2SC2216 Search Results

2SC2216 Datasheets (18)

Filter by Manufacturer

Select Manufacturer

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SC2216	Micro Commercial Components	NPN Silicon Plastic-Encapsulate Transistor	Original	PDF	353.55KB	1
2SC2216	Continental Device India	TO-92 NPN Plastic Package Transistors	Scan	PDF	78.33KB	1
2SC2216	Continental Device India	Semiconductor Device Data Book 1996	Scan	PDF	106KB	1
2SC2216	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF	53.39KB	1
2SC2216	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	79.42KB	1
2SC2216	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	36.82KB	1
2SC2216	Unknown	Cross Reference Datasheet	Scan	PDF	39.26KB	1
2SC2216	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	170.62KB	1
2SC2216	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF	43.91KB	1
2SC2216	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	90.02KB	2
2SC2216	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	32.78KB	1
2SC2216	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	45.23KB	1
2SC2216	Unknown	The Japanese Transistor Manual 1981	Scan	PDF	111.69KB	2
2SC2216	Toshiba	Si NPN LP HF BJT	Scan	PDF	182.83KB	4

2SC2216	Toshiba	TRANSISTOR (TV FINAL PICTURE IF AMPLIFIER APPLICATIONS)	Scan	PDF	177.59KB	3
2SC2216	Toshiba	NPN Transistor	Scan	PDF	182.84KB	4
2SC2216	Toshiba	VHF / UHF Transistors	Scan	PDF	47.57KB	1
2SC2216-AP	Micro Commercial Components	TRANSISTOR TO-92 MOD	Original	PDF	165.27KB

2SC2216 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2SC2216 Abstract: 2SC2717 Contextual Info: T O S H IB A 2SC2216,2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 U nit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. . High Gain : Gpe = 33dB Typ. (f=45M Hz) • Good Linearity of hpE- SYMBOL CHARACTERISTIC Collector-Base Voltage	OCR Scan	2sc2216 2sc2717 45mhz sc-43	PDF
OK304 Abstract: 2sc2216 Contextual Info: 2SC2216,2SC2717 T O S H IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 Unit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. 5.XMAX. High Gain : Gpe = 33dB Typ. (f=45MHz) Good Linearity of hEE. F a X ol ^ 0.45 o MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2sc2216 2sc2717 45mhz sc-43 +1ok304	PDF
2SC2216 Abstract: 2sc221 Contextual Info: 2SC2216 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  Amplifier dissipation NPN Silicon G H Base Emitter Collector J A D A B	Original	2sc2216 17-feb-2011 30mhz 2sc221	PDF
2SC 1207 Abstract: 2SC1741A 2SC2274 2SC2926 2SC1214 toshiba 2sc1384 2SC1253 2sc1959 2SC1906 2SC1687 Contextual Info: - 108 - m % 2SC 1185 a n 2SC 1188 a SANYO a 2SC 1187 2SC 1189 M £ Manuf. Type No. £ TOSHIBA B « NEC ±L HITACHI Ä ± FUJITSU Ä & T MATSUSHITA = m MITSUBISHI □ — A ROHM 2SC792 2SC2999 2SC2215 2SC1906 m 2SC2216 2SCÌ906 2SC1687 2SC2926 c 2SC2216 2SC1906	OCR Scan	2sc1185 2sc1187 2sc1188 2sc1189 +162sc1190 2sc1192 2sc1193 2sc1196 2sc792 2sc2999 2sc 1207 2sc1741a 2sc2274 2sc2926 2sc1214 toshiba 2sc1384 2sc1253 2sc1959 2sc1906 2sc1687	PDF
2SC2216 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2216 TRANSISTOR NPN TO—92 FEATURES Power dissipation PCM: 300 mW (Tamb=25℃) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temperature range	Original	2sc2216 o--92	PDF
Contextual Info: MCC TM Micro Commercial Components 2SC2216 omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features Capable of 300m Watts of Power Dissipation. Collector-current : ICM=50mA Collector-base Voltage:V BR CBO= 50V	Original	2sc2216 -55oc	PDF
2SC2216 Contextual Info: 2SC2216 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • Capable of 300mWatts of Power Dissipation. Collector-current 50mA Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC	Original	2sc2216 300mwatts -55oc 100uadc +350vdc 15madc 100mhz	PDF
transistor F45 Contextual Info: FORWARD INTERNATIONAL ELECTRONICS LTD. 2SC2216 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR TV FINAL PICTURE IF AMPLIFIER APPLICATIONS Package: TO-92 * High Gain:Gpe=33dB TYP. (f=45 MHz) * Good Linearity of HFE ABSOLUTE MAXIMUM RATINGS at Tamb=250C	Original	2sc2216 100ua 30mhz 45mhz +1transistor f45	PDF
2SC2216 Abstract: IB15 Contextual Info: 2SC2216 2SC2216 TRANSISTOR NPN TO—92 FEATURES Power dissipation PCM: 300 mW (Tamb=25℃) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temperature range 1. BASE 2. EMITTER 3. COLLECTOR TJ, Tstg: -55℃ to +150℃	Original	2sc2216 o--92 ib15	PDF
2sc2717 Abstract: 2sc2216 Contextual Info: TOSHIBA 2SC2216,2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216f 2SC2717 Unit in mm TV FINAL PICTURE IF AM PLIFIER APPLICATIONS. High Gain : Gpe = 33dB Typ. (f=45MHz) Good Linearity of hpE. M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC	OCR Scan	2sc2216 2sc2717 2sc2216f 45mhz +1sc-43	PDF
transistor 2sc2216 Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC2216 Features • • • • • • • Capable of 300m Watts of Power Dissipation. Collector-current : ICM=50mA	Original	2sc2216 -55oc 10madc 100uadc +1transistor 2sc2216	PDF
2SC2216 Abstract: transistor u transistor 2717 Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR 2SC2216/2717 U nit in mm T V F IN A L PICTURE IF A M P LIF IE R A P P LIC A T IO N S . ELECTRICAL CHARACTERISTICS Ta = 25°C CHARACTERISTIC 2SC2216 Collector Cut-off C urrent 2SC2717 Em itter Cut-off C urrent	OCR Scan	2sc2216/2717 2sc2216 2sc2717 transistor u +1transistor 2717	PDF
Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC2216 Features • • • • Capable of 300m Watts of Power Dissipation. Collector-current : ICM=50mA	Original	2sc2216 -55oc 10madc 100uadc	PDF
2SC2216 Abstract: 2SC2717 Contextual Info: 2SC2216,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216,2SC2717 TV Final Picture IF Amplifier Applications • High gain: Gpe = 33dB typ. (f = 45 MHz) · Good linearity of hFE. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage	Original	2sc2216 2sc2717 sc-43	PDF

