std2n52
Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
Contextual Info: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232
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2sk11192sk11202sk11512sk1152+162sk11532sk11542sk11552sk11562sk11572sk1158std2n52stp2na60buz102 equivalentssh6n80rfp60n06replacement for irl2203nbuz91 equivalentrfp60n06leirfp460 cross referencebuz91a equivalent
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2SK1202
Abstract: TTL-T100
Contextual Info: 2SK1202- • L|inb2ü5 ÜD13241 30Q ■ H I T M HITACHI/ OPTOELECTRONICS blE D" SILICON N-CHANNEL MOS FET HIGH SPEED POWER SWITCHING ■ FEATURES 1.G ate, 2 .D rain (Flange) 3. Source (Dimensions in nm ) ■jP • Low On-Resistance • High Speed Switching
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2sk1202silicond13241tc--252sk1202+1ttl-t100
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2SK1202
Abstract: LM 464 diode silicon P channel MOS FET J 350 Hitachi Scans-001 koss
Contextual Info: • 2SK1202 MHIbSQS 0013241 300 ■ HITM HITACHI/ÍOPTOELECTRONICS ^ 16.0am ^ SILICON N-CHANNEL MOS FET b lE »' g HIGH SPEED POWER SW ITCHING ■ FEATURES • • • • • 1.G ate, 2 . D ra in F la n g e ) Low On-Resistance High Speed Switching Low Drive Current
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2sk1202lm 464 diodesilicon p channel mos fet j 350hitachi scans-001+1koss
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2SK1202
Abstract: 2SK120 koss
Contextual Info: • 2SK1202 MHIbSQS 0013241 3Q0 ■ HITM HITACHI / OPTOELECTRONICS ^ 16.0am ^ SILICON N-CHANNEL MOS FET blE D" g HIGH SPEED POWER SW ITCHING 3 ■ FEATURES 1 .G ate, 2 .D rain (Flange) 3. Source (Dimensions in ran ) L Ï* • • • • • Low On-Resistance
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SSH6N80
Abstract: IRF640 equivalent buz100 equivalent ste38NA50 irf540 equivalent stp2na60 buz10 equivalent BUK444 equivalent 2SK2700 equivalent BUZ71 equivalent
Contextual Info: Power MOSFETs Cross Reference INDUSTY STANDARD 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1162 2SK1163 2SK1164 2SK1165 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205
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2sk11192sk11202sk11512sk1152+162sk11532sk11542sk11552sk11562sk11572sk1158ssh6n80irf640 equivalentbuz100 equivalentste38na50irf540 equivalentstp2na60buz10 equivalentbuk444 equivalent2sk2700 equivalentbuz71 equivalent
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fqp60n06
Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier
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stp7nb40stt3pf30lstd20ne03lstp60ne03l-12+14stp60ne03l-10stp40nf03lstp80ne03l-06sts4dpf30lfqp60n06spb32n03lrfp60n06ssh6n80fqp50n10fsd6680stp55nf06 and its equivalentsfp70n03hgtg*n60a4dirf630 irf640
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2SJ235
Abstract: 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet 2SK1151 2SK1152 2SK1153
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass«nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow
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0-30w0-50w0-100w00-200w+132sk5792sk5802sk11512sk11522sk11532sk11542sj2352sk12992sk18782sj2992sj2 high voltage p channel mosfet2sj2142sk mosfet
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2SK1275
Abstract: 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16
Contextual Info: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching
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10-pin12-pin4ak172sk972+134ak152sk9712sk12022sk12032sk12042sk6962sk12754am146am122sk9702sk9732sk9754ak16
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2sk1299
Abstract: 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740 2SK1151 2SK1152 2SK1153
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be
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0-30w0-50w0-100w00-200w+132sk5792sk5802sk11512sk11522sk11532sk11542sk12992sk5132sk12022sk12312sk16652sk6842sk740
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ac Inverter schematics 10 kw
Abstract: 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C GN12030E
Contextual Info: HITACHI 2.2 Product Matrix : Discretes Modules 19 The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES
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gn4530cgn6010agn6015agn6020c+14gn6030cgn6050egn6075egn9060egn12015cgn12030eac inverter schematics 10 kw200v dc motor igbtmbn300a6ups schematicsinverter circuit schematics2sj2792sk1762ac inverter 10 kw
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2SK1778
Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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high-sp032sk16652sj2152sj217+162sk13032sk13042sk12982sk16662sj2162sj2182sk17782sk1092sj2362sk19192sj1752sj1762sj1822sj2372sk10932sk1094
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2SK44
Abstract: 2SJ182 2SJ214 2SK513 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SJ235
Contextual Info: 31 HITACHI Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be
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2sk1197
Abstract: 2501L NEC 2501L 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159
