2N3922 Search Results

2N5521

Abstract: 2N5562 2N5563
Contextual Info: [PMEHUKgTT ÄTTÄ[L LO W P O W E R FIELD EFFECT T R A N S IS T O R S Case Style Typ« Number (TO - Geometry BVgss Min (V) Ciss Max (pF) Vgss(off) Min Max (V) Idss Yfs Min Max (mA) Min Max (UMhos) 2N3921 2N3922 2N3954 2N3954A 2N3955 71 71 71 71 71 FN3.6

700FX

Abstract: 2N3921 2N4084-5 J401 2N3921 equivalent 2N3921-2 2N3922 2N4084 2N4085 FET package TO-71
Contextual Info: n o n o - c h a l i t h n n e D iffe r e n tia l d l J u F a E T l s s X _ f o r • • ilic o n ix P e rfo rm a n c e C u rv e s N s e e s e c tio n 5 • A m p lifie r s MR 2N3922 - 1 _ ? _I a e s i g n e a • i c 2N 3921 B m b e n e f it s

2N4084

Abstract: 2N4085 2N3922 2N3921 Siliconix Dual N-Channel JFETs
Contextual Info: B d u a l s iliconix n -c h a n n e l JFE T s -1_?_ I X_ • Differential Amplifiers 2N3922 Performance Curves NMR see section 5 aesignea for • • • 2N3921 m o n o lit h ic b en efit s 2N4084 <» Minim um System Error and Calibration 5 m V Offset Maximum 2 N3921

2N3921

Abstract: 2N3922 X2N3922 Dual N-Channel JFET
Contextual Info: CALOGIC CORP Mß E D 10 4 4 3 2 2 00005^4 □ CGC V T-Tni-y 2N3921/2N3922 ’ FEATURES ABSOLUTE MAXIMUM RATINGS Ta = 25°C unless otherwise noted • Low Drain Current • High Output Impedance • Matched V g s, A V g s and gts Gate-Source or Gate-Drain Voltage (Note 1) .-50V

Dual N-Channel JFET

Abstract: 2N3922 2N3921 X2N3922
Contextual Info: CA L O G I C CORP MfiE D • 1Ô414322 0 0 0 0 2 T 4 □ « C G C T-zî-^ 7 2N3921 / 2N3922 Monolithic Dual N-Channel JFET General Purpose Amplifier 2N3921/2N3922 FEATU R ES A B S O L U T E MAXIMUM RATING S Ta = 25°C unless otherwise noted • Low Drain Current

JFET

Abstract: J-FET 2n4267 2N4303 2N4381 2N4393 2N3971 2N4119 2N4302 2N4341
Contextual Info: Industry Part Number Type and Classification FET Cross Reference Conta Recommended Replacement Data Sheet Page _ Pafle Industry Part Number Type and Classification Recommended Replacement 2N3909 2N3909A 2N3921 2N3922 2N3954 P JFET P JFET D N JFET D N JFET

JFET

Abstract: 2N4303 "cross reference" 2n4393 replacement 2N4381 2n4416 jfet J-FET 2N4302 2N4303 2N4304 fet cross reference
Contextual Info: Industry Part Number Type and Classification FET Cross Reference Conta Recommended Replacement Data Sheet Page _ Pafle Industry Part Number Type and Classification Recommended Replacement 2N3909 2N3909A 2N3921 2N3922 2N3954 P JFET P JFET D N JFET D N JFET

Contextual Info: 2N3922 Transistors Dual N-Channel JFET Military/High-RelN V BR DSS (V)50 V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200þ I(GSS) Max. (A)1.0n @V(GS) (V) (Test Condition)30 V(GS)off Min. (V) I(DSS) Max. (A)10m

u233

Abstract: 2N5454 UC2138 2N3457 2N5906 2N5908 2N6483 2N5515 uc2147 2N3954
Contextual Info: Type Case Geometry Number Style 2N3921 2N3922 2N3954 2N3954A 2N3955 2N3955A 2N3956 2N3457 2N3958 2N4082 2N4083 2N4084 2N4085 2N5045 2N5046 2N5047 2N5196 2N5197 2N5198 2N5199 2N5452 2N5453 2N5454 2N5515 2N5516 2N5517 2N5518 2N5519 2N5520 2N5521 2N5522 TO71

