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    SI4967DY Search Results

    SI4967DY Datasheets (9)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    Si4967DY
    Unknown Metal oxide P-channel FET, Enhancement Type Original PDF 59.93KB 4
    Si4967DY
    Toshiba Power MOSFETs Cross Reference Guide Original PDF 165.78KB 67
    Si4967DY
    Vishay Intertechnology Dual P-Channel 1.8-V (G-S) MOSFET Original PDF 67.68KB 4
    SI4967DY-DS
    Vishay Telefunken DS-Spice Model for Si4967DY Original PDF 225.89KB 3
    Si4967DY SPICE Device Model
    Vishay Dual P-Channel 1.8-V (G-S) MOSFET Original PDF 225.89KB 3
    SI4967DY-T1
    Vishay Intertechnology Dual P-Channel 1.8-V (G-S) MOSFET Original PDF 67.68KB 4
    SI4967DY-T1
    Vishay Siliconix Dual P-Channel 1.8-V (G-S) MOSFET Original PDF 59.93KB 4
    SI4967DY-T1-E3
    Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 12V 8SOIC Original PDF 8
    SI4967DY-T1-GE3
    Vishay Siliconix FETs - Arrays, Discrete Semiconductor Products, MOSFET 2P-CH 12V 8SOIC Original PDF 8
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    SI4967DY Price and Stock

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    Vishay Siliconix SI4967DY-T1

    Trans MOSFET P-CH 12V 7.5A 8-Pin SOIC N T/R
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    Bristol Electronics SI4967DY-T1 2,214
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    Quest Components () SI4967DY-T1 1,771
    • 1 $2.92
    • 10 $2.92
    • 100 $2.92
    • 1000 $1.09
    • 10000 $1.09
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    SI4967DY-T1 1,651
    • 1 $1.82
    • 10 $1.82
    • 100 $1.82
    • 1000 $0.84
    • 10000 $0.77
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    Vishay Intertechnologies SI4967DY-T1-E3

    Trans MOSFET P-CH 12V 7.5A 8-Pin SOIC N T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics SI4967DY-T1-E3 1,568 1
    • 1 $0.75
    • 10 $0.75
    • 100 $0.28
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    Quest Components () SI4967DY-T1-E3 1,254
    • 1 $1.20
    • 10 $1.20
    • 100 $0.60
    • 1000 $0.48
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    SI4967DY-T1-E3 1,254
    • 1 $1.00
    • 10 $1.00
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    • 1000 $0.26
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    Vishay Siliconix SI4967DY

    POWER FIELD-EFFECT TRANSISTOR, 7.5A I(D), 12V, 0.023OHM, 2-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SI4967DY 60
    • 1 $1.88
    • 10 $1.88
    • 100 $1.13
    • 1000 $1.13
    • 10000 $1.13
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    Vishay Intertechnologies SI4967DYT1E3

    DUAL P-CHANNEL 1.8-V (G-S) MOSFET Power Field-Effect Transistor, 7.5A I(D), 12V, 0.023ohm, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SI4967DYT1E3 160
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    SI4967DY Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.023 at VGS = - 4.5 V - 7.5 - 12 0.030 at VGS = - 2.5 V - 6.7 0.045 at VGS = - 1.8 V - 5.4 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    si4967dy2002/95/ecsi4967dy-t1-e3si4967dy-t1-ge3+32011/65/eujs709a02-oct-12 PDF

    Si4967DY

    Abstract: 5A6V
    Contextual Info: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.023 @ VGS = –4.5 V "7.5 0.030 @ VGS = –2.5 V "6.7 0.045 @ VGS = –1.8 V "5.4 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View


    Original
    si4967dys-59633--rev12-oct-985a6v PDF

    Si4967DY

    Abstract: Si4967DY-T1-E3
    Contextual Info: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.023 at VGS = - 4.5 V - 7.5 - 12 0.030 at VGS = - 2.5 V - 6.7 0.045 at VGS = - 1.8 V - 5.4 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    si4967dy2002/95/ecsi4967dy-t1-e3si4967dy-t1-ge3+118-jul-08 PDF

    Si4967DY

    Contextual Info: SPICE Device Model Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    si4967dy18-jul-08 PDF

