2N5641
Abstract: 2n5643 2N5642 2N5641 2N564 SD1220 118-136-MHz 2n564i fa 5542 SD1224 M104
Text: ORDER CODE BRANDING SD1220 2N5641 SD 1222-10 2N5642 SD1224 2N5643 DESCRIPTION These devices are , optimum load mis match capability. Device Package 2N5641 .380 Narrow 4LSTUD 2N5642 .380 4LSTUD 2N5643 , 2 emitter 4 emitter Symbol Parameter 2N5641 2N5642 2N5643 Unit VCBO Collector to Base Voltage 65 , 2N5641 2N5642 2N5643 Rl'i(i-c) Junction-case Thermal Resistance 11.7 5.8 2.9 °c/w March 1989_V5 67 2N5641 /2N5642/2N5643 ELECTRICAL CHARACTERISTICS (Tcase = 25"C) STATIC Symbol 2N5641
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2N564i
2N5642/2N5643
230MHz
175MHz
SD1220
2N5641
2N5642
SD1224
2N5643
118-136MHz
2N5641
2n5643
2N5642
2N5641 2N564
118-136-MHz
2n564i
fa 5542
M104
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TRANSISTOR BC 545
Abstract: NPN transistor SST 117 transistor npn Epitaxial Silicon SST 117 2N5641 bi 370 transistor e transistor fn 155 2n5642 bi 370 transistor NPN/TRANSISTOR BC 545 2N5643
Text: ' Tel: ,215) 631-9840 2N5641 2N5642/2N5643 RF & MICROWAVE TRANSISTORS 130.230MHz FM MOBILE , 1 coilactör 2 omittor 2N5641 6S 35 4.Q 1.0 15 200 2NB642 ss 35 4.0 3,0 30 200 - 6 5 to 150 i I ' i , 2N5641 11.7 2N5642 5.S 2N5643 2,9 »cm I Rin(j-ïj I Junctksn-casB Thermal Resistance Mansh , ) 2N5641 NETWORK IMPEDANCE AT TRANSISTOR TERMINALS t = 17SMHZ, P*t Watts 0.2 0,4 0.8 0.8 POUT Watts 58 , u tp jt vs Power Input sitasfts&is-ßi 2N5641 `2N5642/2N 5643 PACKAGE MECHANICAL DATA .380
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2N5641
2N5642/2N5643
230MHz
175MHz
SD120O
SDT224
2NS641
SD1222-10
2N5642
2N564
TRANSISTOR BC 545
NPN transistor SST 117
transistor npn Epitaxial Silicon SST 117
2N5641
bi 370 transistor e
transistor fn 155
2n5642
bi 370 transistor
NPN/TRANSISTOR BC 545
2N5643
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2N5641
Abstract: 2N5641 2N564 MT-72 transistor Pout 5W
Text: GAE GREAT AMERICAN ELECTROINCS 2N5641 Silicon NPN power VHF transistor 2N5641 is designed for use as an output driver or pre-driver stages of power amplifiers in communication equipment (Mobile and Aircraft). Output Power: Frequency Range: Voltage: Package Type: Common Emitter Configuration Emitter Ballasting Aluminum Metalization High Levels ofVSWR 5 Watt 50-200 Mhz 28 V MT-72 Electrical Characteristics (Tcase=40°C) SYMBOL TEST CONDITIONS MIN TYP MAX UNIT Pou, f0 = 175 MhzA/cc=28V/P|N =0.5W 40 W
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2N5641
2N5641
MT-72
D000D23
2N5641 2N564
MT-72
transistor Pout 5W
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PT8811
Abstract: PT8740 transistor pt4544 PT8828 RF Transistor S10-12 2N6095 SD1076 MRF510 MM1669 2N3563 REPLACEMENT
Text: BLX96 TH596 DM30-12BA SD1421 MRF238 SD1272 PT4556 SD1018 TPV597 TH597 2N6198 2N5641 BLX98 TH598 DM30P , -3 PT5750 2 N5636 2N4041 2N5635 40955 SD1272 BLY91A 2N5641 MM1551 2N5637 MRF619 SD 1088 PT5751 2N5637 , BLY94 SD1019-5 MM 1557 2N5641 MRF626 SD 1080-6 PT6680 2 N5636 2N4292 2N918 40971 SD1488 BLY97 2N5641 MM
