2SC2715 Search Results

2SC2715 Datasheets (26)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SC2715	Galaxy Semi-Conductor Holdings	Silicon Epitaxial Planar Transistor	Original	PDF	242.3KB	3
2SC2715	Kexin	Silicon NPN Epitaxial	Original	PDF	33.86KB	1
2SC2715	Shenzhen Yongerjia Electronic	NPN Epitaxial Silicon Transistor	Original	PDF	78.48KB	1
2SC2715	Unknown		Scan	PDF	320.16KB	7
2SC2715	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	36.78KB	1
2SC2715	Unknown	High Frequency Device Data Book (Japanese)	Scan	PDF	41.91KB	1
2SC2715	Unknown	The Transistor Manual (Japanese) 1993	Scan	PDF	112.25KB	2
2SC2715	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	141.97KB	1
2SC2715	Unknown	The Japanese Transistor Manual 1981	Scan	PDF	113.6KB	2
2SC2715	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	46.22KB	1
2SC2715	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	76.13KB	1
2SC2715	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	39.43KB	1
2SC2715	Toshiba	Super Mini Package (TO-236 / SOT-23) Transistors	Scan	PDF	61.33KB	1
2SC2715	Toshiba	Silicon NPN transistor for high frequency amplifier applications. Recommended for FM IF, OSC stage and AM conv. IF stage	Scan	PDF	341.69KB	8

2SC2715M	Jiangsu Changjiang Electronics Technology	TRANSISTOR	Original	PDF	127.17KB	3
2SC2715-O	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	76.13KB	1
2SC2715O	Toshiba	Silicon NPN Epitaxial Planar Type Transistor	Scan	PDF	341.68KB	8
2SC2715-O	Toshiba	TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE(PCT PROCESS)	Scan	PDF	333.17KB	7
2SC2715-R	Unknown		Scan	PDF	341.7KB	8
2SC2715-R	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	76.13KB	1

2SC2715 Price and Stock

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Toshiba America Electronic Components


Toshiba America Electronic Components 2SC2715-Y(TE85L,F) 2SC2715-Y(TE85L,F)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical ()	2SC2715-Y(TE85L,F)		15,000		3,192	1 - 10 - 100 - 1000 - 10000 $0.10	Buy Now
	2SC2715-Y(TE85L,F)		9,000		3,192	1 - 10 - 100 - 1000 - 10000 $0.12	Buy Now
Rochester Electronics	2SC2715-Y(TE85L,F)		24,000		1	1 - 10 - 100 $0.11 1000 $0.09 10000 $0.08	Buy Now

2SC2715 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N2458 Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253 Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386	Original	2n1972 2n909 st6600 st6601 +15sa2715 bsx70 2sc562 2n479 2n479a 2n2458 2n2537 texas 2n2551 2n2457 2n2429 sgs-ates c426 2n2425 2n2398 2n2431 bf253	PDF
2SC2715 Abstract: TRANSISTOR MARKING FA Contextual Info: 2SC2715 TO SH IBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2715 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS • • + 0.5 2.5-0.3 + 0.25 High Power Gain : Gpe = 2dB (Typ.) (f=10.7MHz) Recommended for FM IF, OSC Stage and AM CONV. IF Stage.	OCR Scan	2sc2715 sc-59 transistor marking fa	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2715 TRANSISTOR NPN 1. BASE FEATURES 2. EMITTER 3. COLLECTOR z z High Power Gain: Gpe=2dB(Typ.)(f=10.7MHz) Recommended for FM IF,OSC Stage and AM CONV. IF Stage.	Original	ot-23 2sc2715	PDF
oscilator Abstract: 2SC2715 Contextual Info: 2SC2715 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 AM/FM IF AMPLIFIER,LOCAL OSCILATOR 1 OF FM/VHF TUNER High Current Gain Bandwidth 2 Product f T =600MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS o Ta=25 C	Original	2sc2715 ot-23 600mhz 300us +1oscilator	PDF
2SC2715 Contextual Info: ST 2SC2715 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications for FM IF, OSC stage and AM CONV. IF stage The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g	Original	2sc2715	PDF
2SC2715 Contextual Info: 2SC2715 SILICON NPN EPITAXIAL PLANAR TYPE TRANSISTOR U nit in HIGH FREQUENCY AMPLIFIER APPLICATIONS. FEATURES : High Power Gain : Gpe = 2dB Typ. (f= 10.7MHz) • Recommended for FM IF, OSC Stage and AM CONV. IF Stage. CE C IM A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2sc2715 sc-59	PDF
bfw34 diode Abstract: 2SC562 BSX70 LOW-POWER SILICON NPN BFR36 NA31 L/bfw34 diode 2SC941 bfw34 Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386	Original	2n1972 2n909 st6600 st6601 +12sa2715 bsx70 2sc562 2n479 2n479a bfw34 diode low-power silicon npn bfr36 na31 l/bfw34 diode 2sc941 bfw34	PDF
2SC2715 Contextual Info: ST 2SC2715 NPN Silicon Epitaxial Planar Transistor for FM RADIO, MIX, CONV, OSC and IF amplifier . The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. TO-92 Plastic Package Weight approx.0.19g Absolute Maximum Ratings Ta = 25oC	Original	2sc2715	PDF
2SC2715 Abstract: 2SC2715-Y 2SC2715-O 2SC2715-R Contextual Info: 2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type PCT process 2SC2715 High Frequency Amplifier Applications Unit: mm • High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) · Recommended for FM IF, OSC stage and AM CONV. IF stage. Maximum Ratings (Ta = 25°C)	Original	2sc2715 2sc2715-y 2sc2715-o 2sc2715-r	PDF
2SC2715 Contextual Info: Transistors IC SMD Type Silicon NPN Epitaxial 2SC2715 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Recommended for FM IF, OSC stage and AM CONV. IF stage. 1 0.55 High power gain: Gpe = 2dB typ. (f = 10.7 MHz). +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1	Original	2sc2715 ot-23	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B 2SC2715M TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial planar Silicon Transistor B C 1. BASE FEATURES High power gain: Gpe=27dB(f=10.7MHz)	Original	wbfbp-03b 2sc2715m	PDF
2SA1152 Abstract: 2SC2719 2SC2770 2SC2724 2SA1154 2SC2110 2SC2132 2SC2727 2SC2159 2SC2718 Contextual Info: - 132 - M X Ë f à Ta=25‘C, *£P(ÍTc=25‘C } m % & 2SC2712 2SC2713 2SC2714 2SC2715 2SC2716 2SC2717 2SC2718 2SC2719 2SC2720 2SC2721 2SC2724 2SC2727 2SC2731 2SC2732 2SC2733 2SC2734 2SC2735 2SC2736 2SC2738 2SC2739 2SC2740 2SC2749 2SC2750 2SC2751 2SC2752	OCR Scan	2sc2712 2sc2713 2sc2714 2sc2715 +162sc2716 2sc2717 mp-80 2sc2751 2sa1156 o-126 2sa1152 2sc2719 2sc2770 2sc2724 2sa1154 2sc2110 2sc2132 2sc2727 2sc2159 2sc2718	PDF
marking AM sot-23 Abstract: 2SC2715 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2715 TRANSISTOR NPN 1. BASE FEATURES 2. EMITTER 3. COLLECTOR z z High Power Gain Recommended for FM IF,OSC Stage and AM CONV. IF Stage. MAXIMUM RATINGS (TA=25℃ unless otherwise noted)	Original	ot-23 2sc2715 marking am sot-23	PDF
2SC2715 Contextual Info: 2SC2715 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2715 HIGH FREQUENCY AMPLIFIER APPLICATIONS. + 0.5 2 .5 - I1 3 + 0 .2 5 1 .5 - Q .l 5 FEATURES : • High Power Gain : Gpe = 2dB (Typ.) (f = 10.7MHz) • Recommended for FM IF, OSC Stage and AM CONV. IF Stage.	OCR Scan	2sc2715 sc-59	PDF

