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    2N3966 Search Results

    2N3966 Datasheets (23)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N3966
    Philips Semiconductors N-Channel Junction Field Effect Transistors Original PDF 63.86KB 4
    2N3966
    Micro Electronics Semiconductor Device Data Book Scan PDF 36.81KB 1
    2N3966
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 171KB 1
    2N3966
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 119.17KB 1
    2N3966
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 110.48KB 1
    2N3966
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 42.65KB 1
    2N3966
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 173.57KB 1
    2N3966
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 157.73KB 1
    2N3966
    Unknown Shortform Datasheet & Cross References Data Short Form PDF 88.39KB 1
    2N3966
    Unknown Catalog Scans - Shortform Datasheet Scan PDF 51.79KB 1
    2N3966
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 39.8KB 1
    2N3966
    National Semiconductor Switches/Choppers Scan PDF 102.32KB 2
    2N3966
    National Semiconductor N-Channel JFET Switch Scan PDF 99.89KB 2
    2N3966
    National Semiconductor Pro-Electron Transistor Datasheets Scan PDF 39.77KB 1
    2N3966
    National Semiconductor Shortform National Semiconductor Datasheet Short Form PDF 46.5KB 1
    2N3966
    Semico N-Channel Junction Field Effect Transistors Scan PDF 298.21KB 4
    2N3966
    SGS-Thomson Transistor Datasheet Scan PDF 123.89KB 3
    2N3966
    Siliconix FET Design Catalogue 1979 Scan PDF 176.28KB 3
    2N3966
    Siliconix MOSPOWER Design Data Book 1983 Scan PDF 39.85KB 1
    2N3966
    Thomson Semiconductors Telecom Integrated Circuits Data Book 1985 Scan PDF 26.41KB 1
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    2N3966 Price and Stock

    Select Manufacturer
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics 2N3966 2,835 1
    • 1 $8.89
    • 10 $5.78
    • 100 $4.18
    • 1000 $3.82
    • 10000 $3.82
    Buy Now

    New Jersey Semiconductor Products Inc 2N3966

    TRANSISTOR,JFET,N-CHANNEL,30V V(BR)DSS,2MA I(DSS),TO-72
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components 2N3966 2,268
    • 1 $11.70
    • 10 $11.70
    • 100 $11.70
    • 1000 $4.09
    • 10000 $4.09
    Buy Now

    Texas Instruments 2N3966

    Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Junction FET, TO-72
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Vyrian 2N3966 8,781
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    Get Quote

    2N3966 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2n3966

    Abstract: transistor 2sk CRS15
    Contextual Info: rr PHILIPS INTERNATIONAL MIE D B 711GÛ2b 0GEb3MS A ? B1 P H I N 2N3966 T -3 S -2 5 ' N-CHANNEL SILICON FET Symmetrical n-channel, depletion type, planar epitaxial junction field-effect transistor in a T O -7 2 metal envelope w ith the shield lead connected to the case. The transistor is suitable in a variety o f


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    2n3966-t-3s-25ato-72002b34fl+3t-35-25transistor 2skcrs15 PDF

    MRF660

    Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
    Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040


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    2n28762n31372n33752n3553+162n36322n37332n39242n39262n39272n3948mrf660mrf485ktc1969mrf150mpmrf4962sc2029bmrf648mrf646mrf429mpmrf648 data sheet PDF

    MPF102

    Abstract: J304 MPF102 model 2N3966 2N4416-16A 2N5555 2N5668-70 J304-5 MPF108 MPF112
    Contextual Info: 2N3966 s n-channel JFET S ilico n ix Performance Curves NH See Section 5 designed fo r . . . • Analog Switches ■ Choppers ■ Commutators B EN EF IT S Low Insertion Loss, No Offset Voltage R DS on < 220 n Short Switching Aperture Times Crss < 1-5 pF t ( o n ) + tfoff) < 50 n s Typical


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    -55to220s2vqs-16mpf102+9j304mpf102 model2n39662n4416-16a2n55552n5668-70j304-5mpf108mpf112 PDF

    PN5432

    Abstract: U1898
    Contextual Info: A National Semiconductor NATL N-Channel JFETs C|» rds on (11) @ lD (P F)@ V d s Max (mA) Max (V) 2N3824 2N3966 2N3970 2N3971 2N3972 TO-72 TO-72 TO-18 TO-18 TO-18 SO 30 40 40 40 1 1 1 1 1 0.1 1 0.25* 0.25* 0.25* 30 20 20 20 20 0.1 0.1 0.25 0.25 0.25 15 10


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    2n38242n39662n39702n3971+82n39722n40912n40922n40932n43912n4392pn5432u1898 PDF

    jfet selection guide

    Abstract: rcm 2020
    Contextual Info: 3> —3 H JFET Selection Guide _ N - C n a n n e l 2 2 Ul o JFETs CO o S W IT C H F S /n H O P P F R S , S tyle 2N3824 TO-72 50 2N3966 TO-72 30 1 2N3970• TO-18 40 1 2N3971 TO-18 40 1 0.25* 2N3972 TO-18 40 1 0,25* 2N4091 TO-18 40 1 0.2* 2N4092 TO-18 40 1


