2N3926 Search Results

MRF660

Abstract: MRF485 KTC1969 MRF150MP MRF496 2SC2029B MRF648 MRF646 MRF429MP MRF648 Data Sheet
Contextual Info: ButtFuzz' BiPolar RF Transistor Info http://www.smlec.com/cb/rftransistors.htm Transistor 1 av 8 Power Bipolar RF Power Transistors dB Gain dB 28V Voltage Frequency 2N2876 10W 50MHz 2N3137 2N3375 2N3553 2N3632 2N3733 2N3924 2N3926 2N3927 2N3948 2N3966 2N4040

2N4041

Abstract: 2N4127 2N3924 2N5016 2N5102 2N5108 2N3553 2N3632 2N3733 2N5421
Contextual Info: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108

SRK-2001

Abstract: 2N3375 srf transistor SRK2002 SRF-1001 SRF1002 2N4440 2N2876 solitron transistors 2N5016
Contextual Info: rf power transistors 114 SILICON NPN/RF I TYPE NUMBERS CASE SIZE VeB 2N2876 2N3375 2N3553 2N3632 2N3733 2N3866 2N3924 2N3926 2N3927 2N4012 2N4040 2N4041 2N4127 2N4128 2N4427 2N4428 2N4429 2N4430 2N4431 2N4440 2N4933 2N5016 2N5070 2N5071 2N5090 2N5102 2N5108

Contextual Info: TELEPHONE 973 376-2922 (212)227-6005 FAX: (973) 379-8980 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.SA 2N3924 2N3926 2N3927 SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS The 2N3924 is an n-p-n overlay transistor in a TO-39 metal envelope with the collector connected to the case.

2N3927

Contextual Info: bTE D • 2N3924 2N3926 2N3927 bb53*131 003*1766 Tb7 « A P X N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS The 2N 3 9 24 is an n-p-n overlay transistor in aT O -39 metal envelope with the collector connected to the case. The 2 N 3 9 26 and the 2N 3 9 27 are n-p-n overlay transistors in TO -60 metal envelopes with the emitter

2N3924

Abstract: inductor 4312 020 36640 2N3927 7z08 4312 020 36640 2N3926 aTO-39 842 ic Silicon Epitaxial Planar Transistor philips cl 100 hie
Contextual Info: b'ìE T> • 2N3924 2N3926 2N3927 b b S B ' m 002*1700 Tb7 BiAPX N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS T he 2 N 3 9 2 4 is an n-p-n o verlay tra nsistor in a T O -3 9 m etal envelope w ith the c o lle c to r connected to the case.

2N3927

Abstract: 2N3926 2N3924 2N3924h 7z08 4312 020 36640 philips 1969 transistor 2N3 400Ic philips 1968
Contextual Info: MIE D m 711Gfl2b 002Ö057 1 2N3924 2N3926 2N3927 [PHIN PHILIPS INTERNATIONAL r - 3 3 - O SILICON PLANAR EPITAXIAL OVERLAY TRANSISTORS The 2N3924 is an n-p-n overlay transistor in aTO-39 metal envelope with the collector connected to the case. The 2N3926 and the 2N3927 are n-p-n overlay transistors in T0-60 metal envelopes with the emitter

Contextual Info: 2N3926 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)36 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)12 Maximum Operating Temp (øC)200# I(CBO) Max. (A)100u @V(CBO) (V) (Test Condition)15 h(FE) Min. Current gain.5.0 h(FE) Max. Current gain.150

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

1N5438

Abstract: tfc 5630 2N5161 germanium 2N4193 1N1319 A2023 transistor 2N217 1N5159 transistor bf 175
Contextual Info: The Semiconductor DataBook This is the first supplement to the 4th Edition o f the Semiconductor Data Book originally published in July 1969. It is produced to keep an up-to-date listing o f the most advanced semiconductor products. Devices characterized in this supplement include only the type numbers introduced after the publi­

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

BPW22A

Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
Contextual Info: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey

