2N3839 Search Results

Contextual Info: General Transistor Corporation SMALL SIG N A L TRANSISTORS • ■ ■ NPN TRANSISTORS FOR RF APPLICATIONS VCEO V M/OtNUH RATINI3S le (mA) Ptol (mW) 2N91B 2N2857 2N3600 2N3839 15 15 15 15 50 40 50 40 200 200 200 200 2N5031 2N5032 2N5179 2N5842 10 10 12 10

2N2857

Abstract: 2n3839 RF Transistors
Contextual Info: 2N2857 2N3839 NPN SILICON RF TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N2857 and 2N3839 are silicon NPN RF transistors designed for VHF/UHF amplifier, oscillator and converter applications. MARKING: FULL PART NUMBER

2N3839

Abstract: 2N2857
Contextual Info: Data Sheet 2N2857 2N3839 C e n t r a l M S I L I C O N S M A L L S I G N A L RF TRA N S ISTOR; Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 J E D E C T O - 7 2 CASE Manufacturers of World Class Discrete Semiconductors

2N3293

Abstract: 2N3294 2n4957 40244 2N5851 2n3287 2N335 2n3600 2N5852 2N2857
Contextual Info: U-H-F AMPLIFIERS Cont’d Maximum Ratings Type NPN PNP 2N3292 2N3293 2N3294 2N918 2N3478 2N2857 2N3839 2N3600 2N5851 2N5852 2N4252 2N4253 2N3287 2N3288 2N3932 2N4874 2N3308 2N4875 2K33Q7 2N3933 2N5181 2N5182 2N4934 2N4957 2N4958 2N4959 2NS829 2N4259 2N4876

Contextual Info: 2N3839 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)15 V(BR)CBO (V)30 I(C) Max. (A)40m Absolute Max. Power Diss. (W)200m Minimum Operating Temp (øC) Maximum Operating Temp (øC)175þ I(CBO) Max. (A).01uØ @V(CBO) (V) (Test Condition)

2N2857

Abstract: transistor 2n 3839 Scans-001060 2857 transistor 2857 2N3839
Contextual Info: 2N2857 2N3839 SILICON PLANAR NPN V H F/U H F AMPLIFIERS T he 2N 2857 and 2N 3 8 3 9 are silico n planar e p ita x ia l NPN tra n sisto rs in Jedec T O -7 2 m etal case, intended fo r a m p lifie r, o s c illa to r and c o n v e rte r a p p lica tio n s up t o 5 0 0 M H z. T he

2N3839

Abstract: 2N2857 2n3839 rca VHF transistor amplifier circuit
Contextual Info: File No. 229 0Q Q BÆ I Power Transistors Solid State Division _ 2N3839 RCA-2N3839* is a double-diffused epitaxial planar transistor of the silicon n-p-n type. It is extremely use­ ful in low-noise-amplifier, oscillator, and converter applications at frequencies up to 500 MHz in the common-emitter configuration, and up to 1200 MHz, in the

2N2857

Abstract: 2N3839
Contextual Info: JUnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. Oats Sheet TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N2857 2N3839 SILICON SMALL SIGNAL RF TRANSISTOR! JEDEC TO-72 CASE DESCRIPTION The , SEMICONDUCTOR 2N2857, 2N3839 types are NPN Silicon Small Signal Transistors

2N3294

Abstract: 2N335 40240 2N337 2n3600 2N2857 2N3292 2N3293 2N3478 2N3839
Contextual Info: U-H-F AMPLIFIERS Cont’d Maximum Ratings Type NPN PNP 2N3292 2N3293 2N3294 2N918 2N3478 2N2857 2N3839 2N3600 2N5851 2N5852 2N4252 2N4253 2N3287 2N3288 2N3932 2N4874 2N3308 2N4875 2K33Q7 2N3933 2N5181 2N5182 2N4934 2N4957 2N4958 2N4959 2NS829 2N4259 2N4876

2N28

Abstract: 2N2857 2N3839
Contextual Info: 2N3839 I The RF NPN SILICON RF SMALL-SIGNAL . . . designed lator, primarily and mixer for use in high-gain, applications. I Line TRANSISTORS low-noise amplifier, Can also be used in UHF oscil- converter applications. 0.050 Total Device Dissipation @ TA = 25°C

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N4122

Abstract: 2N4121 2N4134 2n3771 2N4080 2N4135 2N3713 2N3714 2N3715 2N3716
Contextual Info: 02 58354 ADVANCED SEMICO ND UC TOR_ _ ADVANCED S E M I C O N D U C T O R - 05 DE I 0 E S Ô 3 S 4 82 D 00044 DDDDD44 □ D 7"w- s 2— o S I L I C O N _« _ _ THAPJSISTOfiS Pd DEVICE TYPE NO. 2N3713 2N3714 2N3715 2N3716 2N3734 2N3735 2N3740 2N3741