    Si4967DY

    Contextual Info: SPICE Device Model Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    si4967dys-61927rev09-oct-06 PDF

    SI4967DY

    Contextual Info: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) –12 12 rDS(on) (W) ID (A) 0.023 @ VGS = –4.5 V "7.5 0.030 @ VGS = –2.5 V "6.7 0.045 @ VGS = –1.8 V "5.4 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 G2 Top View


    Original
    si4967dys-59633--rev12-oct-98 PDF

    Contextual Info: Si4967DY V1SHAY Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product S2 Q Si o SO-8 6 6 □i D, P-Channel MOSFET 6 6 D2 D2 P-Channel MOSFET ABSOLUTE M AXIMUM RATINGS (TA = 25° C UNLESS OTHERWISE NOTED) P A R A M ETER SYM BOL L IM IT Drain-Source Voltage


    OCR Scan
    si4967dy PDF

    Si4967DY

    Contextual Info: SPICE Device Model Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range


    Original
    si4967dy25-feb-99 PDF

    SI4967DY

    Contextual Info: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.023 @ VGS = - 4.5 V - 7.5 0.030 @ VGS = - 2.5 V - 6.7 0.045 @ VGS = - 1.8 V - 5.4 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2


    Original
    si4967dysi4967dy-t108-apr-05 PDF

    SI4967DY

    Contextual Info: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.023 @ VGS = - 4.5 V - 7.5 0.030 @ VGS = - 2.5 V - 6.7 0.045 @ VGS = - 1.8 V - 5.4 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2


    Original
    si4967dysi4967dy-t118-jul-08 PDF

    3771

    Abstract: 8948 AN609 Si4967DY
    Contextual Info: Si4967DY_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1].


    Original
    si4967dyan60912-jan-063771+18948 PDF

    Contextual Info: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.023 at VGS = - 4.5 V - 7.5 - 12 0.030 at VGS = - 2.5 V - 6.7 0.045 at VGS = - 1.8 V - 5.4 • Halogen-free According to IEC 61249-2-21 Definition


    Original
    si4967dy2002/95/ecsi4967dy-t1-e3si4967dy-t1-ge3+22011/65/eu12-mar-12 PDF

    Si4967DY

    Abstract: Si4967DY-T1
    Contextual Info: Si4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.023 @ VGS = - 4.5 V - 7.5 0.030 @ VGS = - 2.5 V - 6.7 0.045 @ VGS = - 1.8 V - 5.4 S1 S2 SO-8 S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 G1 Top View G2


    Original
    si4967dysi4967dy-t1s-31989--rev13-oct-03 PDF

    Contextual Info: SÌ4967DY Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET New Product V p s (V» -12 RDSfOM} ( ° ) I d (A) 0.023 @ VGs = -4.5 V ±7.5 0.030 @ VGS = -2 .5 V ±6 .7 0.045 @ Vqs = -1 -8 V ±5.4 -JuA 9° ' A V* Si S2 p p SO-8 Gì “n ! 3- n ! n Di n O2 Dt


    OCR Scan
    4967dys-59633--12-oct-98si4967dy PDF

    VN10KLS

    Abstract: mosfet bs250 Si4730 SUP85N03-04P VN66AFD Si4835DY si5504 SI3459DV sup65p06 sub75p05
    Contextual Info: Power MOSFET Selector Guide Vishay Siliconix LITTLE FOOT Plusä ä Schottky Name Channel Configuration VDS V rDS(on) @ 10.0V rDS(on) @ 4.5V rDS(on) @ 3.3V rDS(on) @ 2.5V rDS(on) @ 1.8V ID (A) Max. Qg (nC) Typ. PD (W) Max. SO-8 Si4831DY P Single Plus Integrated


    Original
    si4831dysi4833dysi4852dysi4816dy+1410singlevn50300lvn50300tot-23vn66afdvn10klsmosfet bs250si4730sup85n03-04psi4835dysi5504si3459dvsup65p06sub75p05 PDF

    YTA630

    Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620
    Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509


    Original
    2n70002n70022sj3772sj378+162sj3802sj4012sj4022sj4072sj4122sj419yta630mtw14p20bss125mtaj30n06hd2sk2837 equivalentsmu10p05smp60n06 replacementste180n10rfh75n05eirfd620 PDF