4AM12 Search Results

Contextual Info: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance N-channel: RDS on| < 0.075 Q, VGS = 10 V, ID = 4 A P-channel: RDS(im < 0.! 2 O, V GS = - 1 0 V, ID = - 4 A • Capable o f 4 V gate drive

2SJ173

Abstract: 2SJ176 2SK1094 2SK971 4AM12 Hitachi 2SJ Hitachi DSA00305
Contextual Info: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 Ω, VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.12 Ω, VGS = –10 V, I D = –4 A • Capable of 4 V gate drive

4AM12

Abstract: SP-10 Hitachi DSA0046
Contextual Info: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 , VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.12 , VGS = –10 V, I D = –4 A • Capable of 4 V gate drive

Contextual Info: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array HITACHI November 1996 Application High speed power switching Features • • • • • • • Low on-resistance N-channel: RDS o1i < 0.075 ¿1, VGS= 10 V, ID= 4 A P-channel: RDS(o1i) < 0.12 ¿1, VGS= -10 V, ID= -4 A

Hitachi 2SJ

Abstract: Hitachi DSA002751
Contextual Info: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 Ω, VGS = 10 V, ID = 4 A P-channel: RDS(on) ≤ 0.12 Ω, VGS = –10 V, ID = –4 A • Capable of 4 V gate drive

4AM12

Abstract: 2SJ173 2SJ176 2SK1094 2SK971 2SK109
Contextual Info: HITACHI 4AM12 S ILIC O N N -C H A N N E L /P -C H A N N E L POW ER M O S FET ARRAY HIGH SPEED POWER SWITCHING • FEATURES • L o w O n-R esistance N -c h a n n e l: RD£ on £ 0.075 Q, V cs - 10 V, l„ - 4 A P -ch a n n e l: Ros (on) £ 0.12 Q, VGS — -10 V,

4AM12

Abstract: SP-10 Hitachi DSA00316
Contextual Info: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array ADE-208-1210 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance N-channel: RDS(on) ≤ 0.075 , VGS = 10 V, I D = 4 A P-channel: RDS(on) ≤ 0.12 , VGS = –10 V, I D = –4 A

Hitachi DSA002787

Contextual Info: 4AM12 Silicon N-Channel/P-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance N-channel: RDS on ≤ 0.075 Ω, VGS = 10 V, ID = 4 A P-channel: RDS(on) ≤ 0.12 Ω, VGS = –10 V, ID = –4 A • • • • •

4AM12

Abstract: SP-10
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SK1275

Abstract: 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16
Contextual Info: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

2SK1778

Abstract: 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

2sk 4207

Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

1002ds

Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
Contextual Info: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2

2sk1058 equivalent

Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,

2SK2225

Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
Contextual Info: CONTENTS • Index. 4 ■ General Information.

2SK1778

Abstract: 2SK971 2SK970 2SK972 2SK973 2SK975 4AK15 4AK16 4AK17 4AK18
Contextual Info: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

lvc16244

Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
Contextual Info: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List

hitachi j50

Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
Contextual Info: CONTENTS Index . 5 General Information . 9

2SC 8550

Abstract: 6020v4 6030v4 HITACHI 08122B 2SC 8050 HITACHI 08123B transistor h945 H945 TRANSISTOR c 6030v4 2sk3545
Contextual Info: Status List HITACHI TRANSISTOR/GaAsIC Vol.16-4 2002.11 Topic - Hitachi High Frequency Bipolar Transistors . 2 Index . 3, 4

HITACHI Power MOSFET Arrays

Abstract: 2sk1299 2SK975 2sk1306 2SK1919 2SK970 2SK971 2SK972 2SK973 4AK15
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

6AM12

Abstract: SP12TA 2sk970 SP12 PACKAGE TYPE 6 2SK971 4AK16 2SK972 2SK973 2SK97-1 4AK15
Contextual Info: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching

2SK1254

Abstract: 2sj177 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16 4AK17
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully m oulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching