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SI4435DY Datasheets (15)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
Si4435DY	Fairchild Semiconductor	P-Channel Logic Level PowerTrench MOSFET	Original	PDF	314.37KB	6
SI4435DY	Fairchild Semiconductor	30V P-Channel PowerTrench MOSFET	Original	PDF	90.81KB	5
SI4435DY	International Rectifier	HEXFET Power MOSFET	Original	PDF	88.41KB	8
SI4435DY	Kexin	P-Channel MOSFET	Original	PDF	182.46KB	2
Si4435DY	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
Si4435DY	International Rectifier	HEXFET Power MOSFET	Scan	PDF	328.64KB	8
SI4435DY_NF073	Fairchild Semiconductor	30V P-Channel PowerTrench MOSFET	Original	PDF	90.82KB	5
SI4435DY_NL	Fairchild Semiconductor	30V P-Channel PowerTrench MOSFET	Original	PDF	90.82KB	5
SI4435DYPBF	International Rectifier	HEXFET Power MOSFET	Original	PDF	106.7KB	8
SI4435DY-REVA	Vishay Telefunken	P-Channel 30-V (D-S) MOSFET	Original	PDF	51.42KB	4
SI4435DY-REVA	Siliconix	Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFET, P-Channel, -30V, Single, Pkg Style TSSOP-8	Scan	PDF	41.73KB	1
Si4435DY SPICE Device Model	Vishay	P-Channel 30-V (D-S) MOSFET	Original	PDF	177.58KB	3
SI4435DYTR	International Rectifier	-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package	Original	PDF	88.41KB	8
SI4435DYTRPBF	International Rectifier		Original	PDF	88.41KB	8

SI4435DY-T1-E3	VBsemi Electronics Co Ltd	P-Channel 30-V, 9.0-A MOSFET in DSO-8 package with RDS(on) of 0.018 ohms at VGS = -10 V and 0.024 ohms at VGS = -4.5 V, suitable for load and battery switch applications.	Original	PDF

SI4435DY Price and Stock

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onsemi SI4435DY MOSFET P-CH 30V 8.8A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SI4435DY	Cut Tape	22,802		1	1 $1.65 10 $1.04 100 $0.69 1000 $0.54 10000 $0.54	Buy Now
	SI4435DY	Tape & Reel	20,000		2,500	1 - 10 - 100 - 1000 - 10000 $0.41	Buy Now
Newark ()	SI4435DY	Cut Tape	6,372		5	1 - 10 $1.72 100 $0.72 1000 $0.52 10000 $0.50	Buy Now
	SI4435DY	Tape & Reel	6,372		100	1 - 10 - 100 $0.72 1000 $0.52 10000 $0.50	Buy Now
Verical	SI4435DY		2,500		671	1 - 10 - 100 - 1000 $0.52 10000 $0.46	Buy Now
Bristol Electronics	SI4435DY		996		1	1 $0.66 10 $0.66 100 $0.33 1000 $0.13 10000 $0.13	Buy Now
Quest Components ()	SI4435DY		796			1 $0.88 10 $0.88 100 $0.26 1000 $0.18 10000 $0.18	Buy Now
	SI4435DY		796			1 $1.36 10 $1.36 100 $0.68 1000 $0.54 10000 $0.54	Buy Now

Rochester Electronics	SI4435DY		2,500		1	1 - 10 - 100 $0.50 1000 $0.41 10000 $0.37	Buy Now
TME	SI4435DY		1,388		1	1 $1.46 10 $0.98 100 $0.69 1000 $0.55 10000 $0.55	Buy Now
UMW SI4435DY MOSFET P-CH 30V 8.8A 8SOIC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SI4435DY	Tape & Reel	5,467		3,000	1 - 10 - 100 - 1000 - 10000 $0.15	Buy Now
	SI4435DY	Cut Tape	5,467		1	1 $0.76 10 $0.47 100 $0.30 1000 $0.23 10000 $0.23	Buy Now
	SI4435DY	Digi-Reel	2,467		1	1 $0.76 10 $0.47 100 $0.30 1000 $0.23 10000 $0.23	Buy Now
Infineon Technologies AG SI4435DYTRPBF MOSFET P-CH 30V 8A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	SI4435DYTRPBF	Tape & Reel	22			1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI4435DYTRPBF	Digi-Reel	22			1 - 10 - 100 - 1000 - 10000 -	Buy Now
	SI4435DYTRPBF	Cut Tape	22		1	1 $1.32 10 $0.83 100 $0.83 1000 $0.83 10000 $0.83	Buy Now
Avnet Americas ()	SI4435DYTRPBF	Tape & Reel			4,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
	SI4435DYTRPBF	Ammo Pack			1	1 $1.27 10 $1.27 100 $0.52 1000 $0.37 10000 $0.34	Buy Now
Newark ()	SI4435DYTRPBF	Cut Tape	28		1	1 $1.35 10 $1.35 100 $0.56 1000 $0.39 10000 $0.33	Buy Now
	SI4435DYTRPBF	Tape & Reel	28		100	1 - 10 - 100 $0.56 1000 $0.39 10000 $0.33	Buy Now
	SI4435DYTRPBF	Tape & Reel			4,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Verical	SI4435DYTRPBF		6,738		7	1 - 10 $0.59 100 $0.50 1000 $0.38 10000 $0.29	Buy Now
RS	SI4435DYTRPBF	Bulk			4,000	1 - 10 - 100 - 1000 - 10000 $0.35	Get Quote

