2N5045 Search Results

2N5045

Abstract: 2N5046 2N5047
Contextual Info: TYPES 2N5045. 2N5046, 2N5047 DUAL N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T I N N O . O L -S 7 2 1 1 6 9 5 , M A R C H 1 9 7 2 MATCHED FIELD-EFFECT TRANSISTORS High |y fs |/C jSs Ratio High-Frequency Figure-of-Merit Low Input Capacitance Cj$$ . . . 8 pF Max

2N5045

Abstract: 2N5046 2N5047
Contextual Info: designed for 2N 5047 Silicon ix . Performance Curves NNR See Section 5 • High Gain Differential Amplifiers BEN EFITS • Minimum System Error and Calibra­ tion 5 m V Offset Maximum 2N5Ö45 2N5045 2N5046 a monolithic dual n-channel JFETs • Low D rift

jfet selector guide

Abstract: T0-220SM
Contextual Info: SEMELAB pic Type_No 2N3824 2N3824LP 2N4391 2N4391CSM 2N4392 2N4392CSM 2N4393 2N4393CSM 2N4416 2N5045 2N6659 2N6659-LCC4 2N6659-SM 2N6660 2N6660-LCC4 2N6660-SM 2N6661 2N6661-220M 2N6661-LCC4 2N6661SM 2N6755 2N6756 2N6757 2N6758 2N6759 2N6760 2N6761 2N6762 2N6763

2N5045

Abstract: 2N5047 2N3921-2 2N4084-5 2N5045-7 2N5046 J401 U401-6
Contextual Info: designed for 2N 5047 a Siliconix . Performance Curves NNR See Section 5 • High Gain Differential Amplifiers BEN EFITS • Minimum System Error and Calibra­ tion 5 m V Offset Maximum 2N5Ö45 2N5045 2N5046 monolithic dual n-channel JFETs • Low D rift

u233

Abstract: 2N5454 UC2138 2N3457 2N5906 2N5908 2N6483 2N5515 uc2147 2N3954
Contextual Info: Type Case Geometry Number Style 2N3921 2N3922 2N3954 2N3954A 2N3955 2N3955A 2N3956 2N3457 2N3958 2N4082 2N4083 2N4084 2N4085 2N5045 2N5046 2N5047 2N5196 2N5197 2N5198 2N5199 2N5452 2N5453 2N5454 2N5515 2N5516 2N5517 2N5518 2N5519 2N5520 2N5521 2N5522 TO71

Contextual Info: N-Channel Dual JFET Transistors VP Part No. Min. V Max. (V) VP Gfs VGS1-2 VOS Drift ∆VGS Max. Max. Min. Max. (mmho) (mmho) (mV) (µV/C) Gfs VGS1-2 VOS Drift ∆VGS IDSS Match Gfs Match Package % IDSS % Gfs Bulk 2N5045 2N5197 2N5564 2N5565 0.5 0.7 0.5 0.5

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Q2T2905

Abstract: SN3351 3N208 q2t2222 TIS25 2N3808 2N3680 2N3809 2N381 T05 n3806
Contextual Info: Multi Transistors Dual Bipolar M ATCHIN G SELECT!roR HFE 20% HFE VBE VBE 5 mV RATINGS 10% 3 mV U N M ATCH ED 2N2641 2N2644 2N2913 2N2914 2N2223* 2N2640* 2N2643* 2N2917 2N2918 2N2972 2N2973 2N2976 2N2977 2N3349* 2N3352* 2N3806 2N3807 2N4854 2N4855 2N3348*

2N3819 equivalent

Abstract: MPF111 2N3821-4 2N5045 2N3819 2N3921-2 2N4220-2 2N4223-24 2N5457-9 2N5556-58
Contextual Info: designed fo r B . S ilic o n ix Performance Curves NRL See Section 5 • G eneral Purpose Am plifiers MPF109 n-channel JFET B E N E F IT S • Low Cost ■ Analog Switches • Autom atic Insertion Package TO -92 See Section 7 A B S O L U T E M AXIM UM R A T IN G S 25°C

KE4416

Abstract: ST5025 SE5055 CS9013 N3055 transistor bf 175 2N6375
Contextual Info: DH3467C Quad PNP Core Driver DESCRIPTION CONNECTION DIAGRAM The DH3467C consists of four 2N3467 type PNP transistors mounted in a 14-pin molded dual-in-line package. The device is primarily intended fo r core memory application requiring operating currents

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

TRIAC 97A6

Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C
Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

BF195 equivalent

Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i­ co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products

Contextual Info: N-Channel Metal Can JFET’s Part No. @ VD S & ID RDS on Min. Max. (V) (V) (V) (V) (nA) (Ω) 4.0 10.0 5 3.0 3.0 9.0 5 3.0 1.0 4.0 5 3.0 2N5432 2N5433 VP BVGSS Min. 25 2N5434 @ ID Ciss Max. Crss Max. to n Max. toff Max. Package (mA) (pF) (pF) (ns) (ns) Bulk

