2SC380 Search Results

Contextual Info: SMD Type Product specification 2SA1483 Features High Transition Frequency: fT = 200MHz typ. Low Collector Output Capacitance: Cob = 3.5pF(typ.) Complementary to 2SC3803 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO

2SC3807C

Contextual Info: 2SC3807C Ordering number : ENA0439 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807C 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Applications • Low-frequency general-purpose amplifiers, drivers.

Contextual Info: T O SH IB A 2SC3803 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3803 HIGH FREQUENCY AMPLIFIER APPLICATIONS Unit in mm VIDEO AMPLIFIER APPLICATIONS HIGH SPEED SWITCHING APPLICATIONS 4.6 M A X . 1 .7 M A X . • • • High Transition Frequency

2SC3603

Abstract: 2SC3809
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SC3809 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE PACKAGE DIMENSIONS in millimeters • The 2SC3809 is an NPN silicon epitaxial dual transistor having a large-gain-bandwidth product performance in a wide operating

2N2458

Abstract: 2N2537 texas 2N2551 2N2457 2N2429 SGS-ATES c426 2N2425 2n2398 2N2431 BF253
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386

2SC3803

Abstract: 2SA1483
Contextual Info: TOSHIBA 2SC3803 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3803 HIGH FREQUENCY AM PLIFIER APPLICATIONS Unit in mm VIDEO AM PLIFIER APPLICATIONS HIGH SPEED SWITCHING APPLICATIONS 1.6 M AX. 4.6 M AX. 1.7MAX. O • • • High Transition Frequency

2SA1483

Abstract: 2SC3803
Contextual Info: TO SH IBA 2SC3803 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3803 HIGH FREQUENCY AMPLIFIER APPLICATIONS Unit in mm VIDEO AMPLIFIER APPLICATIONS 4.6MAX. 1.7MAX. HIGH SPEED SWITCHING APPLICATIONS • • • High Transition Frequency : frp = 200MHz (Typ.)

2SA1483

Abstract: 2SC3803
Contextual Info: TO SH IB A 2SC3803 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3803 HIGH FREQUENCY AM PLIFIER APPLICATIONS Unit in mm VIDEO AM PLIFIER APPLICATIONS HIGH SPEED SWITCHING APPLICATIONS - • 4.6 M A X . 1 .7 M A X . 0.4 ±0.05. i • • •

2SC373

Abstract: 2SC734 2SC1330 2SC923 2SC1000 2SC400 TO-92B 2SC1327 2SC735 2sc539
Contextual Info: Low Level and General Purpose Amplifiers TYPE POLA­ CASE NO. RITY MAXIMUM RATINGS H,'E Ic VcEO mW (mA) (V) min mas VcE (mA) (V) C* N.F. fx max lc mm max mas (V) (mA) (MHz) (MHz) (dB) 2SC316 2SC372 2SC373 2SC380 2SC400 N N N N N TO-18 TO-92B TO-92B TO-92B

2043B

Abstract: 2SC3808 ITR06043 ITR06044 ITR06045 ITR06046 ITR06047
Contextual Info: Ordering number:ENN2015A NPN Epitaxial Planar Silicon Transistor 2SC3808 High hFE, Low-Frequency General-Purpose Amplifier Applications Applications Package Dimensions • Low frequency general-purpose amplifiers, drivers. unit:mm 2043B Features [2SC3808] 8.0

Contextual Info: 2SC3803 TOSHIBA Transistor Silicon NPN Epitaxial Type PCT process 2SC3803 High Frequency Amplifier Applications Video Amplifier Applications Unit: mm High Speed Switching Applications • High transition frequency: fT = 200 MHz (typ.) • Low collector output capacitance: Cob = 3.5 pF (typ.)

Contextual Info: 2SC3802K h 7 > v X 2 / T ransistors it:$ * '> 7 ^ 7 0l'-tff2NPN y'Jn> Epitaxial Planar NPN Silicon Transistor UHF/VHF $ £ • S‘n /U H F /V H F Oscillator • Mixer • • ^ -JfM >± ll/D im e n s io n s U n it: mm) 1) C r e A '''J ^ 'o Cre=0.4pF (Typ.)

