2SD794 Search Results

2SD794

Abstract: 2SB744 2SB744A 2SD794A
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD794/794A TRANSISTOR NPN TO- 126C FEATURES z z High voltage and Large current capacity Complementary to 2SB744,2SB744A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2sC2335

Abstract: 2sc1009 2SC2534 TOSHIBA 2803 2sc2805 2SC1817A 2sc2555 2SC3151 2SC2895 2sc3153
Contextual Info: m s tt Manuf. T y p e No. ÍSS tc 2SC 2788 2SC 2789 « — « ^ $ S^NYO 2SC3040 2SC2555 2SC3277 2SC2650 X 2 X SE X ^ 2SC3151 2 SC 2794 Ä 2 2SD1682 2SC 2796 - ft 2SC 2790A 2SC 2792 2SC 2793 jf 2SC 2797 TOSHIBA 2SC3153 2SD794A & T MATSUS H I T A h m MITSUBISHI

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD794/794A TRANSISTOR NPN TO-126C FEATURES z z High voltage and Large current capacity Complementary to 2SB744,2SB744A 1. EMITTER 123 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

2SD794

Abstract: 2SD794A
Contextual Info: SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD794 2SD794A DESCRIPTION •With TO-126 package ·Complement to type 2SB744/744A ·High current 3A ·Excellent hFE linearity APPLICATIONS ·For use in audio frequency amplifier and general purpose applications

2SD794

Abstract: 2SB744 B 15A 45V transistor
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SB744 DESCRIPTION •High Collector Current -IC= -3A ·Collector-Emitter Breakdown Voltage: V BR CEO= -45V(Min) ·Complement to Type 2SD794 APPLICATIONS ·Designed for use in audio frequency amplifier.

2SB744

Abstract: 2SB744A
Contextual Info: Inchange Semiconductor Product Specification 2SB744 2SB744A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD794/794A ・Excellent hFE linearity APPLICATIONS ・For audio frequency power amplifier applications PINNING

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD794/794A TRANSISTOR NPN TO- 126C FEATURES z z High Voltage and Large Current Capacity Complementary to 2SB744,2SB744A 1. EMITTER 2. COLLECTOR MAXIMUM RATINGS (Ta=25 ℃ unless otherwise noted)

92-0151

Abstract: 2SB744 2SB744 nec 2SD794 TI31 S405A 2SB744A 2SD794A T460 1444A
Contextual Info: NEC NEC NEC C om plem entary Pair T ransistor Series f 2SB744,744A/2SD794,794A PN P/N PN Silicon Epitaxial Transistor Audio Frequency Power Amplifier o m h & 1 ]5 ü w « t /•’; is - o u t f f l r K7>r - r ^ u j a i T- *> »>, o / J^ ífí, Í2 ( R, = 8

2SB744

Abstract: 2SB744A
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Power Transistors 2SB744 2SB744A DESCRIPTION With TO-126 package •Complement to type 2SD794/794A ·Excellent hFE linearity · APPLICATIONS ·For audio frequency power amplifier and general purpose applications

2SD794

Abstract: 2SD794A
Contextual Info: Inchange Semiconductor Product Specification 2SD794 2SD794A Silicon NPN Power Transistors • DESCRIPTION ·With TO-126 package ·Complement to type 2SB744/744A ·High current 3A ·Excellent hFE linearity APPLICATIONS ·For use in audio frequency amplifier

2SB744

Abstract: 2SB744A 2sd794
Contextual Info: JMnic Product Specification 2SB744 2SB744A Silicon PNP Power Transistors ・ DESCRIPTION ・With TO-126 package ・Complement to type 2SD794/794A ・Excellent hFE linearity APPLICATIONS ・For audio frequency power amplifier applications PINNING PIN DESCRIPTION

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SD794/794A TRANSISTOR NPN TO- 126C FEATURES z z High voltage and Large current capacity Complementary to 2SB744,2SB744A 1. BASE 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

transistor 4040

Abstract: 2sd794 3400 transistor 2sd794 transistor transistor 2sd794 ic 4040
Contextual Info: 2SD794/2SD794A TO-126C Transistor NPN TO-126C 1. EMITTER 2. COLLECTOR 123 3. BASE 4.040 4.240 Features — 10.800 11.200 3.100 3.300 2.700 2.900 High voltage and Large current capacity Complementary to 2SB744,2SB744A — 3.000 1.800 3.400 2.200 7.800 8.200

D794A

Abstract: d794 2SD794A 2SB744 2SB744A 2SD794 2SB744 NEC IC HE 06 R
Contextual Info: NPN SILICON POWER TRANSISTORS 2SD794,2SD794A D E S C R IP TIO N The 2S D 794, 2S D 794A is an NPN general purpose transistor PAC KAG E D IM E N S IO N S designed for use in Audio frequency amplifier. in millimeters inches FE A T U R E S 8.5 MAX. (0.334 MAX.)

