831N Search Results

831N Result Highlights (5)

Part	Manufacturer	Description	Download
51939-831NSPLF	Amphenol Communications Solutions	PwrBlade®, Power Connectors, 20S Right Angle Header, Press Fit	PDF
10136656-0831NLF	Amphenol Communications Solutions	Minitek® Pwr 3.0, Single Row, Vertical Through Hole Header, 15u\\ Gold (Tin on Tails) plating, 8 Positions, Natural Color, GW Compatible LCP, Tray packing.	PDF
RJE5818831N1	Amphenol Communications Solutions	Modular Jack - 8P8C, RA, Cat5e, THT, Standard Profile, Single Port, Shield With Top EMI Tabs Only, With LEDs	PDF
RJE6018831N1	Amphenol Communications Solutions	Modular Jack - 8P8C, RA, Cat6A, THT, Standard Profile, Single Port, Shield With Top EMI Tabs Only, With LEDs	PDF
RJE4818831N1	Amphenol Communications Solutions	Modular Jack - 8P8C, Right Angle, Cat5e, THT, Low Profile, Single Port, Shield With Top EMI Tabs Only, With LEDs	PDF

831N Price and Stock

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Conesys M83723/76R1831N-CO - Bulk (Alt: M83723/76R1831N-CO)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	M83723/76R1831N-CO	Bulk	10	18 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Amphenol Corporation M83723/96G1831N Circular Connector, MIL-DTL-83723 Series III, Straight Plug, 31 Contacts, Crimp Pin, Threaded, 18-31 - Bulk (Alt: M83723/96G1831N)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas ()	M83723/96G1831N	Bulk	1	20 Weeks	1	1 - 10 - 100 - 1000 - 10000 -	Buy Now
	M83723/96G1831N	Bulk		20 Weeks	50	1 - 10 - 100 $218.15 1000 $204.12 10000 $204.12	Buy Now
Amphenol Corporation M83723/72G1831N Circular Connector, MIL-DTL-83723 Series III, Wall Mount Receptacle, 31 Contacts, Crimp Pin, Bayonet - Bulk (Alt: M83723/72G1831N)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	M83723/72G1831N	Bulk		20 Weeks	50	1 - 10 - 100 $170.14 1000 $159.36 10000 $159.36	Buy Now
Conesys M83723/72G1831N - Bulk (Alt: M83723/72G1831N)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	M83723/72G1831N	Bulk		20 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Interstate Connecting Components	M83723/72G1831N					1 $102.14 10 $89.72 100 $84.04 1000 $84.04 10000 $84.04	Buy Now
Amphenol Corporation M83723/73Z1831N - Bulk (Alt: M83723/73Z1831N)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	M83723/73Z1831N	Bulk		20 Weeks	50	1 - 10 - 100 $161.10 1000 $150.89 10000 $150.89	Buy Now

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831N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CBVK741B019 Abstract: F63TNR F852 FDS6814 FDS9953A L86Z AA MARKING CODE SO8 Contextual Info: FDS6814 Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrenchTM process. It has been optimized for power management applications which require a wide	Original	fds6814 cbvk741b019 f63tnr f852 +3fds9953a l86z aa marking code so8	PDF
Contextual Info: FDS3690 100V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • RDS ON = 0.066 Ω @ VGS = 6 V.	Original	fds3690	PDF
FDR835N Abstract: 831N Contextual Info: FDR6678A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for	Original	fdr6678a fdr835n 831n	PDF
Contextual Info: Si4936DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching	Original	si4936dy	PDF
Contextual Info: May 1996 NDS9435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density	Original	nds9435a	PDF
F852 transistor Contextual Info: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high	Original	fdt439n f852 transistor	PDF
Contextual Info: FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for	Original	fd8305n fdr8305n	PDF
Contextual Info: Si4953DY Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching	Original	si4953dy	PDF
CBVK741B019 Abstract: F63TNR F852 FDR835N NDH8321C Contextual Info: January 1999 NDH8321C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very	Original	ndh8321c cbvk741b019 f63tnr f852 +1fdr835n	PDF
CBVK741B019 Abstract: F63TNR F852 FDR8305N FDR835N Contextual Info: FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for	Original	fdr8305n cbvk741b019 f63tnr f852 +1fdr835n	PDF
7w66 Abstract: Si4435DY D665 Contextual Info: Si4435DY P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching	Original	si4435dy 7w66 d665	PDF
d7566 Contextual Info: October 1998 FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the	Original	fds6675 ot-23 d7566	PDF
CBVK741B019 Abstract: F63TNR F852 NDH8520C 28A-600 diode tnr Contextual Info: December 1996 NDH8520C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density	Original	ndh8520c cbvk741b019 f63tnr f852 +228a-600 diode tnr	PDF
CBVK741B019 Abstract: F63TNR F852 FDR835N NDH831N Contextual Info: July 1996 831N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is	Original	ndh831n cbvk741b019 f63tnr f852 +1fdr835n	PDF