2SC3801

Contextual Info: h ~7 > £ /T ra n sisto rs 2SC3801 I t f ^ m w v O O v ^ r V ^ U 7 V - ^ N P N '> U = I> h 7 > y ^ ^ • Epitaxial Planar NPN Silicon Transistor UH F/VH F • > I*£ /U H F/V H F Oscillator • Mixer • 1 C re If ib ? I»'» Cre=0.4pF Typ.) 2) f T ^ S L 'o

2SC4103

Abstract: 2SC3802 smt 4103
Contextual Info: h 7 > v 7 $ /'Transistors 2SC3802K/2SC4103 2SC 3802K 2SC 4103 • I ? * v • » ft 7* U - O 7 5 - i Ju K T f-jfem /D im ensions U nit : mm 1) C re = 0 .4 pF ( Typ.) ¿ /J v $ L '0 2SC3802K 2) fT=1100M H z(Typ.) 2SC4103 1.1 *t'Ì u 3 )C c -rb b ’= 6 p s e c ( T y p .)t/j\^ <

bfw34 diode

Abstract: 2SC562 BSX70 LOW-POWER SILICON NPN BFR36 NA31 L/bfw34 diode 2SC941 bfw34
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 2N1972 2N909 ST6600 ST6601 SA2715 BSX70 2SC562 2SC562 2N479 2N479A BF253 KT215E1 2N2693 KSC2715 2SC2669 2SC2715 2SC380 2S731 2S731 2S731 ~~g~~~~ 25 30 35 40 45 50 2SC941 2SC941 BFR36 BFR36 2N2309 TP4386

a0629

Abstract: 2SC3807MP A0629-1 VEBO-15V IT11926
Contextual Info: 2SC3807MP Ordering number : ENA0629 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SC3807MP 25V / 2A High-hFE, Low Frequency General-Purpose Amplifier Applications Applications • Low-frequency general-purpose amplifiers, drivers.

2SC380

Abstract: transistor 2sc380
Contextual Info: ST 2SC380 NPN Silicon Epitaxial Planar Transistor High frequency amplifier application The transistor is subdivided into three groups, R, O, and Y, according to its DC current gain On special request, these transistors can be manufactured in different pin configurations.

2SA1483

Abstract: 2SC3803
Contextual Info: 2SC3803 シリコンNPNエピタキシャル形 PCT方式 東芝トランジスタ 2SC3803 ○ 高周波増幅用 ○ 映像増幅用 ○ 高速度スイッチング用 単位: mm • トランジション周波数が高い。 : fT = 200 MHz (標準) •

2sc380

Abstract: transistor 2sc380
Contextual Info: ST 2SC380 NPN Silicon Epitaxial Planar Transistor High frequency amplifier application for FM IF, OSC stage and AM CONV. IF stage The transistor is subdivided into three groups R, O, and Y, according to its DC current gain. TO-92 Plastic Package Weight approx. 0.19g

2SA1483

Abstract: 2SC3803
Contextual Info: Transistors SMD Type High Frequency Amplifier Applications 2SA1483 Features High Transition Frequency: fT = 200MHz typ. Low Collector Output Capacitance: Cob = 3.5pF(typ.) Complementary to 2SC3803 Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit

Contextual Info: 2SC3804 Transistors Bipolar NPN UHF/Microwave Transisitor Military/High-RelN V BR CEO (V)17 V(BR)CBO (V)35 I(C) Max. (A)12 Absolute Max. Power Diss. (W)100# Minimum Operating Temp (øC) Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0m @V(CBO) (V) (Test Condition)15

2SC1815 NPN SOT-23

Abstract: ss8050 sot-23 S8050 npn BC337 2N2907 SOT-23 s9018 to-92 S9014 SOT-23 2SC1008 noise S9014 To39 BC212C
Contextual Info: MCC Small Signal Transistors Small Signal General Purpose Transistors Part No. and Polarity NPN PNP 2N3416 2N3904 2N3906 2N4400 2N4402 2N4401 2N4403 2N5172 2N6727 2SA562 2SA673 2SA673A 2SA733 2SA844 2SA950 2SA1015 2SA1300 2SB892 2SC380TM 2SC945 2SC1008 2SC1213

2sc3807

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 2SC3807 TRANSISTOR NPN TO – 126C FEATURES z Large Current Capacity z High DC Current Gain z Low Collector-Emitter Saturation Voltage 1. EMITTER 2. COLLECTOR 3. BASE

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors 2SC380TM TRANSISTOR NPN TO-92 FEATURE Power dissipation PCM: 0.3 1. EMITTER W (Tamb=25℃) 2. COLLECTOR Collector current 0.05 A ICM: Collector-base voltage 35 V V(BR)CBO: