2SC2717 Search Results

2SC2216

Abstract: 2SC2717
Contextual Info: T O S H IB A 2SC2216,2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 U nit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. . High Gain : Gpe = 33dB Typ. (f=45M Hz) • Good Linearity of hpE- SYMBOL CHARACTERISTIC Collector-Base Voltage

OK304

Abstract: 2sc2216
Contextual Info: 2SC2216,2SC2717 T O S H IB A TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 Unit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. 5.XMAX. High Gain : Gpe = 33dB Typ. (f=45MHz) Good Linearity of hEE. F a X ol ^ 0.45 o MAXIMUM RATINGS (Ta = 25°C)

2Sc2717

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 2SC2717 Plastic-Encapsulate Transistors TRANSISTOR NPN TO-92 1. BASE FEATURES 2. EMITTER High Gain: Gpe =33 dB ( Typ. ) ( f =45MHZ) Good Linearity of hFE. 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

2sc2717

Abstract: 2sc2216
Contextual Info: TOSHIBA 2SC2216,2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216f 2SC2717 Unit in mm TV FINAL PICTURE IF AM PLIFIER APPLICATIONS. High Gain : Gpe = 33dB Typ. (f=45MHz) Good Linearity of hpE. M A X IM U M RATINGS (Ta = 25°C) SYMBOL CHARACTERISTIC

2SC2216

Abstract: transistor u transistor 2717
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR 2SC2216/2717 U nit in mm T V F IN A L PICTURE IF A M P LIF IE R A P P LIC A T IO N S . ELECTRICAL CHARACTERISTICS Ta = 25°C CHARACTERISTIC 2SC2216 Collector Cut-off C urrent 2SC2717 Em itter Cut-off C urrent

2SA1152

Abstract: 2SC2719 2SC2770 2SC2724 2SA1154 2SC2110 2SC2132 2SC2727 2SC2159 2SC2718
Contextual Info: - 132 - M X Ë f à Ta=25‘C, *£P(ÍTc=25‘C } m % & 2SC2712 2SC2713 2SC2714 2SC2715 2SC2716 2SC2717 2SC2718 2SC2719 2SC2720 2SC2721 2SC2724 2SC2727 2SC2731 2SC2732 2SC2733 2SC2734 2SC2735 2SC2736 2SC2738 2SC2739 2SC2740 2SC2749 2SC2750 2SC2751 2SC2752

2SC2717

Abstract: f-30MHz
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 2SC2717 Plastic-Encapsulate Transistors TRANSISTOR NPN TO-92 FEATURES 1. BASE . High Gain: Gpe =33 dB ( Typ. ) ( f =45MHZ) . Good Linearity of hFE. 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted)

Contextual Info: 2SC2717 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)30 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC)125õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain.

2216

Abstract: 2SC2216 2SC2717
Contextual Info: TOSHIBA 2SC2216.2SC2717 2SC2216, 2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV FINAL PICTURE IF AMPLIFIER APPLICATIONS • • . 5.1 MAX. High Gain : Gpe = 33dB Typ. (f = 45 MHz) Good Linearity of hjpg. .n . 0.55 MAX. M AXIM UM RATINGS (Ta = 25°C)

DC 0509 C

Abstract: transistor 2sc2216 2SC2216
Contextual Info: 2SC2216,2SC2717 TO SHIBA 2SC2216, 2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm TV FINAL PICTURE IF AM PLIFIER APPLICATIONS. &1M AX. High Gain : Gpe = 33dB Typ. (f=45MHz) Good Linearity of hjrE. • M A X IM U M RATINGS (Ta = 25°C)

2SC2216

Abstract: 2SC2717
Contextual Info: TOSHIBA 2SC2216.2SC2717 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2216, 2SC2717 TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. U n i t in m m a iM A X . High Gain : Gpe = 33dB Typ. (f=45MHz) • Good Linearity of hEE. 0.45 F Oì\ X öl ^ O 0.45

2sc2717

Contextual Info: 2SC2717 NPN TO-92 Bipolar Transistors TO-92 1. BASE 2. EMITTER 3. COLLECTOR Features High Gain: Gpe =33 dB ( Typ. ) ( f =45MHZ) Good Linearity of hFE. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

C2482

Abstract: C3468 2SC2663 2Sc3468 2SC3208 c2981 C2787 M 3211 2sc1510 C1573
Contextual Info: - 15 6 - §ä « Type No. a « Manuf. 2SC 3186 •tf-VÍTV 2SC 3187 ✓ tö T 2SC 3189 = 2SC 3190 *' »Hm? nam ? »am ? ita -?«a«? »a«? ttS « T 2SC 3191 2SC 3192 * 2SC 3193 ' 2SC 3194 / ¿ 2SC 3195 2SC 3196 TOSHIBA «am i »am ? 2SC 3199 X S a ts NEC

TA7124P

Contextual Info: TOSHIBA SURFACE ACOUSTIC WAVE FILTER F074ASL • APPLICATION ……………………………… TV-IF FILTER · SYSTEM ………………………………………………… B,G · CARRIER FREQUENCY ………………………… 38.9 MHz ELECTRICAL CHARACTERISTICS

2SC2348

Contextual Info: CO O CO N ro tn o -3 o n n: H CD 3> rS M H ri Type No. Application NPN PNP VCEO V ic (mA)- VcE(sat) MAX. hFE PC O Gpe -CO VCE ic (V) (mA) (mW) fT M IN . ••V (V) ic (mA) (mA) Iß (MHz) VCE (V) ic (mA) Vcc (V) (dB) iE f (mA) (MHz,' X \ o •D -3 O V H F AMP. T V 1st PIF

secos gmbh

Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3

SSP35n03

Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
Contextual Info: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

TA7124P

Abstract: TA7124
Contextual Info: TOSHIBA SURFACE ACOUSTIC WAVE FILTER F074QSL • APPLICATION ……………………………… TV-IF FILTER · SYSTEM …………………………………………………B, G · CARRIER FREQUENCY ………………………… 38.9 MHz ELECTRICAL CHARACTERISTICS

F074LSL

Abstract: TA7124P
Contextual Info: TOSHIBA SURFACE ACOUSTIC WAVE FILTER F074LSL • APPLICATION ……………………………… TV-IF FILTER · SYSTEM ……………………………………………… B, G · CARRIER FREQUENCY ………………………… 38.9 MHz ELECTRICAL CHARACTERISTICS

2SC2216

Abstract: 2SC2717
Contextual Info: 2SC2216,2SC2717 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type 2SC2216,2SC2717 TV Final Picture IF Amplifier Applications • High gain: Gpe = 33dB typ. (f = 45 MHz) · Good linearity of hFE. Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage

2SC2215

Abstract: 2SC2717 2SC3136 2SC2216 2SC2347 2SC2348 2SC2349
Contextual Info: € CD CD & -3 by n X ICminer.com H CD > rh te H Electronic-Library Type no. A p p lic a tio n NPN PNP VCEO ic PC V) (mA)- (mW) VCElsat) MAX. hFE VCE (V) ic (mA) ••V (V) ic (mA) fTMIN.( >B (mA) (MHz) VCE (V) Gpe ic (mA) (dB) Vcc (V) VHF AMP. TV 1st PI F