fet cross reference

Abstract: 2N4381 2N4302 fet 2N4304 JFET 2N5457 P-Channel JFET 2N3823 fet 2N4393 2N4303 2N4119
Contextual Info: Industry Part Number Type and Classification FET Cross Reference Recommended Replacement Data Sheet Page _ Pafle Industry Part Number Conta Type and Classification Recommended Replacement 2N3909 2N3909A 2N3921 2N3922 2N3954 P JFET P JFET D N JFET D N JFET

fet cross reference

Abstract: 2N4302 2N4381 2N4393 JFET 2N5457 2N3B19 JFET 2N6568 2N4303 2n4416 jfet
Contextual Info: Industry Part Number Type and Classification FET Cross Reference Conta Recommended Replacement Data Sheet Page _ Pafle Industry Part Number Type and Classification Recommended Replacement 2N3909 2N3909A 2N3921 2N3922 2N3954 P JFET P JFET D N JFET D N JFET

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

2N3922

Abstract: JFET Matched 2N3921 matched pair JFET MONOLITHIC DUAL N-CHANNEL JFET
Contextual Info: 2N 3921, 2N 3922 Dual M onolithic N -C h an n el J F E T D G tfñfiP S D IL M ATCHED FET PAIRS FOR D IFFERENTIAL AMPLIFIERS PIN CONFIGURATION CHIP TOPOGRAPHY TO-71 6017 • Ig < 250 pA 25 nA at 100°C • goss < 20 ¿umbos ( I d = 700 mA) • Matched V q s , AV g s , and gts

Contextual Info: Ä 1TM, Q ( N -C H A N N E L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum 12,000 .017" i f t l (0.432mm) Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . 016 " (0.406mm) Die Size- It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2% .

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

2SK117BL

Abstract: nec 2sk163 2Sk68a 2SK163 TO92 2sk163 2SK117-BL UC240 2SK523M 2SK105 TO92 2SK117-BL(F)
Contextual Info: JUNCTION FETs Item Number Part Number Manufacturer V BR GSS loss 91s VGS(OH) IGSS (V) (A) Min (S) Max Max (V) Max (A) 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m 10m

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

dual fet U235

Abstract: 2N5566 "cross reference" FET 2N5459 2N3824 2N4393 2N3B19 2N5566 U235 jfet 133 2n5452
Contextual Info: N-Channel Dual JFETs 2.5 2.5 2.5 50 50 50 0.5 0.5 0.5 2N5564 N N N N N N N 71 71 71 78 78 78 99 0.1 0.1 0.1 0.1 0.1 0.1 0.15 3.0 3.0 3.0 5.0 5.0 5.0 4.0 40 40 40 25 2000 2000 2000 - 5.0 5.0 5.0 7.0 7.0 5.0 12 24 30 30 30 40 40 40 30 7500 7500 7500 5000 5000

2N3958

Abstract: 2N3921 2N3922 2N3954 2N3954A 2N3955 2N3955A 2N3956 2N3957 2N4082
Contextual Info: ^ [Q [U] ¥ ©ÄTTÄ[L® L O W P O W E R FIE LD EFFEC T T R A N S IS T O R S ®tym KHgMflKML Type Number Case Style (T O -) Geometry EVgss Min (V) Ciss Max (PF) Vgss(off) Min Max (V) Idss Yfs Min Max (mA) Min Max (UMhos) 0.2 0.2 1.0 1.0 1.0 1.0 1.0 0.5

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

SU2369

Abstract: SU2080 2N4085 SU2365 2N3922 2N4084
Contextual Info: ra@ y T r N -C H A N N E L D U AL JU N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS 038" (0.965mm) Die Size. Pad Sue: It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.

2N3821 junction fet

Abstract: 2N3922 2N3824 2N5545
Contextual Info: [^ © O J K c n r © Ä T T Ä [L © N - C H A N N E L J U N C T IO N FE T CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Al .017" (0.432mm Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS . 016 " (0.406mm) It is advisable that: