3SK21 Search Results

Contextual Info: High Frequency FETs 3SK219 Silicon N-Channel 4-pin MOS FET For VHF amplification unit: mm +0.2 2.8 –0.3 • Features +0.2 0.65±0.15 0.65±0.15 M Di ain sc te on na tin nc ue e/ d ● Low noise-figure NF ● Large power gain PG ● Mini-type package, allowing downsizing of the sets and automatic

3sk212

Contextual Info: ROHM CO LTD L4Q E 7 ô s a cî cn D OGObMHl 3 • R H M h 7 > y X $ /Transistors 3SK212 - 7 = 2 7 - 2 ^ “ # U *5 A • T V \ r f < K N 9 * > % ) V M ES M FET 3SBC212 m n m .T )W - h -i-ir\A5\r<W

fet chopper

Abstract: 3SK21
Contextual Info: 3SK21 •>V 3 > N » •» » * M O S F E T S IL IC O N N -C H A N N EL M O S F E T ^ 3 -j C H O PPER B 1. V =3 C=rJ 1. íl s * t r ► < > : Dr».• D ia ttn u i (JE D E C I« # * * £ » * : S itrcf 4i-v— » « : e««# t ,c £ i - 2. f - H :C«t* 1

3SK212

Abstract: s11s
Contextual Info: 3SK212 h ~7 > V 7s $ /T r a n s is to r s 3SK212 MES M FET • ^ Jfi^ iiH / D im e n s io n s Unit: mm D « f i i g a ^ j 'é F t 'o (NF=1.5dB, 800MHz) 2) I (PG=18dB, 800MHz) 3) IM Œ S M W ô T H ê ?' A i o M ( V ds= 5V ) E S 4) F E T (Ciss= 09pF) 5) (Crss=20fF)

3SK21

Abstract: 3SK219
Contextual Info: High Frequency FETs 3SK219 Silicon N-Channel 4-pin MOS FET For VHF amplification unit: mm +0.2 M Di ain sc te on na tin nc ue e/ d 2.8 –0.3 • Features 0.65±0.15 VG1S ±8 V Gate 2 to Source voltage VG2S ±8 V Drain current ID ±30 mA Allowable power dissipation

Contextual Info: High Frequency FETs 3SK219 Silicon N-Channel 4-pin MOS FET For VHF amplification unit: mm +0.2 2.8 –0.3 • Features ● Low noise-figure NF ● Large power gain PG ● Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.

3sk219

Contextual Info: 3SK219 High Frequency FETs 3SK219 Silicon N-Channel 4-pin MOS Unit : mm For VHF amplification +0.2 2.8 –0.3 1.5 –0.3 Low noise-figure NF 0.65±0.15 3 2 +0.1 Downsizing of sets by mini power package and automatic insertion 1 0.4 –0.05 ● 0.95 Large power gain PG

3SK164

Abstract: 3SK14 NEC 3sk21 3SK20 3sk30 3SK30A 2SK2132 3SK30A D,S,G1,G2 3SK33 LM 1011
Contextual Info: - 128 - H f m £ tt ffl « & m & vm * K V A £ Vos* m * (V) X fr * fê S l* IS P d /P c h (A) 1* (W) loss (max) (A) Vg s (V) W (Ta=25*C) 14 (min) (max) V d s (V) (V) (V) (min) (max) V d s (A) (A) (V) 9m (min) (S) { \ l f Id (A) Vd s (V) Id (A) HS SW MOS

2SK1216

Abstract: 3SK139 2SJ364 FETs Field Effect Transistors 3SK268 3SK269 3SK192 2SK1104 2SK374 3SK286
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta =25 “CÍ Package (No. Application General-use low frequency amplifier SS Mini Type S Mini Type (D1) (D5) 2SJ0385 Mini Type (D10) 2SK198 2SK374 2SK123 Capacitor microphone APreliminary

Katalog CEMI

Abstract: OA81 diode byp 660-50r Philips BC147 p 181 transoptor Mullard oa81 Hitachi 12V MS 5A-181 OA81 BA102 diode telefunken hr 780 rds
Contextual Info: WSTIJP W ydaw nictw a Przem yslu M aszynowego WEMA przekazujq uzytkow nikom branzow y katalog pt. E l e m e n t y pólp rz e w o d n i k o w e , zaw ierajqcy dokladne inform acje techniczne dotycz^ce elem entów pólprzew odnikow ych produkow anych w Polsce n a skal^ przem yslow ^. W szystkie w yroby

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2SK620

Abstract: 3SK268 3SK269 2SK1104 3SK286 CAMERA MOS 2SJ0385 2SJ163 2SJ164 2SJ364
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta=25“C Package (No.) Application Mini Type (D10) SS Mini Type S Mini Type (D 1) General-use low frequency amplifier (D 5) New S Type (D39) 2 SKIIO 3 2SJ0385 2SJ364 2SK662 2SK663

Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Ta Package (No. Application (D1) General-use low frequency amplifier 2SJ0385 General-use Capacitor microphone Video camera pre-amp. Infrared sensor A2SK2380 APrelim inary Mini Type

3SK205

Abstract: 3SK241 3SK228 3SK201 3SK220 3SK235 3SK233 3SK203 3SK204 gaas mes
Contextual Info: - 182 - f M £ tí: £ m & m s * K 3SK197 B ÍL 3SK198 m X m Vg s * X 5* V 12 DSX ±10 35m D 150m ±100n ±8 ±6 V* (V) * 3: P d /P c h (A) % S fë i* * (W) Ig s s (max) (A) VHF TV Tuner MOS N DE UHF RF MOS N DE 13.5 DS ±8 30m D 200m ±50 ß Vg s (V)

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

3SK192

Abstract: 2SK651
Contextual Info: Field Effect Transistors • Silicon Junction FETs Absolute Maximum Ratings Electrical Characteristics Ta =25 °C (Ta = 2 5 “C) Package (No.) Application SS Mini Type S Mini Type (D5) (D1) Mini Type (D12) New S Type (D34) TO-92 (D46) V dso * V gds (V )

sx3704

Abstract: AP239 Transistor 80139 8C547 6C131C IN2222A 2N50B 2N2064 radio AC176 AC126 sft353
Contextual Info: INTERNATIONAL TRANSISTOR EQUIVALENTS GUIDE A LSO BY THE S A M E AUTHOR BP108 International Diode Equivalents Guide BP140 Digital IC Equivalents and Pin Connections BP141 Linear IC Equivalents and Pin Connections ALSO OF INTEREST BP234 Transistor Selector Guide

Transistor 2SA 2SB 2SC 2SD

Abstract: 2SK596 2SC906 2SA1281 bup 3130 C3885A 2sd103 2SA1379 34d 937 086 bfq59
Contextual Info: cD/ transistor 2 0-u datenlexikon data dictionary lexique de donnees enciclopedia dati lexicon de datos vergleichstabelle comparison table table d'equivalence tabella comparativa tabla comparativa ISBN 3-927486-01-9 Dieses Buch ist hinterlegt und urheberrechtlich geschutzt. Alle

2sb504

Abstract: KPL 3009 2SB502 BLY34 germanium BF316A BSX12 2SD716, 2SB686 35W amplifiers bf197 acy52
Contextual Info: TRANSISTOR DATA TABLES Other Titles of Interest B P 85 International Transistor Equivalents Guide B P286 A R eferen ce G uide to Basic Electronics Terms BP287 A R eferen ce G uide to Practical Electronics Terms n TRANSISTOR DATA TABLES by Hans-Gunther Steidle

3SK184

Abstract: 3SK192 3sk220 3SK139 h024 3sk200 3sk169 GN1043 4 pin hall 3SK14
Contextual Info: —5/ Mini Type 4-pin Package • Outline U n it I mm Diodes 2 -8 ‘ o 3 0 .6 5 t Q 1 5, a w rn 15 — ,0 .6 5 t 0 . 1 5 m - 5 -8 1 (4 • > '« . A, it it i* á 7 ^ r- y T \ r „ iS h £ £ ¥ CM CM <*> ‘ o |o o l ÒK t t S t ? n £ ' M J CD 7 ^ M 'U * - v - y 7 \

3SK2411

Abstract: 2SC1215 3SK143 3SK22 3sk169 3SK247
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Appli­ Band cation TO-92 (D46) New S Type (D34) M Type (D35) 2SC1215 Package (No.) SS Mini Type S Mini Type S Mini Type (3 pin) (4 pin)

AN3962FB

Abstract: MN1880023 mn19412 MN1874033 IC AN7135 an3814k MN1883214 an8294nsb mn4117405 mn171202
Contextual Info: umb Type No. Page MOS L Type No. Page Type No. Page Type No. MN151614 43 MN1882417 45 ▲ MN151630 43 MN1882421 46 MN3204 • MN3200 Series Page Type No. Page MN56000 Series 58 63 MN56020 58 68 • O M N 101C 01A 46 MN152810 43 MN188321 45 MN3205 68 MN56030

3sk287

Abstract: 3SK139 3sk247 3SK285
Contextual Info: Transistors Selection Guide by Applications and Functions # High Frequency Silicon Transistors for Tuners (FETs included) Package (No.) Appli­ Band cation TO-92 (D49) New S Type (D39) Cross Pack (Ceramic) (D37(a), D37(b) ) M Type (D40) SS Mini Type S Mini Type S Mini Type

KF520

Abstract: KT725 diac kr 206 KT707 KD502 kt201 KT206-200 KU607 KYS 30 40 diode KT784
Contextual Info: TESLA ECIMEX, a. s. T E /1 \L /I Sem iconductor Discrete Devices Sem iconductor Discrete Devices CONTENTS . 3 TRANSISTORS. 5