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

nec 2sc3157

Abstract: 2SD999 2SD1296 2SD1317 2SD1406 2sc3694 2SC3760 2SD2061 2sd2239 nec 1678
Contextual Info: - 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SD 2SO 2SD 2SD 1669 y 1673 1676 — ' 1677 1678 1680 1682 ^ 1683 " 1684 •* 1685 1686 □ — A = * = = n n M. 2 TOSHIBA B m NEC ±L HITACHI 2SD1622 2SC2883 2SD1406 2SC3299 2SD1412 2SD1435K 2SD136S 2SD1662 fó T -E m 2SC3419

2SD737

Abstract: 2SD744 2sb737 equivalent 2SD712 2SD736A 2SD778 2SD717 2SB699 2sd730 2SB737
Contextual Info: Absolutes maximum ratings Ta=25ºC PartNumber VCBO VEBO Ic (V) (V) Pc (mA) (mW) Electrical characteristics (Ta=25ºC) DC Current Gain fab/ft* Cob hFE VCE Ic (ºC) (MHz) (pF) (V) (mA) Tj ºñ°í 2SD701 2SD702 400 5 40A 2SD703 200 5 30A 2SD704 50 7 5A 2SD705

2SD157

Abstract: 2SD2238 2SC3692 2SD1833 2SD1277 2SD1577 2sd1590 2SC1847 2SC3258 2SD2239
Contextual Info: - 2 40 - tt m % Type No. 2SD 1410 / M 2SD 1411 M ¥ 2SD 1412 2SD 1413*— 2SD 1414 ^ 2SD 1415 ^ Manuf. 2SD 1420 2SD 1421 2SD 1423A 2SD 1424 s m NEC S ±L HITACHI 2SD1141 K H dr ìli FU JITSU fâ T MATSUSHITA 2SD1833 2SC3692 2SD1271 2SD1833 2SC3144 2SD1589

2SC3558

Abstract: 2SD1431 2SD1209 2SD2061 2SC2021 2SD1407 2sd 1507 2SD1488 k 1487 2SD2532
Contextual Info: - 242 - % it Type No. 2SD 1477 2SD 1478 ^ 2SD 1479 4 2SD 1480 *• 2SD 1481 2SD 1482 2SD 1483 ¿ r 2SD 1484 r 2SD 1485 ^ 2SD I486 2SD 1487 f 2S0 1488 * 2SD 1489 2SD 14902SD 1491 , 2SD 1492 2SD 1493 2SD 1494 ^ 2SD 1495 2SD 1496 " 2SD 1497 ' 2SD 2SD 2SD 2SD

nec 2501

Abstract: nec 2502 NEC 2505 NEC 2504 NEC 2506 2482 H 2SC1555 nec 2508 2SC3660 2SC2534
Contextual Info: - m € Type No. tt « Manuf. 2SC 2473 B 2SC 2474 B 2SC 2475 B 2SC 2476 a m h SANYO 3S S TOSHIBA 2SC2753 ¡L m m h NEC B u HITACHI 2SC2Q26 * ± a FU JIT S U fâ T MATSUSHITA B te T 2SC4269 2SC3121 2SC2755 2SC4229 2SC 2451 - M 2 2SC3902 2SC362Í 2SC269ÛA

2SC 1207

Abstract: 2SC1741A 2SC2274 2SC2926 2SC1214 toshiba 2sc1384 2SC1253 2sc1959 2SC1906 2SC1687
Contextual Info: - 108 - m % 2SC 1185 a n 2SC 1188 a SANYO a 2SC 1187 2SC 1189 M £ Manuf. Type No. £ TOSHIBA B « NEC ±L HITACHI Ä ± FUJITSU Ä & T MATSUSHITA = m MITSUBISHI □ — A ROHM 2SC792 2SC2999 2SC2215 2SC1906 m 2SC2216 2SCÌ906 2SC1687 2SC2926 c 2SC2216 2SC1906

2S0880

Abstract: 2SD427 SD 338 2Sd428 2sc790 2sd880 2SD313 2SD2023 2SC2320 2SC1815
Contextual Info: - 212 - M € T ype No. *t 2S0 330 ' = $ * 2SD 331 ✓ = m * 2SD 334 ✓ te T * 2SD 335 ^ m * 2SD 336 m ¿ni * 2SD 338 * 2SD 339 ^ * * * 2S0 340 * - 2SD 341 2SD 342 SANYO 3C 2 TOSHIBA 2SD313 2SC79Û L B € Manuf. 2SC790 NEC 2SD795 Ä HITACHI 3 ± F U JIT S U

2SB737

Abstract: 2SD786 EL 14v 4c 2SD758B 2SB733 2SD756 2SD758 2SD772 2SD786S 2sd797
Contextual Info: - 224 - Ta=25'C, *EP(iTc=25‘ C m £ tt & m ä VCBO Vc e o (V) (V) n lc(DC) Pc Pc* Ic b o (A) <W) (W) (Uh) Vro (V) n & 14 hF E (min) (roax) (Ta=25‘ C) Ir/Ir (Aj“ Vp f (V) [*E P (ity p fif] (max) '(V )' Ic CA) Ib (A) 2SD743 H i LF PA/LS PSW 100 80 4

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.