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2715 TRANSISTOR NPN 1. BASE FEATURES 2. EMITTER 3. COLLECTOR z z High Power Gain Recommended for FM IF,OSC Stage and AM CONV. IF Stage. MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)	Original	ot-23 2sc2715	PDF
marking NF Abstract: 2SC2715-O Contextual Info: 2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type PCT process 2SC2715 High Frequency Amplifier Applications Unit: mm • High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) • Recommended for FM IF, OSC stage and AM CONV. IF stage. Absolute Maximum Ratings (Ta = 25°C)	Original	2sc2715 sc-59 marking nf 2sc2715-o	PDF
2SC2715 Contextual Info: ST 2SC2715 NPN Silicon Epitaxial Planar Transistor for high frequency amplifier applications for FM IF, OSC stage and AM CONV. IF stage The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g	Original	2sc2715	PDF
2SC2715 Contextual Info: ST 2SC2715 NPN Silicon Epitaxial Planar Transistor for FM RADIO, MIX, CONV, OSC and IF amplifier . The transistor is subdivided into three groups, R, O and Y, according to its DC current gain. TO-92 Plastic Package Weight approx.0.19g Absolute Maximum Ratings Ta = 25oC	Original	2sc2715	PDF
2SC2715 Contextual Info: 2SC2715 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2715 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS • • High Power Gain : Gpe = 2dB (Typ.) (f=10.7MHz) Recommended for FM IF, OSC Stage and AM CONV. IF Stage. + 0.5	OCR Scan	2sc2715	PDF
OSCILATOR Abstract: cb sot23-3 2SC2715 Contextual Info: 2SC2715 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 AM/FM IF AMPLIFIER,LOCAL OSCILATOR 1 OF FM/VHF TUNER High Current Gain Bandwidth 2 Product f T =600MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm o ABSOLUTE MAXIMUM RATINGS Ta=25 C	Original	2sc2715 ot-23 600mhz 300us +2oscilator cb sot23-3	PDF
KZL 140 C Abstract: 2SC2715 Contextual Info: 2SC2715 SILICON NPN EPITAXIAL PLANAR TYPE U nit in mm HIGH FREQUENCY AM PLIFIER APPLICATIONS. + Oil Û255 1.5— FEATURES: High Power Gain : Gpe = 2dB Typ. (f = 10.7MHz) • Recommended for FM IF, OSC Stage and AM CONV. IF Stage. dd +1 HO EE- -e dci +1 M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2sc2715 kzl 140 c	PDF
2SC2715M Abstract: 30MHZ Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B 2SC2715M TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial planar Silicon Transistor B C 1. BASE FEATURES High power gain: Gpe=27dB(f=10.7MHz)	Original	wbfbp-03b 2sc2715m 30mhz	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B 2SC2715M TRANSISTOR 1.2x1.2×0.5 unit: mm TOP DESCRIPTION NPN Epitaxial planar Silicon Transistor B C 1. BASE FEATURES High power gain: Gpe=27dB(f=10.7MHz)	Original	wbfbp-03b 2sc2715m	PDF
marking NF Contextual Info: 2SC2715 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type PCT process 2SC2715 High Frequency Amplifier Applications Unit: mm • High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) • Recommended for FM IF, OSC stage and AM CONV. IF stage. Absolute Maximum Ratings (Ta = 25°C)	Original	2sc2715 sc-59 marking nf	PDF

2SC2715 Search Results

2SC2715 Datasheets (26)

2SC2715 Price and Stock

Toshiba America Electronic Components 2SC2715-Y(TE85L,F)

2SC2715 Datasheets Context Search

2N2458

2SC2715

oscilator

2SC2715

2SC2715

bfw34 diode

2SC2715

2SC2715

2SC2715

2SA1152

marking AM sot-23

2SC2715

marking NF

2SC2715

2SC2715

2SC2715

OSCILATOR

KZL 140 C

2SC2715M

marking NF