2N3574 Search Results

Contextual Info: 2N3574 Transistors P-Channel JFET Military/High-RelN V BR DSS (V)25 V(BR)GSS (V)25 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)18m Maximum Operating Temp (øC)200þ I(GSS) Max. (A)600p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N3633

Abstract: TIP300 2N3609 2SA8140 MH0816 BCX53 Rohm 2sb631 hitachi 2N3566 2N3519 sk3025
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 >= 20 25 30 BCX53 MH0816 MH0818 MM4006 M0818 M0818 MM4031 ST4031 BCX53•6 ZTX552 BOW60 NS0204 2SA780AK BSV17·10 BSV17·10 BSV17·10 BSV17·6 BSV17·6 ~l,;X:';HU 35 40 45 50 2SA777 2SA777 B0418 2N6555 2SB1042M

TIS34

Abstract: tis58 TIS25 TIS59 2n2386 2N3328 TIS42 2N2499 2N3820 silec
Contextual Info: Field Effect Transistors No. £^ o 1 ! C S o w U “ S ilic o n P -C h a n n e l F ie ld Effect S ilic o n N -C h a n n el F ield Effect S ilic o n N -C h a n n el D ual M atched Field Effect Germ anium P Channel Field Effect V DG V !e mA p p p p p p 20 20

2SB641 r

Abstract: 2SB641 2N3633 2N3608 2N3588 BC381 2N3642 3SM diode LOW-POWER SILICON PNP 2N3524
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 2N1221 2S3030 2S3030 BCZ10 2S302 HA9048 HA9048 TP3S38 2N923 BCY28 5 10 ~~T~~8A 2S3230 A5T3S38 2N2696 2N2927 OC200 OC200 SS3638 TMPT3S38 15 20 ~~~~~8 MPS3638 A5T5226 2N5226 PN3638 2N2695 2N3638 2S323 2S323 25 30

IN5314

Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
Contextual Info: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)

2NB906

Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
Contextual Info: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

siliconix fet

Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility

TIS69 equivalent

Abstract: 2N3575 Germanium itt TIS59 TIS58 2N2386 TIS26
Contextual Info: IN T R O D U C T IO N This booklet is designed to simplify your selection of field effect transistors, which best meet your requirement. It is a comprehensive pocket size reference to your widest choice of field effect transistors. This broad selection is your best assurance of pin-pomting the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

2N3303

Abstract: T1S57 RJh 3347 2N3680 LA 4301 transistor ITT 2907 2N3792 2N3574 BF173 transistor bf 175
Contextual Info: Semiconductor Components Data Book 4 Transistors C o p y rig h t 1971 by T exas In s tru m e n ts L im ited . A ll R ig h ts R eserv ed . P rin te d in th e U n ite d K ingdom . T his b o o k , o r p arts th e re o f, m ay n o t be rep ro d u ce d in any

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

2SJ72BL

Abstract: PN4342 2SJ74GR 2SJ72GR 2SJ72-G 2sj74bl 2Sj72 2SJ74Y 2N4360 diode 20D
Contextual Info: JUNCTION FETs Item Number Part Number Manufacturer gt. V BA GSS loss (V) (A) Min (S) Max 6.0m 6.0m 6.0m 6.0m 8.0m 9.0m 9.0m 15m 15m 15m Him 15m 15m 15m 15m 15m 15m 15m 15m 30m 1.0m 1.0m 1.5m 1.5", 800u 1.0m 1.0m 2.2m 2.2m 3.0m 3.0m 1.3m 0.8m 800u 800u 1.0m

Contextual Info: LOW PO W E R FIELD EFFE C T T R A N S IS T O R S Type Number Case Style T O - Geometry •BVDgo or BVgss Ciss Max Min (V) (PF) Idss Vgs (off) Min Max (V) (nA) lgss Max (mA) Min Max Yfs Min Max (uMhos) 8.0 8.0 5.0 6.0 8.0 10.0 10.0 10.0 10.0 10.0 0.9 0.9

2n2386

Abstract: 2N2497 2N2498 2N2499 2N3380 FP22 to92 2N3330 2N3331 2N3382 2N3384
Contextual Info: *BVDgo or Type Case Geometry BFgss Number Style Min V TO2N2386 FP5.3 *20 5 TO2N2386A FP5.3 *20 5 TO2N2497 FP5.3 20 5 TO2N2498 FP5.3 20 5 TO2N2499 FP5.3 20 5 TO2N2500 FP5.3 20 5 TO2N2606 FP22.2 30 18 TO2N2607 FP22.2 30 18 TO2N2608 FP22.2 30 18 TO2N2609 FP22.2

2N2386

Contextual Info: raOEHyXgTr ÄTTÄIL LO W P O W E R FIELD EFFECT T R A N S IS T O R S m Typ« HvBttbsi \ U/AL [P O « ® ® ! •BVDgo or Ciss BVgss Style Min Max (T O - Geometry (pF) Cam (V) lgss Max (nA) Min Max Yfs Min Max (uMhos) 8.0 8.0 5.0 6.0 8.0 10.0 10.0 10.0

2N3993A

Abstract: FP22 to92 2N5265
Contextual Info: m it r o n Devices. Inc r a E i y j< S T P Ì KI I Type Number â ît â il ® LOW P O W E R FIELD E F F E C T T R A N S IS T O R S •BVDgo or BVgss Ciss Case Max Min Style (TO—) Geometry (V) (pF) U » ® Vgs (off) Min Max (V) (nA) © ! ! (?•=■© K I / Ä K 1K l ( I I I

2n2386

Abstract: 2N2497 2N2498 2N2499 2N2844 UC-40 2N2606 2N3331 2N3380 2N3575
Contextual Info: [^ © UKST (SÄT/m L O W P O W E R FIELD E F F E C T T R A N S I S T O R S Type Number Case Style ( T O - Geometry •BVDgo or BVgss Ciss Max Min (V) (pF) _ 20.0 — — — — — — — — — 13.0 33.0 1.0 2.2 1.0 60 180 540 1800 100 — — —

2N3633

Abstract: transitron 2N3596 INDUSTRO 2n3605 transitron 2n3605 TEXAS 2N3583 philco-ford 2N3609
Contextual Info: POWER SILICON PNP Item Number Part Number I C 5 10 15 20 25 30 >= 40 45 50 BFT28B BFT28B STIP2006 BSP15 BST15 BST15 MJ5415 MJ5415 MM5415 MM5415 MM5415 ST5415 2N5415 TRSP5415 TRSP2006 STIP20 STIP205 ~~~~~~X 55 60 65 70 75 80 85 90 TRSP20X TRSP20X5 TRSP20X5

E421 fet

Abstract: equivalent transistor e176 J2N2608 J2N3821 E112 jfet e420 dual jfet 2N390G TRANSISTOR E421 dual JFET 2N4360 equivalent transistors Teledyne Semiconductor jfet
Contextual Info: Discretes from Teledyne Semiconductor In this catalog are listed more than 2000 high-quality diodes, bipolar transistors and JFETs available from Teledyne Semiconductor. Key specifications are included for each device and many are available w ith hi-rel processing to m ilitary specifications.

ksd 302 250v, 10a

Abstract: irf 5630 transistor 2SB 367 IRF 3055 AC153Y transistor ESM 2878 TIP 43c transistor 2sk116 bf199 bd643
Contextual Info: 5 transistor 1 A-Z datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-00-0 Dieses Buch ist hinterlegt und urheberrechllich geschutzt. Alle

triac LT 5220

Abstract: BF247 bd130 by103 LIF 4117 2N3020 2N2405 bu208 2N7923 2n5716
Contextual Info: Product Guide Page Rectifiers Transistors 20 Switching, Small Signal, Medium Power, High Power, High Frequency . 4 th ru 14 Transistors (Fets) 15 th ru 17 Thyristors 21 th ru 22 Triacs 23 Zeners 18 thru 19 Outlines 24 thru 25 Index 2 thru 3 (A LPH A NUM ERIC)

e420 dual jfet

Abstract: AC digital voltmeter using 7107 MPS5010 bf320 JFET BF245 bf246 j201 2n3819 mc6821 ICL7117 VOLTMETER cookbook for ic 555 hall marking code A04 e304 fet
Contextual Info: Component Data Catalog 1987 INTERSIL, INC., 10600 RIDGEVIEW COURT, CUPERTINO, CA 95014 Printed in U.S.A. Copyright 1987, Intersil, Inc., All Rights Reserved ^ GE and 408 996-5000 TWX: 910-338-2014 are registered trademarks of General Electric Company, U.S.A.