2SB74 Search Results

2SB747

Abstract: 2SD812
Contextual Info: Power Transistors 2SD812 2SD812 Silicon NPN Triple-Diffused Planar Type • High Pow er A m plifier C om plem entary Pair with 2SB747 Package D im ensions ■ Features • W ide a re a of s a fe ty o p e ra tio n ASO • G ood lin e a rity of D C c u r re n t gain

2SB747

Abstract: 2SD812
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB747 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= -80V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SD812 APPLICATIONS ·High power amplifier applications.

2SD794

Abstract: 2SB744 2SB744A 2SD794A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD794/794A TRANSISTOR NPN TO- 126C FEATURES z z High voltage and Large current capacity Complementary to 2SB744,2SB744A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

761b nec

Abstract: 2SB1010 2sb1041 761a 2sa684 nec 2SB737 2SB927 2SA684 2SB686 761-B
Contextual Info: 51 - m % * Type No. 2SB 733 2SB 734 „ « Manuf. = £ SANYO M. 32 TOSHIBA m NEC ÍL HITACHI B M 2SB927 2SB739 1 2SA1705 2SB740 « ± a FUJITSU te T MATSUSHITA h m MITSUBISHI □ — A ROHM 2SB101Q 2SA684 2SB1035 2SB1041 2SB 736 m 2SA1338 2SB 736A H 2SA1338

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD794/794A TRANSISTOR NPN TO-126C FEATURES z z High voltage and Large current capacity Complementary to 2SB744,2SB744A 1. EMITTER 123 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SB0745

Abstract: 2SB0745A 2SB745 2SB745A
Contextual Info: Transistors 2SB0745, 2SB0745A 2SB745, 2SB745A Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Unit: mm 2.5±0.1 2SB0745A Collector-emitter voltage 2SB0745 (Base open) 2SB0745A Emitter-base voltage (Collector open) Collector current

2SB744

Abstract: 2sb74 IC-012
Contextual Info: MCC 2SB744
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Capable of 10Watts of Power Dissipation. Collector-current 3.0A Collector-base Voltage 70V O Operating and storage junction temperature range: -55 C to

2SD789ETZ-E

Abstract: 2SD789 2SD789DTZ-E 2SD789D 2SD789E 2SB740 2SD789CTZ-E PRSS0003DC-A
Contextual Info: 2SD789 Silicon NPN Epitaxial REJ03G0772-0300 Previous ADE-208-1140A Rev.3.00 Aug.10.2005 Application • Low frequency power amplifier • Complementary pair with 2SB740 Outline RENESAS Package code: PRSS0003DC-A (Package name: TO-92 Mod) 1. Emitter 2. Collector

2sb740

Contextual Info: 2SB740 2SB740 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 0.9 W (Tamb=25℃) 3. BASE Collector current ICM: -1 A Collector-base voltage -70 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ 123

Contextual Info: Transistors 2SB0745, 2SB0745A 2SB745, 2SB745A Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Complementary to 2SD0661 (2SD661) and 2SD0661A (2SD661A) Parameter Symbol Collector to 2SB0745 base voltage 2SB0745A Collector to

2SB747

Abstract: 2SD812
Contextual Info: SavantIC Semiconductor Product Specification 2SB747 Silicon PNP Power Transistors DESCRIPTION •With TO-220C package ·Complement to type 2SD812 ·Wide area of safe operation APPLICATIONS ·High power amplifier applications ·Suitable for 15~20W home stereo output

2SD661 TRANSISTOR PNP

Abstract: 2SB745 2SD661 riaa 2SB745A 2SD661A
Contextual Info: Transistor 2SB745, 2SB745A Silicon PNP epitaxial planer type For low-frequency and low-noise amplification Complementary to 2SD661 and 2SD661A 1.0 4.1±0.2 0.4 0.85 Ta=25˚C 4.5±0.1 2.4±0.2 2.0±0.2 3.5±0.1 • Absolute Maximum Ratings 1.0 1.5 R0.9 R0.9

B744 transistor

Abstract: B744 transistor b744
Contextual Info: MCC TM Micro Commercial Components 2SB744
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • Capable of 10Watts of Power Dissipation. Collector-current 3.0A Collector-base Voltage 70V

2SD794

Abstract: 2SD794A
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD794 2SD794A DESCRIPTION •With TO-126 package ·Complement to type 2SB744/744A ·High current 3A ·Excellent hFE linearity APPLICATIONS ·For use in audio frequency amplifier and general purpose applications

2SD794

Abstract: 2SB744 B 15A 45V transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB744 DESCRIPTION •High Collector Current -IC= -3A ·Collector-Emitter Breakdown Voltage: V BR CEO= -45V(Min) ·Complement to Type 2SD794 APPLICATIONS ·Designed for use in audio frequency amplifier.

2SB744

Abstract: 2SB744A
Contextual Info: Inchange Semiconductor Product Specification 2SB744 2SB744A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD794/794A ・Excellent hFE linearity APPLICATIONS ・For audio frequency power amplifier applications PINNING

2SB740

Abstract: TO-92MOD
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SB740 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURE Power dissipation PCM: 2. COLLECTOR 0.9 W (Tamb=25℃) 3. BASE Collector current -1 A ICM: Collector-base voltage

2SB740

Abstract: Hitachi DSA002754
Contextual Info: 2SB740 Silicon PNP Epitaxial Application • Low frequency power amplifier • Complementary pair with 2SD789 Outline 2SB740 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –70 V Collector to emitter voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD794/794A TRANSISTOR NPN TO- 126C FEATURES z z High Voltage and Large Current Capacity Complementary to 2SB744,2SB744A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)

92-0151

Abstract: 2SB744 2SB744 nec 2SD794 TI31 S405A 2SB744A 2SD794A T460 1444A
Contextual Info: NEC NEC NEC C om plem entary Pair T ransistor Series f 2SB744,744A/2SD794,794A PN P/N PN Silicon Epitaxial Transistor Audio Frequency Power Amplifier o m h & 1 ]5 ü w « t /•’; is - o u t f f l r K7>r - r ^ u j a i T- *> »>, o / J^ ífí, Í2 ( R, = 8

2SB740

Abstract: Hitachi DSA0076 2SD789
Contextual Info: 2SB740 Silicon PNP Epitaxial ADE-208-1032 Z 1st. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SD789 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SB740 Absolute Maximum Ratings (Ta = 25°C) Item Symbol

2SB0745

Abstract: 2SB0745A 2SB745 2SB745A
Contextual Info: Transistors 2SB0745, 2SB0745A 2SB745, 2SB745A Silicon PNP epitaxial planar type For low-frequency and low-noise amplification Unit: mm 2SB0745 (1.0) R 0.9 Symbol Rating Unit VCBO −35 V 2.4±0.2 (0.85) 0.45±0.05 0.55±0.1 −55 2SB0745A Collector-emitter voltage 2SB0745

Hitachi DSA0076

Abstract: 2SB740 2SD789
Contextual Info: 2SD789 Silicon NPN Epitaxial ADE-208-1140A Z 2nd. Edition Mar. 2001 Application • Low frequency power amplifier • Complementary pair with 2SB740 Outline TO-92MOD 1. Emitter 2. Collector 3. Base 3 2 1 2SD789 Absolute Maximum Ratings (Ta = 25°C) Item

2SB744

Abstract: 2SB744A
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB744 2SB744A DESCRIPTION With TO-126 package •Complement to type 2SD794/794A ·Excellent hFE linearity · APPLICATIONS ·For audio frequency power amplifier and general purpose applications