2N5521

Abstract: 2N5562 2N5563
Contextual Info: [PMEHUKgTT ÄTTÄ[L LO W P O W E R FIELD EFFECT T R A N S IS T O R S Case Style Typ« Number (TO - Geometry BVgss Min (V) Ciss Max (pF) Vgss(off) Min Max (V) Idss Yfs Min Max (mA) Min Max (UMhos) 2N3921 2N3922 2N3954 2N3954A 2N3955 71 71 71 71 71 FN3.6

Contextual Info: "type No. 6133167 □□□□□SO fl 37E D SEMELAB LTD Option'1*^ Po,arity 2N4925 2N4928 2N4929 2N4930 2N4931 SCREEN HI-REL SCREEN SCREEN SCREEN NPN PNP PNP PNP PNP 2N4937 2N4999 2N5000 2N5001 2N5002 HI-REL HI-REL HI-REL HI-REL HI-REL PNP PNP NPN PNP NPN

dual fet U235

Abstract: 2N5566 "cross reference" FET 2N5459 2N3824 2N4393 2N3B19 2N5566 U235 jfet 133 2n5452
Contextual Info: N-Channel Dual JFETs 2.5 2.5 2.5 50 50 50 0.5 0.5 0.5 2N5564 N N N N N N N 71 71 71 78 78 78 99 0.1 0.1 0.1 0.1 0.1 0.1 0.15 3.0 3.0 3.0 5.0 5.0 5.0 4.0 40 40 40 25 2000 2000 2000 - 5.0 5.0 5.0 7.0 7.0 5.0 12 24 30 30 30 40 40 40 30 7500 7500 7500 5000 5000

2n3819 equivalent ic

Abstract: 2N5045-7 2N5045 2N3819 equivalent MPF111 equivalent U401-6 2n4220 2N3821-4 2N3921-2 2N4084-5
Contextual Info: monolithic dual n-channel JFET S NNR BACKS'0€ JUNCTION ISOLATED Siliconix designed f o r . . . • FE T Input Amplifiers B E N E FIT S : ■ Low and Medium Frequency Amplifiers • ■ Impedance Converters ■ Precision instrumentation Amplifiers M inim um System Error and Calibra­

2N3819 equivalent

Abstract: 2n3819 2n4222 to 92 2N5045 Siliconix JFET Dual
Contextual Info: 2N4222A 2N4222 2N4221A 2N4221 2N4220A 2N4220 Siliconix designed for . . . • ■ ■ ■ Performance Curves NRL See Section 5 Small-Signal Amplifiers VHF Amplifiers Oscillators M ixers BEN EFITS • High Gain • Low Receiver Noise Figure •A B S O LU TE M A X IM U M R A TIN G S 25°C

F245B

Abstract: BF256 2N3820 BC264 U1898E BFS21A MPF105 vergleichsliste BF320 TIS69
Contextual Info: FACHHÄNDLER INFORMATION DISKRETE PRODUKTE FETs Warum FET-Vorzugsprodukte? Weil: • 20% unserer Produkte mehr als 80% aller Anforderungen erfüllen. ■ wir unsere Produkte mittels Computer analysiert haben nach: größtem Bedarf notwendigen Parametern niedrigsten Kosten

Contextual Info: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE. *13 D • QSG433Ô a D G 3 b ì T 7 ~ Ì m ^ S E M IC O N D S / I C S 930 03616J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Monolithic Dual Devices ELECTRICAL CHARACTERISTICS at Tfl = 25°C lo ss

555 7490 7447 7 segment LED display

Abstract: SN76670 SNF10 rsn 3404 rsn 3305 NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG mc2051 SN76131 SN76005 Ross Hill SCR Contactor
Contextual Info: G ENERAL IN FO R M A TIO N INDEXES Numerical • Functional • Cross-Reference DISCRETE SEMICONDUCTORS A N D COMPONENTS O R D ER IN G INSTRUCTIO NS A N D M EC HA NICA L D ATA MACH IV PROCUREMENT SPECIFICATION L IN EA R CIRCUITS ECL CIRCUITS SERIES 54S/74S CIRCUITS

2N3958

Abstract: 2N3921 2N3922 2N3954 2N3954A 2N3955 2N3955A 2N3956 2N3957 2N4082
Contextual Info: ^ [Q [U] ¥ ©ÄTTÄ[L® L O W P O W E R FIE LD EFFEC T T R A N S IS T O R S ®tym KHgMflKML Type Number Case Style (T O -) Geometry EVgss Min (V) Ciss Max (PF) Vgss(off) Min Max (V) Idss Yfs Min Max (mA) Min Max (UMhos) 0.2 0.2 1.0 1.0 1.0 1.0 1.0 0.5