2SC221 Search Results

2SC2216

Abstract: 2SC2717
Contextual Info: T O S H IB A 2SC2216,2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 U nit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. . High Gain : Gpe = 33dB Typ. (f=45M Hz) • Good Linearity of hpE- SYMBOL CHARACTERISTIC Collector-Base Voltage

OK304

Abstract: 2sc2216
Contextual Info: 2SC2216,2SC2717 T O S H IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 Unit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. 5.XMAX. High Gain : Gpe = 33dB Typ. (f=45MHz) Good Linearity of hEE. F a X ol ^ 0.45 o MAXIMUM RATINGS (Ta = 25°C)

2SC2216

Abstract: 2sc221
Contextual Info: 2SC2216 0.05 A , 50 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES  Amplifier dissipation NPN Silicon G H Base Emitter Collector J A D A B

2SC 1207

Abstract: 2SC1741A 2SC2274 2SC2926 2SC1214 toshiba 2sc1384 2SC1253 2sc1959 2SC1906 2SC1687
Contextual Info: - 108 - m % 2SC 1185 a n 2SC 1188 a SANYO a 2SC 1187 2SC 1189 M £ Manuf. Type No. £ TOSHIBA B « NEC ±L HITACHI Ä ± FUJITSU Ä & T MATSUSHITA = m MITSUBISHI □ — A ROHM 2SC792 2SC2999 2SC2215 2SC1906 m 2SC2216 2SCÌ906 2SC1687 2SC2926 c 2SC2216 2SC1906

2SC2216

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2216 TRANSISTOR NPN TO—92 FEATURES Power dissipation PCM: 300 mW (Tamb=25℃) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temperature range

Contextual Info: MCC TM Micro Commercial Components 2SC2216
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features Capable of 300m Watts of Power Dissipation. Collector-current : ICM=50mA Collector-base Voltage:V BR CBO= 50V

2SC2216

Contextual Info: 2SC2216 Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 Features • • • • Capable of 300mWatts of Power Dissipation. Collector-current 50mA Collector-base Voltage 50V Operating and storage junction temperature range: -55OC to +150 OC

transistor F45

Contextual Info: FORWARD INTERNATIONAL ELECTRONICS LTD. 2SC2216 SEMICONDUCTOR TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR TV FINAL PICTURE IF AMPLIFIER APPLICATIONS Package: TO-92 * High Gain:Gpe=33dB TYP. (f=45 MHz) * Good Linearity of HFE ABSOLUTE MAXIMUM RATINGS at Tamb=250C

2SC2216

Abstract: IB15
Contextual Info: 2SC2216 2SC2216 TRANSISTOR NPN TO—92 FEATURES Power dissipation PCM: 300 mW (Tamb=25℃) Collector current 50 mA ICM: Collector-base voltage 50 V V(BR)CBO : Operating and storage junction temperature range 1. BASE 2. EMITTER 3. COLLECTOR TJ, Tstg: -55℃ to +150℃

2sc2717

Abstract: 2sc2216
Contextual Info: TOSHIBA 2SC2216,2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216f 2SC2717 Unit in mm TV FINAL PICTURE IF AM PLIFIER APPLICATIONS. High Gain : Gpe = 33dB Typ. (f=45MHz) Good Linearity of hpE. M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC

transistor 2sc2216

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2216 Features • • • • • • • Capable of 300m Watts of Power Dissipation. Collector-current : ICM=50mA

2SC2216

Abstract: transistor u transistor 2717
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR 2SC2216/2717 U nit in mm T V F IN A L PICTURE IF A M P LIF IE R A P P LIC A T IO N S . ELECTRICAL CHARACTERISTICS Ta = 25°C CHARACTERISTIC 2SC2216 Collector Cut-off C urrent 2SC2717 Em itter Cut-off C urrent

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2216 Features • • • • Capable of 300m Watts of Power Dissipation. Collector-current : ICM=50mA

2SC2216

Abstract: 2SC2717
Contextual Info: 2SC2216,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216,2SC2717 TV Final Picture IF Amplifier Applications • High gain: Gpe = 33dB typ. (f = 45 MHz) · Good linearity of hFE. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage

Transistor C2216

Abstract: C2216 C2216 transistor
Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2216 Features • • • • Capable of 300mWatts of Power Dissipation. Collector-current 50mA Collector-base Voltage 50V

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2216 Features • • • • Capable of 300m Watts of Power Dissipation. Collector-current : ICM=50mA

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2216 TRANSISTOR（ NPN ） TO— 92 FEATURES Power dissipation PCM: 300m W（Tamb=25℃） Collector current ICM: 50m A Collector-base voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2216 TRANSISTOR NPN TO-92 FEATURES Amplifier Dissipation NPN Silicon 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2. EMITTER Symbol Parameter Value Units

2SC2210

Abstract: 374F
Contextual Info: 1SE DI 7Ti7D7t. □□□4150" T SANYO SEM ICO NDUCTOR CORP 2SC2210 2003A NPN Epitaxial Planar Silicon Transistor AM R F Am p, Converter Applications 374F Features . Highly resistant to dielectric breakdown and suited for car use. . Good spurious characteristic due to low f<j>.

2216

Abstract: 2SC2216 2SC2717
Contextual Info: TOSHIBA 2SC2216.2SC2717 2SC2216, 2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS • • . 5.1 MAX. High Gain : Gpe = 33dB Typ. (f = 45 MHz) Good Linearity of hjpg. .n . 0.55 MAX. M AXIM UM RATINGS (Ta = 25°C)

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC2216 Features • • • • • • • Capable of 300m Watts of Power Dissipation. Collector-current : ICM=50mA

2sc2216

Contextual Info: 2SC2216 NPN TO-92 Bipolar Transistors TO-92 1. BASE 2. EMITTER 3. COLLECTOR Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 50 V VCEO Collector-Emitter Voltage

Contextual Info: 1SE DI 7Ti7D7t. □□□4150" T SANYO SEM ICO NDUCTOR CORP 2SC2210 2003A NPN Epitaxial Planar Silicon Transistor AM R F Am p, Converter Applications 374F Features . Highly resistant to dielectric breakdown and suited for car use. . Good spurious characteristic due to low f<j>.

2SC2216

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC2216 TRANSISTOR NPN FEATURES Amplifier dissipation NPN Silicon TO-92 1. BASE MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage