TO220SIS Search Results

Contextual Info: NTE2911 MOSFET N−Channel, Enhancement Mode High Speed Switch TO220SIS Type Package Features: D Low Drain−Source ON−Resistance D High Forward Transfer Admittance D Low Leakage Current D Enhancement Mode Absolute Maximum Ratings: TA = +25°C, Note 1 unless otherwise specified

Contextual Info: TK8A25DA MOSFETs Silicon N-Channel MOS π-MOS TK8A25DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.41 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

TK72A

Contextual Info: TK72A12N1 MOSFETs Silicon N-channel MOS U-MOS-H TK72A12N1 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 120 V)

tk12a65d

Abstract: tk12a65
Contextual Info: TK12A65D MOSFETs Silicon N-Channel MOS π-MOS TK12A65D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.46 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 6.0 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 650 V)

tk8a60

Contextual Info: TK8A60W MOSFETs Silicon N-Channel MOS DTMOS TK8A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.42 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

5A 700V MOSFET

Abstract: 700v 5A mosfet
Contextual Info: TOSHIBA Semiconductor Company | Data Sheet Search | Product Details Page 1 of 1 Products Search Product Search: Enter a Part Number or Description Category Top | Refine Search | Results | Product Details Part Number: TK5A65D * Category: Transistors /Power MOSFET/Nch 500V<VDSS 700V

TJ9A10M3

Contextual Info: TJ9A10M3 MOSFETs Silicon P-Channel MOS U-MOS TJ9A10M3 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 120 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V)

TK16A60W

Abstract: TK16
Contextual Info: TK16A60W MOSFETs Silicon N-Channel MOS DTMOS TK16A60W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.16 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching

Contextual Info: TK16A60W5 MOSFETs Silicon N-Channel MOS DTMOS TK16A60W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.18 Ω (typ.) by using Super Junction Structure : DTMOS

Contextual Info: TK14A65W5 MOSFETs Silicon N-Channel MOS DTMOS TK14A65W5 1. Applications • Switching Voltage Regulators 2. Features (1) (2) Fast reverse recovery time: trr = 100 ns (typ.) Low drain-source on-resistance: RDS(ON) = 0.25 Ω (typ.) by using Super Junction Structure : DTMOS

Contextual Info: TTD1409B Bipolar Transistors Silicon NPN Triple-Diffused Type TTD1409B 1. Applications • High-Voltage Switching 2. Features 1 High DC current gain: hFE = 600 (min) (VCE = 2 V , IC = 2 A) (2) Monolithic construction with built-in base-emitter shunt resistor

TK15A

Abstract: TK15A20D
Contextual Info: TK15A20D MOSFETs Silicon N-Channel MOS π-MOS TK15A20D 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 0.12 Ω (typ.) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 200 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA)

Contextual Info: TK5A45DA MOSFETs Silicon N-Channel MOS π-MOS TK5A45DA 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 1.52 Ω (typ.) (2) High forward transfer admittance: |Yfs| = 1.5 S (typ.) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 450 V)

TJ11A10M3

Contextual Info: TJ11A10M3 MOSFETs Silicon P-Channel MOS U-MOS TJ11A10M3 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain-source on-resistance: RDS(ON) = 100 mΩ (typ.) (VGS = -10 V) (2) Low leakage current: IDSS = -10 µA (max) (VDS = -100 V)

Contextual Info: TK31A60W MOSFET シリコンNチャネルMOS形 DTMOS TK31A60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.073 Ω (標準) (2)

Contextual Info: TK100A06N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK100A06N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 2.2 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 60 V)

Contextual Info: TTC3710B バイポーラトランジスタ シリコンNPNエピタキシャル形 TTC3710B 1. 用途 • 大電流スイッチング用 2. 特長 1 コレクタエミッタ間飽和電圧が低い: VCE(sat) = 0.4 V (最大) (IC = 6 A , IB = 0.3 A) (2)

Contextual Info: TK40A10N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK40A10N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 6.8 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 100 V)

Contextual Info: TK100A10N1 MOSFET シリコンNチャネルMOS形 U-MOS-H TK100A10N1 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 3.1 mΩ (標準) (VGS = 10 V) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 100 V)

Contextual Info: TK8A25DA MOSFET シリコンNチャネルMOS形 π-MOS TK8A25DA 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 0.41 Ω (標準) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 250 V)

circuit diagram of luminous inverter

Abstract: TC7600FNG Sine wave PWM DC to AC Inverter ics 3 phase inverter 180 degree conduction mode wave circuit diagram of toshiba washing machine ULN2003APG 3 phase inverter 150 degree conduction mode wave 3 phase motor soft starter igbt circuit diagram microwave cooking circuit diagram TB6584FNG
Contextual Info: 2009-9 SYSTEM CATALOG Home Appliances SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng Induction Rice Cookers Refrigerators Air Conditioners Automatic Washing Machines Dishwashers •CONTENTS Characteristics of Motor Control Devices Overview of Toshiba’s Semiconductor Devices for Home Appliances

Contextual Info: TJ11A10M3 MOSFET シリコンPチャネルMOS形 U-MOS TJ11A10M3 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 100 mΩ (標準) (VGS = -10 V) (2) 漏れ電流が低い。: IDSS = -10 µA (最大) (VDS = -100 V)

Contextual Info: TK20A60W MOSFET シリコンNチャネルMOS形 DTMOS TK20A60W 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) スーパージャンクション構造DTMOSの採用によりオン抵抗が低い。: RDS(ON) = 0.13 Ω (標準) (2)

Contextual Info: TK25A20D MOSFET シリコンNチャネルMOS形 π-MOS TK25A20D 1. 用途 • スイッチングレギュレータ用 2. 特長 (1) オン抵抗が低い。: RDS(ON) = 0.047 Ω (標準) (2) 漏れ電流が低い。: IDSS = 10 µA (最大) (VDS = 200 V)