Rochester Electronics	SI4435DYTRPBF				1	1 - 10 - 100 $0.37 1000 $0.30 10000 $0.27	Buy Now
TME	SI4435DYTRPBF				1	1 $1.02 10 $0.73 100 $0.46 1000 $0.33 10000 $0.33	Get Quote
Maritex	SI4435DYTRPBF		1		1	1 $1.04 10 $0.78 100 $0.55 1000 $0.42 10000 $0.42	Buy Now
Win Source Electronics	SI4435DYTRPBF		18,700			1 - 10 - 100 $0.94 1000 $0.63 10000 $0.63	Buy Now
Infineon Technologies AG SI4435DY MOSFET P-CH 30V 8A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4435DY	Tube			95	1 - 10 - 100 $1.38 1000 $1.38 10000 $1.38	Buy Now
ComSIT USA	SI4435DY		1,355			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Infineon Technologies AG SI4435DYTR MOSFET P-CH 30V 8A 8SO
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SI4435DYTR	Tape & Reel			4,000	1 - 10 - 100 - 1000 - 10000 $0.94	Buy Now

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SI4435DY Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
7w66 Abstract: Si4435DY D665 Contextual Info: Si4435DY P-Channel Logic Level PowerTrenchTM MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching	Original	Si4435DY 7w66 D665	PDF
Si64 Abstract: 51361 Si4435DY Si4953DY Si6435DQ Si9435DY Si94 Contextual Info: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S	Original	Si9435DY Si4435DY Si4953DY Si6435DQ S-51361--Rev. 18-Dec-96 Si64 51361 Si94	PDF
Si4435DY Contextual Info: Si4435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V "8.0 0.035 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	Si4435DY S-47958--Rev. 15-Apr-96	PDF
Si4435DY Contextual Info: Si4435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V "8.0 0.035 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	Si4435DY S-47958--Rev. 15-Apr-96	PDF
SI4435DY Abstract: AN609 74549N Contextual Info: Si4435DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	Si4435DY AN609 31-Aug-05 74549N	PDF
S-49534 Abstract: Si4435DY Contextual Info: Si4435DY P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V "8.0 0.035 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	Si4435DY S-49534--Rev. 06-Oct-97 S-49534	PDF
IRF7101 Abstract: Si4435DYPbF Contextual Info: PD- 95133 Si4435DYPbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free A D 1 8 2 7 D S 3 6 D G 4 5 D S S VDSS = -30V RDS on = 0.020Ω Top View Description These P-channel HEXFET® Power MOSFETs from	Original	Si4435DYPbF EIA-481 EIA-541. IRF7101	PDF
S-49534 Abstract: Si4435DY Contextual Info: Si4435DY P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) (W) ID (A) 0.02 @ VGS = –10 V "8.0 0.035 @ VGS = –4.5 V "6.0 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	Si4435DY S-49534--Rev. 06-Oct-97 S-49534	PDF
Si4435DY Abstract: Si4953DY Si6435DQ Si9430DY Contextual Info: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S	Original	Si9430DY Si4435DY Si4953DY Si6435DQ S-51360--Rev. 18-Dec-96	PDF
Si4435DY Abstract: Si4953DY Si6435DQ Si9435DY Contextual Info: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ	Original	Si9435DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96	PDF
Si9430DY Abstract: Si4435DY Si4953DY Si6435DQ Contextual Info: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ	Original	Si9430DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96	PDF
Si4435DY Abstract: Si4953DY Si6435DQ Si9435DY Contextual Info: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ	Original	Si9435DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96	PDF
Si4435DY Abstract: Si4953DY Si6435DQ Si9430DY Contextual Info: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S	Original	Si9430DY Si4435DY Si4953DY Si6435DQ S-51360--Rev. 18-Dec-96	PDF
Si4435DY Abstract: si4435 Contextual Info: SI4435DY 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive	Original	SI4435DY Si4435DY si4435	PDF

