3SK30 Search Results

3SK302

Abstract: s-mini 3SK306
Contextual Info: Panasonic H ig h F r e q u e n c y FE T s 3SK302 Tentative , 3SK306(Tentative) Silicon N -Channel MOS 3SK 302 For UHF amplification U n it : m m • Features • Though low voltage operation, performance is equivalent to the con­ ventional product. -e h EE

3SK305

Abstract: 3SK301
Contextual Info: Panasonic H ig h F r e q u e n c y FE T s 3SK301 Tentative , 3SK305(Tentative) Silicon N -C hannel MOS 3SK301 F o rV H F amplification U n it : m m • Features • Though low voltage operation, performance is equivalent to the con­ ventional product. EE

Hitachi DSA00118

Abstract: 3SK309 l2726 21L47 327 MARKIG
Contextual Info: 3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier ADE-208-472 A Z 2nd. Edition November. 1996 Features • • • Capable of low voltage operation (VDS = 1.5 to 3 V) Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) High power gain

3SK303

Abstract: S-Mini 3SK307
Contextual Info: Panasonic High Frequency FETs 3SK303 Tentative , 3SK307(Tentative) Silicon N-Channel MOS Unit : mm 3SK303 For VHF amplification 0 . 65 ± 0 .1 5 - 13 • Features • Though low voltage operation, performance is equivalent to the con­ ventional product. • Downsizing of sets by mini or S-mini type package, and automatic

MM1225

Contextual Info: 3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier HITACHI ADE-208-472 A 2nd. Edition Features • Capable of low voilage operation VDS = 1.5 to 3 V • Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) • High power gain (PG = 21.0 dB typ. at f = 900 MHz)

3SK300

Abstract: 3SK300ZR-TL-E
Contextual Info: 3SK300 Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier REJ03G0818-0300 Previous ADE-208-449A Rev.3.00 Aug.10.2005 Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz Outline RENESAS Package code: PLSP0004ZA-A

ADE-208-472A

Abstract: "marking code Z" "0.6"V Hitachi DSA002750
Contextual Info: 3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier ADE-208-472A Z 2nd. Edition November. 1996 Features • Capable of low voltage operation (VDS = 1.5 to 3 V) • Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) • High power gain (PG = 21.0 dB typ. at f = 900 MHz)

3sk304

Abstract: 3SK308 k308
Contextual Info: Panasonic H igh F req u en cy FETs 3SK304 Tentative , 3SK308(Tentative) Silicon N-Channel MOS 3SK304 For UHF amplification Unit : mm • Features • Though low voltage operation, performance is equivalent to the con­ ventional product. Be -EE 3 • Downsizing of sets by mini or S-mini type package, and automatic

3SK301

Abstract: 3SK305
Contextual Info: Panasonic High Frequency FETs 3SK301 Tentative , 3SK305(Tentative) Silicon N-Channel MOS Unit : mm 3SK301 For VHF amplification 0.65±0.15 - 13 • Features • Though low voltage operation, performance is equivalent to the con­ ventional product. • Downsizing of sets by mini or S-mini type package, and automatic

3SK302

Abstract: 3SK306
Contextual Info: Panasonic H igh F req u en cy FETs 3SK302 Tentative , 3SK306(Tentative) Silicon N-Channel MOS 3SK302 For UHF amplification Unit : mm • Features • Though low voltage operation, performance is equivalent to the con­ ventional product. -EE 3 Be • Downsizing of sets by mini or S-mini type package, and automatic

3sk285

Contextual Info: 3SK285 High Frequency FETs 3SK302 Tentative , 3SK306(Tentative) Silicon N-Channel MOS 3SK302 For UHF amplification 1.5 –0.3 0.65±0.15 1 3 2 +0.1 0.4 –0.05 1.9±0.2 4 0.95 2.9±0.2 Though low voltage operation, performance is equivalent to the con- 0.95

3sk285

Contextual Info: 3SK285 High Frequency FETs 3SK301 Tentative , 3SK305(Tentative) Silicon N-Channel MOS 3SK301 For VHF amplification 1.5 –0.3 0.65±0.15 0.5R 0.95 1.9±0.2 4 1 3 2 +0.1 0.4 –0.05 0.95 2.9±0.2 Though low voltage operation, performance is equivalent to the conventional product.