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BAM20
2N5642
B25-12
2N6082
2N6084
MSC2304
TH2304
PT8809
SD1134
2N5689
PT8811
PT8740
transistor pt4544
PT8828
RF Transistor S10-12
2N6095
SD1076
MRF510
MM1669
2N3563 REPLACEMENT
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transistor 2N5
Abstract: 2N5641 2000C 2N5642 2N5643 MT-72 2n56
Text: s G SâTHOMSON QSC D | 7131237 OOOOMA T 0 T-Ti-K . SOLID STATE MICROWAVE 2N5641 2N5642 THOMSON-CSF COMPONENTS CORPORATION 21\| 5643 Montgomeryville, RA 18936 â (215) 362-8500 â TWX 510-661-7299 DESCRIPTION: 7 W/20 W/40 W, 28 V, VHF POWER TRANSISTOR These SSM devices are epitaxial silicon , Characteristic 2N5641 2N5642 2N5643 V^BO Collector to Base Voltage VpgQ Collector to Emitter Voltage VggQ , SâTHOMSON G5C D I 7151237 ODQOin 1 J ° 33 * 2N5641 - EFFICIENC^^â" - POUT - // =CJT TUNED
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2N5641
2N5642
2N5643
transistor 2N5
2000C
2N5642
2N5643
MT-72
2n56
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MRF245
Abstract: SD1076 CM45-12A BLY22 sd1238 BLX66 MM1669 PT8828 BLY94 PT9780
Text: MRF238 SD1272 PT4556 SD1018 TPV597 TH597 2N6198 2N5641 BLX98 TH598 DM30P SD1530 MRF244 SD1416 PT4570 SD , 2N5641 MM1551 2N5637 MRF619 SD 1088 PT5751 2N5637 2N4072 SD 1300 40967 2N5944 BLY92A 2N5642 MM1552 , 1434 PT6670 2N5637 2N4128 2N6082 40970 SD 1488 BLY94 SD1019-5 MM 1557 2N5641 MRF626 SD 1080-6 PT6680 2 N5636 2N4292 2N918 40971 SD1488 BLY97 2N5641 MM 1558 2N5642 MRF627 SD 1080-7 PT6681 2N5636 2 N4293
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XO-72
O-117
02N6082
BM80-12
SD1416
MM1601
MRF631
MRF245
SD1076
CM45-12A
BLY22
sd1238
BLX66
MM1669
PT8828
BLY94
PT9780
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PT8740
Abstract: PT8811 replace for 2N918 PT9780 mrf245 THOMSON-CSF PRODUCTS transistor pt4544 PT9788 PT8710 PT8828
Text: 2N5641 BLX98 TH598 DM30P SD1530 MRF244 SD1416 PT4570 SD 1005 TPV598 TH598 2N6199 2N5642 BLY22 SD1012 , SD1429-3 PT5750 2 N5636 2N4041 2N5635 40955 SD1272 BLY91A 2N5641 MM1551 2N5637 MRF619 SD 1088 PT5751 , 1488 BLY94 SD1019-5 MM 1557 2N5641 MRF626 SD 1080-6 PT6680 2 N5636 2N4292 2N918 40971 SD1488 BLY97 2N5641 MM 1558 2N5642 MRF627 SD 1080-7 PT6681 2N5636 2 N4293 2N918 40972 2N5913 BM45-12 SD 1428 MM1559
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T8710
SD1238
2N5126
2N918
2N5642
BM100-28
MM1603
MRF633
SD1145
PT8717
PT8740
PT8811
replace for 2N918
PT9780
mrf245
THOMSON-CSF PRODUCTS
transistor pt4544
PT9788
PT8710
PT8828
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2005 - 2n5641
Abstract: No abstract text available
Text: 2N5641 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 2N5641 is Designed for 28 V Large Signal Class C Amplifier Applications up to 175 MHz. FEATURES INCLUDE: · Emitter Ballasting · Gold Metalization · 3/8" SOE Stud Package PACKAGE STYLE .380" 4L STUD MAXIMUM RATINGS IC VCE VCB PDISS TJ TSTG 1.0 A 35 V 65 V 15 W @ TC = 25 OC -65 OC to + 200 OC -65 OC to + 150 OC 1 = COLLECTOR 2 & 4 = EMITTER 3 = BASE CHARACTERISTICS SYMBOL BVCES BVCEO BVEBO ICBO hFE COB PG C TC = 25 C
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2N5641
2N5641
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MRF245
Abstract: PT8828 BFY70 J0303 CM-501 sd1238 2N6096 RF Transistor S10-12 2N4932 BLY94
Text: MRF238 SD1272 PT4556 SD1018 TPV597 TH597 2N6198 2N5641 BLX98 TH598 DM30P SD1530 MRF244 SD1416 PT4570 SD , 2N5641 MM1551 2N5637 MRF619 SD 1088 PT5751 2N5637 2N4072 SD 1300 40967 2N5944 BLY92A 2N5642 MM1552 , 1434 PT6670 2N5637 2N4128 2N6082 40970 SD 1488 BLY94 SD1019-5 MM 1557 2N5641 MRF626 SD 1080-6 PT6680 2 N5636 2N4292 2N918 40971 SD1488 BLY97 2N5641 MM 1558 2N5642 MRF627 SD 1080-7 PT6681 2N5636 2 N4293
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CB-403)
CB-410)
CB-303)
CB-4111
CB-306)
CB-407)
1CB-404)
CB-408)
CB-409)
52N6082
MRF245
PT8828
BFY70
J0303
CM-501
sd1238
2N6096
RF Transistor S10-12
2N4932
BLY94
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SD1076
Abstract: MRF245 2n918 PT8811 BLY94 pt8710 PT9788 PT9780 SD1238 MRF510
Text: MRF238 SD1272 PT4556 SD1018 TPV597 TH597 2N6198 2N5641 BLX98 TH598 DM30P SD1530 MRF244 SD1416 PT4570 SD , 2N5641 MM1551 2N5637 MRF619 SD 1088 PT5751 2N5637 2N4072 SD 1300 40967 2N5944 BLY92A 2N5642 MM1552 , 1434 PT6670 2N5637 2N4128 2N6082 40970 SD 1488 BLY94 SD1019-5 MM 1557 2N5641 MRF626 SD 1080-6 PT6680 2 N5636 2N4292 2N918 40971 SD1488 BLY97 2N5641 MM 1558 2N5642 MRF627 SD 1080-7 PT6681 2N5636 2 N4293
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BAM20
2N5642
B25-12
2N60822N6082
BM80-12
SD1416
MM1601
MRF631
SD1144
PT8549
SD1076
MRF245
2n918
PT8811
BLY94
pt8710
PT9788
PT9780
SD1238
MRF510
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2N918
Abstract: SD1076 PT8811 MRF245 RF Transistor S10-12 PT8828 PT8710 sd-1076 PT9780 transistor pt4544
Text: BLX96 TH596 DM30-12BA SD1421 MRF238 SD1272 PT4556 SD1018 TPV597 TH597 2N6198 2N5641 BLX98 TH598 DM30P , -3 PT5750 2 N5636 2N4041 2N5635 40955 SD1272 BLY91A 2N5641 MM1551 2N5637 MRF619 SD 1088 PT5751 2N5637 , BLY94 SD1019-5 MM 1557 2N5641 MRF626 SD 1080-6 PT6680 2 N5636 2N4292 2N918 40971 SD1488 BLY97 2N5641 MM
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PDF
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BAM20
22N6082
BM80-12
SD1416
MM1601
MRF631
SD1144
PT8549
SD1214
N5054
2N918
SD1076
PT8811
MRF245
RF Transistor S10-12
PT8828
PT8710
sd-1076
PT9780
transistor pt4544
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mrf245
Abstract: SD1416 PT9788 PT8710 2N5642 BLY94 PT8811 BLX66 PT8740 2N4072
