2SK513
Abstract: 10091 FET 2SK513 Hitachi Scans-001
Contextual Info: -4 4 9 B 2 U S 'HI IAUH1 / UP i U h L h C I R U N 1O S 7 73C 1 00 89 2SK513 0 7 ~ -3 f-/ / 3>E J LiMcìtiEDS O D I O O S 11! S S ILIC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING • FEATURES ' • High Breakdow n Voltage. • • High Speed Sw itching.
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-2sk5132sk51310091fet 2sk513+1hitachi scans-001
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diode t25 4 L5
Abstract: 2SK513 2sk513 o DIODE T25 4 Jo hitachi 2sk513 RA26
Contextual Info: 44962TJ5"'H TT'A C TH I7"C U P I O E L E C I RON IC S V 2SK513— P 7 -—3f-// 73C 10089 73 SILICON N -C H A N N E L M O S FET HIGH S P EE D POW ER SWITCHING • FEATURES • H igh B reak d o w n V oltage. • H igh S p e e d S w itch in g . • H igh C utoff fr e q u e n c y .
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449620b1q089-q2sk513t0-220ab+6-2sk513diode t25 4 l52sk513 odiode t25 4 johitachi 2sk513ra26
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diode SS 2a
Abstract: 2Sk51
Contextual Info: 4 4 9 6 2 'Ü V ‘H I'TACT 17'COP I U t L E O ' l RUN I C S > 2SK513— ?3 73C 10089 DElj| 4 4 T tiE D S D T - 3 f- / / O O lD G ß i S |~ S ILIC O N N -C H A N N E L M O S FET HIGH SPEED POWER SWITCHING • FEATURES • High Breakdown Voltage. • High Speed Switching.
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2SK513
Abstract: FET 2SK513 2sk513 o 2SK51
Contextual Info: 2SK513 S IL IC O N N - C H A N N E L M O S F E T Ä 4 « « A x 4 T t y / • ft ft • X 4 7 f- y tr- •« £ fltft« M A S O # f£ i* . • x ^ f y M » ^ . D C —D C 3 >*<—9 . (JE O E C TO 2 2 0 A B ) ■ A B S O L U T E M A X IM U M R A T IN G S (T ,= 2 5 C)
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2sk513-m-t-150t0-220abfet 2sk513+22sk513 o2sk51
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2SJ235
Abstract: 2sk1299 2SK1878 2SJ299 2sj2 high voltage p channel mosfet 2SJ214 2sk mosfet 2SK1151 2SK1152 2SK1153
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass«nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow
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0-30w0-50w0-100w00-200w+132sk5792sk5802sk11512sk11522sk11532sk11542sj2352sk12992sk18782sj2992sj2 high voltage p channel mosfet2sj2142sk mosfet
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2sk1299
Abstract: 2SK513 2SK1202 2SK1231 2SK1665 2SK684 2SK740 2SK1151 2SK1152 2SK1153
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be
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0-30w0-50w0-100w00-200w+132sk5792sk5802sk11512sk11522sk11532sk11542sk12992sk5132sk12022sk12312sk16652sk6842sk740
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ac Inverter schematics 10 kw
Abstract: 200v dc motor igbt MBN300A6 UPS schematics inverter circuit schematics 2SJ279 2SK1762 ac Inverter 10 kw GN12015C GN12030E
Contextual Info: HITACHI 2.2 Product Matrix : Discretes Modules 19 The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES
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gn4530cgn6010agn6015agn6020c+14gn6030cgn6050egn6075egn9060egn12015cgn12030eac inverter schematics 10 kw200v dc motor igbtmbn300a6ups schematicsinverter circuit schematics2sj2792sk1762ac inverter 10 kw
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2SK1778
Abstract: 2SK109 2SJ236 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237 2SK1093 2SK1094
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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high-sp032sk16652sj2152sj217+162sk13032sk13042sk12982sk16662sj2162sj2182sk17782sk1092sj2362sk19192sj1752sj1762sj1822sj2372sk10932sk1094
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2SK44
Abstract: 2SJ182 2SJ214 2SK513 2SK1151 2SK1152 2SK1153 2SK579 2SK580 2SJ235
Contextual Info: 31 HITACHI Power MOSFET for Switching Power Supply I _ Commendation products Input i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be
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0-30w0-50w0-100w00-200w+112sk5792sk5802sk11512sk11522sk11532sk11542sk442sj1822sj2142sk5132sj235