Contextual Info: f m £ Ÿ± m « m m & =£ ü V* * % K V s a * X P d /P c h I* (V) (A) ft 9t (W) Ig s s (max) (A) Vgs (V) to ^33. 3 «B. fé £ Vg s * X ÌD >S (min) (max) V d s (A) (V) (A) n (Ta=25°C) te (min) (max) Vos (V) (V) (V) 9m (min) (typ) V d s (V) (S) (S)
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2sk11532sk11542sk11552sk1156+112sk11572sk11722sk117350nstyp2sk11942sk11952sk11972501lnec 2501l2sk11582sk1159
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2SK1778
Abstract: 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching
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10-pin12-pin4ak172sk972+144ak152sk9712sk16652sj2152sj2172sk13032sk17782sk12994am12transistor 2sk13042sj1774ak222sk1919transistor 2sk
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2SK1778
Abstract: 2SK1776 2SK1665 2SK1094 2SJ236 2SK430 2SK1151 2SK1152 2SJ175 2SK579
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. Hitachi's range of devices offers these
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0-30w0-50w0-100w00-200w+132sk5792sk5802sk11512sk11522sk11532sk11542sk17782sk17762sk16652sk10942sj2362sk4302sj175
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2SK1778
Abstract: 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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high-sp032sk16652sj2152sj217+162sk13032sk13042sk12982sk16662sj2162sj2182sk17782sj2362sj177pf0030 hitachi2sj2992sk19192sj1752sj1762sj1822sj237
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2sj177
Abstract: 2sk1778 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SK97-2 2sk1301 2sj175
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be
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2sk1058 equivalent
Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,
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o220fsp-10sp-12sp-12ta+111560d2sk1058 equivalentmbm300bs6hitachi mosfet2sk1270transistor 2sk 122sk16452sk975 equivalentequivalent transistor 2sk2sk1058 mosfet application notes2sc297
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IRF540 complementary
Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
Contextual Info: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3
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rfp6n50rfd16n03lsmrfp15n05lrfp50n05+16rfp15n05rfp50n05lrfd14n05lrfd14n05lsmrfd14n05smrfp14n05lirf540 complementaryirfz44n complementarystd2n52toshiba irfz44a datasheetstp2na60ssh6n80rfp60n06ste38na50irf630 complementaryirf3205 ir
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200W MOSFET POWER AMP
Abstract: HA11511CNT 2sk mosfet 2sc2610 2SK1327 2SK1225 2SK296 2sk1342 2SK1635 2SK1151
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow
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0-30w0-50w0-100w00-200w+152sk5792sk5802sk11512sk11522sk11532sk1154200w mosfet power ampha11511cnt2sk mosfet2sc26102sk13272sk12252sk2962sk13422sk1635
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2SK1158
Abstract: 2sk1299 2SK1341 2SK1342 2SK1151 2SK1152 2SK1313 2SK1314 2SK1315 2SK1316
Contextual Info: HITACHI 10 DIII-H Series High Voltage Range, V dss from 250V The DHI-H Series further expands Hitachi's line up of advanced MOSFET devices. Recently, new additional high-voltage products to complement those of the low-voltage DIII-L Series. It has the
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csj2972sk8222sk13022sk1307+162sk16232sk6222sk13032sk1304dc48v2sk4402sk11582sk12992sk13412sk13422sk11512sk11522sk13132sk13142sk13152sk1316
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MBN300A6
Abstract: flyback 200W UPS schematics 2SK1635 2SK415 DC MOTOR SPEED CONTROL USING IGBT Hitachi Three-Phase Motor Driver 2sk1299 2SK1665 GN12030E
Contextual Info: HITACHI 19 2.2 Product Matrix : Discretes Modules The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES
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gn4530cgn6010agn6015agn6020c+15gn6030cgn6050egn6075egn9060egn12015cgn12030embn300a6flyback 200wups schematics2sk16352sk415dc motor speed control using igbthitachi three-phase motor driver2sk12992sk1665
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2sk1299
Abstract: 2SJ295 2SJ299 transistor 2sk 2SJ278 2SJ279 2SJ290 2SJ291 2SJ292 2SJ298
Contextual Info: HITACHI 1.5.4 13 New DIV-L Series The characteristics of todays power MOSFETs continue to improve as costs drop, resulting in the broader application of these devices in place of bipolar transistors. • 2.5V and 4V gate drive device • High speed switching 30% reduction in
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2sj2-462sj2232sj1822sj245+162sj2142sj2192sj2202sj2422sj1752sj1762sk12992sj2952sj299transistor 2sk2sj2782sj2792sj2902sj2912sj2922sj298
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2SK1045
Abstract: 2SK1048 2SK1050 2SK1044 2SD2791 2SK1011 2sd2498 2SD299 2SD300 2SD373
Contextual Info: STI Type: 2SC642A Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 800 ICEV: ICEV A: hFE: 30 hFE A: 150m VCE: VBE: IC: COB: fT: 2.0 Case Style: TO-204AA/TO-3: Industry Type: 2SC642A STI Type: 2SC643 Notes: Polarity: NPN Power Dissipation: 50 VCEV: VCEO: 1100
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2sc642ao-204aa/to-32sc6432n4030die+122c40302sc643a2sk10452sk10482sk10502sk10442sd27912sk10112sd24982sd2992sd3002sd373
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