OSCILATOR Search Results

Contextual Info: TOSHIBA TC74HC4060AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC4060AP, TC74HC4060AF 1 4 -S T A G E BINARY COUNTER/ OSCILATOR The TC74HC4060A is a high speed CMOS 14 - STAGE BINARY COUNTER fabricated with silicon gate C2MOS technology.

oscilator

Abstract: 2SC2715
Contextual Info: 2SC2715 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 AM/FM IF AMPLIFIER,LOCAL OSCILATOR 1 OF FM/VHF TUNER High Current Gain Bandwidth 2 Product f T =600MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS o Ta=25 C

2SC3734LT1

Abstract: na 50
Contextual Info: 2SC3734LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 AM/FM IF AMPLIFIER,LOCAL OSCILATOR 1 OF FM/VHF TUNER High Current Gain Bandwidth 2 Product f T =1100MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS o Ta=25 C

2SC1812

Contextual Info: 2SC1812 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 AM/FM IF AMPLIFIER,LOCAL OSCILATOR 1 OF FM/VHF TUNER High Current Gain Bandwidth 2 Product f T =1100MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS o Ta=25 C

dBm150

Contextual Info: PRELIMINARY GaAs MIXER IC • NJG1 5 5 0 F Function Mixer including local Oscilator amplifier Absolute Maximum Rating Supply Voltagel Supply Voltage2 Mixer Input Power Local Input Power Power Dissipation Operating Temperature Storage Temperature Ta=25’C

power supply scr 30 100 20000

Contextual Info: PIEZO TECHNOLOGY INC S'îE D • 7140704 0000253 T « P T E I VOLTAGE CONTROLLED CRYSTAL OSCILATORS T - 50-23 T'SO'Oy M/N X01061C HIGH FREQUENCY XO1045C X01195C X01140C 5 - 80 14 - 16 AND 28-32 20 - 50 10 - 150 12.26 ± 50 ppm 20.48 To be lockable 30 ± 0.2%

Contextual Info: TO SH IB A TC74HC4060AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC4Q6QAP, TC74HC4Q6QAF 14-STAGE BINARY COUNTER/OSCILATOR The TC74HC4060A is a high speed CMOS 14 - STAGE BINARY COUNTER fabricated with silicon gate C2MOS technology.

BFP650

Abstract: BGA420 T-25
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT- Silicon Germanium technology

Contextual Info: IC INFORMATION J 1/1 E GEX-FM903XM/UC BP5250 Function DC / DC Converter Hybrid Type Model CONTROL CIRCUIT TRIANGLE OSCILATOR Fosc = 190kHz OVER CURRENT DETECTION CIRCUIT DRIVE CIRCUIT 7 6 5 4 3 2 1 ADJ VOUT IS GND SW VIN CTL 2001.8

RBS 3000

Abstract: BFP650 BFP650 noise figure BGA420 T-25 RBS INFINEON
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology

Contextual Info: TOSHIBA TC74HC4060AP/AF TO SHIBA CM OS D IG ITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TC74HC4060AP, TC74HC4060AF 1 4 -S T A G E BINARY COUNTER/ OSCILATOR The TC74HC4060A is a high speed CMOS 14 - STAGE BINARY COUNTER fabricated with silicon gate C2MOS technology.

Contextual Info: TC74HC4060AP/AF 14-STAGE B IN A R Y COUNTER/OSCILATOR T he TC74HC4060A is a h ig h speed CMOS 14-STAGE BINARY COUNTER fabricated with silicon gate C 2 MOS technology. I t achieves th e h ig h speed o p e ra tio n s im ila r to eq u ivalent L S T T L w hile m a in ta in in g th e CMOS low

4060B equivalent

Abstract: 4060B RCTR14 TC74HC4060AF TC74HC4060AP 4060b pin configuration diagram
Contextual Info: TOSHIBA TC74HC4060AP/AF TO SH IBA CM OS D IG ITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TC74HC4060AP, TC74HC4060AF 14-STA G E BINARY COUNTER/OSCILATOR The TC74HC4060A is a high speed CMOS 14 - STAGE BINARY COUNTER fabricated with silicon gate C2MOS technology.