2N2950

Abstract: TRANSISTOR 2N2950 2N2857 2N3137 2n3600 2N5032 Transistor 2N3866 2N3839 2N5031 2N5179
Contextual Info: General Transistor Corporation SMALL SIG N A L TRANSISTORS WÊÊÊM NPN TRANSISTORS FOR RF APPLICATIONS TRANS FREQ. t r i le U UtNUM RATINI3S dB) NOISE FIGURE MF AND le {ÿf (mA) 5 3.8 3.0 3.0 5 5 5 25 1400 1200 10 10 600 800 1000 1000 1000 750 800 800 1200

UHF UHF Transistors

Abstract: 2N2857 2N3478 2N998 2n5179 2N2865 2N3839 2N917 2N917A 2N918
Contextual Info: Small Signal NPN Transistors TO-72 Case TYPE NO. DESCRIPTION VCBO VCEO VEBO ICBO @ VCB V (V) (V) µA) (µ MIN MIN MIN MAX hFE @ IC @ VCE (V) (mA) MIN (V) MAX VCE (SAT) @ IC (V) (mA) MAX fT Cob (MHz) *Ccb (pF) MIN MAX 2N917 RF/IF OSCILLATOR 30 15 3.0 0.001

MRF965

Abstract: 2N5109 motorola 2N5179 motorola 2N5179 high gain PNP RF TRANSISTOR BFY90 MOTOROLA MRF586 2n6603 transistor MRF542 RF 2N3866
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. Q P L types with JAN, JTX and JT X V processing levels are available as well as Hi Rei pro­

2N3866 MOTOROLA

Abstract: 2N3866 MOTOROLA s parameters 2n5179 10 GHz PNP transistor npn UHF transistor 2N5179 2N2857 MOTOROLA MOTOROLA 2N5179 2n2857 RF POWER TRANSISTOR NPN, motorola 2n4957
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

2SC288a

Abstract: MMBR2857 TP390 TP393 S763T 40518 BF378 2N5652 s763 72 sot 23
Contextual Info: RF LOW-POWER SILICON NPN Item Number Part Number V BR CEO -5 10 15 20 25 30 35 40 2N3600 2SC251 2SC251A 2SC251A 2SC252 2SC252 2SC253 BFX73 2N2729 M90 BF689 BF689 BFS17 2SC387 AG-TM 2N3833 2N3833 2N3834 2N3834 2N3834 2N3835 2N3835 K2115 ST2120 MMBR2857 40517

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

UHF UHF Transistors

Abstract: 2N3839
Contextual Info: Small Signal NPN Transistors TO-72 Case TYPE NO. DESCRIPTION VCBO VCEO VEBO ICBO @ VCB hFE V (V) (V) µA) (µ MIN MIN MIN MAX RF/IF OSCILLATOR 30 15 3.0 0.001 2N917A RF/IF OSCILLATOR 30 15 3.0 - 2N918 RF/IF OSCILLATOR 30 15 3.0 0.01 2N998 DARLINGTON 100

cs9011j

Abstract: MPS151 PN5180 MPS4424 BC5608 8c527-25 2N3304 BC5568 PN2897 MPS9633C
Contextual Info: CRIMSON SEMICONDUCTOR INC TT DE | 5 5 1 4 0 ^ 2 5 1 4 0 9 6 C R I M S O N S E M I C O N D U C T O R INC D T 99D 00293 DEVICF TYPE PACKAGE By.CEO BVCBO BVEBO ICBO @ VCB IV I M iN IV ! M .N . UN i- A l M Ah |V D0D0ET3 0 6 / - HFE @ VC & iC M Ah .V t—"A •

2N3866 MOTOROLA s parameters

Abstract: 2N3866 MOTOROLA 2N2857 MOTOROLA 145A-09 MOTOROLA SELECTION mrf237 MRF229 MRF536 2N3553 motorola Transistor 2N3866 TO205AD
Contextual Info: characterized with y or s parameters; and in addition, there are non-saturated switching characteristics, low power driver spec­ ifications, and noise figure limits. QPL types with JAN, JTX and JTXV processing levels are available as well as Hi Rei pro­

MRF306

Abstract: 2N3866 2N6166 2n5643 transistors for oscillators uhf mrf313a 2N5641 MRF905 2n3866 211 2N5636
Contextual Info: f Device Type ^ Pout O utput Power Watts g PE Power Gain dB Min. V cc Supply Voltage Volts Package 10 10 8.4 8.2 7.6 6.0 28 28 28 28 28 28 TO-39 TO-39 144B-04 145A-07 145A-07 211-10 A 10 10 16 Typ 16 (Typ) 12 6.2 11 5.7 9.0 10 4.6 6.0 6.0 8.0 8.0 28 28 28