Text: MRF238 SD1272 PT4556 SD1018 TPV597 TH597 2N6198 2N5641 BLX98 TH598 DM30P SD1530 MRF244 SD1416 PT4570 SD , 2N5641 MM1551 2N5637 MRF619 SD 1088 PT5751 2N5637 2N4072 SD 1300 40967 2N5944 BLY92A 2N5642 MM1552 , 1434 PT6670 2N5637 2N4128 2N6082 40970 SD 1488 BLY94 SD1019-5 MM 1557 2N5641 MRF626 SD 1080-6 PT6680 2 N5636 2N4292 2N918 40971 SD1488 BLY97 2N5641 MM 1558 2N5642 MRF627 SD 1080-7 PT6681 2N5636 2 N4293
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OCR Scan
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PDF
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SD2N6082
BM80-12
SD1416
MM1601
MRF631
SD1144
PT8549
SD1214
N5054
2N3553
mrf245
PT9788
PT8710
2N5642
BLY94
PT8811
BLX66
PT8740
2N4072
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2n5641
Abstract: 2n5641 motorola
Text: MOTOROLA TECHNICAL DATA SEMICONDUCTOR 2N5641 T he R F Line 7.0 W - 175 MHz RF POWER TRANSISTO R NPN SILICO N RF POWER TRANSISTOR N P N S IL IC O N . . . designed p rim a rily fo r w id eb and large-signal a m p lifie r stages in the 1 2 5 -1 7 5 M Hz fre q u e n c y range. · S p e cifie d , 2.54 3-35 20" CASE 144B-05 MOTOROLA RF DEVICE DATA 2-64 2N5641 · E L E C T R IC A L C H , T u rn » # 1 6 A W G , 1 4 " I.D . 0 .2 2 m H MOTOROLA RF DEVICE DATA 2-65 2N5641 F IG U R E
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2N5641
2n5641
2n5641 motorola
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2n5641
Abstract: No abstract text available
Text: MOT OROL A SC (XSTRS/R F) 4bE 1 > b3b?2S4 OtnMOßb 1 ^ 7 I f l OT b MOTOROLA TECHNICAL DATA SEMICONDUCTOR 3 3 - 0 1 2N5641 The RF Line 7.0 W - 175 MHz R F PO W ER T R A N S IS T O R N PN S IL IC O N R F P O W E R T R A N S IS T O R NPN SILIC O N . . . , S - o l 2N5641 MOT OR OL A SC (XSTRS/R F) 4bE D b3fci72S4 ODTHGfl? 1 MOTb · E L E C T R , 22 m H MO TO RO LA RF D E V IC E DATA ~ 5 3 - 0 1 2N5641 MOTOROLA SC (XSTRS
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2N5641
b3b7254
2n5641
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2n5841
Abstract: No abstract text available
Text: am m tm Bf- P roaucth M ic m m s e m i 2N5641 2N5642/2N5643 140 C o m m e r c e D r iv e M o n t g o m e r y v ille , P A 1 8 9 3 6 Te!: (2 1 5 ) 6 3 1 -S 8 4 0 RF & MICROWAVE TRANSISTORS 130-.230MHz FM MOBILE APPLICATIONS FREQUENCY VOLTAGE HIGH PO W ER OUT HiGH PO W ER GAIN EFFICIENCY CLASS C TRANSISTORS COMM ON m 2BV 7 TO 40 y\ , V T T fcR .300 , CHARACTERISTICS S T A T IC 2N5641 Syrobb) Jest Conditions ÃN564? Min. i ! VP ; Max i Mm ; Typ. Ã
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2N5641
2N5642/2N5643
230MHz
415TUD
2N5643
iS-40
2n5841
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MRF245
Abstract: CM45-12A BFS51 SD1451 J03055 2N6197 BLY22 SD1076 PT8740 PT8811
Text: MRF238 SD1272 PT4556 SD1018 TPV597 TH597 2N6198 2N5641 BLX98 TH598 DM30P SD1530 MRF244 SD1416 PT4570 SD , 2N5641 MM1551 2N5637 MRF619 SD 1088 PT5751 2N5637 2N4072 SD 1300 40967 2N5944 BLY92A 2N5642 MM1552 , 1434 PT6670 2N5637 2N4128 2N6082 40970 SD 1488 BLY94 SD1019-5 MM 1557 2N5641 MRF626 SD 1080-6 PT6680 2 N5636 2N4292 2N918 40971 SD1488 BLY97 2N5641 MM 1558 2N5642 MRF627 SD 1080-7 PT6681 2N5636 2 N4293