oscilator

Abstract: 2SC3734LT1 na 50
Contextual Info: 2SC3734LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 AM/FM IF AMPLIFIER,LOCAL OSCILATOR 1 OF FM/VHF TUNER High Current Gain Bandwidth 2 Product f T =1100MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm o ABSOLUTE MAXIMUM RATINGS Ta=25 C

germanium transistors NPN

Abstract: BFP420F BFP650F GMA marking marking r5s
Contextual Info: BFP650F NPN Silicon Germanium RF Transistor* • For medium power amplifiers and driver stages 3 • High OIP 3 and P-1dB 2 4 1 • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21.5 dB at 1.8 GHz Noise figure F = 0.8 dB at 1.8 GHz • 70 GHz fT - Silicon Germanium technology

transistor 1T

Abstract: BFP650 equivalent
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4
For high power amplifiers
Ideal for low phase noise oscilators
Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz
Gold metallization for high reliability

ocxo 13MHz

Abstract: CFPO-2
Contextual Info: CFPO-2S Ultra Low Phase Noise & High Stability OCXO Outline mm - Package 50 Description 20.3 ▪▪ Ultra low phase noise and high stability Oven Controlled 1 Oscilator (OCXO) manufactured for us by Rakon 20.3 Bottom View Package Outlines ▪▪ 50.8 x 50.8 x 25.4mm (50)

OSCILATOR

Abstract: cb sot23-3 2SC2715
Contextual Info: 2SC2715 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 AM/FM IF AMPLIFIER,LOCAL OSCILATOR 1 OF FM/VHF TUNER High Current Gain Bandwidth 2 Product f T =600MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm o ABSOLUTE MAXIMUM RATINGS Ta=25 C

BFP650 noise figure

Abstract: data sheet germanium diode germanium transistors NPN npn germanium BFP650
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4
For high power amplifiers
Ideal for low phase noise oscilators
Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz
Gold metallization for high reliability

BFP650

Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.9 dB at 1.8 GHz • Gold metallization for high reliability

ci 4060b

Abstract: RCTR14 4060B 4060B equivalent 4060b pin configuration diagram TC74HC4060AF TC74HC4060AP TC74HC40
Contextual Info: TOSHIBA TC74HC4060AP/AF TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC4060AP, TC74HC4060AF 14-STAGE BINARY COUNTER/OSCILATOR The TC74HC4060A is a high speed CMOS 14 - STAGE BINARY COUNTER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent

MMBT9018LT1

Abstract: sat tuner
Contextual Info: MMBT9018LT1 NPN EPITAXIAL SILICON TRANSISTOR SOT-23 3 AM/FM IF AMPLIFIER,LOCAL OSCILATOR 1 OF FM/VHF TUNER High Current Gain Bandwidth 2 Product f T =1100MHz 1. 1.BASE 2.EMITTER 3.COLLECTOR 0.4 0.95 0.95 2.9 1.9 2.4 1.3 Unit:mm ABSOLUTE MAXIMUM RATINGS o Ta=25 C

RBS 3000

Abstract: 1g28
Contextual Info: BFP650 NPN Silicon Germanium RF Transistor* • For high power amplifiers 3 • Ideal for low phase noise oscilators 2 4 • Maxim. available Gain Gma = 21 dB at 1.8 GHz 1 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability • 70 GHz fT - Silicon Germanium technology

PH marking code

Contextual Info: BFP650 NPN Silicon Germanium RF Transistor 3 Preliminary data 4 • For high power amplifiers • Ideal for low phase noise oscilators • Maxim. available Gain Gma = 21 dB at 1.8 GHz 2 Noise figure F = 0.8 dB at 1.8 GHz • Gold metallization for high reliability