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    jfet selection guidercm 2020 PDF

    U1897E

    Abstract: U1899E 2N4978 U1898E uc250 uc251 2N4393 2N4858 2N4977 UC130
    Contextual Info: *BVDgo Case Ciss or Type Style Geometry Max BVgss Number TO (pF) Min (V) Crss Max (pF) Vgs (off) Min (V) Vgs (off) Max (V) Idss Min (v) 2N3824 2N3966 2N3970 2N3971 2N3972 2N4091 2N4092 2N4093 2N4391 2N4392 2N4393 2N4856 2N4856A 2N4857 2N4857A 2N4858 2N4858A


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    2n38242n39662n39702n3971+162n39722n40912n40922n40932n43912n4392u1897eu1899e2n4978u1898euc250uc2512n43932n48582n4977uc130 PDF

    Contextual Info: TYPE 2N3966 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTOR B U L L E T IN N O . D L-S 7 0 1 1 3 5 6 , A U G U S T 1970 FOR HIGH-SPEED CO M M U TA TO R A N D CHOPPER APPLICATIO N S • Low rds on • - • 220 £1 Max • Low iD (o ff) • ■ 1 nA Max


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    2n3966 PDF

    Contextual Info: 2N3966 N-CHANNEL SILICON FET Symmetrical n-channel, depletion type, planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is suitable in a variety of low power switching applications, e.g. in multiplexing systems.


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    2n3966bb53t31d03sfisb003sas7 PDF

    Contextual Info: "H INTER F E T CORP DE I 4fl21.ßflñ DOOOQflfl 5 METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS ’ v.; ">r ELECTRICAL CHARACTERISTICS al TA = 25°C ? ' V BRJGSS limits less @Vgs (V Min. (V) Max. (V) 2N3824 -50 -1.0 -0.1 -30 -30 -1.0 -0.1 -20 2N3966 2N3970


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    2n38242n39662n39702n3971+62n39722n40912n40922n40932n43912n4392 PDF

    Contextual Info: 2N3966 Transistors N-Channel JFET Military/High-RelN V BR DSS (V)30 V(BR)GSS (V)30Ê I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)200õ I(GSS) Max. (A)100p @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A)


    Original
    2n3966 PDF

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    ic hxj 20381n52398db5ttfk 102 cny 70+6hxj 2038rca 40361 transistorrca 40362tfk 680 cny 70diode equivalent 1n34a2n5952 equivalent PDF

    PN4858

    Abstract: 2N4392 NATIONAL SEMICONDUCTOR 2N4393 PN4856 TIS75 2N3971 2N4393, NATIONAL pn4093 PN4857 TIS74
    Contextual Info: DDBTDIM CM CM CM CM CM O O O O O CM CM CM CM CM o O O O O CM CM CM CM CM 0 * 0 O O O CM CM CM h * r o o o o o K IO O 1 - T - T­ IO 40 i o IO IO ^ ^ in m i n lo Jo i n i n in in -r- t— t— CO CO in in in m w 00 O r in m m m in © © oo CM cm m issss


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    b5d113d2n56532n5654pn4091+14pn4092pn4093pn4858pn4859pn4860pn48612n4392 national semiconductor2n4393pn4856tis752n39712n4393, nationalpn4857tis74 PDF

    mpf102 equivalent

    Abstract: MPF102 JFET MPF102 y parameters 2N4416-16A equivalent mpf102 U1994 2N5668-70 MPF112 2N4416-16A 2N5555
    Contextual Info: NH n-channel JFET GATE ALSO BACKSIDE CONTACT H d e s ig n e d fo r . . . S ilic o n ix • V H F /U H F Amplifier* BENEFITS: • Oscillators • Low Noise NF - 3 dB Typical @ 400 MHz • Wideband High fffj/Cjss Ratio ■ Mixers ■ Low Input Capacitance High Speed


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    2n39662n4416-16a2ns484-62n5555+112n5668-70mpf102mpf108mpf112pn4416j304-5mpf102 equivalentmpf102 jfetmpf102 y parameters2n4416-16a equivalentu1994 PDF

    Contextual Info: SPRAGUE/SEMICOND 8514019 SPRAGUE. GROUP T3 D • f i S 1 3 ôSQ SEMICONDS/ ICS 93D GG 0 3 b l S 03615 b ■ j METAL-CASE JUNCTION FIELD-EFFECT TRANSISTORS Switches ELECTRIC/IL CHARACTERISTICS at TA = 25°C ^6S 0ff) Limits Ig s s V(BR)6SS Max. (V) -3 0 _ -8 .0


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    2n43932n48562n4856a2n4857+12n3824 PDF

    2N3966

    Abstract: 219T
    Contextual Info: 2N 3966 J V _ N-CHANNEL SILICON FET S ym m etrica l n-channel, d e p le tio n ty p e , planar e p ita xia l ju n c tio n fie ld -e ffe ct tran sisto r in a T O -72 m etal envelope w ith th e shield lead connected to th e case. The tra n sisto r is suitable in a va rie ty o f


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    2n3966003505b219t PDF

    mpf102 equivalent

    Abstract: U1994 MPF*112 MPF112 K1837-18 2N5668-70 2N5555 equivalent siliconix MPF108 2NS484-6
    Contextual Info: S Siliconix • VH F/U H F A m plifiers ■ Oscillators ■ M ixers J305 P erform ance Curves N H See Section 5 J304 n-channel JFETs designed fo r . B EN EFITS • Characterized for Operation at 100 and 400 MHz • Low Noise NF = 1.7 dB Typical at 100 MHz


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    vqs-16mpf102 equivalentu1994mpf*112+7mpf112k1837-182n5668-702n5555 equivalentsiliconixmpf1082ns484-6 PDF

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


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    bs9000d3007he4000b80ribution+10bpw22acm .02m z5u 1kvpin configuration of bfw10la4347b2x84tda3653 equivalenttriac tag 9322hef40106bp equivalentfx4054 coredsq8 PDF

    Contextual Info: N-Channel Metal Can JFET’s Part No. @ VD S & ID RDS on Min. Max. (V) (V) (V) (V) (nA) (Ω) 4.0 10.0 5 3.0 3.0 9.0 5 3.0 1.0 4.0 5 3.0 2N5432 2N5433 VP BVGSS Min. 25 2N5434 @ ID Ciss Max. Crss Max. to n Max. toff Max. Package (mA) (pF) (pF) (ns) (ns) Bulk


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    2n54322n54332n54342n3686+62n38222n4118a2n4416a2n36842n51972n6485 PDF

    bf0262a

    Abstract: BF0262 OM335 1N5821ID OM336 OM2061 OM926 BUK645 OM2060 BLY94
    Contextual Info: Alphanumeric Type Index Typo Page Type Page Type Page Page Type 1N821 1N821A 1N823 1N823A 1N825 11 11 11 11 11 1N5227B 1N5228B 1N5229B 1N5230B 1N5231B 13 13 13 13 13 2N2905A 2N2906 2N2906A 2N2907 2N2907A 17 17 17 17 17 2N6599 2N6600 2N6601 2N7000 2N7002 1N825A


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    1n8211n821a1n8231n823a+161n8251n825a1n8271n827a1n8291n829abf0262abf0262om3351n5821idom336om2061om926buk645om2060bly94 PDF

    Contextual Info: ALLEGRO MICROSYSTEMS INC 85 14019 SPRAGUE. =13 D □SGM33Ô SEM ICO ND S/ IC S D003bl5 5 IALGR 93D 03615 j METAL-CASE JUNCTION FIELD-EFFECT TRA N SISTO R S N-Channel JFETs Switches ELECTRICAL CHARACTERISTICS at TA = 25°C loss V g S o!I) V(BR)G SS Device


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    sgm33d003bl52n38242n3966+62n39702n39712n39722n40912n40922n4093 PDF

    Contextual Info: N - Channel Junction Field Effect Transistors SWITCHING/CHOPPING MAXIMUM RATINGS TYPE NO. Pd VGS ofl (mA) (V) BVGSS (mW) (V) min max rds(on) Ciss Crss ton toff (ohms) (PF) (PF) (bs) (ns) min IMI m ar max max max IMI 3 0.5 0.5 4 10 5 3 10 6 30 50 100 100 220


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    2n3966o-92ddo-72dh2n4861a+42n55552n56382n56392n5640 PDF

    2N3971

    Abstract: 2n3966 2N5116 2N3824 2N3970 2N3972 2N4091 2N4092 2N4093 2N4391
    Contextual Info: «o C signalFET Product Specifications O cont’d y= O o m RF AMP D E V IC E O SWITCHES & CHOPPERS <D a G EO M ETRY (Section 4) co T> X X z z X 3 ? CCXOOOOOOUOOOOOOOOOOOOOOtflto^tttflüÎÉkoU Z Z Z Z Z Z Z Z Z Z Z Z Z Z Z Z Z Z Z Z Z Z Z a . £ L O . a . Q . Z Z Z Z Z


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    u1837u1837-182n38242n3966+132n39702n4861a2n50182n50192n51142n51152n39712n51162n39722n40912n40922n40932n4391 PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


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    5ke100a5ke100ca5ke10a5ke10ca+165ke110a5ke110ca5ke11a5ke11ca5ke120a5ke120cassp35n03bc417ksh200 equivalent2n5457 equivalentss8050 equivalent1n34 equivalentfqp50n06 equivalentbd139 equivalent2n5458 equivalent2n3563 equivalent PDF

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    11ta0a12a025aa0290u0u55+16a0291a0292a0305a0306a0a56a0a59aeg diode si 61 laeg diodes d6sgs transistorsbc23bsiliconix u315mz306by126bcv59ac1282n3680 PDF