2N3957 Search Results

Contextual Info: B 6 9 -9 7 2N3957, 2N3958 ^ ^ H A N N E ^ U A ^ iu C O M U N C T IO ^ T E ^ ^ F F E a ^ K A N S IS T O R • LOW AND MEDIUM FREQUENCY DIFFERENTIAL AMPLIFIERS • HIGH INPUT IMPEDANCE AMPLIFIERS Absolute maximum ratings at TA = 25°C Reverse Gate Source & Reverse Gate Drain Voltage

2N3958

Abstract: 2N3957 2N3958 equivalent 2n3958 datasheet NJ16
Contextual Info: Databook.fxp 1/14/99 11:30 AM Page B-6 B-6 01/99 2N3957, 2N3958 N-Channel Dual Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ Low and Medium Frequency Differential Amplifiers ¥ High Input Impedance Amplifiers At 25°C free air temperature:

2N3956

Abstract: 2N3957
Contextual Info: S ilic o n ix Performance Curves NFA See Section 5 2N3957 B EN EF IT S • Wide Dynamic Range I q Specified @ V q s = 20 V • Low Capacitance Cjss ^ 4 pF 2N3958 • Low and Medium Frequency Differential Amplifiers ■ High Input Impedance Amplifiers TO-71

2N3956

Abstract: 2N3958 equivalent 2N3957 TO71 package Siliconix JFET Pairs
Contextual Info: SILICONIX INC Ô2S473S 0013015 b 1ÖE D fX S ilic o n ix 2N3956 SERIES JL M N-Channel JFET Pairs “T-ZT7-2-7 The 2N3956 Series are monolithic designed for high performance amplification. JFET pairs differential PART NUMBER This series features tight matching,

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N4303

Abstract: sd215 siliconix 2n4416 jfet JFET u1898 cross 2N4381 2N4393 JFET 2N3330 2n4267 2N4302
Contextual Info: si6halFET Product Specifications 7-io N & P-Channel Single JFETs Siliconix N N N P P P 8.0 6.0 11.5 6.5 3.2 5.0 5.0 9.5. 20 20 40 40 40 30 30 30 _ - _ _ _ _ _ _ _ 45 45 - _ _ - _ 0.9 2.0 0.2 0.44 1.0 2.0 5.0 1.0 2.0 0.5 0.1 3.0 I5.0 15.0 _ 25 75 150 _ 90 60

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

TRANSISTOR 2n3955

Abstract: 2N3954 2N3954A 2N3955A 2N3955 2N3956 2N3954-2N3958 2n3957 transistor 2N3 X2N3954
Contextual Info: C A L O G I C CORP 4ÔE D 1AM432B OOOOBTb 4 CGC W U IO Q Iv w CORPORATION T n n 2N3954-2N3958/2N3954A /2N3955A FEATURES • • • • • ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted Low Offset and Drift Low Capacitance Low Noise Superior Tracking Ability

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

2N5521

Abstract: 2N5562 2N5563
Contextual Info: [PMEHUKgTT ÄTTÄ[L LO W P O W E R FIELD EFFECT T R A N S IS T O R S Case Style Typ« Number (TO - Geometry BVgss Min (V) Ciss Max (pF) Vgss(off) Min Max (V) Idss Yfs Min Max (mA) Min Max (UMhos) 2N3921 2N3922 2N3954 2N3954A 2N3955 71 71 71 71 71 FN3.6

dual fet U235

Abstract: 2N5566 "cross reference" FET 2N5459 2N3824 2N4393 2N3B19 2N5566 U235 jfet 133 2n5452
Contextual Info: N-Channel Dual JFETs 2.5 2.5 2.5 50 50 50 0.5 0.5 0.5 2N5564 N N N N N N N 71 71 71 78 78 78 99 0.1 0.1 0.1 0.1 0.1 0.1 0.15 3.0 3.0 3.0 5.0 5.0 5.0 4.0 40 40 40 25 2000 2000 2000 - 5.0 5.0 5.0 7.0 7.0 5.0 12 24 30 30 30 40 40 40 30 7500 7500 7500 5000 5000

2N3954

Abstract: 2N3958 2N3957 2N3955 2N3956 2N3954A 2N3955A "DUAL N-Channel JFET" 2N3954-2N3958
Contextual Info: 2 N 3 9 5 4 -2 N 3 9 5 8 M o nolithic Dual N -C h an n el JF E T OM üim GENERAL DESCRIPTION M a tc h e d F E T pa irs f o r d iffe r e n tia l a m p lifie rs . T h is fa m ily of general m e d iu m p u rp o s e fre q u e n c y F E T s is c h a ra c te riz e d f o r

