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SI6866BDQ Datasheets (2)

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Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
SI6866BDQ		Vishay Siliconix	MOSFETs	Original	PDF	66.39KB	5
Si6866BDQ SPICE Device Model		Vishay	Dual N-Channel 2.5-V (G-S) MOSFET	Original	PDF	201.93KB	3

SI6866BDQ Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
4835 Abstract: AN609 Si6866BDQ 1.4835 74042 Contextual Info: Si6866BDQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].	Original	si6866bdq an609 02-jul-07 4835 +21.4835 74042	PDF
72703 Abstract: Si6866BDQ Contextual Info: SPICE Device Model Si6866BDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Model Subcircuit) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si6866bdq 06-dec-03 72703	PDF
T1 diode Abstract: Si6866BDQ Si6866DQ Si6866DQ-T1 Contextual Info: Specification Comparison Vishay Siliconix Si6866BDQ vs. Si6866DQ Description: Dual N-Channel, 2.5 V G-S MOSFET Package: TSSOP-8 Pin Out: Identical Part Number Replacements: Si6866BDQ-T1 Replaces Si6866DQ-T1 Si6866BDQ-T1-E3 (Lead (Pb)-free version) Replaces Si6866DQ-T1	Original	si6866bdq si6866dq si6866bdq-t1 si6866dq-t1 +3si6866bdq-t1-e3 09-nov-06 t1 diode	PDF
Si6866BDQ Contextual Info: Si6866BDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0275 @ VGS = 4.5 V 6 0.040 @ VGS = 2.5 V 4.9 D Lead (Pb)-Free Version is RoHS Compliant D1 Available D2 TSSOP-8 S1 1 G1 2 S2 3 G2 4 8 D 7 D	Original	si6866bdq si6866bdq-t1 si6866bdq-t1--e3 s-50695--rev +118-apr-05	PDF
Si6866BDQ Contextual Info: Si6866BDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0275 @ VGS = 4.5 V 6 0.040 @ VGS = 2.5 V 4.9 D Lead (Pb)-Free Version is RoHS Compliant D1 Available D2 TSSOP-8 S1 1 G1 2 S2 3 G2 4 8 D 7 D	Original	si6866bdq si6866bdq-t1 si6866bdq-t1--e3 08-apr-05	PDF
Si6866BDQ Abstract: 72703 Contextual Info: SPICE Device Model Si6866BDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si6866bdq 18-jul-08 72703	PDF
Si6866BDQ Contextual Info: Si6866BDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (W) ID (A) 0.0275 @ VGS = 4.5 V 6 0.040 @ VGS = 2.5 V 4.9 D Lead (Pb)-Free Version is RoHS Compliant D1 Available D2 TSSOP-8 S1 1 G1 2 S2 3 G2 4 8 D 7 D	Original	si6866bdq si6866bdq-t1 si6866bdq-t1--e3 18-jul-08	PDF
Si6866BDQ Contextual Info: Si6866BDQ Vishay Siliconix New Product Dual N-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) 20 ID (A) 0.0275 @ VGS = 4.5 V 6 0.040 @ VGS = 2.5 V 4.9 D D TSSOP-8 S1 1 G1 2 S2 3 G2 4 8 D 7 D D G1 6 D 5 D G2 Top View S1 S2 N-Channel MOSFET N-Channel MOSFET	Original	si6866bdq si6866bdq-t1 s-32675--rev 29-dec-03	PDF
72703 Abstract: Si6866BDQ mosfet Vds 30 Vgs 25 Contextual Info: SPICE Device Model Si6866BDQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range	Original	si6866bdq s-60146rev 13-feb-06 72703 +1mosfet vds 30 vgs 25	PDF
Siliconix mosfet guide Abstract: Si9371 power selector guide Si8901EDB Si6875DQ nimh spice model charge SI8901 vishay resistances guide Si4927DY Si6866BDQ Contextual Info: Power MOSFETs for Battery Pack Applications Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no	Original	si9731 tssop-16 si9371 siliconix mosfet guide +8power selector guide si8901edb si6875dq nimh spice model charge si8901 vishay resistances guide si4927dy si6866bdq	PDF
si5480 Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3 Contextual Info: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT	Original	si6463bdq si6459bdq-t1-ge3 si5944du-t1-e3 si5944du-t1-ge3 +15si5945du-t1-e3 si5945du-t1-ge3 si5947du-t1-e3 si5947du-t1-ge3 ppaksc75 si5480 sia913dj-t1-ge3 sia513dj-t1-e3 si6404dq-t1 sia411dj-t1-e3 sib414dk-t1-e3 si6913dq-t1-e3 sia513dj-t1-ge3 si6925adq-t1-e3 si6981dq-t1-ge3	PDF