2SK1096 Search Results

2SK1096-MR

Abstract: A2144 1096-MR A2142
Contextual Info: 2SK1096-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-III SERIES • Outline Drawings ■ Features • High current • Low on-resistance • Mo secondary breakdown • Low driving power • High forward Transconductance ■ applications • Motor controllers

Contextual Info: MOSFETs F-lll Series - Logic Level Operation, Low R ds ON 30-150 Volts Maximum Ratinas Device Type V dss (V) 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SKl387MR " IS K iW " — '2SK1B56 ; 2SK1389 2SK1390R 2SK2049 2SK1087MR 2SK1817MR

2SK1083MR

Abstract: 2SK1086MR 2SK1096MR 2SK1387MR 2SK1388 2SK1505MR 2SK1881L 2SK2048L 2sk1506
Contextual Info: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 3 0 - 1 5 0 Volts Device Type Maximum Ratinas V dss (V) Pd (W) Id (A ) 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK1508 2SK1389 2SK1390R 2SK2049

A2142

Abstract: 2sk mosfet
Contextual Info: 2SK1096-M SIPMOS FUJI POWER MOS-FET F-III SERIES N-CHANNEL SILICON POWER MOS-FET • Outline Drawings ■ Features • High current • Low on-resistance • No secondary breakdown • Low driving power • High forward Transconductance ■Applications • Motor controllers

k1096

Contextual Info: 2SK1096-MR FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET _ - F-III S E R IE S • Outline Drawings ■ Features • High current • Low on-resistance • Mo secondary breakdown • Low driving power • High forward Transconductance

2SK1096

Contextual Info: 2SK1096-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier

TO-220F15

Abstract: 2630 2SK1388 2SK2248-01L 2SK1083MR 2SK1086MR 2SK1096MR 2SK1387MR 2SK1505MR 2SK1508
Contextual Info: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 3 0 - 1 5 0 Volts Device Type Maximum Ratinas V dss (V) Pd (W) Id ( A ) 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK1508 2SK1389 2SK1390R 2SK2049

z9l3

Abstract: a2142 2SK1096-MR SERIES UK5 A2144
Contextual Info: 2SK1096-MR FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-III SERIES • Outline Drawings ■ Features • High current • Low on-resistance • Mo secondary breakdown • Low driving power • High forward Transconductance ■ applications • Motor controllers

2SK109

Abstract: 2SK1096-MR
Contextual Info: 2SK1096-MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET F- III SERIES Outline Drawings Features High current Low on-resistance No secondary breakdown Low driving power High forward transconductance TO-220F15 Applications Motor controllers General purpose power amplifier

Contextual Info: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 30 -150 Volts Ma ximumRatinas P d (W) V dss (V) Id (A) Device Type 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK15Q8 2SK1389 2SK1390R 2SK2049 2SK1087MR

LS 2025

Contextual Info: <§ MOSFETs F-lll Series - Logic Level Operation, Low R d s ON 3 0 - 1 5 0 Volts Device Type 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK1508 2SK1389 2SK1390R 2SK2049 2SK1087MR 2SK1817MR 2SK2446 L.S 2SK2050

2SK2225

Abstract: 2SK2248-01L 2SK1388 2SK1083MR 2SK1086MR 2SK1096MR 2SK1387MR 2SK1505MR 2SK1881L 2SK2048L
Contextual Info: MOSFETs F-lll Series - Logic Level Operation, Low R d s o n 3 0 - 1 5 0 Volts Device Type Maximum Ratinas V dss (V) Pd (W) Id (A ) 2SK1505MR 2SK2048L.S 2SK1388 2SK1083MR 2SK1096MR 2SK1086MR 2SK1881L.S 2SK1387MR 2SK1089 2SK1508 2SK1389 2SK1390R 2SK2049 2SK1087MR

k502

Abstract: cnc schematic 2SK1096-M 2SK1096M CQ 417
Contextual Info: 2SK1096-M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET F-III SERIES • O utline D raw ing s ■ Features • High current • Low on-resistance • No secondary breakdow n • Low driving p o w er • High fo rw ard T ransconductance

T0220F

Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390
Contextual Info: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)

2SK100

Abstract: 2SK2765 2SK2029-01LS 2sk1936 2SK1940 2sk2761 2SK196 2SK2082 2SK1082 2SK182
Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 450V BY PACKAGE TYPE F-l: P A G E 11 FA P-IIA : FA P-I: P A G E 11 FA P-IIS : F-ll: P A G E 11 F-lll: FA P-II: P A G E 12 SU R FA C E MOUNT FA P-III: P A G E 15 FA P-IIIA A U TO : P A G E 16 FA P-IIIB : P A G E 16 F-V:

