2N3733 Search Results

MRF660

Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040

2N4041

Abstract: 2N4127 2N3924 2N5016 2N5102 2N5108 2N3553 2N3632 2N3733 2N5421
Contextual Info: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108

SRK-2001

Abstract: 2N3375 srf transistor SRK2002 SRF-1001 SRF1002 2N4440 2N2876 solitron transistors 2N5016
Contextual Info: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108

2N3733

Contextual Info: i, Dnc. TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3733 NPN silicon transistor designed for amplifier, frequency multiplier, and oscillator applications. MAXIMUM RATINGS <T* • 25°C units*otherwise noud)

2N3632

Abstract: 2N3375 2N3373
Contextual Info: , LJnc. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 2N3375 2N3632/2N3733 RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND 130 TO 400MHz FREQUENCY 28V VOLTAGE 2.5TO13.5W POWER OUT HIGH POWER GAIN

MC 150 transistor

Abstract: 2N3733 rca 2n3733 RCA-2N3733 rca rf transistor uhf transistor amplifier "MC 150" transistor
Contextual Info: - File No. 72 RF P o w er T ran sisto rs Solid State Division 2N3733 10-W, 4 0 0 -M e Silicon N-P-N O v e rla y T ra n s is to r For Large-Signal, High-Power V H F /U H F Applications IV '-# Features' • High power output, unneutraiized Class C amplifier:

2n3733

Abstract: "vhf,uhf transistor" 4 watt VHF 100-400MHz
Contextual Info: GAE GREAT AMERICAN ELECTROINCS 2N3733 Silicon NPN high power VHF/UHF transistor 2N3733 is intended for class “C” amplifier, auto-oscillator or frequency multiplier circuits in the 100-400 Mhz region. Output Power: Output Power: Frequency Range: Voltage:

Contextual Info: J UJ nitron sem iconductors Semitronics Corp. S 2 m www.DataSheet.in silicon transistors UHF/VHF power transistors 7~~3 7 ~ 0 / NPN type « Rttad Breakdown V o ttaiM V V V CB CB EB V CE 65 6b :^ N 3 e 3 2 ] 65 : 2N3733 6b 40 40 40 40 4.0 4.0 4.0 4.0 28 28

2ND55

Abstract: 2N828 2n4933 *423 pnp 2N2482 2n711 2N3733 2N3866 2N401 MT72j
Contextual Info: discrete devices J 1311IETUI1 sem iconductors Semitronics Corp. silicon transistors UHF/VHF power transistors J 7 - Of NPN type « Rated Breakdown VottaiM V V V CB CB EB VCE 65 6b :^N3e32] 65 : 2N3733 6b 40 40 40 40 4.0 4.0 4.0 4.0 28 28 28 28 : 2N3866 f ?N3S24

Contextual Info: Micmsemi 2N3375 2 N3632/2N3733 n i Montgomeryville, PA «1893 Tei: 215 6 3 1-9 840 ^M*X«VKÌÌ Ì>y RF & MICROWAVE TRANSiSTORS VHF-UHF CLASS C WIDE BAND « PR£QU£NCY !30 TO 400MHz « » « » 28V 2.5 TO 13.5W VOLTAGE: PO W sH O'J i HiGM POVVf:« GAiN

2N510B

Abstract: 1HW NPN 2NS71 2N3927 2NB642
Contextual Info: discrete devices J 1311IETUI1 sem iconductors Semitronics Corp. silicon transistors UHF/VHF power transistors J 7 - O f NPN type « Rated Breakdown V o ttaiM V V V CB CB EB V CE 65 6b :^ N 3 e 3 2 ] 65 : 2N3733 6b 40 40 40 40 4.0 4.0 4.0 4.0 28 28 28 28 : 2N3866

rf power transistors

Abstract: TO129 SC2600 2N5774 2N5646 MT-72 package 2N5645 2N5636 2N5924 2N4440
Contextual Info: 62 RF POWER TRANSISTORS TYPE NUMBER O PERATING FREQ UENC Y MHz M IN . POWER O UTPUT (WATTS) M IN . POWER G A IN (dB) VCC PACKAGE TYPE (VO LTS) 200-500 MHz RF POWER TRANSISTORS 2N 5645 2N 4440 2N 5636 470 400 400 4.0 5.0 7.5 6 4.7 7 12.5 28 28 MT-72 TO-60

TDA0161 equivalent

Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Contextual Info: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

BFS98

Abstract: BSV33 2N2475 2N4127 BFS96 BFS97 ZT180 ZT181 ZT182 ZT183
Contextual Info: SILICON TRANSISTORS Planar Medium Power and Switching p-n-p Maximum Ratings Type No. v CBO v CEO(sus) Ve b o Characteristics ^tot at 2 5°C amb. mW VCE(sat) ^FE Ic BO at max. volts h min. at >0 mA Outline Draw­ ing •c mA ■ b mA min. max. -1 5 0 -1 5 0

BCW23

Abstract: BFS98 ZTX107 2N3866 pin diagram 2N4127 2N3707 2N929 BC107 BC108 BCW20
Contextual Info: E-Line Transistors Applications C h a rt SILICON TRANSISTORS 10uA 100mA 1mA 10mA 100mA 1A The wide diversity of applications for which E-Une plastic encapsulated transistors are suitable is shown on the diagram. Additional types designed for more specialized purposes are listed

2N5483

Abstract: BD173 diode 2U 66 BD171 MJE30 MJE2360T
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE »T ON) Min (Hz) Max k)N Max (A) (8) •cBO r (CE)Mt Max (Ohmt) Toper Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . . . .10 . .

SD1470

Abstract: M168 2n3733 M111 M137 SD4013 M122 S042 SD1050 SD1060
Contextual Info: SILICON POWER TRANSISTORS VHF/UHF TRANSISTOR! Broadband, gold metallized transistors are characterized for UHF military communications and other wideband applications in the 100 - 500 MHz and 500 - 1000 MHz frequency ranges. Hi-rel screening and qualification testing

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

2N3632

Abstract: 2N3375 2N3733 transistor 2N3 SD1050 SD1075 SD1070 n3733
Contextual Info: *Lp L°2!£s ; MaEcmsem • f r if U lP rol gA 7 ^ f lll re s s P o w e re d b y T ec h no log y 140 Commerce Drive O Kl Q Q 7 C Montgomeryvme, PA 1893 ä H O O /O Tel: 215 631 9840 2 N 3 6 3 2 /2 N 3 7 3 3 RF & MICROWAVE TRANSISTORS VHF-UHF CLASS C WIDE BAND

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

2N3303

Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
Contextual Info: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any