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2SK520
Abstract: 2SK523 2SK508 2SK537 2sk515 2SK511 2SK514 2SK518 2SK519 2sk43
Contextual Info: - 28 - € tt £ m & m iS f . 1 1 Jk K /È Ä V* V m m . (V) «• m të P d /P c h * * (A) * * (W) Ig s s (max) (A) Vg s (V) ^ W (Ta=25°C) te (min) (max) Vd s (V) (V) (V) (min) (max) Vd s (A) (A) (V) Id (A) Q (min) (S) 1 I >>60 B -— ' ü Vd s (V) Id
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2sj2992sj3002sj3172sk11+152sk122sk521100mhz2sk52220mvmax2sk5232sk5202sk5082sk5372sk5152sk5112sk5142sk5182sk5192sk43
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2SK1778
Abstract: 2sk1299 4AM12 transistor 2sk1304 2sj177 4AK22 2SK1919 2SK971 transistor 2sk 2SK972
Contextual Info: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching
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10-pin12-pin4ak172sk972+144ak152sk9712sk16652sj2152sj2172sk13032sk17782sk12994am12transistor 2sk13042sj1774ak222sk1919transistor 2sk
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k2645
Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt
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mk135mk136mk137mk138+16mk139mk140mk142mk145mk155157krk2645k4005u664bmosfet k4005mb8719transistor mosfet k4004sn16880nstk5392str451bc417
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2SK1778
Abstract: 2SK1776 2SK1665 2SK1094 2SJ236 2SK430 2SK1151 2SK1152 2SJ175 2SK579
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. Hitachi's range of devices offers these
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0-30w0-50w0-100w00-200w+132sk5792sk5802sk11512sk11522sk11532sk11542sk17782sk17762sk16652sk10942sj2362sk4302sj175
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2SK1778
Abstract: 2SJ236 2sj177 pf0030 hitachi 2SJ299 2SK1919 2SJ175 2SJ176 2SJ182 2SJ237
Contextual Info: 12 HITACHI DIII-HF Series High Speed Devices To improve switching losses for certain critical switching applications, Hitachi has introduced HF-Series with better built-in diode breakdown capability then the existing DIII-H series using life-time control technology.
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high-sp032sk16652sj2152sj217+162sk13032sk13042sk12982sk16662sj2162sj2182sk17782sj2362sj177pf0030 hitachi2sj2992sk19192sj1752sj1762sj1822sj237
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2sk1058 equivalent
Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
Contextual Info: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,
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o220fsp-10sp-12sp-12ta+111560d2sk1058 equivalentmbm300bs6hitachi mosfet2sk1270transistor 2sk 122sk16452sk975 equivalentequivalent transistor 2sk2sk1058 mosfet application notes2sc297
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hitachi mosfet power amplifier audio application
Abstract: 2SK215 equivalent PM4550C 2sd667 2sb647 2SD667 equivalent 2SJ99 K429 HITACHI 2SJ56 k399 Hitachi 2sk176 2sj56
Contextual Info: APPLICATION NOTE 1-9 Pov/er MOS FET • ' Bo* 3 V•? * ¿ 'S r ^ m is y 701 S ! Reo N o 64 1688 07 P O BO X 1194. R A N D tíU R G , 2 1 2 5 M F K E N T H O US E D O V E R S T R E E T . R A N D B U R G T V L , 21 9 4 0 1 1 7 8 9 1 4 0 0 /2 T E L E X 4 -2 0 4 5 2 F A X 1 0 1 1 )7 8 7 0 2 6 3
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re79-24hitachi mosfet power amplifier audio application2sk215 equivalentpm4550c+72sd667 2sb6472sd667 equivalent2sj99k429hitachi 2sj56k399hitachi 2sk176 2sj56
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200W MOSFET POWER AMP
Abstract: HA11511CNT 2sk mosfet 2sc2610 2SK1327 2SK1225 2SK296 2sk1342 2SK1635 2SK1151
Contextual Info: HITACHI 31 Power MOSFET for Switching Power Supply I _ i/ass« nailon • Multiple Outputs. There may be multiple outputs (positive and negative) that may differ in their voltage and current ratings. Such outputs may be isolated from each other. -tow
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0-30w0-50w0-100w00-200w+152sk5792sk5802sk11512sk11522sk11532sk1154200w mosfet power ampha11511cnt2sk mosfet2sc26102sk13272sk12252sk2962sk13422sk1635
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2SK1158
Abstract: 2sk1299 2SK1341 2SK1342 2SK1151 2SK1152 2SK1313 2SK1314 2SK1315 2SK1316
Contextual Info: HITACHI 10 DIII-H Series High Voltage Range, V dss from 250V The DHI-H Series further expands Hitachi's line up of advanced MOSFET devices. Recently, new additional high-voltage products to complement those of the low-voltage DIII-L Series. It has the
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csj2972sk8222sk13022sk1307+162sk16232sk6222sk13032sk1304dc48v2sk4402sk11582sk12992sk13412sk13422sk11512sk11522sk13132sk13142sk13152sk1316
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MBN300A6
Abstract: flyback 200W UPS schematics 2SK1635 2SK415 DC MOTOR SPEED CONTROL USING IGBT Hitachi Three-Phase Motor Driver 2sk1299 2SK1665 GN12030E
Contextual Info: HITACHI 19 2.2 Product Matrix : Discretes Modules The full Hitachi IGBT line up is carefully designed to meet a wide range of user needs. There are future plans for a further expansion of this line up. Table 15 : Total IGBT Product Range Ratings DISCRETES
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gn4530cgn6010agn6015agn6020c+15gn6030cgn6050egn6075egn9060egn12015cgn12030embn300a6flyback 200wups schematics2sk16352sk415dc motor speed control using igbthitachi three-phase motor driver2sk12992sk1665
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2SK520
Abstract: 2SK523 2SK508 2sk515 2SK537 2SK519 2SK518 2SK533 2SK505 2SK531
Contextual Info: - 52 - Ä m % ít m € ä 48 £ A » K V * ft £ % (V) ftt ft (A) % S P d/P c h (») Ig s s (max) (A) Vg s (V) W (min) (max) Vd s (A) (A) (V) 'te (Ta=25‘ C) (min) (max) Vd s (V) (V) (V) (min) (S) Id (Ai Id (A) Vd s (V) 2SK492 = æ LF A, A-SW J N D -50 GDO
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2sk4922sk4932sk4942sk505+142sk5072sk521100mhz2sk52220mvmax2sk5232sk5202sk5082sk5152sk5372sk5192sk5182sk5332sk531
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2sk1299
Abstract: 2SJ295 2SJ299 transistor 2sk 2SJ278 2SJ279 2SJ290 2SJ291 2SJ292 2SJ298
Contextual Info: HITACHI 1.5.4 13 New DIV-L Series The characteristics of todays power MOSFETs continue to improve as costs drop, resulting in the broader application of these devices in place of bipolar transistors. • 2.5V and 4V gate drive device • High speed switching 30% reduction in
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2sj2-462sj2232sj1822sj245+162sj2142sj2192sj2202sj2422sj1752sj1762sk12992sj2952sj299transistor 2sk2sj2782sj2792sj2902sj2912sj2922sj298
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TRANSISTOR DATASHEET D1555
Abstract: d1555 transistor TRANSISTOR D1651 D1555 D1557 D1554 d1651 transistor s1854 transistor d1555 transistor d1878
Contextual Info: 型号 2N109 2N1304 2N1305 2N1307 2N1613 2N1711 2N1893 2N2102 2N2148 2N2165 2N2166 2N2219A 2N2222A 2N2223 2N2223A 2N2243A 2N2369A 2N2857 2N2894 2N2905A 2N2906A 2N2907A 2N2917 2N2926 2N2955 2N3019 2N3053 2N3054 2N3055 2N3055 2N3055H 2N3251 2N3375 2N3439 2N3440
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2n1092n13042n13052n1307+162n16132n17112n18932n21022n21482n2165transistor datasheet d1555d1555 transistortransistor d1651d1555d1557d1554d1651transistor s1854transistor d1555transistor d1878
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SIEMENS 800
Abstract: 950p to-247 package MTH6N85 2SK351 IRFAF30 21n60n
Contextual Info: MOSFET Item Number Part Number Manufacturer V BR DSS loss Max (V) (A) ros (on) (Ohms) Po Max ON) 9FS VGS(th) C|S8 •Oper Max Max tr Max tf Min Max Max W (V) (F) (8) (8) (°0 Package Style MOSFETs, N-Channel Enhancement-Type (Cont'd) . . .5 . .10 BUZ308 BUZ80
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o-220abo-218o-204204ac+7o-238aasiemens 800950p to-247 packagemth6n852sk351irfaf3021n60n
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Transistor 2SA 2SB 2SC 2SD
Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle
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transistor 2sa 2sb 2sc 2sd2sk5962sc9062sa1281+6bup 3130c3885a2sd1032sa137934d 937 086bfq59
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