2SK1083-MR

Abstract: 2SK1096-MR 2SK1946-01MR 2SK2018-01L 2SK2098-01MR 2SK2226-01L 2SK2248-01L 2SK2249-01L 2SK2516-01L 2SK2517-01L
Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET F-III / FAP-III シリーズ（Nチャネル） F-III / FAP-III series N channel ロジックレベル駆動／アバランシェ耐量保証 Logic level drive / Avalanche rated 形 式

6DI15S-050

Abstract: 1MB1400N-120 6D130Z-120 ENC471 2sk2850 2sk2761 ESJA58-06A 1MBH-60D 1mbh60d-090a 6DI15S050
Contextual Info: fl^ Ä f^ l/T y p e Number Index Page Page Page Page Page Page 1D500A-030 1DI200E-055 1DI200K-055 1DI200M-120 1DI200MA-050 1DI200Z-100 12 17 17 14 13 15 1MBH15D-120 1MBH20D-060 1MBH25-120 1MBH25D-120 1MBH30D-060 1MBH50-060 19 19 19 19 19 19 2DI75Z-120 2DI75Z-140

2sk1005

Abstract: T0-220F T0220F 2sk1010 2SK1011 2sk1217 2SK1105 2SK956 2SK1084 2sk1101
Contextual Info: COLLMER SEMICONDUCT OR INC 34E » . • 25307^2 Ü001SS7 1 ■ COL "’’’P 3>°\ - 3 @U>(MsffO§OE Power MOSFET Advantages: • F-l Series • F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness V G S + /- 30V, Reduced turn

2SK962

Abstract: T03P 2MI200F-025
Contextual Info: COLLHER SEMICONDUCTOR INC 22367^2 OOGIS?^ OTT « C O L 4ÔE » MOSFETS <§ F-ll SERIES toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 Ratings lo (A) Vdss(V) 900 900 900 900 1000 Characteristics (Tc=25°C) Sis(S)

2SK1969

Abstract: 2SK1508 2SK2691 2SK2690 2SJ477 2SK2906 TO-220F15 2SK1390 2SK1083 2SK1881
Contextual Info: POWER MOS FET Feb-00 Quick Selection Guide F-I series High speed switching F-II series FAP-II series High speed switching Avalanche rated FAP-IIA series Low-on resistance Low typical capacitance F-III series P channel Avalanche rated F-III series FAP-III series

2SK2652

Abstract: 2SK2771-01R
Contextual Info: MOSFET QUICK REFERENCE GUIDE -30V to 300V BY PACKAGE TYPE F-l: Page 30 FAP-IIA: Page 32 FAP-IIIA: Page 34 FAP-I: Page 30 FAP-IIS: Page 33 FAP-IIIB: Page 35 F-ll: Page 30 F-lll: Page 34 FAP-IIIBH: Page 35 FAP-II: Page 31 FAP-III: Page 34 F-V: Page 35 SURFACE MOUNT

90T03P

Abstract: 2SK956 10002 2SK906A 2SK1082 t009 2SK1388 2SK1661 2SK900 FUJI Semiconductors
Contextual Info: P U H STLdEOTiSDE COLLHER SEMICONDUCTOR INC 4ÔE D • 553Ô7TE GG01ÔD2 Db4 ■ COL T 3 > < V > Power MOSFET Advantages: • F-l Series Low RDS on • F-ll Series VGS +/- 30V Reduced turn off time . FAP-II Series High avalanche ruggedness VGS +/- 30V, Reduced turn

F5022

Abstract: f5017h F5021H f5016h 2sk3528 2sk2696 F5038H 2SK3102-01R 2SK2696-01MR F5018
Contextual Info: パワーMOSFET / Power MOSFETs • パワーMOSFET Power MOSFET Super FAP-Gシリーズ Super FAP-G series 低オン抵抗低ゲート容量 Low-on resistance and low gate charge 形 式 Device type VDSS ID ID pulse Volts Amps. Amps. 2SK3474-01

2SK1815

Abstract: 2SK1388
Contextual Info: MOSFETs FAP-IIIA Series Automotive Types Logic Level Operation, Low Rds ON , High Avalanche Ruggedness, Integrated G-S Surge Protection, 60 Volts Device Type 2SK1822-01M 2SK2165-01 2SK2166-01 2SK2259-01M 2SK1823-01 2SK1969-01 Maximum Ratiilas I d (A) Pd (W)