2SK182 Search Results

2SJ344

Abstract: 2SK1827
Contextual Info: TOSHIBA 2SJ344 TOSHIBA FIELD EFFECT TRANSISTOR SILICON P CHANNEL MOS TYPE 2SJ344 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANAROG SWITCH APPLICATIONS 2.1 ± 0.1 Low Threshold Voltage : Vth = - 0 .8 - - 2.5 V High Speed Enhancement-Mode Small Package Complementary to 2SK1827

2SK1823-01

Abstract: DDQ3114 2sk mosfet
Contextual Info: 2SK1823-01 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET _ . _ - _ _ _ _ _ _ FAP-IIIA SERIES • Features Outline Drawings • High cu rren t • L ow o n-resistance • N o secondary b reakd ow n

2SK1828

Contextual Info: 2SK1828 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK1828 ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm • 入力インピーダンスが高く, 駆動電流が極めて小さい。 • Vth が低く, 低電圧での CMOS などからの直接駆動が可能。

2SJ342

Abstract: 2SK1825
Contextual Info: 2SJ342 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ342 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.8~−2.5 V • High speed • Enhancement-mode • Small package • Complementary to 2SK1825

MV3000

Abstract: RL5050 2SK1826
Contextual Info: 2SK1826 東芝電界効果トランジスタ シリコンNチャネルMOS形 2SK1826 ○ 高速スイッチング用 ○ アナログスイッチ用 単位: mm • 入力インピーダンスが高く, 駆動電流が極めて小さい。 • Vth が低く, 低電圧での CMOS などからの直接駆動が可能。

2SJ345

Abstract: 2SK1828
Contextual Info: 2SJ345 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ345 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5 to −1.5 V • High speed • Small package • Complementary to 2SK1828 Marking

Contextual Info: T O SH IB A 2SK1829 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K 1 829 HIGH SPEED SWITCHING APPLICATIONS Unit in mm ANALOG SWITCH APPLICATIONS 2.1 ± 0.1 1.25 ± 0.1 EE- 2.5V Gate Drive Low Threshold Voltage : Vth = 0.5~1.5V 2 High Speed

Contextual Info: 2SK1822-01M SIPMOS FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES • Features I Outline Drawings • High current • Low on-resistance b 5*02 • No secondary breakdown 2 7±0 2 • Low driving power • High forward Transconductance

Contextual Info: 2SJ342 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ342 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.8~−2.5 V • High speed • Enhancement-mode • Small package • Complementary to 2SK1825

Contextual Info: 2SK1825 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1825 High Speed Switching Applications Analog Switch Applications • 4 V gate drive • Low threshold voltage: Vth = 0.8~2.5 V • High speed • Enhancement-mode • Small package Unit: mm

Contextual Info: 2SK1821-01MR FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET FAP-IIA SERIES Outline Drawings Features High speed switching Low on-resistance No secondary breakdown High voltage Low driving power Avalanche-proof TO-220F15 Applications Switching regulators

2SJ342

Abstract: 2SK1825
Contextual Info: TO SH IBA 2SJ342 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2SJ342 ANAROG SWITCH APPLICATIONS Low Threshold Voltage : Vth = - 0 .8 - - 2.5V High Speed Enhancement-Mode Small Package Complementary to 2SK1825

2SK1829

Contextual Info: TOSHIBA 2SK1829 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2SK1 829 Unit in mm HIGH SPEED SWITCHING APPLICATIONS 2.1 ± 0.1 ANALOG SWITCH APPLICATIONS 2.5V Gate Drive Low Threshold Voltage : Vth = 0.5~1.5V High Speed Enhanncement-Mode Small Package

2SK1828

Contextual Info: TOSHIBA 2SK1828 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL M OS TYPE 2SK1 828 Unit in mm HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS + 0.5 2 .5 - 0 .3 + 0.25 2.5V Gate Drive Low Threshold Voltage : Vth = 0.5~1.5V High Speed Enhanncement-Mode

Contextual Info: 2SJ343 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ343 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.8~−2.5 V • High speed • Enhancement-mode • Small package • Complementary to 2SK1826

Toshiba 2SJ

Contextual Info: 2SJ345 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ345 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5~−1.5 V • High speed • Small package • Complementary to 2SK1828 Marking Unit: mm

2SK1828

Contextual Info: 2SK1828 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type 2SK1828 High Speed Switching Applications Analog Switch Applications • 2.5 V gate drive • Low threshold voltage: Vth = 0.5~1.5 V • High speed • Enhancement-mode • Small package Marking

2SJ342

Abstract: 2SK1825 Toshiba 2SJ
Contextual Info: 2SJ342 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ342 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.8~−2.5 V • High speed • Enhancement-mode • Small package • Complementary to 2SK1825

2SJ346

Abstract: 2SK1829
Contextual Info: 2SJ346 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ346 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5~−1.5 V · High speed · Small package · Complementary to 2SK1829 Marking Unit: mm

2SJ342

Abstract: 2SK1825
Contextual Info: 2SJ342 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ342 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.8~−2.5 V · High speed · Enhancement-mode · Small package · Complementary to 2SK1825

Contextual Info: TOSHIBA 2SK1829 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 2 S K18 29 HIGH SPEED SWITCHING APPLICATIONS ANALOG SWITCH APPLICATIONS • 2.5V Gate Drive • Low Threshold Voltage : V£h = 0.5~1.5V • High Speed • Enhanncement-Mode • Small Package

2SJ343

Abstract: 2SK1826
Contextual Info: TOSHIBA 2SJ343 TOSHIBA FIELD EFFECT TRANSISTOR HIGH SPEED SWITCHING APPLICATIONS SILICON P CHANNEL MOS TYPE 2SJ343 Unit in mm ANAROG SWITCH APPLICATIONS + 0.5 Low Threshold Voltage : Vth = - 0 .8 - - 2.5 V High Speed Enhancement-Mode Small Package Complementary to 2SK1826

2SK1822-01M

Contextual Info: 2SK1822-01M N-channel MOS-FET FAP-IIIA Series 60V > Features - 0,07Ω 20A 35W > Outline Drawing High Current Low On-Resistance No Secondary Breakdown Low Driving Power High Forward Transconductance Avalanche Proof Including G-S Zener-Diode > Applications

2SJ346

Abstract: 2SK1829
Contextual Info: 2SJ346 TOSHIBA Field Effect Transistor Silicon P Channel MOS Type 2SJ346 High Speed Switching Applications Analog Switch Applications • Low threshold voltage: Vth = −0.5 to −1.5 V • High speed • Small package • Complementary to 2SK1829 Marking