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XO-72
O-117
2N6082
BM80-12
SD1416
MM1601
MRF631
MRF245
CM45-12A
BFS51
SD1451
J03055
2N6197
BLY22
SD1076
PT8740
PT8811
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9033 transistor
Abstract: PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811
Text: SD1272 PT4556 SD1018 TPV597 TH597 2N6198 2N5641 BLX98 TH598 DM30P SD1530 MRF244 SD1416 PT4570 SD 1005 , 2N5641 MM1551 2N5637 MRF619 SD 1088 PT5751 2N5637 2N4072 SD 1300 40967 2N5944 BLY92A 2N5642 MM1552 , 1434 PT6670 2N5637 2N4128 2N6082 40970 SD 1488 BLY94 SD1019-5 MM 1557 2N5641 MRF626 SD 1080-6 PT6680 2 N5636 2N4292 2N918 40971 SD1488 BLY97 2N5641 MM 1558 2N5642 MRF627 SD 1080-7 PT6681 2N5636 2 N4293
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PDF
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302N6082
BM80-12
SD1416
MM1601
MRF631
SD1144
PT8549
SD1214
N5054
2N3553
9033 transistor
PT8828
2N4932
PT8740
BLW27
BLX66
sd1315
BLY94
MM1669
PT8811
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BFY70
Abstract: PT8828 CM45-12A THB598 PT8811 BLY22 sd1451 MRF245 PT8710 PT9780
Text: MRF238 SD1272 PT4556 SD1018 TPV597 TH597 2N6198 2N5641 BLX98 TH598 DM30P SD1530 MRF244 SD1416 PT4570 SD , 2N5641 MM1551 2N5637 MRF619 SD 1088 PT5751 2N5637 2N4072 SD 1300 40967 2N5944 BLY92A 2N5642 MM1552 , 1434 PT6670 2N5637 2N4128 2N6082 40970 SD 1488 BLY94 SD1019-5 MM 1557 2N5641 MRF626 SD 1080-6 PT6680 2 N5636 2N4292 2N918 40971 SD1488 BLY97 2N5641 MM 1558 2N5642 MRF627 SD 1080-7 PT6681 2N5636 2 N4293
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2N6082
BM80-12
SD1416
MM1601
MRF631
SD1144
PT8549
SD1214
N5054
2N3553
BFY70
PT8828
CM45-12A
THB598
PT8811
BLY22
sd1451
MRF245
PT8710
PT9780
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2N5641
Abstract: No abstract text available
Text: JBe-tnl-donduoioi Lpioducti, Una. fc/ 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: (973) 376-2922 (212) 227-6005 FAX: (973) 376-8960 2N5641 The RF Line 7.0 W - 175MHz RF POWER TRANSISTOR NPN SILICON NPN SILICON RF POWER TRANSISTOR . designed primarily for wideband large-signal amplifier stages in the 125-175 MHz frequency range. ⢠Specified 28 Volt, 175 MHz , 2N5641 â¢ELECTRICAL CHARACTERISTICS (Tc » 25°C unleiiotherwiie noted.) Characttrittic I
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2N5641
175MHz
-30Vdc,
2N5641
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3570 1301
Abstract: MRF245 PT8828 ad 40282 PT9780 CM45-12A BLX66 pt8710 2N4932 2N5913
Text: 2n5641 blx98 th598 dm30p sd1530 mrf244 sd1416 pt4570 sd 1005 tpv598 th598 2n6199 2n5642 bly22 sd1012 , sd1429-3 pt5750 2 n5636 2n4041 2n5635 40955 sd1272 bly91a 2n5641 mm1551 2n5637 mrf619 sd 1088 pt5751 , 1488 bly94 sd1019-5 mm 1557 2n5641 mrf626 sd 1080-6 pt6680 2 n5636 2n4292 2n918 40971 sd1488 bly97 2n5641 mm 1558 2n5642 mrf627 sd 1080-7 pt6681 2n5636 2 n4293 2n918 40972 2n5913 bm45-12 sd 1428 mm1559
