2SK1078 Search Results

2sj239

Abstract: TE12L 2SK1118 2SJ239LB 2SK1717 k1119 2SK1380 2SK945 2SK1913 T0220FL
Contextual Info: MOSFET Product Matrix VdssM * 100 *1 20 60 Id A * 0.6 o 0.8 o 2SK1078(TE12L)[0.55] 1.0 o 2SJ238(TE12L)[0.85] 2.0 o 2SK1717(TE12L)[0.37] 200 250 400 I 2SK1079(TE12L)[1.3] • 2SK945(LB,STA1)[5.0] * • 2SK1113[0.6] 3.0 • 2SK 1112(LB,STA1)[0.16] • 2SK1719(LB,STA1)[0.11]

Contextual Info: TOSHIBA TD62M4503AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI-CHIP TD62 M 4 5 0 3 A F N POWER MOS FET 4CH SINK DRIVER TD62M4503AFN is 1CHIP 4ch FET Sink Driver built in Discrete Power MOS FET 2SK1078 x4 and Diodes (1 SSI 84). FEATURES • 4V Drive

2SK1078

Abstract: 1SS184 SSOP24 TD62M4503AFN
Contextual Info: TD62M4503AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI−CHIP TD62M4503AFN POWER MOS FET 4CH SINK DRIVER TD62M4503AFN is 1CHIP 4ch FET Sink Driver built in Discrete Power MOS FET 2SK1078 x 4 and Diodes (1SS184). FEATURES 4V Drive Low ON Resistance : RDS (ON) = 0.58 Ω (Typ.)

Contextual Info: TO SHIBA TD62M4503AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI-CHIP TD62M4503AFN POWER MOS FET 4CH SINK DRIVER TD62M4503AFN is 1CHIP 4ch FET Sink Driver built in Discrete Power MOS FET 2SK1078 x4 and Diodes (1 SSI 84). FEATURES • 4V Drive • Low ON Resistance : Rn<; ( n h i\ = 0 .5 8 0 (Typ.)

2SK1078

Abstract: 2SK107
Contextual Info: TOSHIBA Discrete Semiconductors 2SK1078 Field Effect Transistor Silicon N Channel MOSType L2-7t-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance - R iDS(ON) = 0.4Í2 (Typ.)

2SK1073

Abstract: lm815 2SK1074 LM8002 2SK1078 2SK1079 2SK1082 2SK1092 2SK1084 2SK1100
Contextual Info: m s tí: % m & m iS H f V j Hi A K V * * 2S K 1 0 6 9 H # LF A J N D -4 0 G D S BÍL LF/HF A J N D -2 2 G D O 2SK1074 S M 2SK1078 2SK1079 të S P d/Pc h 2SK1070 2SK1073 £ 1 9} * (V) - 22 0 & (A) * (W) I gss (max) (A) Vg s (V) (min) (A) % (max) V d s (A)

2SK1078

Contextual Info: TOSHIBA 2SK1078 Field Effect Transistor industrial Applications Unit in mm Silicon N Channel MOS Type L2-tt-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance

2SK1078

Abstract: 1SS184 SSOP24 TD62M4503AFN
Contextual Info: TD62M4503AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI−CHIP TD62M4503AFN POWER MOS FET 4CH SINK DRIVER TD62M4503AFN is 1CHIP 4ch FET Sink Driver built in Discrete Power MOS FET 2SK1078 x 4 and Diodes (1SS184). FEATURES l 4V Drive l Low ON Resistance : RDS (ON) = 0.58 Ω (Typ.)

2SK1078

Abstract: VSOP24 M4503 TD62 TD62M4503AFN
Contextual Info: TOSHIBA TD62M4503AFN TOSHIBA BIPOLAR DIGITAL INTEGRATED CIRCUIT MULTI-CHIP TD62M4503AFN POWER MOS FET 4CH SINK DRIVER TD62M4503AFN is 1CHIP 4ch FET Sink Driver built in Discrete Power MOS FET 2SK1078 x4 and Diodes (1SS184). FEATURES • 4V Drive • Low ON Resistance : Rd S(ON) =0.580 (Typ.)

Contextual Info: TOSHIBA Discrete Semiconductors 2SK1078 Field Effect Transistor Silicon N Channel MOSType L2-jt-MOS III High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive • Low Drain-Source ON Resistance ' Rds (on ) = 0.4£i (Typ.)

VSOP24

Contextual Info: MULTI CHIP TD62M4503AFN BIPO LAR DIGITAL INTEGRATED CIRCUIT POWER MOS FET 4CH SINK DRIVER TD62M4503AFN is 1CHIP 4ch FET Sink Driver built in Discrete Pow er M O S FET 2SK1078 x4 and Diodes (1 SS 184). FEATURES • 4V Drive • Low ON Resistance : R d S (O N ) =0-580 (Typ.)

