NJ35D Search Results

Contextual Info: L INTER F Z T CORP 5L.E D • 4ô2bflôfl 0 0 G 0 2 b 2 b ■ D20 r ^ 7 '< 2 NJ35D Process SILICON JUNCTION FIELD-EFFECT TRANSISTOR • Monolithic Dual Construction • Differential Amplifier Absolute Maximum Ratings Gate Current, lg Operating Junction Temperature, Tj

Contextual Info: ALLEGRO MICROSYSTEMS INC TB D • 05Cm336 00037L.3 T ■ ALGR T -9 1-0 1 PRO CESS NJ35D Process NJ35D Dual N-Channel Junction Field-Effect Transistor Process N J35D is a monolithic dual N-channel junction field-effect transistor designed for use as a differential amplifier. The matching characteristics

NJ32

Abstract: THJ5486 THJ5459 THJ5484 THJ5485 THJ55456 THJ55466 THJ55476
Contextual Info: ALL E GR O M I C R O S Y S T E M S 8514019 SPRAGUE. INC T3 » • D50433Ô SE M IC O N D S/IC S D D G 3 S 6 1 3 ■ ALÛR 93D 0 3 5 8 1 3 > 7"-2 ?*2.S JUNCTION FIELD-EFFECT TRANSISTO R CH IPS N-Channel JFETs ELECTRICAL CHARACTERISTICS at Tfl = 25°C Vgs oh

THJU401

Abstract: THJJ300B
Contextual Info: " S P R AG UE /S EM IC ON D GROUP 13 D • 6513350 0003562 b ■ 93D 03582 TTF-ZV-ZS 8 5 1 4 0 1 9 SPRAGUE . S E M I C O N D S / ICS JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS al Tfl = 25°C VGS ofl V(BR]GSS Limits Igss

NJ28D

Contextual Info: ALLEGRO MICROSYSTEMS INC 13 D • 0 S D M 33 Ô G D 037 SR 7 ■ ALGR T-91-01 P R O C E S S NJ28D Process NJ28D Dual N-Channel Junction Field-Effect Transistor P rocess N J28D is a monolithic dual N-channel junction field-effect transistor. It is similar to Process

Contextual Info: SP RA GU E/SEM IC OND GROUP 05 14 0 1 9 SPRAGUE. =13 D • S E M I C O N D S / ICS 0513050 0GG3SÔ3 fl ■ 93 D 0 3 5 8 3 JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C V g s ohj V(BRH3SS Limits Ig s s Conditions

Contextual Info: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE. *13 D • QSG433Ô a D G 3 b ì T 7 ~ Ì m ^ S E M IC O N D S / I C S 930 03616J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Monolithic Dual Devices ELECTRICAL CHARACTERISTICS at Tfl = 25°C lo ss

Contextual Info: SPRAGUE/S EM IC ON D GROUP 851 4019 SPRAGUE, ^ D • S E M I C O N D S / ICS 93D 03616J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Monolithic Dual Devices ELECTRICAL CHARACTERISTICS at TA = 25°C loss V gS[oH) Igss V BHJGSS Device Type 2N3954

Contextual Info: SPRAGUE/SEMICOND 8514019 SPRAGUE. GR OU P T3 D • S E M IC O N D S / IC S flS13flSD D D D 3 S 7 T b ■ 0 3 5 7 9 7 ^ ^ - ¿ S 'V 93D JUNCTION FIELD-EFFECT TRANSISTOR CHIPS_ _ N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C

NJ132

Abstract: THJ4416A THJ4856 THJ4856A THJ4857 THJ4857A THJ4858 THJ4858A
Contextual Info: AL L E GR O M I C R O S Y S T E M S 8 5 140 19 S P R A G U E . INC T3 D • 050433Ô S E MI C OND S / I C S 93D 0 0 0 3 5 0 0 1 ■ ALGR 0 3 5 8 0 2 > T -?-Z 5 JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C

Contextual Info: A L LE GR O M I C R O S Y S T E M S 8 5 1 4 0 1 9 S P R A GU E. INC ^3 D • 0 S 0 M 3 3 Ô 0 0 0 3 S Ö 2 5 ■ AL 6R 93 D 0 3 5 8 2 'b'T-Z.^ZS S E M I C O N D S / ICS JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS al TA = 25°C

THJ3821

Abstract: NJ16 NJ32 THJ3369 THJ3370 THJ3458 THJ3459 THJ3460 THJ3819 THJ3822
Contextual Info: AL L E GRO MI C ROS Y S T E MS 8514019 SPRAGUE. ^3 I NC D 0SDM336 D O D B S ? 11] S • ALGR ■ SEMICONDS/ IC S 93D 03579 JUNCTION FIELD-EFFECT TRANSISTOR CHIPS N-Channel JFETs ELECTRICAL CHARACTERISTICS at TA = 25°C Vgs oij V(BH)GSS Min. type THJ3369

Contextual Info: SPRAGUE/SEF1IC0ND CROUP 8514019 SPRAG U E! 1H D • SS13fiS0 0003530 5 ■ S E M IC O N D S / I C S 93D 03580 3>T -2?-25 _ JUNCTION FIELD-EFFECT TRA N SISTO R C H IP S N-Channel JFETs ELECTRICAL CHARACTERISTICS atTA =