Contextual Info: 3SK285 High Frequency FETs 3SK304 Tentative , 3SK308(Tentative) Silicon N-Channel MOS 3SK304 For UHF amplification 1.5 –0.3 0.65±0.15 1 3 2 +0.1 0.4 –0.05 1.9±0.2 4 0.95 2.9±0.2 Though low voltage operation, performance is equivalent to the con- 0.95

transistor C5080

Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
Contextual Info: Products at a Glance by Application High Frequency Use 1. UHF/VHF TV Tuner Block Diagram Line Up Package outline TO-92 A pplication UH F RF 1 M PAK 4 P C M PAK 4 P G aA sM E S M PAK-4 « 3SK228 FET CM PA K -4 4 P 3SK239A 3SK309 MOS FET Vdd= 1 2 V 3SK186 3SK295

Contextual Info: High Frequency FETs 3SK303 Tentative , 3SK307 (Tentative) Silicon N-Channel MOS FET For VHF amplification 3SK303 • Features ● Achieving the equivalent performance to the conventional products under enhancement mode operation. ● Mini-type/S-mini type package, allowing downsizing of the sets

3sk300

Abstract: marking code g1s Hitachi DSA00118
Contextual Info: 3SK300 Silicon N Channel Dual Gate MOS FET UHF / VHF RF amplifier ADE-208-449 Z 1st. Edition April 1996 Features • • Low noise figure NF = 1.0dB typ. at f = 200MHz High gain PG = 27.6dB typ. at f = 200MHz Outline MPAK-4 2 3 1 4 1. Source 2. Gate1 3. Gate2

3sk fet

Contextual Info: Panasonic High Frequency FETs 3SK301 Tentative , 3SK305 (Tentative) Silicon N-Channel MOS FET For lo w -v o lta g e o p e ra tin g VHF a m p lific a tio n 3SK301 • Features 0 Achieving the equivalent performance to the conventional prod­ ucts under low voltage operation.

Hitachi DSA002759

Contextual Info: 3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier ADE-208-472 A 2nd. Edition Features • Capable of low voltage operation VDS = 1.5 to 3 V • Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) • High power gain (PG = 21.0 dB typ. at f = 900 MHz)

Hitachi DSA002759

Contextual Info: 3SK300 Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier ADE-208-449 1st. Edition Features • Low noise figure NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz Outline 3SK300 Absolute Maximum Ratings Ta = 25°C Item

3SK304

Abstract: 3SK308
Contextual Info: Panasonic H ig h F r e q u e n c y FE T s 3SK304 Tentative , 3SK308(Tentative) Silicon N -Channel MOS 3SK304 For UHF amplification U n it : m m • Features • Though low voltage operation, performance is equivalent to the con­ ventional product. EE -e h

Contextual Info: High Frequency FETs 3SK302 Tentative , 3SK306 (Tentative) Silicon N-Channel MOS FET For low-voltage operating UHF amplification 3SK302 • Features ● Achieving the equivalent performance to the conventional products under low voltage operation. ● Mini-type/S-mini type package, allowing downsizing of the sets

3SK309

Abstract: dual-gate
Contextual Info: November 1997 Mobile Communication Low Noise Amplifier Devices HA22022 and 3SK309 Boost Portable Phone Effectiveness h e use o f m obile com m unica­ tio n devices such as portable p h on es is increasing at a rapid pace in lin e w ith m arket lib ­ eralization, increasing call ranges,

3SK309

Abstract: DSA003794
Contextual Info: 3SK309 GaAs N Channel Dual Gate MES FET UHF RF Amplifier ADE-208-472 A 2nd. Edition Features • Capable of low voltage operation VDS = 1.5 to 3 V • Excellent low noise characteristics (NF = 1.25 dB typ. at f = 900 MHz) • High power gain (PG = 21.0 dB typ. at f = 900 MHz)

3SK30

Abstract: 3SK301 3SK305 SC-82
Contextual Info: High Frequency FETs 3SK301 Tentative , 3SK305 (Tentative) Silicon N-Channel MOS FET For low-voltage operating VHF amplification 3SK301 +0.2 M Di ain sc te on na tin nc ue e/ d • Features ● Achieving the equivalent performance to the conventional products under low voltage operation.