2SK1078

Abstract: 2SK107
Contextual Info: FIELD EFFECT TRANSISTOR_ SILICON N CHANNEL MOS TYPE L2-7r-MOSm 2SK1078 INDUSTRIAL APPLICATIONS HIGH SPEED SWITCHING APPLICATIONS RELAY DRIVE, MOTOR DRIVE AND DC-DC CONVERTER APPLICATIONS Unit in mm 1.6.MAX. 4-6MAX. 1.7 MAX. FEATURES : • 4-Volt Gate Drive

2SK2056

Abstract: 2SK1603 2sk1603 datasheet TOSHIBA "ULTRA HIGH SPEED" DIODE 1A transistor 2SK1603 2SK3561 equivalent 2SK2915 EQUIVALENT 1045y 2SK3569 equivalent 2SK1078
Contextual Info: O W Y.C M.T .1 O W C W 2005-3 WW .100Y. M.T O W WW .100Y.C M.TW .TW M WW 00Y.CO .TW .CO .TW Y W M .1 W.1 Y.COM W WW 00Y.CO .TW W W W .T 00 W.1 Y.COM W W.1 Y.COM W W W W .T W 00 W M.T .100 W.1 Y.COM W M.T O W O W C . .C W WW .100Y .TW M.T .100 .TW 00Y M O 1

2SK1078

Abstract: ES7R RDR 4A
Contextual Info: m n ow£ ¥• * « u Iff •• « » m 4 ö 4 * » 3 * nn » jÿ * ca iss -c. Pi o sr I p o cc l to < • » ä w 4 » i Ihk TBK «■ H V J • • *• 3 f— ö CO ca l-H Pt h t—• o o •fc > Q oo Cß II H* CO ■fe > jafr m X M- M- II 1—1 s*.

2SK3567 equivalent

Abstract: 2SK3569 equivalent TPCA*8023 TK8A50D equivalent 2SK2056 2SK3878 equivalent tpca8023 2SK941 equivalent 2SK3561 equivalent 2SK1603
Contextual Info: 2008-9 PRODUCT GUIDE Power MOSFETs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g Toshiba’s power MOSFET devices meet the needs of a wide range of ultra-high-density applications. 1.Features and Structure. 2

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2SK1649

Abstract: 2SK537 2SK1349 2SK1377 2sk538 2SK788 2SK1513 2SK1723 2SK889 2SK941
Contextual Info: Power MOS FET Lineup [Characteristics Chart] 6. L2-7T-M0S III V dss = 60— 10OV type Low Voltage Series Operable at Logic Level. Maximum ratings (A) 0.8 0.8 5 -5 Voss (V) Package Pd (W) Ros(ON) (Q) Vos (V) TYP. MAX. 60 0.5 POWER-MINI 0.40 0.55 10 60 0.9 TO-92MOD

Transistor BC 1078

Abstract: uln2004 application note UDN2983A equivalent UDN2580A equivalent replacement M5266P TD62083 uln2803 REPLACEMENT FOR relay driver ic ULN2803 m54586p ULN2032A PA2003C
Contextual Info: Interface Driver ICs PRODUCT GUIDE In recent years, dedicated custom ICs ASICs meeting specifications of various users have been widely used mainly for controlling electronic equipment. On the other hand, general purpose ICs, such as operational amplifiers, regulators,

MMBD2104

Abstract: Transistor NEC 05F hp2835 diode ZENER DIODE t2d what is the equivalent of ZTX 458 transistor MMBD2103 T2D DIODE 3w T2D 8N 2n2222 as equivalent for bfr96 mmbf4932
Contextual Info: The Surface Mount Device Code Book R P Blackwell G4PMK A marsport publication! Introduction SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a

MMBD2103

Abstract: ZENER DIODE t2d MMBD2101 MMBD2102 MMBD2104 SMD codes bc107 TRANSISTOR SMD CODE PACKAGE SOT23 Transistor NEC 05F BAT15-115S NDS358N
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.

SMD Codes

Abstract: TRANSISTOR SMD T1P MMBD2104 BAW92 smd transistor A6a schottky diode s6 81A a4s smd transistor Transistor SMD a7s transistor SMD P2F MMBD2101
Contextual Info: THE SMD CODEBOOK SMD Codes. SMD devices are, by their very nature, too small to carry conventional semiconductor type numbers. Instead, a somewhat arbitrary coding system has grown up, where the device package carries a simple two- or three-character ID code.

j2y transistor

Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,

Transistor AND DIODE Equivalent list

Abstract: Transistor Equivalent list 8ch pnp DARLINGTON TRANSISTOR ARRAY pnp Octal Darlington Transistor Arrays equivalent transistor 2sk 2SK1078 TD62783 equivalent TD62783 TD62504 equivalent pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: [ 2 ] Product List [ 2 ] Product List 1. S-Drivers new product (9 series, 9 devices) TD62 S X X X A FM Package Output withstand voltage (A: 50 V) Input H/L (odd number: Low) Output current (0.5 A/0.1 A) 0: Sink current output 3: Source current output 6: Push-pull output