7w66 Contextual Info: Si4435DY* P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching	Original	Si4435DY 7w66	PDF
Si4435DY Contextual Info: Si4435DY Siliconix PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -30 rDS(on) (W) ID (A) 0.02 @ VGS = -10 V "8.0 0.035 @ VGS = -4.5 V "6.0 S S S SOĆ8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D Top View G D D D D PĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)	Original	Si4435DY S45252Rev.	PDF
Si4435DY Abstract: Si4953DY Si6435DQ Si9435DY 70513 51361 Contextual Info: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S	Original	Si9435DY Si4435DY Si4953DY Si6435DQ S-51361--Rev. 18-Dec-96 70513 51361	PDF
Si4435DY Abstract: a2019 Contextual Info: SPICE Device Model Si4435DY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	Si4435DY S-51095Rev. 13-Jun-05 a2019	PDF
Contextual Info: PD- 95133 Si4435DYPbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free A D 1 8 2 7 D S 3 6 D G 4 5 D S S VDSS = -30V RDS on = 0.020Ω Top View Description These P-channel HEXFET® Power MOSFETs from	Original	Si4435DYPbF EIA-481 EIA-541.	PDF
IRF7101 Abstract: Si4435DYPbF Contextual Info: PD- 95133 Si4435DYPbF HEXFET Power MOSFET l l l l l Ultra Low On-Resistance P-Channel MOSFET Surface Mount Available in Tape & Reel Lead-Free A D 1 8 2 7 D S 3 6 D G 4 5 D S S VDSS = -30V RDS on = 0.020Ω Top View Description These P-channel HEXFET® Power MOSFETs from	Original	Si4435DYPbF EIA-481 EIA-541. IRF7101	PDF
Si9430DY Abstract: Si4435DY Si4953DY Si6435DQ SI9430DY equivalent Contextual Info: Si9430DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = –10 V "5.8 0.065 @ VGS = –6 V "4.9 0.090 @ VGS = –4.5 V "4.0 –20 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size—see LITE FOOTR equivalent: Si6435DQ	Original	Si9430DY Si4435DY Si4953DY Si6435DQ S-47958--Rev. 15-Apr-96 SI9430DY equivalent	PDF
Contextual Info: SI4435DY 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gave drive	Original	SI4435DY	PDF
Si4435BDY-E3 Abstract: Si4435BDY si4435dy SI4435DY-T1 Si4435BDY-T1 Si4435BDY-T1-E3 Si4435DY-REVA SI4435DY-T1-REVA Contextual Info: Specification Comparison Vishay Siliconix Si4435BDY vs. Si4435DY-REVA Description: P-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si4435BDY Replaces Si4435DY-REVA Si4435BDY-E3 (Lead (Pb)-free version) Replaces Si4435DY-REVA	Original	Si4435BDY Si4435DY-REVA Si4435BDY-E3 Si4435BDY-T1 Si4435DY-T1-REVA Si4435BDY-T1-E3 si4435dy SI4435DY-T1	PDF
4435 mosfet Contextual Info: MOSFET SMD Type P-Channel MOSFET SI4435DY SOP-8 • Features ● VDS=-30V ● RDS on =0.02Ω@VGS=-10V ● RDS(on)=0.035Ω@VGS=-4.5V S G S 1 8 D S 2 7 D S 3 6 D G 4 5 D D Top View ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage	Original	SI4435DY 00A/us 4435 mosfet	PDF

SI4435DY Search Results

SI4435DY Datasheets (15)

SI4435DY Price and Stock

onsemi SI4435DY

UMW SI4435DY

Infineon Technologies AG SI4435DYTRPBF

Infineon Technologies AG SI4435DY

Infineon Technologies AG SI4435DYTR

SI4435DY Datasheets Context Search

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Si64

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S-49534

IRF7101

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Si4435DY

Si4435DY

Si4435DY

7w66

Si4435DY

Si4435DY

Si4435DY

IRF7101

Si9430DY

Si4435BDY-E3

4435 mosfet