FDS6680S Abstract: CBVK741B019 F011 F63TNR F852 FDS6690A FDS6690S FDS6984S L86Z Contextual Info: FDS6984S Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6984S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages	Original	fds6984s fds6680s cbvk741b019 f011 +5f63tnr f852 fds6690a fds6690s l86z	PDF
F63TNR Abstract: F852 D84Z CBVK741B019 FDR835N 831N Contextual Info: SuperSOTTM-8 Tape and Reel Data and Package Dimensions SSOT-8 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Anti static Cover Tape SSOT-8 parts are shipped in tape. The carrier tape is made from a di ssipat ive carbo n filled po ly carbon ate	Original	f63tnr 330cm 177cm f852 +4d84z cbvk741b019 fdr835n 831n	PDF
CBVK741B019 Abstract: F63TNR F852 FDR835N Contextual Info: SuperSOTTM-8 Tape and Reel Data SSOT-8 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Anti static Cover Tape SSOT-8 parts are shipped in tape. The carrier tape is made from a di ssipat ive carbo n filled po ly carbon ate	Original	f63tnr 330cm 177cm cbvk741b019 +2f852 fdr835n	PDF
CBVK741B019 Abstract: F63TNR F852 FDR6678A FDR835N Contextual Info: FDR6678A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for	Original	fdr6678a cbvk741b019 f63tnr f852 +1fdr835n	PDF
F63TNR Abstract: F852 FDR856P SOIC-16 Contextual Info: March 1998 FDR856P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very	Original	fdr856p ot-23 f63tnr f852 +1soic-16	PDF
CBVK741B019 Abstract: F63TNR F852 FDR8521L FDR835N FDR8521 Contextual Info: FDR8521L P-Channel MOSFET With Gate Driver For Load Switch Application General Description Features This device is designed for configuration as a load switch and is particularly suited for power management in portable battery powered electronic equipment. Designed to	Original	fdr8521l cbvk741b019 f63tnr f852 +2fdr835n fdr8521	PDF
CBVK741B019 Abstract: F63TNR F852 FDR835N NDH8301N Contextual Info: December 1996 NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is	Original	ndh8301n cbvk741b019 f63tnr f852 +1fdr835n	PDF
Contextual Info: October 1998 FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the	Original	fds6675 ot-23	PDF
FAIRCHILD soic MARKING Contextual Info: FDS3590 80V N-Channel PowerTrenchTM MOSFET Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 6.5 A, 80 V. RDS ON = 0.037 Ω	Original	fds3590 fairchild soic marking	PDF
Contextual Info: FDS6375 Single P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior	Original	fds6375	PDF

831N Search Results

831N Result Highlights (5)

831N Price and Stock

Conesys M83723/76R1831N-CO

Amphenol Corporation M83723/96G1831N

Amphenol Corporation M83723/72G1831N

Conesys M83723/72G1831N

Amphenol Corporation M83723/73Z1831N

831N Datasheets Context Search

CBVK741B019

FDR835N

F852 transistor

CBVK741B019

CBVK741B019

7w66

d7566

CBVK741B019

CBVK741B019

FDS6680S

F63TNR

CBVK741B019

CBVK741B019

F63TNR

CBVK741B019

CBVK741B019

FAIRCHILD soic MARKING