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2N918
BFP92
cb-233
3570 1301
MRF245
PT8828
ad 40282
PT9780
CM45-12A
BLX66
pt8710
2N4932
2N5913
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2N6197
Abstract: rf power transistors 2N3924 2N2876 2N4127 2N4073 2N6198 2N5698 MT 59 2N5687
Text: -39 2N6080 175 4.0 12 12.5 MT-72 2N5423 175 5.0 6 13.5 TO-60 2N3926 175 7.0 5.5 13.6 TO-60 2N5641 175 7.0
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2N5687
2N5847
MT-72
2N5689
O-117
2N4932
2N5993
2N4933
2N6197
rf power transistors
2N3924
2N2876
2N4127
2N4073
2N6198
2N5698
MT 59
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MRF306
Abstract: 2N3866 2N6166 2n5643 transistors for oscillators uhf mrf313a 2N5641 MRF905 2n3866 211 2N5636
Text: ( Device Type pout Output Power gPE Power Gain dB Min. VCC Supply Voltage Volts Package 106-175 MHz, VHF AM TRANSISTORS f 2N3866 1.0 10 28 TO-39 N 2N3553 2.5 10 28 TO-39 2N5641 7.0 8.4 28 144B-04 2N 5642 20 8.2 28 145A-07 2N5643 40 7.6 28 145A-07 ^ 2N6166 100 6.0 28 211-10 J 225-400 MHz, UHF AM TRANSISTORS MRF509 1.0 10 28 207A-01 2N3866 1.0 10 28 TO-39 MRF313 1.0 16 (Typ) 28 305-01 MRF313A 1.0 16 (Typ) 28 305A-01 MRF517A 2.0 12 28 244-04 2N5635 2.5 6.2 28 144B-04
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2N3866
2N3553
2N5641
144B-04
45A-07
2N5643
2N6166
MRF509
07A-01
MRF306
transistors for oscillators uhf
mrf313a
MRF905
2n3866 211
2N5636
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motorola 2N5643
Abstract: 2N3553 motorola TP9386 MRF342 "cross reference" VHF Transistors PT9733 221A-04 mrf492 cross reference mrf342 mrf340
Text: . Power Gain dB/MHz 0JC °C/W Package/Style V cc = 28 Volts 2N3553 2N5641 MRF340 2N5642 MRF342
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MRF475
MRF497
MRF492
21A-04/1
21A-04/2
28-vo
2N3553
2N5641
MRF340
2N5642
motorola 2N5643
2N3553 motorola
TP9386
MRF342 "cross reference"
VHF Transistors
PT9733
221A-04
mrf492 cross reference
mrf342
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MRF229
Abstract: 5A09 2N3553 motorola Transistor 2N3866 MRF317 motorola mrf MRF high power transistor MRF314A MRF340 transistor MRF317
Text: / TG-220AB 2N3866 1.0 0.1 10 28 TQ-205AD 2N3553 2.5 0.25 10 i 28 TO-205AD 2N5641 7.0 1.0 3.4 28 144B
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O-205AD
O-205
44B-05
45A-09
21A-02
O-220AB)
30-20CI
28-vo
MRF314/15/16/17
MRF340
MRF229
5A09
2N3553 motorola
Transistor 2N3866
MRF317
motorola mrf
MRF high power transistor
MRF314A
transistor MRF317
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Not Available
Abstract: No abstract text available
Text: information herein are subject to change without notice. MOTOROLA RF DEVICE DATA 2N5641 2-825
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TPV695A
TV05001
2N5641
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