Transistor C2216 Abstract: C2216 C2216 transistor Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC2216 Features • • • • Capable of 300mWatts of Power Dissipation. Collector-current 50mA Collector-base Voltage 50V	Original	2sc2216 300mwatts -55oc c2216 +510madc 100uadc 50vdc transistor c2216 c2216 transistor	PDF
Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC2216 Features • • • • Capable of 300m Watts of Power Dissipation. Collector-current : ICM=50mA	Original	2sc2216 -55oc 10madc 100uadc +150vdc	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2216 TRANSISTOR（ NPN ） TO— 92 FEATURES Power dissipation PCM: 300m W（Tamb=25℃） Collector current ICM: 50m A Collector-base voltage	Original	2sc2216 270typ 050typ	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2216 TRANSISTOR NPN TO-92 FEATURES Amplifier Dissipation NPN Silicon 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. EMITTER Symbol Parameter Value Units	Original	2sc2216 30mhz	PDF
2216 Abstract: 2SC2216 2SC2717 Contextual Info: TOSHIBA 2SC2216.2SC2717 2SC2216, 2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS • • . 5.1 MAX. High Gain : Gpe = 33dB Typ. (f = 45 MHz) Good Linearity of hjpg. .n . 0.55 MAX. M AXIM UM RATINGS (Ta = 25°C)	OCR Scan	2sc2216 2sc2717 sc-43 2216	PDF
Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC2216 Features • • • • • • • Capable of 300m Watts of Power Dissipation. Collector-current : ICM=50mA	Original	2sc2216 -55oc	PDF
2sc2216 Contextual Info: 2SC2216 NPN TO-92 Bipolar Transistors TO-92 1. BASE 2. EMITTER 3. COLLECTOR Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage	Original	2sc2216 30mhz	PDF
2SC2216 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2216 TRANSISTOR NPN FEATURES Amplifier dissipation NPN Silicon TO-92 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	2sc2216 30mhz	PDF
DC 0509 C Abstract: transistor 2sc2216 2SC2216 Contextual Info: 2SC2216,2SC2717 TO SHIBA 2SC2216, 2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV FINAL PICTURE IF AM PLIFIER APPLICATIONS. &1M AX. High Gain : Gpe = 33dB Typ. (f=45MHz) Good Linearity of hjrE. • M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2sc2216 2sc2717 45mhz dc 0509 c +1transistor 2sc2216	PDF
Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2SC2216 Features • • • • Capable of 300m Watts of Power Dissipation. Collector-current : ICM=50mA	Original	2sc2216 -55oc 10madc 100uadc	PDF

2SC2216 Search Results

2SC2216 Datasheets (18)

2SC2216 Datasheets Context Search

2SC2216

OK304

2SC2216

2SC 1207

2SC2216

2SC2216

transistor F45

2SC2216

2sc2717

transistor 2sc2216

2SC2216

2SC2216

Transistor C2216

2216

2sc2216

2SC2216

DC 0509 C