831N Search Results

CBVK741B019

Abstract: F63TNR F852 FDS6814 FDS9953A L86Z AA MARKING CODE SO8
Contextual Info: FDS6814 Dual N-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using a rugged gate version of Fairchild's advanced PowerTrenchTM process. It has been optimized for power management applications which require a wide

Contextual Info: FDS3690 100V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • RDS ON = 0.066 Ω @ VGS = 6 V.

FDR835N

Abstract: 831N
Contextual Info: FDR6678A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

Contextual Info: Si4936DY Dual N-Channel Enhancement Mode MOSFET General Description Features These N-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

Contextual Info: May 1996 NDS9435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

F852 transistor

Contextual Info: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high

Contextual Info: FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for

Contextual Info: Si4953DY Dual P-Channel Enhancement Mode MOSFET General Description Features These P-Channel Enhancement Mode MOSFETs are produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize onstate resistance and yet maintain superior switching

CBVK741B019

Abstract: F63TNR F852 FDR835N NDH8321C
Contextual Info: January 1999 NDH8321C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

CBVK741B019

Abstract: F63TNR F852 FDR8305N FDR835N
Contextual Info: FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for

7w66

Abstract: Si4435DY D665
Contextual Info: Si4435DY P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

d7566

Contextual Info: October 1998 FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the

CBVK741B019

Abstract: F63TNR F852 NDH8520C 28A-600 diode tnr
Contextual Info: December 1996 NDH8520C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density

CBVK741B019

Abstract: F63TNR F852 FDR835N NDH831N
Contextual Info: July 1996 831N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

FDS6680S

Abstract: CBVK741B019 F011 F63TNR F852 FDS6690A FDS6690S FDS6984S L86Z
Contextual Info: FDS6984S Dual Notebook Power Supply N-Channel PowerTrench SyncFET General Description Features The FDS6984S is designed to replace two single SO-8 MOSFETs and Schottky diode in synchronous DC:DC power supplies that provide various peripheral voltages

F63TNR

Abstract: F852 D84Z CBVK741B019 FDR835N 831N
Contextual Info: SuperSOTTM-8 Tape and Reel Data and Package Dimensions SSOT-8 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Anti static Cover Tape SSOT-8 parts are shipped in tape. The carrier tape is made from a di ssipat ive carbo n filled po ly carbon ate

CBVK741B019

Abstract: F63TNR F852 FDR835N
Contextual Info: SuperSOTTM-8 Tape and Reel Data SSOT-8 Packaging Configuration: Figure 1.0 Customized Label Packaging Description: F63TNR Label Anti static Cover Tape SSOT-8 parts are shipped in tape. The carrier tape is made from a di ssipat ive carbo n filled po ly carbon ate

CBVK741B019

Abstract: F63TNR F852 FDR6678A FDR835N
Contextual Info: FDR6678A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for

F63TNR

Abstract: F852 FDR856P SOIC-16
Contextual Info: March 1998 FDR856P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very

CBVK741B019

Abstract: F63TNR F852 FDR8521L FDR835N FDR8521
Contextual Info: FDR8521L P-Channel MOSFET With Gate Driver For Load Switch Application General Description Features This device is designed for configuration as a load switch and is particularly suited for power management in portable battery powered electronic equipment. Designed to

CBVK741B019

Abstract: F63TNR F852 FDR835N NDH8301N
Contextual Info: December 1996 NDH8301N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is

Contextual Info: October 1998 FDS6675 Single P-Channel, Logic Level, PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the

FAIRCHILD soic MARKING

Contextual Info: FDS3590 80V N-Channel PowerTrenchTM MOSFET Features General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 6.5 A, 80 V. RDS ON = 0.037 Ω

Contextual Info: FDS6375 Single P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior