2SJ378 Search Results

2SJ378 Datasheets (11)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SJ378	Toshiba	P-Channel MOSFET	Original	PDF	424.4KB	6
2SJ378	Toshiba		Original	PDF	44.05KB	9
2SJ378	Toshiba	Power MOSFETs Cross Reference Guide	Original	PDF	165.78KB	67
2SJ378	Toshiba	Power MOSFET Selection Guide with Cross Reference Data	Original	PDF	1.45MB	45
2SJ378	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	111.2KB	1
2SJ378	Toshiba	TRANS MOSFET P-CH 60V 5A 3(2-8M1B)	Scan	PDF	313.68KB	5
2SJ378	Toshiba	Silicon P channel field effect transistor for high speed, high current switching applications, relay drive, DC-DC converter and motor drive applications	Scan	PDF	282KB	5
2SJ378	Toshiba	FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE (LL-pi-MOSV)	Scan	PDF	313.69KB	5
2SJ378TP	Toshiba	2SJ378 - TRANSISTOR 5 A, 60 V, 0.28 ohm, P-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power	Original	PDF	418.79KB	6
2SJ378TP	Toshiba	TRANS MOSFET P-CH 60V 5A 3(2-8M1B)	Scan	PDF	282KB	5
2SJ378(TP,Q)	Toshiba	2SJ378 - MOSFET P-CH 60V 5A TPS	Original	PDF	418.79KB	6

2SJ378 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: T O SH IB A 2SJ378 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2- tt-M O SV 2SJ 378 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm 5.0 ± 0 .2 4V Gate Drive	OCR Scan	2sj378	PDF
2SJ378 Abstract: J378 Contextual Info: 2SJ378 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ378 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) z High forward transfer admittance	Original	2sj378 j378	PDF
J378 Abstract: 2SJ378 Contextual Info: 2SJ378 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ378 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm l 4 V gate drive l Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) l High forward transfer admittance	Original	2sj378 j378	PDF
2SJ378 Contextual Info: TOSHIBA 2SJ378 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ378 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE 8.0 ± 0.2 APPLICATIONS 4V Gate Drive	OCR Scan	2sj378	PDF
j378 Abstract: 2SJ378 J3-78 Contextual Info: 2SJ378 東芝電界効果トランジスタ 2 シリコンPチャネルMOS形 L −π−MOSⅤ 2SJ378 ○ リレー駆動DC−DC コンバータ用 ○ モータドライブ用単位: mm z 4V 駆動です。 : RDS (ON) = 0.16Ω (標準) z オン抵抗が低い。	Original	2sj378 -100a -10vid 20070701-ja +2j378 j3-78	PDF
j378 Abstract: 2sj378 Contextual Info: 2SJ378 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ378 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance	Original	2sj378 j378	PDF
YTA630 Abstract: MTW14P20 BSS125 MTAJ30N06HD 2SK2837 equivalent SMU10P05 SMP60N06 replacement STE180N10 RFH75N05E IRFD620 Contextual Info: Power MOSFETs Cross Reference Alphanumerically Part Number VDSS V RDS(ON) (ohm) ID (A) PD (W) Package 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401 2SJ402 2SJ407 2SJ412 2SJ419 2SJ420 2SJ421 2SJ438 2SJ439 2SJ464 2SJ465 2SJ468 2SJ469 2SJ482 2SJ507 2SJ508 2SJ509	Original	2n7000 2n7002 2sj377 2sj378 +162sj380 2sj401 2sj402 2sj407 2sj412 2sj419 yta630 mtw14p20 bss125 mtaj30n06hd 2sk2837 equivalent smu10p05 smp60n06 replacement ste180n10 rfh75n05e irfd620	PDF
2SJ378 Contextual Info: TOSHIBA 2SJ378 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ378 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS INDUSTRIAL APPLICATIONS U nit in mm 8.0 ± 0.2 4V Gate Drive	OCR Scan	2sj378	PDF
Contextual Info: 2SJ378 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ378 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance	Original	2sj378	PDF
j378 Contextual Info: 2SJ378 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ378 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) z High forward transfer admittance	Original	2sj378 j378	PDF
j378 Abstract: 2SJ378 Contextual Info: 2SJ378 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ378 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm 4 V gate drive Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance	Original	2sj378 25ments j378	PDF
j378 Abstract: 2SJ378 Contextual Info: 2SJ378 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ378 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm 4-V gate drive Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) High forward transfer admittance	Original	2sj378 j378	PDF
2SJ378 Contextual Info: TOSHIBA 2SJ378 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-?r-MOSV 2SJ378 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE 8.0 ± 0.2 APPLICATIONS 4V Gate Drive	OCR Scan	2sj378	PDF
j378 Abstract: 2SJ378 Contextual Info: 2SJ378 2 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type L −π−MOSV 2SJ378 Relay Drive, DC−DC Converter and Motor Drive Applications Unit: mm z 4-V gate drive z Low drain−source ON resistance : RDS (ON) = 0.16 Ω (typ.) z High forward transfer admittance	Original	2sj378 j378	PDF

Contextual Info: TOSHIBA 2SJ378 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE L2-tt- M O S V 2SJ378 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS RELAY DRIVE, DC-DC CONVERTER AND MOTOR DRIVE 8.0 ± 0.2 APPLICATIONS 4V Gate Drive	OCR Scan	2sj378 --100/ia --60v 20kfi	PDF
5252 F 1009 4-pin Abstract: TPC 8028 MARKING S3H SOT363 TK8A50D equivalent tk6a65d equivalent 2SK4112 TPCA8030-H toshiba laptop charging CIRCUIT diagram TK80A08K3 TPCA*8025 Contextual Info: 2009-5 PRODUCT GUIDE MOSFETs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4	Original	5252 f 1009 4-pin tpc 8028 marking s3h sot363 tk8a50d equivalent +6tk6a65d equivalent 2sk4112 tpca8030-h toshiba laptop charging circuit diagram tk80a08k3 tpca*8025	PDF
2SK2056 Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078 Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1	Original	bce0017b 2sk2056 2sk1603 2sk1603 datasheet +7toshiba "ultra high speed" diode 1a transistor 2sk1603 2sk3561 equivalent 2sk2915 equivalent 1045y 2sk3569 equivalent 2sk1078	PDF
2SK3567 equivalent Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603 Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2	Original	bce0017f e-28831 bce0017g 2sk3567 equivalent +92sk3569 equivalent tpca*8023 tk8a50d equivalent 2sk2056 2sk3878 equivalent tpca8023 2sk941 equivalent 2sk3561 equivalent 2sk1603	PDF
2SK3878 equivalent Abstract: 2sk2611 2SK3759 2SK3878 2SK3869 2SK2013 toshiba POWER MOS FET 2sj 2sk 2SK3868 2SK3567 equivalent 2SK2718 Contextual Info: [ 2 ] Selection Guide [ 2 ] Selection Guide [ 2 ] Selection Guide Power MOSFET Product Line-up ID = 0.5~20 A 1. VDSS (V) 12 16 20 30 40 50 60 100 150 180 ◊2SK2963 (0.7) ▲2SK2962 (0.7) ◊2SJ508 (1.9) ▲2SJ509 (1.9) ▲2SK3670 (1.7) ♦2SJ313 (5.0) ▼2SJ338 (5.0)	Original	2sk2963 2sk2962 2sj508 2sj509 +152sk3670 2sj313 2sj338 2sk2013 2sk2162 2sj360 2sk3878 equivalent 2sk2611 2sk3759 2sk3878 2sk3869 toshiba power mos fet 2sj 2sk 2sk3868 2sk3567 equivalent 2sk2718	PDF
2SK4207 Abstract: to220sis TPCA*8023 tk80A08K3 TPC8119 TK40A08K3 2SK4112 ssm3j16fs 2sk3568 TPC8A03 Contextual Info: 製品カタログ 2009-9 東芝半導体製品カタログ MOSFET SEMICONDUCTOR h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 特長と構造. 3	Original	bcj0082b bcj0082a 2sk4207 to220sis +8tpca*8023 tk80a08k3 tpc8119 tk40a08k3 2sk4112 ssm3j16fs 2sk3568 tpc8a03	PDF
TPCA8064 Abstract: TK12A10K3 TPCA8077 2SK3567 equivalent SSM3J328 TPCA8077-H TJ11A10M3 TK50E06K3A TPCA8077 TPCA8028 Contextual Info: 2010-3 PRODUCT GUIDE MOSFETs h t t p : / / w w w. s e m i c o n . t o s h i b a . c o . j p / e n g C O N T E N T S 1 Features and Structures . 3 2 Toshiba’s MOSFET Product Lines and Part Numbering Schemes . 4	Original	bce0082b tpca8064 tk12a10k3 tpca8077 +72sk3567 equivalent ssm3j328 tpca8077-h tj11a10m3 tk50e06k3a tpca8077 tpca8028	PDF
GT30F124 Abstract: TPCP8R01 GT30J124 JAPANESE 2SC TRANSISTOR 2010 smd transistor h2a smd marking 8L01 tk25e06k3 GT45F122 gt30g124 GT30F123 Contextual Info: SEMICONDUCTOR GENERAL CATALOG Transistors Bipolar Small-Signal Transistors Junction FETs Combination Products of Different Type Devices MOSFETs Bipolar Power Transistors Radio-Frequency Bipolar Small-Signal Transistors Radio-Frequency Small-Signal FETs Radio-Frequency Power MOSFETs	Original	2010/9sce0004k sc-43 2sc1815 700the +10gt30f124 tpcp8r01 gt30j124 japanese 2sc transistor 2010 smd transistor h2a smd marking 8l01 tk25e06k3 gt45f122 gt30g124 gt30f123	PDF
transistor bc 245 Abstract: 247Y smd transistor h2a gt30g122 gt35j321 GT45F123 MARKING SMD PNP TRANSISTOR h2a GT45F122 GT45f122 Series gt30f122 Contextual Info: Transistors Bipolar Small-Signal Transistors z 190 Small-Signal FETs z 205 Combination Products of Different Type Devices z 215 Bipolar Power Transistors z 217 Power MOSFETs z 232 Power Transistor Modules z 242 Radio-Frequency Bipolar Small-Signal Transistors z 243	Original	sc-43 2sc1815 tps615 tps616 +11tps610 transistor bc 245 247y smd transistor h2a gt30g122 gt35j321 gt45f123 marking smd pnp transistor h2a gt45f122 gt45f122 series gt30f122	PDF
2SK3566 equivalent Abstract: 2SK3562 equivalent 2SK3561 equivalent 2SK3878 equivalent 2SK3568 equivalent 2SK3911 equivalent 2SK941 equivalent tpc8118 equivalent replacement tpc8118 2SK3767 equivalent Contextual Info: 2007-12 PRODUCT GUIDE Power MOSFETs Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2	Original	bce0017e s-167 bce0017f 2sk3566 equivalent +92sk3562 equivalent 2sk3561 equivalent 2sk3878 equivalent 2sk3568 equivalent 2sk3911 equivalent 2sk941 equivalent tpc8118 equivalent replacement tpc8118 2sk3767 equivalent	PDF

2SJ378 Search Results

2SJ378 Datasheets (11)

2SJ378 Datasheets Context Search

2SJ378

J378

2SJ378

j378

j378

YTA630

2SJ378

j378

j378

j378

2SJ378

j378

5252 F 1009 4-pin

2SK2056

2SK3567 equivalent

2SK3878 equivalent

2SK4207

TPCA*8064

GT30F124

transistor bc 245

2SK3566 equivalent