Part Number
    Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    SI6441DQ Search Results

    SI6441DQ Datasheets (3)

    Select Manufacturer
    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    SI6441DQ
    Vishay Siliconix MOSFETs Original PDF 39.78KB 5
    Si6441DQ SPICE Device Model
    Vishay P-Channel 30-V (D-S) MOSFET Original PDF 178.81KB 3
    Si6441DQ-T1
    Vishay Siliconix P-Channel 30-V (D-S) MOSFET Original PDF 39.78KB 5
    SF Impression Pixel

    SI6441DQ Price and Stock

    Vishay Intertechnologies

    Vishay Intertechnologies SI6441DQ-T1-E3

    MOSFETs 30V 8.0A 1.08W
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SI6441DQ-T1-E3
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.37
    Get Quote

    Vishay Intertechnologies SI6441DQ-T1-GE3

    MOSFETs 30V 8.0A 1.75W 15mohm @ 10V
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics SI6441DQ-T1-GE3
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $1.37
    Get Quote

    SI6441DQ Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Si6441DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.015 at VGS = - 10 V -8 0.024 at VGS = - 4.5 V - 6.4 • Halogen-free • TrenchFET Power MOSFET RoHS APPLICATIONS COMPLIANT • Battery Switch


    Original
    si6441dqsi6441dq-t1-ge32002/95/ec2011/65/eu+2js709a02-oct-12 PDF

    Si6441DQ

    Contextual Info: SPICE Device Model Si6441DQ Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    si6441dq0-to-10v16-may-03 PDF

    A1818

    Contextual Info: Si6441DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.015 at VGS = - 10 V -8 0.024 at VGS = - 4.5 V - 6.4 • Halogen-free • TrenchFET Power MOSFET RoHS APPLICATIONS COMPLIANT • Battery Switch


    Original
    si6441dqsi6441dq-t1-ge32011/65/eu2002/95/ec+212-mar-12a1818 PDF

    Si6441DQ

    Contextual Info: SPICE Device Model Si6441DQ Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    si6441dqs-52526rev12-dec-05 PDF

    Si6441DQ

    Contextual Info: Si6441DQ Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 30 ID (A) 0.015 at VGS = - 10 V -8 0.024 at VGS = - 4.5 V - 6.4 • Halogen-free • TrenchFET Power MOSFET RoHS APPLICATIONS COMPLIANT • Battery Switch


    Original
    si6441dqsi6441dq-t1-ge318-jul-08 PDF

    Contextual Info: Si6441DQ New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.015 @ VGS = - 10 V -8 0.024 @ VGS = - 4.5 V - 6.4 APPLICATIONS D Battery Switch D Load Switch S* TSSOP-8


    Original
    si6441dqsi6441dq-t108-apr-05 PDF

    Si6441DQ

    Abstract: Si6441DQ-T1
    Contextual Info: Si6441DQ New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES D TrenchFETr Power MOSFET PRODUCT SUMMARY VDS (V) - 30 rDS(on) (W) ID (A) 0.015 @ VGS = - 10 V -8 0.024 @ VGS = - 4.5 V - 6.4 APPLICATIONS D Battery Switch D Load Switch S* TSSOP-8


    Original
    si6441dqsi6441dq-t1s-03984--rev19-may-03 PDF

    Si6441DQ

    Contextual Info: SPICE Device Model Si6441DQ Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    si6441dq18-jul-08 PDF

    Siliconix

    Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
    Contextual Info: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123


    Original
    2n70002n70022n7002e2n7002k+152sj5742sk3240bs170bsh108bss123bss138siliconixsiliconix mosfet guidesiliconix vn10kmpower mosfet cross reference guidefdc6323lfdn5618p2n7002 siliconixequivalent of bs170vn10km equivalent PDF

    Siliconix mosfet guide

    Abstract: Si9371 power selector guide Si8901EDB Si6875DQ nimh spice model charge SI8901 vishay resistances guide Si4927DY Si6866BDQ
    Contextual Info: Power MOSFETs for Battery Pack Applications Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original
    si9731tssop-16si9371siliconix mosfet guide+8power selector guidesi8901edbsi6875dqnimh spice model chargesi8901vishay resistances guidesi4927dysi6866bdq PDF

    GS 069

    Abstract: Si5902DC SPICE Device Model tsop6 marking 312 sC89-6 Si7705DN SI7100DN Si3865BDV Si5947DU Si3861BDV 1212-8
    Contextual Info: Power MOSfETs for Portable applications Selector guide vishay Siliconix 2201 Laurelwood road P.o. Box 54951 santa clara, cA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no


    Original
    si9165si9169600-matssop-20+12msop-10sip1759gs 069si5902dc spice device modeltsop6 marking 312sc89-6si7705dnsi7100dnsi3865bdvsi5947dusi3861bdv1212-8 PDF

    si5480

    Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
    Contextual Info: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT


    Original
    si6463bdqsi6459bdq-t1-ge3si5944du-t1-e3si5944du-t1-ge3+15si5945du-t1-e3si5945du-t1-ge3si5947du-t1-e3si5947du-t1-ge3ppaksc75si5480sia913dj-t1-ge3sia513dj-t1-e3si6404dq-t1sia411dj-t1-e3sib414dk-t1-e3si6913dq-t1-e3sia513dj-t1-ge3si6925adq-t1-e3si6981dq-t1-ge3 PDF