3SK239A Search Results

3SK239A

Abstract: Hitachi DSA00307
Contextual Info: 3SK239A GaAs Dual Gate MES FET Application UHF RF amplifier Features • Excellent low noise characteristics NF = 1.3 dB Typ at f = 900 MHz • Capable of low voltage operation Outline 3SK239A Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit

Contextual Info: 3SK239A GaAs Dual Gate MES FET HITACHI Application UHF RF amplifier Features • Excellent low noise characteristics • Capable of low vol tage operation NF = 1.3 dB Typ at f = 900 MHz Outline CMPAK-4 4 1. 2. 3. 4. Source Gatel Gate2 Drain 1093 3SK239A

IG2U

Contextual Info: 3SK239A GaAs N-Channel Dual Gate MES FET HITACHI Application UHF RF amplifier Features • Excellent low noise characteristics NF = 1.3 dB typ at f = 900 MHz • Capable of low voltage operation Outline CMPAK—4 .A 3 , HHptft td itltO A n ic lä f ^ 1 . Source

transistor C5080

Abstract: transistor 2SC458 C5247 Transistor 2SA 2SB 2SC 2SD transistor 2sc1515 2SC1755A transistor f 20 nf C5246 A1052 C4965
Contextual Info: Products at a Glance by Application High Frequency Use 1. UHF/VHF TV Tuner Block Diagram Line Up Package outline TO-92 A pplication UH F RF 1 M PAK 4 P C M PAK 4 P G aA sM E S M PAK-4 « 3SK228 FET CM PA K -4 4 P 3SK239A 3SK309 MOS FET Vdd= 1 2 V 3SK186 3SK295

MESFET Application

Abstract: 52s marking MARKING 52S
Contextual Info: HITACHI 3SK239A-GaAs N-Channel Dual Gate MESFET Application C M P A K -4 UHF RF amplifier Features 2 • Excellent low noise characteristics NF = 1.3 dB typ at f = 900 MHz • Capable of low voltage operation 4 1. 2. 3. 4. Source Gatel Gate2

3sk239a

Abstract: Hitachi DSA001650
Contextual Info: 3SK239A GaAs N-Channel Dual Gate MES FET Application UHF RF amplifier Features • Excellent low noise characteristics NF = 1.3 dB typ at f = 900 MHz • Capable of low voltage operation Outline CMPAK–4 2 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain 3SK239A

marking g1s

Contextual Info: 3SK239A G a A s N -C ha n nel Dual Gate M E S F E T Application U H F R F am plifier Features • E xcellent low noise characteristics N F = 1.3 dB typ at f = 900 M H z • C apable o f low voltage operation Table 1 Absolute Maximum Ratings (Ta = 25°C)

MESFET Application

Abstract: 3SK239A
Contextual Info: 3SK239A GaAs N–Channel Dual Gate MESFET Application CMPAK-4 UHF RF amplifier Features 2 • Excellent low noise characteristics NF = 1.3 dB typ at f = 900 MHz • Capable of low voltage operation 3 1 4 1. Source 2. Gate1 3. Gate2 4. Drain Table 1 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 3SK239A GaAs N-Channel Dual Gate MES FET HITACHI Application UHF RF amplifier Features • Excellent low noise characteristics NF = 1.3 dB typ at f = 900 MHz • Capable of low voltage operation Outline CMPAK-4 s ^ÊBÊh 4 1. Source 2. G atel 3. Gate2 4. Drain

Contextual Info: 3SK239A GaAs N-Channel Dual Gate MES FET HITACHI Application UHF RF amplifier Features • Excellent low noise characteristics • Capable of low voltage operation NF = 1.3 dB typ at f = 900 MHz Outline CMPAK-4 4 1. 2. 3. 4. Source Gatel Gate2 Drain 3SK239A

2SK2752

Abstract: 2sk1326 3SK234 2SK431 3SK238 3SK229 3SK197 2SK1479 1535M 2SK190
Contextual Info: SMALL SIGNAL TRANSISTOR •High frequency amplifier Package code Type No. CMPAK 2SC4903 2SC4906 2SC4965 2SC4967 2SC5051 CMPAK-4 2SC4994 2SC4995 2SC5079 2SC5081 MPAK 2SC2619 2SC2620 2SC2732 2SCZ733 2SC2734 2SC2735 2SC2736 2SC2776 2SC3127 2SC3513 2SC3793 2SC3867

varicap diodes

Abstract: BIPOLAR TRANSISTOR dual gate mosfet in vhf amplifier hitachi SAW Filter gsm module with microcontroller p channel mosfet Transistors mosfet p channel Mosfet transistor hitachi Low frequency power transistor vhf fet lna
Contextual Info: AMPS Cellular Phone RF Power Amplifier M odules For PA PF0032 Power Module for AMPS Mobile PF0040 Power Module for AMPS Mobile PF0042 Power Module for EAMPS Mobile PF0045A Power Module for AMPS Handheld PF0065 Power Module for AMPS Handheld PF0065A Power Module for AMPS Handheld

gsm block diagram

Abstract: 3SK191 dual-gate
Contextual Info: P R O D U C T S IN F O C U S High-Frequency Semiconductor Device Developments W PHS ith the rapidly increasing use num ber o f parts and m ake it possible to cessing unit has b e e n im plem ented on a of im plem ent a low -noise am plifier LNA set with im proved sensitivity and an

Transistor 2SA 2SB 2SC 2SD

Abstract: 993 395 pnp npn transistor 2SA 101 TRANSISTOR 2SC 635 transistor 2Sb 474 transistor 2SC458 transistor 2sc2512 transistor 2sk 168 transistor 2SD 1153 3SK228
Contextual Info: Index Bipolar Transistor PNP, High Frequency Use 2SA Type 2SA673 . 81 2SA 673A . 81

hitachi mosfet power amplifier audio application

Abstract: transistor 2sk MESFET Application N Channel Dual Gate MOS FET UHF/VHF TV Tuner hitachi mosfet audio application note uhf tv booster circuit diagram hvm15 varicap UHF/VHF booster circuit diagram booster gsm antenna UHF/VHF TV Tuner HITACHI
Contextual Info: C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications HITACHI DISCRETE DEVICES FOR WIRELESS & TUNER APPLICATIONS C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications PRODUCT LINE-UP BY APPLICATION: • UHV / VHF Tuners

2SC5146

Abstract: TRANSISTOR 2SA 2SK type Transistor 2SD 2SC2545, 2SC2546 2SC2547 2sb darlington 2sb647 2sd667 2sc458lg 2SC2546 2sb74
Contextual Info: Product Profiles Bipolar PNP Transistor 2SA type Electrical characteristics Test Maximum ratings ^CEO Package SPAK TO-92 Type No, (V) 'c Pc (mA) (W) ^FE Test condition V_ condition vΠ(V) <c (mA) (sat) Cob 'C (mA) (mA) (pF) *T (MHz) Others 200 - (V) 2SA1337