SI6874EDQ Search Results

Si6874EDQ

Contextual Info: Si6874EDQ Vishay Siliconix Dual N-Channel 20-V D-S MOSFET, Common Drain FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.026 @ VGS = 4.5 V 6.5 0.031 @ VGS = 2.5 V 5.8 0.039 @ VGS = 1.8 V 5.0 D 3000-V ESD Protection D Lead (Pb)-Free Version is RoHS

AN609

Abstract: Si6874EDQ 40375
Contextual Info: Si6874EDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si6874EDQ

Abstract: 71252
Contextual Info: Si6874EDQ New Product Vishay Siliconix Dual N-Channel 20-V D-S MOSFET, Common Drain PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.026 @ VGS = 4.5 V 6.5 0.031 @ VGS = 2.5 V 5.8 0.039 @ VGS = 1.8 V 5.0 D D TSSOP-8 D 8 D 7 D 3 6 D 4 5 D S1 1 G1 2 S2 G2 Si6874EDQ

Si6874EDQ

Contextual Info: Si6874EDQ Vishay Siliconix Dual N-Channel 20-V D-S MOSFET, Common Drain FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.026 @ VGS = 4.5 V 6.5 0.031 @ VGS = 2.5 V 5.8 0.039 @ VGS = 1.8 V 5.0 D 3000-V ESD Protection D Lead (Pb)-Free Version is RoHS

Contextual Info: Si6874EDQ Vishay Siliconix Dual N-Channel 20-V D-S MOSFET, Common Drain FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.026 @ VGS = 4.5 V 6.5 0.031 @ VGS = 2.5 V 5.8 0.039 @ VGS = 1.8 V 5.0 D 3000-V ESD Protection D Lead (Pb)-Free Version is RoHS

Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Contextual Info: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123

Siliconix mosfet guide

Abstract: Si9371 power selector guide Si8901EDB Si6875DQ nimh spice model charge SI8901 vishay resistances guide Si4927DY Si6866BDQ
Contextual Info: Power MOSFETs for Battery Pack Applications Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no

PowerPAK 1212 die

Abstract: PowerPAK 1212-8 AN822 Si6874EDQ Si7900EDN
Contextual Info: Copyright 2004 IEEE. Reprinted from the proceedings of the 52nd Electronic Components and Technology Conference ECTC , May 27-30, 2002, New Orleans, Louisiana. This material is posted here with permission of the IEEE. Such permission of the IEEE does not in any way imply IEEE endorsement of any of Vishay Intertechnology, Inc.'s products or

si5480

Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
Contextual Info: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT