SI94 Search Results

Si9407AEY

Contextual Info: Si9407AEY Vishay Siliconix P-Channel 60-V D-S , 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 60 ID (A) 0.120 at VGS = - 10 V ± 3.5 0.15 at VGS = - 4.5 V ± 3.1 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs

8D-13

Contextual Info: _ Si9422DY Vishay Siliconix N-Channel Reduced Qg, Fast Switching MOSFET New Product VostV Rds ON) <ß) Id (A) 200 0 .420 @ V GS = 10 V ± 1 .7 D O S O -8 d: 13 0 Œ Œ CZ ID 0 XI D Z3 0 <J| Top View N-Channel MOSFET RATIN G S

Si9436DY

Contextual Info: Si9436DY New Product Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.040 @ VGS = 10 V 6.8 0.060 @ VGS = 4.5 V 5.6 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si9410BDY

Abstract: Si9410BDY-T1-E3
Contextual Info: Si9410BDY Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.024 at VGS = 10 V 8.1 0.033 at VGS = 4.5 V 6.9 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs • Compliant to RoHS Directive 2002/95/EC

Si9407BDY-T1-GE3

Abstract: Si9407BDY Si9407BDY-T1-E3
Contextual Info: New Product Si9407BDY Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) ID (A)a RDS(on) (Ω) - 60 0.120 at VGS = - 10 V - 4.7 0.150 at VGS = - 4.5 V - 4.2 Qg (Typ.) 8 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET

8 pin ic 9435

Abstract: 9435, ic 9435 fairchild 9435 so8 ic 9435 marking 9435 9435 GM st 9435, ic ST 9435 MOSFET code 9435
Contextual Info: Si9435DY P-Channel Logic Level PowerTrench MOSFET General Description Features This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain

Si9424BDY-E3

Abstract: Si9424BDY-T1 Si9424DY-T1 Si9424BDY-T1-E3 Si9424BDY Si9424DY
Contextual Info: Specification Comparison Vishay Siliconix Si9424BDY vs. Si9424DY Description: P-Channel, 2.5 V G-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si9424BDY Replaces Si9424DY Si9424BDY-E3 (Lead (Pb)-free version) Replaces Si9424DY Si9424BDY-T1 Replaces Si9424DY-T1

SI9435BDY-E3

Abstract: Si9435BDY Si9435DY Si9435BDY-T1 Si9435BDY-T1-E3 Si9435DY-T1
Contextual Info: Specification Comparison Vishay Siliconix Si9435BDY vs. Si9435DY Description: P-Channel, 30 V D-S MOSFET Package: SOIC-8 Pin Out: Identical Part Number Replacements: Si9435BDY Replaces Si9435DY Si9435BDY-E3 (Lead (Pb)-free version) Replaces Si9435DY Si9435BDY-T1 Replaces Si9435DY-T1

SI9434BDY-T1-E3

Abstract: Si9434BDY-T1 Si9434BDY
Contextual Info: Si9434BDY New Product Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) −20 20 rDS(on) (W) ID (A) 0.040 @ VGS = −4.5 V −6.3 0.055 @ VGS = −2.5 V −5.1 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D Ordering Information: Si9434BDY—E3 (Lead (Pb)-Free)

Si9424BDY-T1-E3

Abstract: Si9424BDY Si9424BDY-T1
Contextual Info: Si9424BDY Vishay Siliconix New Product P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.025 at VGS = - 4.5 V - 7.1 0.033 at VGS = - 2.5 V - 6.1 • TrenchFET Power MOSFET Pb-free Available RoHS* COMPLIANT S SO-8 S 1

Si9434BDY

Contextual Info: SPICE Device Model Si9434BDY Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si9422DY

Abstract: NC012
Contextual Info: SPICE Device Model Si9422DY N-Channel Reduced Qg, Fast Switching MOSFET Characteristics • N-channel Vertical DMOS • Macro-Model Subcircuit • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range

Si9424DY

Contextual Info: Si9424DY Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.025 @ VGS = –4.5 V "7.7 0.033 @ VGS = –2.5 V "6.6 S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si9400DY

Contextual Info: Si9400DY Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.25 @ VGS = –10 V "2.5 0.40 @ VGS = –4.5 V "2.0 S S SO-8 NC 8 D 2 7 D S 3 6 D G 4 5 D S 1 G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Si9430DY

Contextual Info: Si9430DY Siliconix PĆChannel EnhancementĆMode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.050 @ VGS = -10 V "5.8 0.065 @ VGS = -6 V "4.9 0.090 @ VGS = -4.5 V "4.0 -20 S S S SOĆ8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D Top View G D D D D PĆChannel MOSFET

Si9410DY

Contextual Info: Si9410DY Siliconix NĆChannel EnhancementĆMode MOSFET Product Summary VDS V rDS(on) (W) ID (A) 0.030 @ VGS = 10 V "7.0 0.040 @ VGS = 5 V "6.0 0.050 @ VGS = 4.5 V "5.4 30 D D D D SOĆ8 N/C 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S S NĆChannel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

Si9424DY

Abstract: Si9434DY
Contextual Info: Si9434DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –12 rDS(on) (W) ID (A) 0.040 @ VGS = –4.5 V "6.4 0.060 @ VGS = –2.5 V "5.1 Recommended upgrade: Si9424DY S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET

Si9426DY

Contextual Info: Si9426DY N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.0135 @ VGS = 4.5 V "10 0.0160 @ VGS = 2.5 V "9.3 D SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View S N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)

Contextual Info: Tem ic Si9426DY Semiconductors N-Channel 2.5-V G-S Rated MOSFET Product Summary VDS(V) 20 r DS(on) (£2) I d (A) 0.0135 @ VGs = 4.5 V ±10 0.0160 @ VGs = 2.5 V ±9.3 i D Q SO-8 6 s N-Channel MOSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)

Si9433DY

Contextual Info: Si9433DY Vishay Siliconix P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) –20 rDS(on) (W) ID (A) 0.045 @ VGS = –4.5 V "5.4 0.070 @ VGS = –2.7 V "4.2 S S S SO-8 S 1 8 D S 2 7 D S 3 6 D G 4 5 D G Top View D D D D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Contextual Info: Si9433BDY Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 20 ID (A) 0.040 at VGS = - 4.5 V - 6.2 0.060 at VGS = - 2.7 V - 5.0 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC

Power MOSFET, Fairchild

Abstract: Si9410DY
Contextual Info: Si9410DY* Single N-Channel Enhancement Mode MOSFET General Description Features This N-Channel Enhancement Mode MOSFET is produced using Fairchild Semiconductor's advance process that has been especially tailored to minimize on-state resistance and yet maintain superior switching

AN609

Abstract: Si9424BDY
Contextual Info: Si9424BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

133532

Abstract: AN609 Si9410BDY
Contextual Info: Si9410BDY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].