u233
Abstract: 2N5454 UC2138 2N3457 2N5906 2N5908 2N6483 2N5515 uc2147 2N3954
Contextual Info: Type Case Geometry Number Style 2N3921 2N3922 2N3954 2N3954A 2N3955 2N3955A 2N3956 2N3457 2N3958 2N4082 2N4083 2N4084 2N4085 2N5045 2N5046 2N5047 2N5196 2N5197 2N5198 2N5199 2N5452 2N5453 2N5454 2N5515 2N5516 2N5517 2N5518 2N5519 2N5520 2N5521 2N5522 TO71
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2n39212n39222n39542n3954a+142n39552n3955a2n39562n34572n39582n4082u2332n5454uc21382n59062n59082n64832n5515uc2147
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IC HXJ 2038
Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent
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2N4303
Abstract: sd215 siliconix 2n4416 jfet JFET u1898 cross 2N4381 2N4393 JFET 2N3330 2n4267 2N4302
Contextual Info: si6halFET Product Specifications 7-io N & P-Channel Single JFETs Siliconix N N N P P P 8.0 6.0 11.5 6.5 3.2 5.0 5.0 9.5. 20 20 40 40 40 30 30 30 _ - _ _ _ _ _ _ _ 45 45 - _ _ - _ 0.9 2.0 0.2 0.44 1.0 2.0 5.0 1.0 2.0 0.5 0.1 3.0 I5.0 15.0 _ 25 75 150 _ 90 60
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p1087p1087-18sd210sd211+16s0212sd213sd214sd215u1897u1897-182n4303sd215 siliconix2n4416 jfetjfetu1898 cross2n43812n4393jfet 2n33302n42672n4302
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BF195 equivalent
Abstract: bf197 2N3680 BF173 transistor bf 175 BC413 BFY39 BF256 transistor bf194 ke4416
Contextual Info: Introduction This is N ational S em iconducto r's latest handbook on discrete sem i co nd u ctor devices. Y o u w ill notice th at the co m p any has added more than 350 transistor part numbers and three p ro d u ct fam ilies since pub lication o f the last handbook in 1971. M any o f these new products
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bf195 equivalentbf1972n3680bf173+6transistor bf 175bc413bfy39bf256transistor bf194ke4416
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TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP
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1n32451n3611gp1n3612gp1n3613gp+161n3614gp1n37251n3957gp1n4001gp1n4002gp1n4003gptca780tfk u 111 btfk u 4614 btfk s 186 ptfk u 217 btfk bp w 41 ntfk bpw 41 ntfk 880tfk 148tdsr 5150 g
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2N5521
Abstract: 2N5562 2N5563
Contextual Info: [PMEHUKgTT ÄTTÄ[L LO W P O W E R FIELD EFFECT T R A N S IS T O R S Case Style Typ« Number (TO - Geometry BVgss Min (V) Ciss Max (pF) Vgss(off) Min Max (V) Idss Yfs Min Max (mA) Min Max (UMhos) 2N3921 2N3922 2N3954 2N3954A 2N3955 71 71 71 71 71 FN3.6
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2n39212n39222n39542n3954a+92n39552n3955a2n39562n39572n39582n40822n55212n55622n5563
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dual fet U235
Abstract: 2N5566 "cross reference" FET 2N5459 2N3824 2N4393 2N3B19 2N5566 U235 jfet 133 2n5452
Contextual Info: N-Channel Dual JFETs 2.5 2.5 2.5 50 50 50 0.5 0.5 0.5 2N5564 N N N N N N N 71 71 71 78 78 78 99 0.1 0.1 0.1 0.1 0.1 0.1 0.15 3.0 3.0 3.0 5.0 5.0 5.0 4.0 40 40 40 25 2000 2000 2000 - 5.0 5.0 5.0 7.0 7.0 5.0 12 24 30 30 30 40 40 40 30 7500 7500 7500 5000 5000
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2n5564n55652n39552n4339+132n55462n43402093mdual fet u2352n5566 "cross referencefet 2n54592n38242n43932n3b192n5566u235jfet 1332n5452
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2n3819 equivalent ic
Abstract: 2N5045-7 2N5045 2N3819 equivalent MPF111 equivalent U401-6 2n4220 2N3821-4 2N3921-2 2N4084-5
Contextual Info: monolithic dual n-channel JFET S NNR BACKS'0€ JUNCTION ISOLATED Siliconix designed f o r . . . • FE T Input Amplifiers B E N E FIT S : ■ Low and Medium Frequency Amplifiers • ■ Impedance Converters ■ Precision instrumentation Amplifiers M inim um System Error and Calibra
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10mv/2n3921-22n4084-52n5045-7+10u401-62n4085chp2n5046chp-47chpu403chp-06chp2n3819 equivalent ic2n50452n3819 equivalentmpf111 equivalent2n42202n3821-4
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700FX
Abstract: 2N3921 2N4084-5 J401 2N3921 equivalent 2N3921-2 2N3922 2N4084 2N4085 FET package TO-71
Contextual Info: n o n o - c h a l i t h n n e D iffe r e n tia l d l J u F a E T l s s X _ f o r • • ilic o n ix P e rfo rm a n c e C u rv e s N s e e s e c tio n 5 • A m p lifie r s MR 2N3922 - 1 _ ? _I a e s i g n e a • i c 2N 3921 B m b e n e f it s
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2n3921t0-71200tia700fx+82n4084-5j4012n3921 equivalent2n3921-22n39222n40842n4085fet package to-71
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2N3958
Abstract: 2N3921 2N3922 2N3954 2N3954A 2N3955 2N3955A 2N3956 2N3957 2N4082
Contextual Info: ^ [Q [U] ¥ ©ÄTTÄ[L® L O W P O W E R FIE LD EFFEC T T R A N S IS T O R S ®tym KHgMflKML Type Number Case Style (T O -) Geometry EVgss Min (V) Ciss Max (PF) Vgss(off) Min Max (V) Idss Yfs Min Max (mA) Min Max (UMhos) 0.2 0.2 1.0 1.0 1.0 1.0 1.0 0.5
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2n39212n39222n39542n3954a+102n39552n3955asdf506sdf507sdf508sdf5092n39582n39562n39572n4082
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SU2369
Abstract: SU2080 2N4085 SU2365 2N3922 2N4084
Contextual Info: ra@ y T r N -C H A N N E L D U AL JU N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS 038" (0.965mm) Die Size. Pad Sue: It is advisable that: a) the die be eutectically mounted with gold silicon preform 98/2%.
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965min0254mm000m073su2369+5su20802n4085su23652n39222n4084
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E112 jfet
Abstract: siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 E402 dual jfet E430 jfet E310 JFET N NPD5565
Contextual Info: Selection Guide and Cross Reference Linear Integrated Systems SMALL SIGNAL DISCRETE SEMICONDUCTORS JFETs DMOS Switches BJTs MOSFETs Linear Integrated Systems 4042 Clipper Court • Fremont, CA 94538 • www.linearsystems.com Tel: 510 490-9160 • Toll Free: 800 359-4023 • Fax: 510 353-0261
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ls422ls423ls424ls425+15ls426ls832ls833ls4391ls5911e112 jfetsiliconix e412npd5564jfet e300npd5566data sheet of fet bfw10e402 dual jfete430 jfete310 jfet nnpd5565
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IN5314
Abstract: IN5309 IN5286 2N5163 2NB906 IN5313 U1897E 2N3456 UC4250 in5297
Contextual Info: 95D 02926 8368602 SOLITRON DEVICES INC SOLITRON DEVICES INC "ts f - z- f de I " a a tf tto a ooos^ab ~ Devices, Inc L O W P O W E R F IE L D E F F E C T T R A N S I S T O R S Type N um ber C ase Style TO- Avol Min V/mV lb Max (nA) Ios. Max (nA) Vos Max (mV)
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uc4250uc42500mil-std-883c19s00/+152n7109sdf8200fmn35sdf8201fmnz35sdf8202in5314in5309in52862n51632nb906in5313u1897e2n3456in5297
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2NB906
Abstract: IN5313 2NB90 IN5286 IN5296 solitrondevices IN5302 in5287 IN5306 2N5902 TO-92
Contextual Info: 8 3 6 8 6 0 2 SO L ITRON D E V I C E S INC T - 2- 95D 0 2 9 2 6 S0LITR0N DEVICES INC D F Jfl3 b ö t,G 2 2.jr OOOSTEb M o [ M i r ©ÄTTÄ[L ( L O W P O W E R FIELD EFFECT T R A N S IS T O R S Devices, Inc © [P U C W O O lM tL Type Number Case Style
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uc4250uc4250cmil-std-883c2n2609+162n38212n38222n38232n48562n48572n48s82nb906in53132nb90in5286in5296solitrondevicesin5302in5287in53062n5902 to-92
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2N5561
Abstract: 2N5562 2N5563 2N5045 2N3921 2N3922 2N3934 2N3935 2N3954 2N3954A
Contextual Info: i T " - *• 7 - ^ r SEMICONDUCTORS INC CHE D | 013tbSD □□□□SÖT 7 | "J" Type Field Effect Transistors OPERATING CONDITIONS FOR THESE CHARACTERISTICS OP. CHAR. IV q s I - 2 1 D R IFT /uV/'C Vos (mV) AV q s Max Max •g (pA) Max Gf* fjrnhos Min Max
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ivqsi-212n39212n39222n3934+92n3954-62n39352n3954a2n39542n3955a2n55612n55622n55632n5045
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2N4084
Abstract: 2N4085 2N3922 2N3921 Siliconix Dual N-Channel JFETs
Contextual Info: B d u a l s iliconix n -c h a n n e l JFE T s -1_?_ I X_ • Differential Amplifiers 2N3922 Performance Curves NMR see section 5 aesignea for • • • 2N3921 m o n o lit h ic b en efit s 2N4084 <» Minim um System Error and Calibration 5 m V Offset Maximum 2 N3921
