SI6875DQ Search Results

Si6875DQ

Abstract: Si6875DQ-T1
Contextual Info: New Product Si6875DQ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET, Common Drain FEATURES PRODUCT SUMMARY VDS (V) - 20 • TrenchFET Power MOSFETs: 1.8 V Rated rDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V - 6.4 0.036 at VGS = - 2.5 V - 5.5 RoHS* 0.052 at VGS = - 1.8 V

3773 P

Abstract: 5252 AN609 Si6875DQ
Contextual Info: Si6875DQ_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].

Si6875DQ

Contextual Info: Si6875DQ New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET, Common Drain PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.027 @ VGS = –4.5 V –6.4 0.036 @ VGS = –2.5 V –5.5 0.052 @ VGS = –1.8 V –4.6 S1 S2 TSSOP-8 D1 1 S1 2 S1 3

Contextual Info: Si6875DQ New Product Vishay Siliconix Dual P-Channel 20-V D-S MOSFET, Common Drain PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.027 @ VGS = –4.5 V –6.4 0.036 @ VGS = –2.5 V –5.5 0.052 @ VGS = –1.8 V –4.6 S1 S2 TSSOP-8 D1 1 S1 2 S1 3

Contextual Info: New Product Si6875DQ Vishay Siliconix Dual P-Channel 20-V D-S MOSFET, Common Drain FEATURES PRODUCT SUMMARY VDS (V) - 20 • TrenchFET Power MOSFETs: 1.8 V Rated rDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V - 6.4 0.036 at VGS = - 2.5 V - 5.5 RoHS* 0.052 at VGS = - 1.8 V

VN10KLS

Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated

Siliconix

Abstract: Siliconix mosfet guide siliconix VN10KM Power MOSFET Cross Reference Guide FDC6323L fdn5618p 2n7002 siliconix BS170 equivalent of BS170 VN10KM equivalent
Contextual Info: Analog Discrete Interface & Logic Optoelectronics MOSFET Small Package Cross Reference 2003 Across the board. Around the world. MOSFET Small Package Cross Reference Guide Competitor Part Number 2N7000 2N7002 2N7002E 2N7002K 2SJ574 2SK3240 BS170 BSH108 BSS123

Siliconix mosfet guide

Abstract: Si9371 power selector guide Si8901EDB Si6875DQ nimh spice model charge SI8901 vishay resistances guide Si4927DY Si6866BDQ
Contextual Info: Power MOSFETs for Battery Pack Applications Selector Guide Vishay Siliconix 2201 Laurelwood Road P.O. Box 54951 Santa Clara, CA 95056 Phone: +1 408 988 8000 Fax: +1 408 567 8950 www.vishay.com NOTICE specifications of the products displayed herein are subject to change without notice. Vishay intertechnology, inc., or anyone on its behalf, assumes no

si5480

Abstract: SiA913DJ-T1-GE3 SIA513DJ-T1-E3 SI6404DQ-T1 SIA411DJ-T1-E3 SIB414DK-T1-E3 SI6913DQ-T1-E3 SIA513DJ-T1-GE3 SI6925ADQ-T1-E3 SI6981DQ-T1-GE3
Contextual Info: Si6463BDQ Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.015 at VGS = - 4.5 V - 7.4 - 20 0.020 at VGS = - 2.5 V - 6.3 0.027 at VGS = - 1.8 V - 5.5 • Halogen-free • TrenchFET Power MOSFETs RoHS COMPLIANT