SI64 Search Results

Si6463BDQ

Contextual Info: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT

72511

Abstract: Si6433BDQ
Contextual Info: Si6433BDQ Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 RDS(on) (Ω) ID (A) 0.040 at VGS = - 4.5 V - 4.8 0.070 at VGS = - 2.5 V - 3.6 • Halogen-free RoHS COMPLIANT S* TSSOP-8 D 1 S 2 S 3 G 4 G 8 D 7 S * Source Pins 2, 3, 6 and 7

Si6463BDQ

Contextual Info: Si6463BDQ Vishay Siliconix P-Channel 1.8 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) () ID (A) 0.015 at VGS = - 4.5 V - 7.4 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free According to IEC 61249-2-21 Definition

Contextual Info: Si6475DQ Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.011 at VGS = - 4.5 V - 10 - 12 0.0135 at VGS = - 2.5 V -9 0.017 at VGS = - 1.8 V -8 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT S*

Contextual Info: Si6441DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.015 at VGS = - 10 V -8 0.024 at VGS = - 4.5 V - 6.4 • Halogen-free • TrenchFET Power MOSFET RoHS APPLICATIONS COMPLIANT • Battery Switch

Si6435ADQ

Contextual Info: SPICE Device Model Si6435ADQ Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range

Si6423DQ

Abstract: Si6423DQ-T1
Contextual Info: Si6423DQ New Product Vishay Siliconix P-Channel 12-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.0085 @ VGS = - 4.5 V - 9.5 0.0106 @ VGS = - 2.5 V - 8.5 0.014 @ VGS = - 1.8 V - 7.5 APPLICATIONS D Load Switch

Si6466ADQ

Abstract: S-00984
Contextual Info: Si6466ADQ New Product Vishay Siliconix N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.014 @ VGS = 4.5 V 8.1 0.020 @ VGS = 2.5 V 6.6 D TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6466ADQ * Source Pins 2, 3, 6 and 7 must be tied common.

Si6475DQ

Contextual Info: Si6475DQ New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.011 @ VGS = –4.5 V –10 –12 12 0.0135 @ VGS = –2.5 V –9 0.017 @ VGS = –1.8 V –8 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6475DQ

Si6435DQ

Abstract: 2502P CBHK741B019 F63TNR FDW2502P
Contextual Info: Si6435DQ 30V P-Channel PowerTrench MOSFET General Description Features This P-Channel MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications requiring a wide range of gate drive voltage

MOSFET TSSOP-8

Abstract: SI6410DQ
Contextual Info: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D

S-49534

Abstract: Si6435DQ
Contextual Info: Si6435DQ P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 30 rDS(on) (W) ID (A) 0.040 @ VGS = –10 V "4.5 0.070 @ VGS = –4.5 V "3.4 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6435DQ D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View

Si64

Abstract: 51361 Si4435DY Si4953DY Si6435DQ Si9435DY Si94
Contextual Info: Si9435DY P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.055 @ VGS = –10 V "5.1 0.07 @ VGS = –6 V "4.6 0.105 @ VGS = –4.5 V "3.6 Recommended upgrade: Si4435DY or Si4953DY Lower profile/smaller size see Si6435DQ S S S

Si6447DQ

Contextual Info: Si6447DQ Siliconix PĆChannel EnhancementĆMode MOSFET Product Summary VDS V -20 rDS(on) (W) ID (A) 0.09 @ VGS = -10 V "3.2 0.16 @ VGS = -4.5 V "2.4 S* TSSOPĆ8 D S S G 1 2 D 3 8 Si6447DQ 4 7 6 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common.

Si6447DQ

Contextual Info: Si6447DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.09 @ VGS = –10 V "3.2 0.16 @ VGS = –4.5 V "2.4 S* TSSOP-8 D S S G 1 D 2 8 7 Si6447DQ 3 6 4 5 D S S D G *Source Pins 2, 3, 6 and 7 must be tied common. Top View

Si6459DQ

Contextual Info: Si6459DQ P-Channel Enhancement-Mode MOSFET Product Summary VDS V –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "2.6 0.150 @ VGS = –4.5 V "2.4 S* TSSOP-8 D S S G 1 2 3 4 D 8 7 6 5 Si6459DQ G D S S D *Source Pins 2, 3, 6 and 7 must be tied common. Top View

si6465

Contextual Info: Si6465DQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.012 at VGS = - 4.5 V ± 8.8 -8 0.017 at VGS = - 2.5 V ± 7.4 0.025 at VGS = - 1.8 V ± 6.0 • Halogen-free • TrenchFET Power MOSFETs: 1.8 V Rated

Contextual Info: Tem ic Si6434DQ Semiconductors N-Channel 30-V D-S Rated MOSFET Product Summary V DS(V) 30 r DS(on) (£2) I d (A) 0.028 @ VGs = 10 V ±5.6 0.042 @VGs = 4.5 V ±4.5 D O TSSOP-8 D S S D Si6434DQ *Source Pins 2, 3, 6 and 7 must be tied common. Top View 6 s*

Si6463ADQ

Abstract: Si6463ADQ-T1 Si6463BDQ
Contextual Info: Specification Comparison Vishay Siliconix Si6463BDQ vs. Si6463ADQ Description: P-Channel, 1.8 V G-S MOSFET Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6463BDQ-T1 Replaces Si6463ADQ-T1 Si6463BDQ-T1-E3 (Lead (Pb)-free version) Replaces Si6463ADQ-T1

Si6410DQ

Contextual Info: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.014 @ VGS = 10 V "7.8 0.021 @ VGS = 4.5 V "6.3 D TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6410DQ * Source Pins 2, 3, 6 and 7 must be tied common. G Top View

Si6459DQ

Contextual Info: Si6459DQ Vishay Siliconix P-Channel 60-V D-S MOSFET PRODUCT SUMMARY VDS (V) –60 rDS(on) (W) ID (A) 0.120 @ VGS = –10 V "2.6 0.150 @ VGS = –4.5 V "2.4 S* TSSOP-8 8 D 7 S 3 6 S 4 5 D D 1 S 2 S G D Si6459DQ G * Source Pins 2, 3, 6 and 7 must be tied common.

Contextual Info: Si6415DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.019 at VGS = - 10 V ± 6.5 0.030 at VGS = - 4.5 V ± 5.2 • Halogen-free • TrenchFET Power MOSFETs Pb-free Available RoHS* COMPLIANT S* TSSOP-8

Contextual Info: Si6443DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.012 at VGS = - 10 V - 8.8 0.019 at VGS = - 4.5 V - 7.0 • Halogen-free • TrenchFET Power MOSFET RoHS COMPLIANT APPLICATIONS • Battery Switch

SI6410DQ

Contextual Info: Si6410DQ Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 30 ID (A) 0.014 at VGS = 10 V ± 7.8 0.021 at VGS = 4.5 V ± 6.3 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT D TSSOP-8 8 D 7 S 3 6 S 4 5 D