Transistors . . . for use in power amplifier and switching circuits applications. • High Collector–Emitter Sustaining Voltage — • • • 20 AND 30 AMPERE POWER TRANSISTORS NPN SILICON 40–60–80 VOLTS	Original	2n5301 2n5302 2n5303 2n4398 +32n4399 2n5302 transistor 2n5745	PDF
2N5302 Abstract: 2N5303 jantx 2n5302 adc ic 1000C Contextual Info: TECHNICAL DATA 2N5302 JANTX, TXV 2N5303 JANTX, TXV MIL-PRF Processed per MIL-PRF-19500/456 DEVICES QPL NPN SILICON HIGH-POWER TRANSISTOR MAXIMUM RATINGS Ratings Symbol 2N5302 2N5303 Unit VCEO VCBO VEBO IC IB PT 60 60 80 80 Vdc Vdc Vdc Adc Adc W W/0C Collector-Emitter Voltage	Original	2n5302 2n5303 mil-prf-19500/456 1000c +3o-204-aa jantx 2n5302 adc ic	PDF
Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N5308 Features • This device is designed for applications requiring extremely high current gain at current to 1.0A	Original	2n5308	PDF
2N39024 Abstract: jantx 2n5302 Contextual Info: BIPOLAR N P N P O W E R T R A N S IS T O R S PEAK PACKAGE TO-204 TO-3 VCI (sot) DEVICE bvceo •c hFE TYPE VOLTS AMPS 60 10.0 2N3716' 80 10 2N39024 325 2.5 30-90 2N5302’ * 60 30.0 15-60 2N5303* 80 20.0 15-60 10.0/4.0 1.5 10.0/2.0 2N5685* 60 50.0 15-60	OCR Scan	2n3715 2n3716 2n39024 2n5302 +72n5303 2n5685 2n5686 2n6249 2n6250 2n6251 jantx 2n5302	PDF
2N4398 Abstract: 2N5745 4399 2N4399 2n5301 Contextual Info: Inchange Semiconductor Product Specification 2N4398 2N4399 2N5745 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N5301/5302/5303 ・Low collector saturation voltage ・Excellent safe operating area APPLICATIONS ・For use in power amplifier and switching	Original	2n4398 2n4399 2n5745 2n5301/5302/5303 +24399 2n5301	PDF
2N5306 NATIONAL SEMICONDUCTOR Abstract: NSDU45 darlington transistor MPSw45 D40C2 D40K1 NSDU45A Contextual Info: This NPN Transistors v EBO V Min Ic e s ' 'CBO a (jiA) Max Its Case Style 2N5305 TO-92 (94) 0.1 2N5306 TO-92 (94) 2N5307 *c @ VCE (mA) (V) VCE(SAT) VBE(SAT) . (V) & (V) 0 C Max Min Max ( ) fT (MHz) C0b (pF) Max Min @ lc (mA) Process No. 25 2000 20,000 2	OCR Scan	d0370b0 2n5306 national semiconductor nsdu45 darlington transistor mpsw45 +3d40c2 d40k1 nsdu45a	PDF
2N5302 Contextual Info: 7 15 * 15 37 OQg^S^ SGS-THOMSON [Mæ iCTiMO gS S 6 S - THOMSON 1 • 3 - ( £=> 2N5301/02/03 2N4398/99/5745 3GE D MEDIUM POWER LINEAR AND SWITCHING APPLICATIONS DESCRIPTIO N The 2N5301/2/3, are silicon epitaxial-base NPN transistors in Jedec TO-3 metal case. They are in	OCR Scan	2n5301/02/03 2n4398/99/5745 2n5301/2/3 2n4398/99 +52n5745 2n5301 2n5302 2n5301/2/3-2n4398/99-2n5745 gqs1334	PDF
2N5301 Contextual Info: 2N5301 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)	Original	2n5301 o204aa 31-jul-02	PDF

2N530 Search Results

2N530 Datasheets (319)

2N530 Price and Stock

Central Semiconductor Corp 2N5308 TRA TIN/LEAD

Central Semiconductor Corp 2N5308 PBFREE

VPT Components JAN2N5303

Microchip Technology Inc JAN2N5303

NXP Semiconductors S32N530APCN0VUDT

2N530 Datasheets Context Search

b1375

2N5306

2N5301

D38S1-4

TIP 110 transistor

2N5302

2N3713

D40C2

2N5303

2N5302

2N5308

2N5301

2N5302

2N39024

2N4398

2N5306 NATIONAL SEMICONDUCTOR

2N5302

2N5301