T03PF Search Results

2SC4138

Abstract: 2SC4907 2SC4706 2sc3680
Contextual Info: Transistors for Switch Mode Power Supply For AC 80 to 130V input Specifications VCBO V VCEO (V) 250 200 Package IC (A) MT-25 (T0220) FM20 (T0220F) MT-100 (T03P) FM100 (T03PF) 2SC5271 5 2SC4073 2SC4418 5 2SC4662 2SC3832 2SC3890 7 2SC4130 500 400 10 2SC4138

2SC5287

Abstract: 2SC5249 2SC3927 2SC4138
Contextual Info: • Transistors for Switch M ode Pow er Supply # For AC 80 to 130V input_ _ Specifications Package V cb o V ! V ce o (V Ic (A) 250 200 5 MT-25 (T0220) FM20 (T0220F) MT-100 ÍT03P) FM100 (T03PF) 2SC4138 2SC4296 2SC3833

2SA1295 2SC3264

Abstract: 2SA1694 2SC4467 2SA1186 2SC2837 MT100 2sa1492 2sc3856 T03PF transistor 2sa1494 2SB1560 2SD2493 transistor 2sb1624 2sd2493
Contextual Info: 2-1. Power Transistors Transistors for Audio Amplifier Single emitter Type No. PC W 2SA1725/2SC4511 30 2SA1726/2SC4512 50 VCEO (V) IC (A) hFE (min) fT (MH Z) Package FM20 (T0220F) MT-25 (T0220) 80 6 2SA1693/2SC4466 MT-100 (T03P) 60 2SA1907/2SC5099 FM100 (T03PF)

M124

Abstract: R605A OE R611 m210 g
Contextual Info: PACKAGE DIMENSIONS mm T03PL E m a x. ' M110 5.0 ¿ 3 .2 .20 <§ 1 l° ‘ f « 3 ? « 101 o 4. CD 1 2 3 | 1 ! in I 3.0 •Ii 2.0 <n E E 0. 6 „ 3. 0 G a te C o lle c to r E m itte r 5.5 3.5 T03PF M116 ;° J 'eri 2 °± 2 - 0 ., 0.6 ; £ 3.0 I i iS 1 ij

2SC3365 -TO3

Abstract: 2sc2820 2SB566 2SB566A 2SC2612 2SC2613 2SC2816 2SC2898 2SC2899 2SC2979
Contextual Info: HITACHI/ OPTOELECTRONICS blE ]> • 4MTb2DS □□13776 TD7 ■ H I T H T 24 4. Pow er Bipolar Transistors H IT A C H I 4.1 Introduction This power bipolar transistor line-up contains data on the range of Hitachi's discrete devices for applications in industrial, automotive, computer and consumer equipment.

2SK1011

Abstract: 2SK1007-01 2SK1009-01 2SK1011-01 2SK1013-01 2SK1101-01M 2SK1221-01 2SK1222-01 2SK1917-01M 2sk1211
Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M

2SK955

Abstract: 2SK906A 2SK1134 2SK899 2SK900 2SK2001 2SK1660 2SK725 2SK2000A 2SK905
Contextual Info: COLLNER SEMICONDUCTOR INC b3E D • 223Û7T2 00Dlfl70 fc.05 ■ COL < |_ MOSFETs F-l Series Low Rds ON 50-900 V olts Device TvDe 2S K 1134 2SK905 2SK905A 2SK2000A 2SK906 2SK906A 2SK900 2SK947M 2SK948 2SK901 2SK1 549 2SK902 2SK901A

000M5

Abstract: 2SC4538
Contextual Info: Ratings and Characteristics of 2 1. Out 1ine Drawings T0-3PF 2. Absolute Maximum Ratings S 4 5 3 Fuji Power Transistor 8 F ? Tc=25°C Symbol item Maximum Rating Collector-Base Voltage Vceo 9 0 0 Collector-Emitter Voltage V ceo 8 0 0 Emitter-Base Voltage

FS12UM-5

Abstract: FS12KM MARKING CODE mosfet FS16UM5 FS20KM-6 FS12KM-5 FS20UM-5 FS10UM-5 FS16KM-5 FS10KM-5
Contextual Info: K O N f llO r Powerex, Inc., 200 Hlllls Street, Youngwood, Pennsylvania 15697-1800 412 925-7272 S h o r t FO D TI D & t3 Selector Guide Discrete MOSFET - Medium Voitage FS Series MOSFETs (250 ~ 450V) Electrical Characteristics Maximum Ratings, Tc = 25°C

003A

Abstract: t393 ET393R
Contextual Info: SPECIFICATION DEVICE NAME : TYPE NAME : BIPOLAR TRANSISTOR ET 3 9 3 R SPEC. No. DATE Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Cc^LtcL DWG.NO. DRAWN ! CHECKED T % Y 0257-R-004a Ratings

2SK1778

Abstract: 27.145 2SK1296 2SJ172 2SJ173 2SJ174 2SJ247 2SK1300 2SK1301 2SK1302
Contextual Info: HITACHI 9 Table 6 : DIII-L Series Typical Characteristics Cont'd Electrical Characteristics typ. Absolute Maximum Ratings Package TO-220AB TO-220FM T0-3P T0-3P-FM Type Number 2SJ172 2SJ173 2SJ174 2SK970 2SK971 2SK972 2SK1296 2SK1300 2SK1301 2SK1302 2SJ247

T0220F

Abstract: 2sk1512 2SK1217 2SK1511 T0-220F 2SK1084 2SK1388 2MI200F-025 2sk1018 2SK1390
Contextual Info: 22307^2 ODGISTT OTT « C O L COLLHER SEMICONDUCTOR INC MÛE » •v-m-yy MUSFETS s F-ll SERIES (toff 30% REDUCED, VGS=30V (cont’d.) Device Type 2SK1082 2SK962 2SK1217 2SK1512 2SK1511 R atings Id (A) V dss OO 900 900 900 900 1000 C h aracteristics (Tc=25°C)

Contextual Info: I S P E C I F I C A T I O N T E N T A T I V E DEV ICE NAME : P o w e r M Q S F E T TYPE NAME : 2 S K 2 7 5 9 - 0 1 R SPEC. No. F u j i E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE )RAW N IHECKEO NAME APPROVED Fuji Electric C 0 4 L M

Contextual Info: J. 1 F 1 C A T S P E C DEVICE NAME : TYPE NAME : SPEC. No. : P o w e r I O N M O S F E T 2 SK 2 7 6 4 - F u j i 0 1 R E l e c t r i c Co., Ltd. This Sp e cifica tio n is subject to change without notice. DATE NAME APPROVED CHECKED . d w g .n o . F u ji E le c tr ic C a ^ i d .

Contextual Info: SPECIFICATION DEVICE NAME * TYPE NAME SPEC. No. P o w e r M O S F E T 2 SK 1 5 4 9 - R : F u j i E l e c t r i c C o ., Ltd. This Specification is subject to change without notice. DATE DRAWN NAME APPROVED Fuji Electric Ca,Ud CHECKED 0 Y 0 2 5 7 -R -0 0 4 a

2SK1171

Abstract: 900 v 9 amp mosfet 2SK1015 2SK726 2SK1511 2SK1222 j545 2SK1018 2SK9 2SK151
Contextual Info: COLLMER SEMI CO NDUC TO R INC 34E » . • 25307^2 Ü001SS7 1 « C O L " T '' 3>°\ - 3 IIU JM M S O E Power MOSFET Advantages: . F-l Series . F-ll Series Low RDS (on V G S + /- 30V Reduced turn off time High avalanced ruggedness VG S + /- 30V, Reduced turn

DON60

Contextual Info: 1 SPEC 1F 1CATION DEVICE NAME : P owe TYPE NAME : 2 S K 2 2 0 9 — 0 1 F? SPEC. No. : MS5F3165 r F u j i M O S F E T E l e c t r i c Co., Ltd. This S p e c i f i c a t i o n is s u bj e ct t o change wi th o ut notice. DATE NAM E APPROVED Fuji Electric Coglici

2SK1778

Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.

2sk1507

Abstract: 2SK1011-01 2SK1018-01 2sk1018 2SK1820-01 2SK956 2SK1007-01 2SK1009-01 2SK1013-01 2SK1101-01M
Contextual Info: COLLHER SEMICONDUCTOR INC b3E D • 523fl7^2 D0G1Ô71 SMI « C O L MOSFETs <§ FAP-II Series VGS ± 30V, High Avalanche Ruggedness, Reduced Turn-Off Time 500-1000 Volts ! ! I I Device Tvoe 2SK1221-01 2SK1917-01M 2SK1007-01 2SK1009-01 2SK1011-01 2SK1101-01M

2SK1778

Abstract: 2SJ177 2SJ295 KWSA103 PF0030 PF0040 PF0042
Contextual Info: HITACHI 29 5.4 Communications Mobile RF SAW Filters KTACS KAMT« N M T/G SM Tb Bx Tu ft * T» 9m , hvm U m Typ IC - 4ädB Wide band aaaaMtkw •OStfBqrp SMD pàg - 4.5 s 5 J s 2mm 505L fan p riiw HWSAHB HWSB102 HWSAXB H W SBXa H W SA 03 H W SM » O m« Q m

2SK1778

Abstract: 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

Contextual Info: S P E C I F I C A T I O N DEVICE NAME : P o w e r M O S F E T TYPE NAME : 2 S K 2 5 6 1 - 0 1 R SPEC. No. F u j i This S p e c i f i c a t i o n OATH NAME APPROVED C o . , Ltd. is s u b j e c t t o change w i t h o u t n o ti c e . Fuji Electric Co,Ltd DRAWN

2SK2223-01R

Abstract: 003A
Contextual Info: SPECIFICATION DEVICE NAME : P o w e r M O S F E T TYPE NAME : 2 S K 2 2 2 3 - 0 1 R SPEC. No. Fu ji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED F u ji CHECKED | S d w g .no . DRAWN E le c t r ic C o ^ U d

5503 MOSFET

Abstract: 2SK2561-01R mark 5503 MOSFET
Contextual Info: •L SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME : 2 S K 2 5 6 1— 0 1R SPEC. No. F u j i E l e c t r i c Co., Ltd. Th i s Spec i f i cat i on is subject to change without notice. DATE NAM E APPROVED Fuji Electric Coglici DRAWN CHECKED o z o Ì °l