Contextual Info: ALLEGRO MICROSYSTEMS INC 8514019 SPRAGUE. *13 D • QSG433Ô a D G 3 b ì T 7 ~ Ì m ^ S E M IC O N D S / I C S 930 03616J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Monolithic Dual Devices ELECTRICAL CHARACTERISTICS at Tfl = 25°C lo ss

2N6449

Abstract: MIXER U350 TR320 2N4861 2N4858A 2n4117 equivalent J231 2N5461 2N6450 CD860 SMP5116
Contextual Info: Databook.fxp 1/13/99 2:09 PM Page B-3 B-3 01/99 2N3821, 2N3822 N-Channel Silicon Junction Field-Effect Transistor Absolute maximum ratings at TA = 25¡C ¥ VHF Amplifiers ¥ Small Signal Amplifiers Reverse Gate Source & Reverse Gate Drain Voltage Continuous Forward Gate Current

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

1.0 k mef 250

Abstract: ME4003 ME4002 MA0411 transistor me6101 transistor BC 172B 2N2959 transistor bf 175 2N5173 2n3072
Contextual Info: INTRODUCTION This is Micro Electronics latest short form catalogue on discrete semi-conductor devices. We have introduced many new products since the previous publication. This guide provides a quick reference on the characteristics o f our products. Separate data sheets for a

Analog Devices model 233J

Abstract: alfa uv API 45 AD0042C AC1007 analog devices TSDC1610 AD504 fetal monitor device circuit diagrams AD533J Helitrim AD 233J
Contextual Info: ANALOG DEVICES PRODUCT GUIDE Copyright 1975 by Analog Devices, Inc. FOREWORD This book is a guide to the broadest range of electronic compo­ nents and devices needed by designers of instrumentation and control systems which accept, analyze, process, convert, trans­

E112 jfet

Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261

IN5314

Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
Contextual Info: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)

DN5565

Abstract: DN5564 2N5047 2N5566 2N5911 DN5567 U412 2N5045 2N5564 2N5912
Contextual Info: N-Channel Dual JFETs 2.5 2.5 2.5 50 50 50 0.5 0.5 0.5 2N5564 N N N N N N N 71 71 71 78 78 78 99 0.1 0.1 0.1 0.1 0.1 0.1 0.15 3.0 3.0 3.0 5.0 5.0 5.0 4.0 40 40 40 25 2000 2000 2000 - 5.0 5.0 5.0 7.0 7.0 5.0 12 24 30 30 30 40 40 40 30 7500 7500 7500 5000 5000

2N5561

Abstract: 2N5562 2N5563 2N5045 2N3921 2N3922 2N3934 2N3935 2N3954 2N3954A
Contextual Info: i T " - *• 7 - ^ r SEMICONDUCTORS INC CHE D | 013tbSD □□□□SÖT 7 | "J" Type Field Effect Transistors OPERATING CONDITIONS FOR THESE CHARACTERISTICS OP. CHAR. IV q s I - 2 1 D R IFT /uV/'C Vos (mV) AV q s Max Max •g (pA) Max Gf* fjrnhos Min Max

Contextual Info: SPRAGUE/S EM IC ON D GROUP 851 4019 SPRAGUE, ^ D • S E M I C O N D S / ICS 93D 03616J METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS N-Channel JFETs Monolithic Dual Devices ELECTRICAL CHARACTERISTICS at TA = 25°C loss V gS[oH) Igss V BHJGSS Device Type 2N3954

j201 jfet

Abstract: 2N4303 J201 Replacement fet cross reference FET J202 2N4381 2N3966 2N3909 J-FET 2N4393
Contextual Info: Iì ì ì F E T P r o d u c t p e c i f i c GENERAL GEOMETRY Section 4 a t i o n s ( C o n f d ) Product Specifications DEVICE S lUT s ì g PURPOSE —I —1 . , X X z z z z z z z z z z z z z z z z ù - o i z z z z z z 'z z

2N5045

Abstract: 2N5454 DN5566 U444 2N5902 2N5903 2N5196 2N5197 2N5198 2N5199
Contextual Info: sIgnalFET Produci Specifications 7-12 N -Channel Dual JFETs - Gate Min. Max. 2N5196 N 71 0.025 4.0 50 0.7 7.0 1000 — 2N5197 N 71 0.025 4.0 50 0.7 7.0 1000 _ 4.0 50 0.7 7,0 1000 4.0 50 0.7 7.0 1000 2N5198 N 71 2N5199 N 71 0.025 0.025 2N5545 Min. Max. • a