MRF245

Abstract: PT8828 BFY70 J0303 CM-501 sd1238 2N6096 RF Transistor S10-12 2N4932 BLY94
Contextual Info: 960. 1215 MHz class C pulse for DME/IFF/TACAN transistors pour applications D M E /IFF/TAC A N puisées, classe C TYPE PACKAGE CONFIG. V cc V SD 1528 .280 4L STU D (A) S D 1528-1 .280 4LSL (A) S D 1528-8 .250 2LFL HERM SD 1530 .280 4L STU D (A) SD 1530-1

mrf245

Abstract: SD1416 PT9788 PT8710 2N5642 BLY94 PT8811 BLX66 PT8740 2N4072
Contextual Info: 88. 108 MHz class C for FM tansmitters émetteurs/réémetteurs FM, classe C TYPE SD 1457 SD 1460 PACKAGE CONFIG. Vcc CE CE 28 28 . 500 4LFL . 500 4LFL Pout W (V) > THOMSON-CSF fo (MHz) Pin (W) Gp (dB) (% ) 108 108 7,5 20 > 10 9 75 75 75 160 r!c .380 4L FL

PT8811

Abstract: PT8740 transistor pt4544 PT8828 RF Transistor S10-12 2N6095 SD1076 MRF510 MM1669 2N3563 REPLACEMENT
Contextual Info: cross reference liste d'équivalence THOMSON-CSF THOMSON-CSF pro d u ct line for RF pow er tran sisto rs has su cce ssfully cross referenced m any co m p e titive tran sisto r products. In m ost cases, these replacem ent tran sisto rs d ire ctly replace the co m p e titive pa rts for DC and RF p a ram eters in a ctu al operating system s. It is possible,

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

transistor f6 13003

Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
Contextual Info: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.

Tr431

Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Contextual Info: I RJ 1 international, rectifier IR R e p la c e ­ m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e ­ m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200

MHW721A2

Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
Contextual Info: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA

2N3927

Abstract: 2N3926 SD1072 SD1062
Contextual Info: H n M T 5 M/ m I# IV IIC rO S e iI P ro g re s s P o w e re d b y T e c h no log y Commerce Drive Montgomeryville, PA 18936Tel: 215 631 -9840 N3926/2N3927 RF & MICROWAVE TRANSISTORS 130.230MHz FM MOBILE APPLICATIONS • ■ ■ ■ ■ . ■ FREQUENCY

2N3924

Abstract: 2N3927 2N3926 THOMSON-CSF MICROWAVE TRANSISTORS N3924
Contextual Info: S G S-THO MSON SOLID STATE MICROWAVE 2N 3924 2N 3926 2N3927 THQMSON-CSF COMPONENTS CORPORATION ;Montgomeryvilie, P A 18936 • 215 362-8500 » TWX 510-661-7299 VHF COMMUNICATIONS TRANSISTORS DESCRIPTION: These SSM devices are silicon epitaxial NPN-planar transistors which

Contextual Info: J UJ nitron sem iconductors Semitronics Corp. S 2 m www.DataSheet.in silicon transistors UHF/VHF power transistors 7~~3 7 ~ 0 / NPN type « Rttad Breakdown V o ttaiM V V V CB CB EB V CE 65 6b :^ N 3 e 3 2 ] 65 : 2N3733 6b 40 40 40 40 4.0 4.0 4.0 4.0 28 28

9033 transistor

Abstract: PT8828 2N4932 PT8740 BLW27 BLX66 sd1315 BLY94 MM1669 PT8811
Contextual Info: 0.75. 4.2 GHz microwave transistors for class C operation O transistors hyperfréquences, classe C TYPE TH 1002 TH 1005 TH 1010 TH 2001 TH 2003 TH 2005 TH 2302 TH 2304 TH 2307 TH 3000 TH 3001 TH 3003 TH 3005 TH 4200 TH 4201 2 IM 4428 2N 4429 2N 4430 2N 4431

PT8740

Abstract: PT8811 replace for 2N918 PT9780 mrf245 THOMSON-CSF PRODUCTS transistor pt4544 PT9788 PT8710 PT8828
Contextual Info: 4 0. 900 MHz class A linear for CATV/MATV applications f\ TYPE POLARITY classe A linéaire pour amplificateurs d'antenne PACKAGE @ V BR CEO min. (V) (M Hz) le Im A) C l2e C22b* (pF) l\IF @ (dB) BFX 89 BFY90 BFR 99 BFR 38 N N P P TO-72 TO-72 TO-72 TO-72