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2n3921t0-712n39222n4084+32n4085vdg-10vsiliconix dual n-channel jfets
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j201 jfet
Abstract: 2N4303 J201 Replacement fet cross reference FET J202 2N4381 2N3966 2N3909 J-FET 2N4393
Contextual Info: Iì ì ì F E T P r o d u c t p e c i f i c GENERAL GEOMETRY Section 4 a t i o n s ( C o n f d ) Product Specifications DEVICE S lUT s ì g PURPOSE —I —1 . , X X z z z z z z z z z z z z z z z z ù - o i z z z z z z 'z z
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2n38212n38222n42202n4221+142n42222n54572n41392n4861aj201 jfet2n4303j201 replacementfet cross referencefet j2022n43812n39662n3909j-fet2n4393
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2N5045
Abstract: 2N5454 DN5566 U444 2N5902 2N5903 2N5196 2N5197 2N5198 2N5199
Contextual Info: sIgnalFET Produci Specifications 7-12 N -Channel Dual JFETs - Gate Min. Max. 2N5196 N 71 0.025 4.0 50 0.7 7.0 1000 — 2N5197 N 71 0.025 4.0 50 0.7 7.0 1000 _ 4.0 50 0.7 7,0 1000 4.0 50 0.7 7.0 1000 2N5198 N 71 2N5199 N 71 0.025 0.025 2N5545 Min. Max. • a
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2n51962n51972n51982n5199+102n55452n55462n55472n59022n59032n59042n50452n5454dn5566u444
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J201 Replacement
Abstract: fet cross reference 2N3B19 j201 Cross Reference 2n4381 JFET 2N4302 CROSS REFERENCE 2n6661 2N4393 fet 2N4304
Contextual Info: Iì ì ì F E T P r o d u c t p e c i f i c GENERAL GEOMETRY Section 4 a t i o n s ( C o n f d ) Product Specifications DEVICE S lUT s ì g PURPOSE —I —1 . , X X z z z z z z z z z z z z z z z z ù - o i z z z z z z 'z z
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2n38212n38222n42202n4221+152n42222n54572n39552n43392n5546j201 replacementfet cross reference2n3b19j201 cross reference2n4381jfet2n4302cross reference 2n66612n4393fet 2n4304
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SU2369
Abstract: SU2080 2N4085 SU2365 2N3921 2N3922 2N4084 SU2081
Contextual Info: [ ^ M © ? ©ÄTFÄ[L© Devices. Inc N -C H A N N E L D U A L J U N C T IO N FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum Backside Contact: 3,000 A Gold ASSEMBLY RECOMMENDATIONS .038" (0.965mm Die Size: Pad Sise: It is advisable that:
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965mm0254mmsu2369su2080+62n4085su23652n39212n39222n4084su2081
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LG color tv Circuit Diagram schematics
Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY
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3186jlg color tv circuit diagram schematicsfree transistor equivalent book 2scnpn transistors list according to current, voltag+7rca sk cross-referencekia 4318transistor cs 9012til 322asx3704diode d.a.t.a. book1n1007
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siliconix fet
Abstract: Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 E112 jfet jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet Transistor E112 FET FETs in Balanced Mixers Ed Oxner equivalent components FET BFW10
Contextual Info: s S ilic o n ix FET Design Catalog 1979 Siliconix incorporated Printed in U.S.A. Siliconix incorporated reserves the right to make changes in the circuitry or specifications in this book at any time w ithout notice. Siliconix incorporated assumes no responsibility
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j-23548k24123i39-40inz3766+1153-c-03siliconix fettransistor e112 fet n-channeljfet transistor replacement guide j201e112 jfetjfet bfw10 terminalsjfet bfw10 specifications4856a mosfettransistor e112 fetfets in balanced mixers ed oxnerequivalent components fet bfw10
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sx3704
Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide
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sx3704ap239transistor 801398c547+66c131cin2222a2n50b2n2064radio ac176 ac126sft353
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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mc2259mc880pmc9713pmc2257+61n4003 germanium diode specification2n1256 s p1n4465mc9802pmc9718p3n214
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