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    D9842 Price and Stock

    Samtec Inc

    Samtec Inc HW-04-14-S-D-984-238

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    Mouser Electronics HW-04-14-S-D-984-238
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    Powell Electronics HW-04-14-S-D-984-238 383 1
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    Samtec Inc ZW-08-14-G-D-984-200

    FLEXIBLE BOARD STACKING HEADER - Bulk (Alt: ZW-08-14-G-D-984-200)
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    Mouser Electronics ZW-08-14-G-D-984-200
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    Sager ZW-08-14-G-D-984-200 201 1
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    Powell Electronics ZW-08-14-G-D-984-200 133 1
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    Samtec Inc ZW-10-14-L-D-984-275

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    Mouser Electronics ZW-10-14-L-D-984-275
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    Newark ZW-10-14-L-D-984-275 Bulk 167 1
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    Sager ZW-10-14-L-D-984-275 167 1
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    Powell Electronics ZW-10-14-L-D-984-275 110 1
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    Samtec Inc FFSD-25-D-98.42-01-N

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    Mouser Electronics FFSD-25-D-98.42-01-N
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    Sager FFSD-25-D-98.42-01-N 1
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    Master Electronics FFSD-25-D-98.42-01-N
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    Samtec Inc ZW-18-14-F-D-984-223

    Board Stackers & Spacers, Pin Header, 24.99 mm, 36 Contacts, Solder, 2 Rows, 2.54 mm, ZW Series - Bulk (Alt: ZW-18-14-F-D-984-223)
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    Mouser Electronics ZW-18-14-F-D-984-223
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    Sager ZW-18-14-F-D-984-223 1
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    Master Electronics ZW-18-14-F-D-984-223
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    Find more D9842 price and stock on Findchips.com

    D9842 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TAPE AMMO PACK TO92

    Abstract: TO-92 Package Dimensions
    Contextual Info: TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample FAIRCHILD SEMICONDUCTOR CORPORATION LOT: NSID: D/C1: CBVK741B019 QTY: PN2222N See Fig 2.0 for various Reeling Styles HTB:B 10000 SPEC: D9842 SPEC REV: Package Information TO-92 Tape and Reel Data and Package Dimensions


    Original     		cbvk741b019pn2222nd9842f63tnr+5375mm267mmpn222ntape ammo pack to92to-92 package dimensions PDF

    D72Z

    Abstract: CBVK741B019 F63TNR PN2222N D73Z J32Z
    Contextual Info: TO-226AE Tape and Reel Data TO-226 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample FAIRCHILD SEMICONDUCTOR CORPORATION CBVK741B019 LOT: PN2222N NSID: D/C1: QTY: See Fig 2.0 for various Reeling Styles HTB:B 10000 SPEC: D9842 SPEC REV:


    Original     		o-226aeo-226cbvk741b019pn2222n+7d9842f63tnrpn222nd9842abd72zd73zj32z PDF

    2N4401_D11Z

    Abstract: PN2222N TO-92 Tape and Reel Data D81Z CLIP-2 j21z CBVK741B019 F63TNR Fairchild taping TO-92 transistor k 0247 J60Z
    Contextual Info: TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample FAIRCHILD SEMICONDUCTOR CORPORATION LOT: NSID: D/C1: CBVK741B019 QTY: PN2222N See Fig 2.0 for various Reeling Styles HTB:B 10000 SPEC: D9842 SPEC REV:


    Original     		cbvk741b019pn2222nd9842f63tnr+10pn222nd9842ab375mm2n4401_d11zto-92 tape and reel data d81zclip-2j21zfairchild taping to-92transistor k 0247j60z PDF

    PN2222N

    Abstract: BCxxx TRANSISTOR transistor 2001 H1 PN222N D27Z TAPE AMMO PACK TO92 transistor k 0247 TRANSISTOR W2 CBVK741B019 F63TNR
    Contextual Info: TO-92 Tape and Reel Data TO-92 Packaging Configuration: Figure 1.0 TAPE and REEL OPTION FSCINT Label sample See Fig 2.0 for various Reeling Styles FAIRCHILD SEMICONDUCTOR CORPORATION LOT: CBVK741B019 PN2222N NSID: D/C1: HTB:B QTY: 10000 SPEC: D9842 SPEC REV:


