2N2857 Search Results

2n2857 UHF transistor common base amplifier

Abstract: 2N2857
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged UHF Transistor • 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC 2 •

Contextual Info: General Transistor Corporation SMALL SIG N A L TRANSISTORS • ■ ■ NPN TRANSISTORS FOR RF APPLICATIONS VCEO V M/OtNUH RATINI3S le (mA) Ptol (mW) 2N91B 2N2857 2N3600 2N3839 15 15 15 15 50 40 50 40 200 200 200 200 2N5031 2N5032 2N5179 2N5842 10 10 12 10

2n2857 UHF transistor common base amplifier

Abstract: 2n2857 2n2857 common base amplifier 2n2857 data sheet
Contextual Info: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged UHF Transistor • 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC •

2N2857 semicoa

Contextual Info: 2N2857 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • Ultra-High frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2857J

2N2857DCSM

Contextual Info: 2N2857DCSM Dimensions in mm inches . 1 4 A 6 5 6.22 ± 0.13 (0.245 ± 0.005) 0.23 rad. (0.009) A = 1.27 ± 0.13 (0.05 ± 0.005) LCC2 (MO-041BB) Pinouts Pin 1 – Collector 1 Pin 2 – Base 1 Pin 3 – Base 2 Parameter 4.32 ± 0.13 (0.170 ± 0.005) 3 2 1.40 ± 0.15

MMBR2857

Abstract: MMBR2857L 2857L
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA MMBR2857L The RF Line Die S ource S am e as 2N2857 N PN Silicon High Frequency Tran sistor . . . des ig n e d p rim a rily for use in h ig h -g ain , lo w -n o ise a m p lifie r, oscillator and m ix e r ap p licatio n s. P ackaged for thick or th in -film circuits using surface

2N2857

Abstract: 2n3839 RF Transistors
Contextual Info: 2N2857 2N3839 NPN SILICON RF TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2857 and 2N3839 are silicon NPN RF transistors designed for VHF/UHF amplifier, oscillator and converter applications. MARKING: FULL PART NUMBER

Contextual Info: SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857CSM • High Current Gain-Bandwidth Product fT • Hermetic Ceramic Surface Mount Package • Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)

2n3287

Abstract: 2N3294 40244 2N335 2N5851
Contextual Info: 8134693 SEMICOA 40 D e J fll34bc]3 0 G 0 0 1 3 1 7 J ~ - T - a i - C > \ U-H-F AMPLIFIERS Cont’d Electrical Characteristics @ 25°C Maximum Ratings Type NPN PNP 2N3292 2N3293 2N3294 2N918 2N3478 2N2857 210839 2N3600 2N5851 2N5852 2N4252 2N4253 2N3287 2N3288

2N2857

Abstract: 2N2857 semicoa 2N2857 JAN transistor TO-72 2n2857 data sheet
Contextual Info: Data Sheet No. 2N2857 Generic Part Number: 2N2857 Type 2N2857 Geometry 0011 Polarity NPN Qual Level: JAN - JANS REF: MIL-PRF-19500/343 Features: • Low power, ultra-high frequency transistor. • Housed in TO-72 case. • Also available in chip form using

2N2857UB

Abstract: 2N2857UBJ 2N2857UBJS 2N2857UBJX
Contextual Info: 2N2857UB Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • Ultra-High frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2857UBJ

2N2857 semicoa

Abstract: 2N2857J 2N2857 JANTXV 2N2857 2N2857JS 2N2857JV 2N2857JX
Contextual Info: 2N2857 Silicon NPN Transistor Data Sheet Description Applications Semicoa Semiconductors offers: • Ultra-High frequency transistor • Low power • NPN silicon transistor • Screening and processing per MIL-PRF-19500 Appendix E • JAN level 2N2857J

2N2857

Abstract: 2n2857 UHF transistor common base amplifier 2n2857 common base amplifier
Contextual Info: File No. 61 R F Pow e r T r a n s is t o r s Solid State Division 2N2857 RCA-2N2857 i s a d o u b l e - d i f f u s e d e p ita x ia l planar t r a n s i s t o r of the s i l ic o n n-p-n type. I t is e x tre m ely u s e f u l in 1 o w - n o i s e - amp 1 i f i e r , o s c i l l a t o r , a n d c o n ­

2n2857

Abstract: 2n2857 UHF transistor common base amplifier
Contextual Info: 2N2857 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-72 packaged UHF Transistor • 1.6 GHz Current-Gain Bandwidth Product @ 5mA IC • Maximum Unilateral Gain = 13 dB typ @ 500 MHz 2 1 3 4 1. Emitter 2. Base 3. Collector 4. Case

Contextual Info: 2N2857UB Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor also available in commercial

Contextual Info: SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857CSM • High Current Gain-Bandwidth Product fT • Hermetic Ceramic Surface Mount Package • Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)

IC 7476

Abstract: features of ic 7476 applications IC 7476 of Ic 7476 transistor 076 7476 ic
Contextual Info: 2N2857XCSM HIGH FREQUENCY NPN TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm inches 1.02 ± 0.10 (0.04 ± 0.004) 0.51 ± 0.10 (0.02 ± 0.004) 0.31 rad. (0.012) • SILICON NPN TRANSISTOR

2N2857C1

Abstract: LE17 MIL-PRF19500 QR217
Contextual Info: SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857C1 • High Current Gain-Bandwidth Product fT • Hermetic Ceramic Surface Mount Package • Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)

TRANSISTOR 117a

Contextual Info: Silicon Bipolar Low Noise Microwave Transistors 2N2857 Case Style TO-72 CAN 509 Features • High Gain (19dB Typical @ 450 MHz) • Low Noise Figure At Low Ic • Gold Metalization • Useful To 700 MHz • Can be Screened to JANTX, JANTXV Equivalent Levels

2N3839

Abstract: 2N2857
Contextual Info: Data Sheet 2N2857 2N3839 C e n t r a l M S I L I C O N S M A L L S I G N A L RF TRA N S ISTOR; Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 J E D E C T O - 7 2 CASE Manufacturers of World Class Discrete Semiconductors

Contextual Info: SILICON RF SMALL SIGNAL NPN TRANSISTOR 2N2857 • High Current Gain-Bandwidth Product fT • Hermetic Ceramic Surface Mount Package • Designed For High Gain, Low Noise Amplifier, Oscillator and Mixer Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)

2N2857

Abstract: 2N2857 JANTXV
Contextual Info: 2N2857 Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857 is a military qualified silicon NPN transistor also available in commercial version ,

2N2857 semicoa

Abstract: 2N2857 2C2857 2N2857UB SD2857 SD2857F SQ2857 SQ2857F 2N2857 DIE chip type geometry Semicoa
Contextual Info: Data Sheet No. 2C2857 Generic Packaged Part: Chip Type 2C2857 Geometry 0011 Polarity NPN 2N2857 Chip type 2C2857 by Semicoa Semiconductors provides performance similar to these devices. Part Numbers: 2N2857, 2N2857UB, SD2857, SD2857F, SQ2857, SQ2857F Product Summary:

2N2857 MOTOROLA

Abstract: DGMOS 2n2857
Contextual Info: MOT O ROL A SC XSTRS/R F 4bE D t.3b?2S4 oamoeM MOTOROLA ? mOTb " F 3 I - I S SEMICONDUCTOR TECHNICAL DATA 2N2857 The RF Line NPN SILICON RF SMALL-SIGNAL TRANSISTORS NPN SILICON RF SMALL-SIGNAL TRANSISTORS . . . designed prim arily for use in high-gain, low-noise am plifier, oscil­