    Original     		cbvk741b019pn2222nd9842f63tnr+8pn222n375mmbcxxx transistortransistor 2001 h1d27ztape ammo pack to92transistor k 0247transistor w2 PDF

    MPSA65

    Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
    Contextual Info: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*


    Original     		mmbta65pzta65ot-23ot-223+6mpsa64mpsa65cbvk741b019f63tnrpn2222nbel 188 transistor PDF

    On semiconductor date Code sot-223

    Abstract: BCP56 CBVK741B019 F63TNR F852 PN2222A pcb thermal sot-223 4 layer sot-223 package dimensions
    Contextual Info: BCP56 BCP56 C B C E SOT-223 NPN General Purpose Amplifier These devices are designed for general purpose medium power amplifiers and switches requiring collector currents to 1A. Sourced from Process 39. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted


    Original     		bcp56ot-223on semiconductor date code sot-223cbvk741b019+5f63tnrf852pn2222apcb thermal sot-223 4 layersot-223 package dimensions PDF

    CBVK741B019

    Abstract: F63TNR F852 FDS6814 FDS9953A L86Z AA MARKING CODE SO8
    Contextual Info: FDS6814 Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrenchTM process. It has been optimized for power management applications which require a wide


    Original     		fds6814cbvk741b019f63tnrf852+3fds9953al86zaa marking code so8 PDF

    Contextual Info: FDS3690 100V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • RDS ON = 0.066 Ω @ VGS = 6 V.


    Original     		fds3690 PDF

    transistor 2N5461

    Contextual Info: MMBF5460 MMBF5461 2N5460 2N5461 2N5462 G D G S TO-92 SOT-23 S Mark: 6E / 61U D P-Channel General Purpose Amplifier This device is designed primarily for low level audio and general purpose applications with high impedance signal sources. Sourced from Process 89.


    Original     		2n54602n54612n5462mmbf5460+2mmbf5461transistor 2n5461 PDF

    Contextual Info: FDS2670 200V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.2 A, 200 V. RDS ON = 0.120 Ω @ VGS = 10 V


    Original     		fds2670 PDF

    Contextual Info: Si4420DY Single N-Channel Logic Level PowerTrenchTM MOSFET General Description Features This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		si4420dy PDF

    Contextual Info: Si9945DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		si9945dy PDF

    FDR835N

    Abstract: 831N
    Contextual Info: FDR6678A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for


    Original     		fdr6678afdr835n831n PDF

    PART NUMBER MARKING SC70-6

    Abstract: pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70
    Contextual Info: FFB3946 FFB3946 E2 B2 C1 Package: SC70-6 Device Marking: .AB Note: The " . " dot signifies Pin 1 C2 B1 Transistor 1 is NPN device, Transistor 2 is PNP device. E1 NPN & PNP General Purpose Amplifier SC70-6 Surface Mount Package ThIs dual complementary device was designed for use as a general purpose amplifier and switching


    Original     		ffb3946sc70-62n39042n3906+3part number marking sc70-6pin configuration npn transistor 2n3904marking code 21 sc70 PDF

    2539a

    Abstract: IC TRACE CODE ON BOX LABEL INFORMATION AA MARKING CODE SO8 marking code ng Fairchild TRACE CODE ON BOX PACKING LABEL
    Contextual Info: FDS5670 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • These MOSFETs feature faster switching and lower gate


    Original     		fds56702539aic trace code on box label informationaa marking code so8+2marking code ng fairchildtrace code on box packing label PDF

    Contextual Info: Si4936DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching


    Original     		si4936dy PDF

    Contextual Info: FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain


    Original     		fdt434p PDF

    Contextual Info: May 1996 NDS9435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density


    Original     		nds9435a PDF

    F852 transistor

    Contextual Info: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high


    Original     		fdt439nf852 transistor PDF

    Contextual Info: FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for


    Original     		fd8305nfdr8305n PDF

    Contextual Info: Si4953DY Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching


    Original     		si4953dy PDF

    Contextual Info: FDC6327C Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate


    Original     		fdc6327c PDF

    AA MARKING CODE SO8

    Contextual Info: FDS6680S 30V N-Channel PowerTrench SyncFET General Description Features The FDS6680S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low


    Original     		fds6680sfds6680aa marking code so8 PDF

    Contextual Info: FDC5612 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4.3 A, 60 V. RDS ON = 0.055 W


    Original     		fdc5612 PDF